All Questions
Tagged with semiconductors power-electronics
56
questions
-2
votes
0
answers
36
views
Why should VS always be larger than VIH? [closed]
Why is VS always larger than VIH? What are possible issues?
0
votes
1
answer
77
views
Bipolar Junction Transistor operating modes
If I use a BJT transistor as a switch, the transistor operates in the saturation or cut-off region, not in the active region.
However, some sources use the formula IC = β·IB. However, this formula is ...
- 133
0
votes
0
answers
28
views
Who is the manufacturer of the Y31 5133 mic?
My question is in this PCBA I need the information of the who is the manufacturers of the mic the full details of that mic...
- 1
0
votes
2
answers
161
views
Purpose of Schottky diode in this schematic
I have come across the power supply management section used in the Verdin Development Board, addressing overvoltage, undervoltage, overcurrent, and reverse voltage protection.
While I understand how ...
- 903
4
votes
1
answer
80
views
What is meant by Switching charge ( under Gate charge characteristics) in the given MOSFET datasheet?
What is switching charge in this MOSFET datasheet?
The switching actually takes place during Miller region. Hence I belive Qgd should be called as switching charge. But looks like the remianing gate ...
- 3,032
1
vote
0
answers
91
views
Coupling heatsink RC network to MOSFET's Cauer circuit
I am trying to understand simple RC thermal simulation to analyse the temperature rise in Rohm a 1200 V N-channel SiC MOSFET SCT3040KR.
RC Cauer parameters are as depicted in the LTspice circuit ...
- 21
4
votes
1
answer
600
views
Why do wide band gap semiconductors allow for higher electron mobilities?
Other than increased energy handling capabilities, one of the main advantages of using wide band-gap semiconductors like SiC or GaN in power electronics applications is that the switching frequency ...
0
votes
0
answers
49
views
How to calculate the creepage distance of a package through package outline?
How do I calculate the creepage distance of a package which is not specified by the manufacturer?
By looking at the drawing of the package, could I calculate it? If yes then how?
- 347
2
votes
1
answer
124
views
Multiple Source Terminals of SiC MOSFET
I want to know that most of the semiconductor top side cooled package have more than one power source terminal. I can understand by doing so you can minimze the loop inductance of gate driver loop ...
- 347
0
votes
1
answer
108
views
How can I make a load inductor for a double pulse test?
How can I make a load inductor in the lab with value of roughly 115 uH for the sake of a double pulse test measurement? Do I need an LC meter to do that?
- 347
1
vote
1
answer
720
views
Influence of gate resistors and capacitors on driving gate of mosfet
Good Day,
I wannted to ask in a typical gate driving circut of a Mosfet, we always have Rgoff, Rgon,RGS and CGS as shown in below screenschot. What is the purpose of these components in driving the ...
- 347
4
votes
0
answers
157
views
How to mitigate excessive ringing in VDS and VGS
I have a few questions regarding my measurement results in the lab for a double pulse test setup. There are three issues which I want to mitigate
.
At turn-on interval, there is excessive ringing in ...
- 347
2
votes
0
answers
169
views
Difference in simulated and measured Eon, Eoff and Erevreq for double pulse test conducted on a MOSFET
I conducted a double pulse test (DPT) on an AUIRFP4568 MOSFET in the lab as well as in LTspice. With the same setup as used in the lab I created a setup in LTspice using the SPICE model of the MOSFET. ...
- 347
1
vote
0
answers
156
views
dv/dt capability comparison of two MOSFETs
I am doing a datasheet comparison of the AUIRFP4568 and the IXTH150N15X4 MOSFETs. The MOSFET is for a three phase inverter working as MCU (Motor Control Unit) to control a PMSM motor, and will be ...
- 347
1
vote
1
answer
261
views
Conduction losses calculation of a SiC MOSFET
I have a question regarding conduction losses calculation of a SiC MOSFET. What I found in different research papers and in application notes is that you calculate the power dissipated during forward ...
- 347
0
votes
2
answers
163
views
Adapter for a function generator output
I want to order this adapter, but I can't find it on the web. Can anyone please confirm the exact name of this adapter for a function generator having a channel output and terminals for a DC power ...
- 347
0
votes
0
answers
125
views
Bandwidth: voltage-source vs. current-source gate drivers
Why do voltage-source gate drivers provide low-to-medium bandwidth that does not work well for wide band gap devices, while current-source gate drivers provide hundreds of MHz of bandwidth?
- 151
3
votes
2
answers
336
views
What is the reason why thermal aging affects only the Cds capacitance but not the Cgs or Cgd capacitances?
Please take a look at the following images, experimentally obtained from a power cycling test of a power MOSFET. After the test where thermal aging is created due to repetitive power cycles, it is ...
- 151
0
votes
1
answer
80
views
High Voltage PMOS devices availability
Generic question for experts well versed in semiconductor device physics. Most of the high voltage power switching devices seen are N-Channel (Silicon and Silicon Carbide) with varying ratings. Is ...
- 97
0
votes
1
answer
461
views
Troubleshooting Skyper 32Pro R + Adapter Board 1 Skyper 32Pro R
Hello I am trying to test an IGBT SKM145GB066D with the Adapter Board 1 Skyper 32Pro R and gate driver Skyper 32 Pro R, but cannot make it work. I've spend 2 weeks trying, but it seems like some ...
0
votes
1
answer
40
views
Energy band diagram of a polar material
For a single piece of a polar material (ex. GaN, AlN, etc), there exists a constant electric field inside the material due to the bound charges at the surface.
Above figure shows the resulting band ...
- 447
1
vote
2
answers
2k
views
Why is an N-type MOSFET used for low-side and a P-type for high-side switching?
Typically an N-MOSFET is used for low-side switching and P-type for high side switching. That's why transmission gates use both an N and a P-type MOSFET.
But I don't understand how a P-type for low-...
- 2,519
5
votes
1
answer
813
views
What is the reason of difference in distributed gate thyristor design
As in the pictures, they use different designs (current rate, voltage rate etc. are same.)
What is difference between these two designs?
- 233
0
votes
4
answers
1k
views
BJT Early effect and the small signal model
As the collector-emitter voltage changes, collector current changes due to the Early effect so the base current must also change.
In the small signal model, we only account for the change of collector ...
1
vote
1
answer
88
views
Collector current in datasheet Graphs
Here is an example of output characteristics fot IGBT devices, i.e., the "collector current (Ic)-to-collector emitter voltage (Vce)" graph. Can somebody help me find what Ic represents here? ...
- 151
4
votes
4
answers
891
views
GaN Vs SiC physic properties
Here is a table which shows the différence between GaN and SiC:
I have no knowledge about physics of components. I have just some bases. In the above table I do not see real difference between SiC ...
- 2,478
4
votes
3
answers
640
views
Need to increase the amplitude of op-amp output
I'm using this circuit to measure the RPM of a DISC rotating at 24000 rpm. This circuit is working fine. But the problem is with amplitude. It should be of 4.2V, but actually is of 2V as shown in ...
- 903
1
vote
1
answer
219
views
Formula for efficiency of half wave rectifier
I came across this formula for rectification efficiency of half wave rectifier:
η= (40.6 *resistance of load resistor )/ (resistance of load resistor+ resistance of secondary of transformer + ...
1
vote
0
answers
73
views
IGBT modelling from datasheet
how to model igbt from the APT150GN120J datasheet.
...
1
vote
0
answers
151
views
Calculation of Rated Power for IGBT Module
For an IGBT module with the following characteristics, how can we calculate the rated power? I mean how much is the rated power for this module?
- 151
1
vote
1
answer
67
views
I can't determine the value of diode zener
I can't determine the value of this Zener diode. The marking is KD H2.
-1
votes
1
answer
100
views
Fixing hot plate and the heat sink, which thermoelectric module would produce more power?
Thermoelectric coolers (TECs) are typically used to generate temperature difference. Thermoelectric generators (TEGs), however, are used for power generation. While TECs are much cheaper than TEGs, ...
- 101
1
vote
0
answers
47
views
Can anyone properly explain me the characteristic curve of the p-type JFET?
I know how a MOSFET works. But recently I wanted to know details about JFET.
When V(GS) = 0 volts there will obviously a current flowing through the p-type channel. What confuses me is how the ...
- 2,519
10
votes
2
answers
4k
views
What is the difference between CPU transistors and generic ones?
Recently I had to build a h-bridge driver for my project, wireless power transmission. I learnt that I needed to have dead-time in my PWM signal given to IR2110, which doesn't have any dead-time ...
- 364
1
vote
1
answer
80
views
Series limiting resistor?
I have used a 3.3V and a 4.7V Zener diode. What value series resistor do I need for them to work properly? The test current for 3.3V is 76mA and for 4.7V is 53mA.
- 15
0
votes
1
answer
148
views
Zero Voltage in a power semiconductor chip
In an ON-mode silicon IGBT chip operating within a real power module, is the collector contact fixed at 0 V or emitter?
What about Power SiC MOSFET?
enter link description here
- 151
-1
votes
1
answer
2k
views
Majority Carrier Devices
Why majority carrier devices have higher ON state resistance compared to the ON state resistances of minority carrier devices?
- 47
3
votes
0
answers
135
views
High frequency switching applications
I was reading that for high frequency switching applications with
semiconductors, the ratio of the electron to hole mobility should be high.
Why is it so? Is it a necessary condition always? Or ...
- 171
2
votes
0
answers
116
views
How does a MOSFET conduct in saturation region?
It is a simple question but I could not find a straightforward answer.
When a MOSFET enters saturation region, the channel length starts to decrease, and the channel width is the smallest near the ...
0
votes
1
answer
219
views
How deep does the depletion region in power diode penetrate the lightly doped n- layer under no bias?
I could find references for describing the depletion layer in a power diode under reverse bias and the consequent classification of Non-punch through and Punch-through diodes. But I couldn't find a ...
12
votes
1
answer
2k
views
Why do power diodes have a p+ n- n+ construction and why not p+ p- n+?
I've been learning about power diodes and how they differ from low power diodes with the addition of a lightly doped n-type layer.
This n-type layer improves the breakdown voltage rating of the ...
1
vote
1
answer
538
views
Ic and Vce equations of IGBT
I know in IGBTs while operating, parameters Ic (collector current) and Vce (collector-emitter voltage) are Tj (junction temperature) and Vge (gate-emitter voltage) dependent. Is there anything else ...
- 49
1
vote
1
answer
252
views
Calculation of Vce from Ic-Vge Characteristic
We have found the Ic-Vge (collector current vs gate-emitter voltage) characteristic of an IGBT device as shown below at a high Vce (collector-emitter voltage) value (here 20V) from the datasheet (...
- 49
0
votes
2
answers
818
views
Ic-Vge IGBT Curve
In the figure below, presented in the manufacturer datasheet, you can see the Ic-Vge curve of an IGBT device. As mentioned, it has been drawn at Vce=20V. What does this equality mean? Can we have such ...
- 49
0
votes
1
answer
261
views
How could the Gate-Source potential difference be neglected?
I’ve been reading the book
Electronic Principles by Malvino
In the Voltage-Divider bias section of JFET, if gate current is negligible then how did Gate Voltage attain a negative value, given Vdd ...
3
votes
1
answer
697
views
Why is Junction Temperature called so?
Why is the silicon die temperature inside a semiconductor device referred to as "Junction" Temperature ?
Though this name may make sense for minority carrier devices where there is maximum power ...
- 249
2
votes
1
answer
851
views
Difference between Vth and Vge?
What is the difference between the threshold voltage (Vth) and gate-emitter voltage (Vge) for IGBT devices?
How can I calculate Vth of an IGBT chip?
- 21
0
votes
1
answer
131
views
Temperature-Dependent Electrical resistance Si and SiC
In a power electronics device, it seems that silicon carbide (SiC) has a higher variation of electrical on-state resistance with temperature in comparison to silicon (Si). Does anybody know the reason?...
- 21
2
votes
2
answers
1k
views
Identifying parts of a transistor die
In books, I have studied that in a Transistor, the Base is the layer sandwiched in between Collector an Emitter. Wikipedia also mentions that
"The base is physically located between the emitter ...
- 346
1
vote
1
answer
1k
views
Electrical Conductivity of SAC solder
Can anybody help me find the electrical conductivity of SAC 305 (96.5Sn3Ag0.5Cu) solder? It is the most common solder in semiconductor IGBT/MOSFET power switches.
Many thanks and best regards,
- 49