All Questions
Tagged with semiconductors solid-state-devices
62
questions
0
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99
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Process compatibility between a non-planar avalanche photodiode and planar CMOS at 0.130μm process technology node
I plan to integrate a non-planar P⁺⁺/i/P⁺/N⁺⁺ avalanche photodiode (APD) array with a peripheral control circuit (e.g., trans-impedance amplifier, analog-to-digital converter, and quenching circuit) ...
1
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2
answers
85
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Why does light doping imply a large temperature coefficient?
In a discussion about how one can make integrated resistors in a given IC technology, Gray, Hurst, Lewis, and Meyer (Analysis and Design of Analog Integrated Circuits) remark that if we want to use a ...
- 1,161
1
vote
1
answer
122
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Why doesn't side diffusion raise resistance of an integrated resistor?
Consider forming an integrated resistor by diffusion of n+ dopants down into some p- substrate (the corresponding pn junction is reverse biased during operation). Let \$W,L,t\$ be the width, length, ...
- 1,161
3
votes
1
answer
221
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Why do PMOS suffer a worse body effect than NMOS?
Gray, Hurst, Lewis, and Meyer give the following discussion around PMOS transistors which I followed except for the sentence which reads:
Good use can be made of this fact in analog circuits to ...
- 1,161
1
vote
1
answer
67
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Limit of applicability of "quasistatic"/capacitive picture of devices
When analyzing the transitories associated with switching in semiconductor devices, in textbook treatments one often sees the time dependence considered by including (potentially nonlinear) capacitors ...
- 20k
4
votes
2
answers
838
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Why are drain and source not actually perfectly symmetric?
In textbook treatments, one has that the source and drain of a MOSFET are completely symmetrical and therefore interchangeable -- the distinction is only made by which is at a higher voltage in the ...
- 19.4k
1
vote
2
answers
143
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Why do series NMOS do better than a single NMOS from a delay perspective?
My VLSI text (Weste and Harris) writes the following:
Transistors in series drop part of the voltage across each transistor and thus experience smaller fields and less velocity saturation than single ...
- 1,161
0
votes
1
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114
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Understanding thermal instability breakdown in pn junctions
I am currently reading Sze (Physics of Semiconductor Devices, 3e, Chapter 2.4.1) and am trying to understand his discussion of thermal instability breakdown/runaway in pn junctions. I have also ...
- 1,519
1
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1
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100
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Confusion about why pn junction discussion insensitive to doping variations faster than Debye length
Sze (Physics of Semiconductor Devices, 3e) gives the following discussion which relates to how equilibrium electric fields/equilibrium potential build-up at thermal equilibrium are related to doping ...
- 160
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votes
1
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88
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Does \$\phi_{bi}\$ depend on applied voltage in non-uniformly doped junctions?
Consider a linearly graded junction
$$N_D - N_A = ax$$
for some grading constant \$a\$.
Using the standard simplifying assumptions one finds that the depletion region extent is
$$x_{SCR} = \left[\frac{...
- 1,161
7
votes
2
answers
72k
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E-K diagram in case of semiconductors
I am currently studying solid state electronic devices and want to build my concept in this subject. Can anyone explain to me what is E-k Diagram and what is its significance?
0
votes
1
answer
800
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Given a energy band diagram, can you always calculate potential, electric field, and charge distribution?
Given a band diagram, where do you start to get the electric field and charge distribution?
CommunityBot
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3
votes
1
answer
270
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What is equilibrium carrier concentration in a semiconductor? Is it material specific? How to calculate it?
Is equilibrium carrier concentration dependent on doping density? If it is, then how to know how much the doping density should be for a particular semiconductor device?
- 5,227
2
votes
2
answers
1k
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Why does the majority carrier concentration near the junction not decrease under forward bias? (PN junction)
We see that the current due to the majority carrier decreases near the junction as shown above, which means the majority carrier concentration should also decrease since the diffusion current is given ...
- 2,137
5
votes
1
answer
416
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Semiconductors: electrons more mobile than holes despite being heavier?
I apologize if this is a very basic question. But I have always known it to be true that in Silicon, electrons have higher mobility than holes. From my semiconductor physics classes in first year, the ...
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