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Why carriers move when Electric field is applied on Haynes-Shockley experiment
I would like to know why excess carriers/minority move when an electric field is applied at the Haynes-Shockley expirement
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1
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Temperature-Dependent Electrical resistance Si and SiC
In a power electronics device, it seems that silicon carbide (SiC) has a higher variation of electrical on-state resistance with temperature in comparison to silicon (Si). Does anybody know the reason?...
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