All Questions
7
questions
0
votes
1
answer
40
views
Energy band diagram of a polar material
For a single piece of a polar material (ex. GaN, AlN, etc), there exists a constant electric field inside the material due to the bound charges at the surface.
Above figure shows the resulting band ...
- 447
1
vote
0
answers
47
views
Can anyone properly explain me the characteristic curve of the p-type JFET?
I know how a MOSFET works. But recently I wanted to know details about JFET.
When V(GS) = 0 volts there will obviously a current flowing through the p-type channel. What confuses me is how the ...
- 2,519
3
votes
0
answers
135
views
High frequency switching applications
I was reading that for high frequency switching applications with
semiconductors, the ratio of the electron to hole mobility should be high.
Why is it so? Is it a necessary condition always? Or ...
- 171
3
votes
1
answer
697
views
Why is Junction Temperature called so?
Why is the silicon die temperature inside a semiconductor device referred to as "Junction" Temperature ?
Though this name may make sense for minority carrier devices where there is maximum power ...
- 249
2
votes
1
answer
851
views
Difference between Vth and Vge?
What is the difference between the threshold voltage (Vth) and gate-emitter voltage (Vge) for IGBT devices?
How can I calculate Vth of an IGBT chip?
- 21
0
votes
1
answer
131
views
Temperature-Dependent Electrical resistance Si and SiC
In a power electronics device, it seems that silicon carbide (SiC) has a higher variation of electrical on-state resistance with temperature in comparison to silicon (Si). Does anybody know the reason?...
- 21
0
votes
1
answer
860
views
Silicon controlled rectifier P-type gate connection and layer doping
1). In SCR the gate terminal is connected to the P type semiconductor layer. Can it be connected to N type SC layer?
2). The outer most two layers of the SCR should be highly doped as compared to ...
