All Questions
Tagged with semiconductors power-electronics
56
questions
-3
votes
0
answers
40
views
Why should VS always be larger than VIH? [closed]
Why is VS always larger than VIH? What are possible issues?
0
votes
1
answer
77
views
Bipolar Junction Transistor operating modes
If I use a BJT transistor as a switch, the transistor operates in the saturation or cut-off region, not in the active region.
However, some sources use the formula IC = β·IB. However, this formula is ...
0
votes
0
answers
28
views
Who is the manufacturer of the Y31 5133 mic?
My question is in this PCBA I need the information of the who is the manufacturers of the mic the full details of that mic...
0
votes
2
answers
161
views
Purpose of Schottky diode in this schematic
I have come across the power supply management section used in the Verdin Development Board, addressing overvoltage, undervoltage, overcurrent, and reverse voltage protection.
While I understand how ...
4
votes
1
answer
80
views
What is meant by Switching charge ( under Gate charge characteristics) in the given MOSFET datasheet?
What is switching charge in this MOSFET datasheet?
The switching actually takes place during Miller region. Hence I belive Qgd should be called as switching charge. But looks like the remianing gate ...
1
vote
0
answers
91
views
Coupling heatsink RC network to MOSFET's Cauer circuit
I am trying to understand simple RC thermal simulation to analyse the temperature rise in Rohm a 1200 V N-channel SiC MOSFET SCT3040KR.
RC Cauer parameters are as depicted in the LTspice circuit ...
4
votes
1
answer
600
views
Why do wide band gap semiconductors allow for higher electron mobilities?
Other than increased energy handling capabilities, one of the main advantages of using wide band-gap semiconductors like SiC or GaN in power electronics applications is that the switching frequency ...
0
votes
0
answers
49
views
How to calculate the creepage distance of a package through package outline?
How do I calculate the creepage distance of a package which is not specified by the manufacturer?
By looking at the drawing of the package, could I calculate it? If yes then how?
2
votes
1
answer
124
views
Multiple Source Terminals of SiC MOSFET
I want to know that most of the semiconductor top side cooled package have more than one power source terminal. I can understand by doing so you can minimze the loop inductance of gate driver loop ...
0
votes
1
answer
108
views
How can I make a load inductor for a double pulse test?
How can I make a load inductor in the lab with value of roughly 115 uH for the sake of a double pulse test measurement? Do I need an LC meter to do that?
1
vote
1
answer
720
views
Influence of gate resistors and capacitors on driving gate of mosfet
Good Day,
I wannted to ask in a typical gate driving circut of a Mosfet, we always have Rgoff, Rgon,RGS and CGS as shown in below screenschot. What is the purpose of these components in driving the ...
4
votes
0
answers
157
views
How to mitigate excessive ringing in VDS and VGS
I have a few questions regarding my measurement results in the lab for a double pulse test setup. There are three issues which I want to mitigate
.
At turn-on interval, there is excessive ringing in ...
2
votes
0
answers
169
views
Difference in simulated and measured Eon, Eoff and Erevreq for double pulse test conducted on a MOSFET
I conducted a double pulse test (DPT) on an AUIRFP4568 MOSFET in the lab as well as in LTspice. With the same setup as used in the lab I created a setup in LTspice using the SPICE model of the MOSFET. ...
1
vote
0
answers
156
views
dv/dt capability comparison of two MOSFETs
I am doing a datasheet comparison of the AUIRFP4568 and the IXTH150N15X4 MOSFETs. The MOSFET is for a three phase inverter working as MCU (Motor Control Unit) to control a PMSM motor, and will be ...
1
vote
1
answer
261
views
Conduction losses calculation of a SiC MOSFET
I have a question regarding conduction losses calculation of a SiC MOSFET. What I found in different research papers and in application notes is that you calculate the power dissipated during forward ...