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Questions tagged [nmos]

A n-channel metal-oxide semiconductor (nMOS) transistor has n-type carriers in the channel. A positive voltage on the gate turns inverts the substrate (PWell) creating the channel and turning the device on. The term may also be used to describe logic circuits built around nMOS transistors.

76 questions with no upvoted or accepted answers
3 votes
1 answer
82 views

Transient Negative voltage on NMOS causing channel to open?

This is my first post here. I am an electrical engineer looking to cure my madness because a 2N7002 NMOS is doing things I cannot explain. If you look into the attachments, you will see some screen ...
jdavis's user avatar
  • 31
3 votes
0 answers
56 views

Which parameters should be compared to to replace N-MOSFETS with different package but with same pin functionality?

Since NTZD3154N is used a lot in my design, and I have BSS138PS only for used for one circuit, I want to replace BSS138PS with NTZD3154N in the following DP++ Auxiliary Conversion Block: Note: This ...
Firas Abd El Gani's user avatar
2 votes
0 answers
104 views

ADS simulation error when inputting a clock in to a D flip-flop through an NMOS switch

A NMOS gate controls when the clock signal is fed into the clock of the D flip-flop. Below is the NMOS gate schematic and simulation. As we can see, the Vsquare only goes through the NMOS when the ...
kintaro's user avatar
  • 347
2 votes
1 answer
134 views

MOSFET diffusion to substrate capacitance

in order to eliminate body effect one way is to connect the substrate to source when the well is for a single device (PMOS with a well in a CMOS for example) , but i read that it increases the source ...
Ahmed G Diab's user avatar
2 votes
0 answers
10k views

MOSFET Parameters LTSpice

This is the LTSpice model of the Fairchild 2N7002 NMOS transistor. ...
user246185's user avatar
1 vote
0 answers
25 views

A simple NMOS circuit simulation. Is there a way I can use KCL to find Id instead of doing Id equation?

I know the traditional way to solve this, you find Vgs then you try to find Id. But for this circuit, we already can figure out the current flowing through the 2K and 3K by doing KVL(assuming I1). Is ...
Pococurante Bird's user avatar
1 vote
1 answer
27 views

is Vov of a nMos always VGS - Vt?

Looking at this graph from Analog Circuit Design Discrete and Integrated by Sergio Franco, is it always true that Vov = VGS - Vt? or is this only true at pinchoff point?
user364328's user avatar
1 vote
0 answers
114 views

Is there a common N channel MOSFET with Pin1: Gate, Pin2: Drain and Pin3: Source?

I have designed a circuit in which I have used a BSS138 N channel MOSFET as a switch to turn on a 12V 50mA load from a GPIO. During the schematic design in KiCad, I have chosen the wrong symbol. These ...
WhiteShark's user avatar
1 vote
0 answers
89 views

Electric-lock control via NMOS matrix

Currently I am working on the design that allows to control 8x8 electric lock matrix via PIC16F877A. As in comments for somebody it was not obvious (btw it was mentioned) I am using 64 electric locks ...
Alioth's user avatar
  • 13
1 vote
2 answers
81 views

MOSFET not saturating when Vds > Vgs - Vth

According to Wikipedia, the drain current (\$I_d\$) should stay relatively constant when \$V_{ds} > V_{gs} - V_{th}\$: (By User:CyrilB - File:IvsV_mosfet.png, CC BY-SA 3.0, https://commons....
glibg10b's user avatar
  • 217
1 vote
1 answer
83 views

NMOS is high when gate is low

I’m trying to simulate DRAM with N-MOSFETs with row and column selecting logic. When I select my column, which is connected to the source of an N-MOSFET, the N-MOSFETs in that column all turn on, even ...
Sss's user avatar
  • 11
1 vote
0 answers
46 views

What is different in the manufacturing of differently rated MOSFETs?

The IRF540N is one of the MOSFETs I'm using, and the IRF510N. Both look exactly the same from the outside because they use the same packaging, but they are rated for different power levels. For ...
Rayyan Khan's user avatar
1 vote
0 answers
54 views

How can I find \$\small V_{GS}\$ in this question?

My attempt: DC ANALYSIS Using voltage divider: $$V_{G0}=\frac{200\ \mathrm{k\Omega}}{300\ \mathrm{k\Omega}} \cdot 3\ \mathrm{V} = 2\ \mathrm{V}$$ By KCL $$I_{D0}=I_{D1}=I_{B}=I_{D}=1\ \mathrm{mA}$$ ...
Ahsan Yousaf's user avatar
1 vote
0 answers
498 views

How do I find the point where MOSFET changes from triode region to saturation?

I have made a rough plot starting from the cutoff region, where \$\small V_{DS}=V_{DD}\$ until the input voltage crosses the threshold, and then the output voltage begins to drop (approximately ...
Ahsan Yousaf's user avatar
1 vote
0 answers
1k views

Calculating capacitance in a MOS capacitor

A \$MOS\$ capacitor with \$t_{ox}=10nm\$ has an \$n^{+}\$ polysilicon gate electrode and an \$n\$-type substrate with doping concentration \$ N_D=10^{15}/cm^3\$ . Given: \$V_T=kT/q=26mV\$, \$\...
user600016's user avatar

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