Skip to main content

All Questions

12 votes
1 answer
2k views

Why do power diodes have a p+ n- n+ construction and why not p+ p- n+?

I've been learning about power diodes and how they differ from low power diodes with the addition of a lightly doped n-type layer. This n-type layer improves the breakdown voltage rating of the ...
Siddharth Nandhan's user avatar
10 votes
2 answers
4k views

What is the difference between CPU transistors and generic ones?

Recently I had to build a h-bridge driver for my project, wireless power transmission. I learnt that I needed to have dead-time in my PWM signal given to IR2110, which doesn't have any dead-time ...
Aimkiller's user avatar
  • 364
5 votes
1 answer
813 views

What is the reason of difference in distributed gate thyristor design

As in the pictures, they use different designs (current rate, voltage rate etc. are same.) What is difference between these two designs?
Nott's user avatar
  • 233
4 votes
3 answers
640 views

Need to increase the amplitude of op-amp output

I'm using this circuit to measure the RPM of a DISC rotating at 24000 rpm. This circuit is working fine. But the problem is with amplitude. It should be of 4.2V, but actually is of 2V as shown in ...
mastermind's user avatar
4 votes
4 answers
891 views

GaN Vs SiC physic properties

Here is a table which shows the différence between GaN and SiC: I have no knowledge about physics of components. I have just some bases. In the above table I do not see real difference between SiC ...
Jess's user avatar
  • 2,478
4 votes
1 answer
80 views

What is meant by Switching charge ( under Gate charge characteristics) in the given MOSFET datasheet?

What is switching charge in this MOSFET datasheet? The switching actually takes place during Miller region. Hence I belive Qgd should be called as switching charge. But looks like the remianing gate ...
Dynamic_equilibrium's user avatar
4 votes
1 answer
600 views

Why do wide band gap semiconductors allow for higher electron mobilities?

Other than increased energy handling capabilities, one of the main advantages of using wide band-gap semiconductors like SiC or GaN in power electronics applications is that the switching frequency ...
Andrew Bevelhymer's user avatar
4 votes
0 answers
157 views

How to mitigate excessive ringing in VDS and VGS

I have a few questions regarding my measurement results in the lab for a double pulse test setup. There are three issues which I want to mitigate . At turn-on interval, there is excessive ringing in ...
Alison's user avatar
  • 347
3 votes
1 answer
697 views

Why is Junction Temperature called so?

Why is the silicon die temperature inside a semiconductor device referred to as "Junction" Temperature ? Though this name may make sense for minority carrier devices where there is maximum power ...
spaul's user avatar
  • 249
3 votes
2 answers
336 views

What is the reason why thermal aging affects only the Cds capacitance but not the Cgs or Cgd capacitances?

Please take a look at the following images, experimentally obtained from a power cycling test of a power MOSFET. After the test where thermal aging is created due to repetitive power cycles, it is ...
Albert's user avatar
  • 151
3 votes
0 answers
135 views

High frequency switching applications

I was reading that for high frequency switching applications with semiconductors, the ratio of the electron to hole mobility should be high. Why is it so? Is it a necessary condition always? Or ...
Curiosity's user avatar
  • 171
2 votes
1 answer
851 views

Difference between Vth and Vge?

What is the difference between the threshold voltage (Vth) and gate-emitter voltage (Vge) for IGBT devices? How can I calculate Vth of an IGBT chip?
Mohsen AB's user avatar
2 votes
1 answer
124 views

Multiple Source Terminals of SiC MOSFET

I want to know that most of the semiconductor top side cooled package have more than one power source terminal. I can understand by doing so you can minimze the loop inductance of gate driver loop ...
Alison's user avatar
  • 347
2 votes
2 answers
1k views

Identifying parts of a transistor die

In books, I have studied that in a Transistor, the Base is the layer sandwiched in between Collector an Emitter. Wikipedia also mentions that "The base is physically located between the emitter ...
Rupesh Routray's user avatar
2 votes
1 answer
246 views

Why does a triac trigger with gate current in either direction?

I've been coming up to speed on thyristors, and triacs in particular. I've found detailed material on them a little hard to find, in particular on the device physics. Horowitz & Hill is silent on ...
scanny's user avatar
  • 7,172

15 30 50 per page