All Questions
Tagged with semiconductors power-electronics
56
questions
0
votes
2
answers
163
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Adapter for a function generator output
I want to order this adapter, but I can't find it on the web. Can anyone please confirm the exact name of this adapter for a function generator having a channel output and terminals for a DC power ...
- 347
0
votes
0
answers
126
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Bandwidth: voltage-source vs. current-source gate drivers
Why do voltage-source gate drivers provide low-to-medium bandwidth that does not work well for wide band gap devices, while current-source gate drivers provide hundreds of MHz of bandwidth?
- 151
3
votes
2
answers
336
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What is the reason why thermal aging affects only the Cds capacitance but not the Cgs or Cgd capacitances?
Please take a look at the following images, experimentally obtained from a power cycling test of a power MOSFET. After the test where thermal aging is created due to repetitive power cycles, it is ...
- 151
0
votes
1
answer
80
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High Voltage PMOS devices availability
Generic question for experts well versed in semiconductor device physics. Most of the high voltage power switching devices seen are N-Channel (Silicon and Silicon Carbide) with varying ratings. Is ...
- 97
0
votes
1
answer
462
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Troubleshooting Skyper 32Pro R + Adapter Board 1 Skyper 32Pro R
Hello I am trying to test an IGBT SKM145GB066D with the Adapter Board 1 Skyper 32Pro R and gate driver Skyper 32 Pro R, but cannot make it work. I've spend 2 weeks trying, but it seems like some ...
0
votes
1
answer
40
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Energy band diagram of a polar material
For a single piece of a polar material (ex. GaN, AlN, etc), there exists a constant electric field inside the material due to the bound charges at the surface.
Above figure shows the resulting band ...
- 447
1
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2
answers
2k
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Why is an N-type MOSFET used for low-side and a P-type for high-side switching?
Typically an N-MOSFET is used for low-side switching and P-type for high side switching. That's why transmission gates use both an N and a P-type MOSFET.
But I don't understand how a P-type for low-...
- 2,519
5
votes
1
answer
813
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What is the reason of difference in distributed gate thyristor design
As in the pictures, they use different designs (current rate, voltage rate etc. are same.)
What is difference between these two designs?
- 233
0
votes
4
answers
1k
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BJT Early effect and the small signal model
As the collector-emitter voltage changes, collector current changes due to the Early effect so the base current must also change.
In the small signal model, we only account for the change of collector ...
1
vote
1
answer
88
views
Collector current in datasheet Graphs
Here is an example of output characteristics fot IGBT devices, i.e., the "collector current (Ic)-to-collector emitter voltage (Vce)" graph. Can somebody help me find what Ic represents here? ...
- 151
4
votes
4
answers
891
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GaN Vs SiC physic properties
Here is a table which shows the différence between GaN and SiC:
I have no knowledge about physics of components. I have just some bases. In the above table I do not see real difference between SiC ...
- 2,478
4
votes
3
answers
640
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Need to increase the amplitude of op-amp output
I'm using this circuit to measure the RPM of a DISC rotating at 24000 rpm. This circuit is working fine. But the problem is with amplitude. It should be of 4.2V, but actually is of 2V as shown in ...
- 903
1
vote
1
answer
219
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Formula for efficiency of half wave rectifier
I came across this formula for rectification efficiency of half wave rectifier:
η= (40.6 *resistance of load resistor )/ (resistance of load resistor+ resistance of secondary of transformer + ...
1
vote
0
answers
73
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IGBT modelling from datasheet
how to model igbt from the APT150GN120J datasheet.
...
1
vote
0
answers
151
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Calculation of Rated Power for IGBT Module
For an IGBT module with the following characteristics, how can we calculate the rated power? I mean how much is the rated power for this module?
- 151