Gray, Hurst, Lewis, and Meyer give the following discussion around PMOS transistors which I followed except for the sentence which reads:
Good use can be made of this fact in analog circuits to alleviate the impact of the high body effect in these devices.
Now I understand that (assuming a single n-well process) having access to the body terminal in the case of PMOS built in n-wells lets us play games with \$V_{SB}\$ which we cannot play with \$V_{SB}\$ for the NMOS which are built right into the substrate. However, I am confused by an allusion specifically to a "high body effect in these [PMOS] devices." I am reading this as the suggestion that, ceteris paribus, PMOS suffer a worse body effect and, therefore, we use an n-well process so that we can control this more drastic body effect, rather than p-well in n-substrate so that we could control the bodies of our NMOS. Is this a correct reading? If so, why do PMOS indeed suffer a worse body effect than NMOS, ceteris paribus? There's nothing in the body parameter \$\gamma\$ which makes this obvious to me.
Source: Analysis and Design of Analog Integrated Circuits by Gray, Hurst, Lewis, and Meyer - 5th Edition, Wiley, 2009, page 144