All Questions
Tagged with semiconductors power-electronics
56
questions
-2
votes
0
answers
36
views
Why should VS always be larger than VIH? [closed]
Why is VS always larger than VIH? What are possible issues?
0
votes
1
answer
77
views
Bipolar Junction Transistor operating modes
If I use a BJT transistor as a switch, the transistor operates in the saturation or cut-off region, not in the active region.
However, some sources use the formula IC = β·IB. However, this formula is ...
- 133
0
votes
0
answers
28
views
Who is the manufacturer of the Y31 5133 mic?
My question is in this PCBA I need the information of the who is the manufacturers of the mic the full details of that mic...
- 1
0
votes
2
answers
161
views
Purpose of Schottky diode in this schematic
I have come across the power supply management section used in the Verdin Development Board, addressing overvoltage, undervoltage, overcurrent, and reverse voltage protection.
While I understand how ...
- 903
4
votes
1
answer
80
views
What is meant by Switching charge ( under Gate charge characteristics) in the given MOSFET datasheet?
What is switching charge in this MOSFET datasheet?
The switching actually takes place during Miller region. Hence I belive Qgd should be called as switching charge. But looks like the remianing gate ...
- 3,032
1
vote
0
answers
91
views
Coupling heatsink RC network to MOSFET's Cauer circuit
I am trying to understand simple RC thermal simulation to analyse the temperature rise in Rohm a 1200 V N-channel SiC MOSFET SCT3040KR.
RC Cauer parameters are as depicted in the LTspice circuit ...
- 21
4
votes
1
answer
600
views
Why do wide band gap semiconductors allow for higher electron mobilities?
Other than increased energy handling capabilities, one of the main advantages of using wide band-gap semiconductors like SiC or GaN in power electronics applications is that the switching frequency ...
0
votes
0
answers
49
views
How to calculate the creepage distance of a package through package outline?
How do I calculate the creepage distance of a package which is not specified by the manufacturer?
By looking at the drawing of the package, could I calculate it? If yes then how?
- 347
2
votes
1
answer
124
views
Multiple Source Terminals of SiC MOSFET
I want to know that most of the semiconductor top side cooled package have more than one power source terminal. I can understand by doing so you can minimze the loop inductance of gate driver loop ...
- 347
0
votes
1
answer
108
views
How can I make a load inductor for a double pulse test?
How can I make a load inductor in the lab with value of roughly 115 uH for the sake of a double pulse test measurement? Do I need an LC meter to do that?
- 347
1
vote
1
answer
720
views
Influence of gate resistors and capacitors on driving gate of mosfet
Good Day,
I wannted to ask in a typical gate driving circut of a Mosfet, we always have Rgoff, Rgon,RGS and CGS as shown in below screenschot. What is the purpose of these components in driving the ...
- 347
4
votes
0
answers
157
views
How to mitigate excessive ringing in VDS and VGS
I have a few questions regarding my measurement results in the lab for a double pulse test setup. There are three issues which I want to mitigate
.
At turn-on interval, there is excessive ringing in ...
- 347
2
votes
0
answers
169
views
Difference in simulated and measured Eon, Eoff and Erevreq for double pulse test conducted on a MOSFET
I conducted a double pulse test (DPT) on an AUIRFP4568 MOSFET in the lab as well as in LTspice. With the same setup as used in the lab I created a setup in LTspice using the SPICE model of the MOSFET. ...
- 347
1
vote
0
answers
156
views
dv/dt capability comparison of two MOSFETs
I am doing a datasheet comparison of the AUIRFP4568 and the IXTH150N15X4 MOSFETs. The MOSFET is for a three phase inverter working as MCU (Motor Control Unit) to control a PMSM motor, and will be ...
- 347
1
vote
1
answer
261
views
Conduction losses calculation of a SiC MOSFET
I have a question regarding conduction losses calculation of a SiC MOSFET. What I found in different research papers and in application notes is that you calculate the power dissipated during forward ...
- 347
0
votes
2
answers
163
views
Adapter for a function generator output
I want to order this adapter, but I can't find it on the web. Can anyone please confirm the exact name of this adapter for a function generator having a channel output and terminals for a DC power ...
- 347
0
votes
0
answers
125
views
Bandwidth: voltage-source vs. current-source gate drivers
Why do voltage-source gate drivers provide low-to-medium bandwidth that does not work well for wide band gap devices, while current-source gate drivers provide hundreds of MHz of bandwidth?
- 151
3
votes
2
answers
336
views
What is the reason why thermal aging affects only the Cds capacitance but not the Cgs or Cgd capacitances?
Please take a look at the following images, experimentally obtained from a power cycling test of a power MOSFET. After the test where thermal aging is created due to repetitive power cycles, it is ...
- 151
0
votes
1
answer
80
views
High Voltage PMOS devices availability
Generic question for experts well versed in semiconductor device physics. Most of the high voltage power switching devices seen are N-Channel (Silicon and Silicon Carbide) with varying ratings. Is ...
- 97
0
votes
1
answer
461
views
Troubleshooting Skyper 32Pro R + Adapter Board 1 Skyper 32Pro R
Hello I am trying to test an IGBT SKM145GB066D with the Adapter Board 1 Skyper 32Pro R and gate driver Skyper 32 Pro R, but cannot make it work. I've spend 2 weeks trying, but it seems like some ...
0
votes
1
answer
40
views
Energy band diagram of a polar material
For a single piece of a polar material (ex. GaN, AlN, etc), there exists a constant electric field inside the material due to the bound charges at the surface.
Above figure shows the resulting band ...
- 447
1
vote
2
answers
2k
views
Why is an N-type MOSFET used for low-side and a P-type for high-side switching?
Typically an N-MOSFET is used for low-side switching and P-type for high side switching. That's why transmission gates use both an N and a P-type MOSFET.
But I don't understand how a P-type for low-...
- 2,519
5
votes
1
answer
813
views
What is the reason of difference in distributed gate thyristor design
As in the pictures, they use different designs (current rate, voltage rate etc. are same.)
What is difference between these two designs?
- 233
0
votes
4
answers
1k
views
BJT Early effect and the small signal model
As the collector-emitter voltage changes, collector current changes due to the Early effect so the base current must also change.
In the small signal model, we only account for the change of collector ...
1
vote
1
answer
88
views
Collector current in datasheet Graphs
Here is an example of output characteristics fot IGBT devices, i.e., the "collector current (Ic)-to-collector emitter voltage (Vce)" graph. Can somebody help me find what Ic represents here? ...
- 151
4
votes
4
answers
891
views
GaN Vs SiC physic properties
Here is a table which shows the différence between GaN and SiC:
I have no knowledge about physics of components. I have just some bases. In the above table I do not see real difference between SiC ...
- 2,478
4
votes
3
answers
640
views
Need to increase the amplitude of op-amp output
I'm using this circuit to measure the RPM of a DISC rotating at 24000 rpm. This circuit is working fine. But the problem is with amplitude. It should be of 4.2V, but actually is of 2V as shown in ...
- 903
1
vote
1
answer
219
views
Formula for efficiency of half wave rectifier
I came across this formula for rectification efficiency of half wave rectifier:
η= (40.6 *resistance of load resistor )/ (resistance of load resistor+ resistance of secondary of transformer + ...
1
vote
0
answers
73
views
IGBT modelling from datasheet
how to model igbt from the APT150GN120J datasheet.
...
1
vote
0
answers
151
views
Calculation of Rated Power for IGBT Module
For an IGBT module with the following characteristics, how can we calculate the rated power? I mean how much is the rated power for this module?
- 151