All Questions
9
questions
4
votes
2
answers
838
views
Why are drain and source not actually perfectly symmetric?
In textbook treatments, one has that the source and drain of a MOSFET are completely symmetrical and therefore interchangeable -- the distinction is only made by which is at a higher voltage in the ...
4
votes
3
answers
659
views
Potential distribution in MOSFET
Let us assume that an NMOSFET has its source, drain and substrate grounded therefore VDS and VSB=0 V . We apply a gate voltage VGS=2 V and I want to know how this potential is distributed as we move ...
1
vote
1
answer
3k
views
Why does channel length modulation only occur in the saturation region?
As drain voltage is increased, the reverse bias across the drain-body junction also increases and thus the width of the junction should also increase which should deplete the channel length as well. ...
0
votes
0
answers
61
views
MOSFET current at very low temperature (4K)
I am trying to model the current at low T. To do so I need to compute the integral between the fermid diract statistic and the conductivity, with respect to energy. My problem is that I cannot ...
0
votes
0
answers
43
views
Short Channel MOSFET model
I was reading on a book (Thomas Lee, The Design of CMOS Radio Frequency Integrated Circuits) that in a short channel model, since the phenomenon of drift speed saturation is very relevant, it is a ...
0
votes
1
answer
345
views
MOS Capacitor Band Edges
I am trying to understand the MOS-Capacitor band edge shapes. When negative voltage is applied for gate, why does the band edge across the insulator shift upward (and linear decreasing band edge)? ...
2
votes
1
answer
851
views
Difference between Vth and Vge?
What is the difference between the threshold voltage (Vth) and gate-emitter voltage (Vge) for IGBT devices?
How can I calculate Vth of an IGBT chip?
5
votes
2
answers
6k
views
MOSFET Depletion Region Widening
I do understand why when drain voltage (\$V_D\$) increases, the channel carriers decrease (the channel narrows), specially near the drain island, eventually reaching pinch-off phase.
What I don't get ...
3
votes
1
answer
2k
views
Why does the MOSFET drain current increase abruptly when Gate voltage is greater than the threshold voltage?
As far I've understood, channel formation takes place because of the induced negative charge on the semiconductor side of the gate capacitance. So shouldn't the charge concentration increase linearly ...