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0 votes
2 answers
161 views

Purpose of Schottky diode in this schematic

I have come across the power supply management section used in the Verdin Development Board, addressing overvoltage, undervoltage, overcurrent, and reverse voltage protection. While I understand how ...
mastermind's user avatar
4 votes
1 answer
80 views

What is meant by Switching charge ( under Gate charge characteristics) in the given MOSFET datasheet?

What is switching charge in this MOSFET datasheet? The switching actually takes place during Miller region. Hence I belive Qgd should be called as switching charge. But looks like the remianing gate ...
Dynamic_equilibrium's user avatar
1 vote
0 answers
91 views

Coupling heatsink RC network to MOSFET's Cauer circuit

I am trying to understand simple RC thermal simulation to analyse the temperature rise in Rohm a 1200 V N-channel SiC MOSFET SCT3040KR. RC Cauer parameters are as depicted in the LTspice circuit ...
MerOz's user avatar
  • 21
0 votes
0 answers
49 views

How to calculate the creepage distance of a package through package outline?

How do I calculate the creepage distance of a package which is not specified by the manufacturer? By looking at the drawing of the package, could I calculate it? If yes then how?
Alison's user avatar
  • 347
2 votes
1 answer
124 views

Multiple Source Terminals of SiC MOSFET

I want to know that most of the semiconductor top side cooled package have more than one power source terminal. I can understand by doing so you can minimze the loop inductance of gate driver loop ...
Alison's user avatar
  • 347
1 vote
1 answer
720 views

Influence of gate resistors and capacitors on driving gate of mosfet

Good Day, I wannted to ask in a typical gate driving circut of a Mosfet, we always have Rgoff, Rgon,RGS and CGS as shown in below screenschot. What is the purpose of these components in driving the ...
Alison's user avatar
  • 347
4 votes
0 answers
157 views

How to mitigate excessive ringing in VDS and VGS

I have a few questions regarding my measurement results in the lab for a double pulse test setup. There are three issues which I want to mitigate . At turn-on interval, there is excessive ringing in ...
Alison's user avatar
  • 347
2 votes
0 answers
169 views

Difference in simulated and measured Eon, Eoff and Erevreq for double pulse test conducted on a MOSFET

I conducted a double pulse test (DPT) on an AUIRFP4568 MOSFET in the lab as well as in LTspice. With the same setup as used in the lab I created a setup in LTspice using the SPICE model of the MOSFET. ...
Alison's user avatar
  • 347
1 vote
0 answers
156 views

dv/dt capability comparison of two MOSFETs

I am doing a datasheet comparison of the AUIRFP4568 and the IXTH150N15X4 MOSFETs. The MOSFET is for a three phase inverter working as MCU (Motor Control Unit) to control a PMSM motor, and will be ...
Alison's user avatar
  • 347
1 vote
1 answer
261 views

Conduction losses calculation of a SiC MOSFET

I have a question regarding conduction losses calculation of a SiC MOSFET. What I found in different research papers and in application notes is that you calculate the power dissipated during forward ...
Alison's user avatar
  • 347
0 votes
0 answers
125 views

Bandwidth: voltage-source vs. current-source gate drivers

Why do voltage-source gate drivers provide low-to-medium bandwidth that does not work well for wide band gap devices, while current-source gate drivers provide hundreds of MHz of bandwidth?
Albert's user avatar
  • 151
3 votes
2 answers
336 views

What is the reason why thermal aging affects only the Cds capacitance but not the Cgs or Cgd capacitances?

Please take a look at the following images, experimentally obtained from a power cycling test of a power MOSFET. After the test where thermal aging is created due to repetitive power cycles, it is ...
Albert's user avatar
  • 151
1 vote
2 answers
2k views

Why is an N-type MOSFET used for low-side and a P-type for high-side switching?

Typically an N-MOSFET is used for low-side switching and P-type for high side switching. That's why transmission gates use both an N and a P-type MOSFET. But I don't understand how a P-type for low-...
Sadat Rafi's user avatar
  • 2,519
4 votes
4 answers
891 views

GaN Vs SiC physic properties

Here is a table which shows the différence between GaN and SiC: I have no knowledge about physics of components. I have just some bases. In the above table I do not see real difference between SiC ...
Jess's user avatar
  • 2,478
10 votes
2 answers
4k views

What is the difference between CPU transistors and generic ones?

Recently I had to build a h-bridge driver for my project, wireless power transmission. I learnt that I needed to have dead-time in my PWM signal given to IR2110, which doesn't have any dead-time ...
Aimkiller's user avatar
  • 364

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