All Questions
Tagged with semiconductors solid-state-devices
62
questions
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97
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Process compatibility between a non-planar avalanche photodiode and planar CMOS at 0.130μm process technology node
I plan to integrate a non-planar P⁺⁺/i/P⁺/N⁺⁺ avalanche photodiode (APD) array with a peripheral control circuit (e.g., trans-impedance amplifier, analog-to-digital converter, and quenching circuit) ...
1
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2
answers
85
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Why does light doping imply a large temperature coefficient?
In a discussion about how one can make integrated resistors in a given IC technology, Gray, Hurst, Lewis, and Meyer (Analysis and Design of Analog Integrated Circuits) remark that if we want to use a ...
- 1,161
1
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1
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67
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Limit of applicability of "quasistatic"/capacitive picture of devices
When analyzing the transitories associated with switching in semiconductor devices, in textbook treatments one often sees the time dependence considered by including (potentially nonlinear) capacitors ...
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1
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1
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121
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Why doesn't side diffusion raise resistance of an integrated resistor?
Consider forming an integrated resistor by diffusion of n+ dopants down into some p- substrate (the corresponding pn junction is reverse biased during operation). Let \$W,L,t\$ be the width, length, ...
- 1,161
4
votes
2
answers
833
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Why are drain and source not actually perfectly symmetric?
In textbook treatments, one has that the source and drain of a MOSFET are completely symmetrical and therefore interchangeable -- the distinction is only made by which is at a higher voltage in the ...
- 1,161
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110
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Understanding thermal instability breakdown in pn junctions
I am currently reading Sze (Physics of Semiconductor Devices, 3e, Chapter 2.4.1) and am trying to understand his discussion of thermal instability breakdown/runaway in pn junctions. I have also ...
- 1,161
3
votes
1
answer
219
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Why do PMOS suffer a worse body effect than NMOS?
Gray, Hurst, Lewis, and Meyer give the following discussion around PMOS transistors which I followed except for the sentence which reads:
Good use can be made of this fact in analog circuits to ...
- 1,161
1
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1
answer
97
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Confusion about why pn junction discussion insensitive to doping variations faster than Debye length
Sze (Physics of Semiconductor Devices, 3e) gives the following discussion which relates to how equilibrium electric fields/equilibrium potential build-up at thermal equilibrium are related to doping ...
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1
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88
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Does \$\phi_{bi}\$ depend on applied voltage in non-uniformly doped junctions?
Consider a linearly graded junction
$$N_D - N_A = ax$$
for some grading constant \$a\$.
Using the standard simplifying assumptions one finds that the depletion region extent is
$$x_{SCR} = \left[\frac{...
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1
vote
2
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143
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Why do series NMOS do better than a single NMOS from a delay perspective?
My VLSI text (Weste and Harris) writes the following:
Transistors in series drop part of the voltage across each transistor and thus experience smaller fields and less velocity saturation than single ...
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3
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1
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269
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What is equilibrium carrier concentration in a semiconductor? Is it material specific? How to calculate it?
Is equilibrium carrier concentration dependent on doping density? If it is, then how to know how much the doping density should be for a particular semiconductor device?
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5
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415
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Semiconductors: electrons more mobile than holes despite being heavier?
I apologize if this is a very basic question. But I have always known it to be true that in Silicon, electrons have higher mobility than holes. From my semiconductor physics classes in first year, the ...
- 383
4
votes
3
answers
655
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Potential distribution in MOSFET
Let us assume that an NMOSFET has its source, drain and substrate grounded therefore VDS and VSB=0 V . We apply a gate voltage VGS=2 V and I want to know how this potential is distributed as we move ...
- 49
0
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1
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40
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Energy band diagram of a polar material
For a single piece of a polar material (ex. GaN, AlN, etc), there exists a constant electric field inside the material due to the bound charges at the surface.
Above figure shows the resulting band ...
- 437
2
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2
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1k
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Why does the majority carrier concentration near the junction not decrease under forward bias? (PN junction)
We see that the current due to the majority carrier decreases near the junction as shown above, which means the majority carrier concentration should also decrease since the diffusion current is given ...
- 437