Skip to main content

All Questions

1 vote
1 answer
67 views

I can't determine the value of diode zener

I can't determine the value of this Zener diode. The marking is KD H2.
Bousselham Bousselham's user avatar
-1 votes
1 answer
100 views

Fixing hot plate and the heat sink, which thermoelectric module would produce more power?

Thermoelectric coolers (TECs) are typically used to generate temperature difference. Thermoelectric generators (TEGs), however, are used for power generation. While TECs are much cheaper than TEGs, ...
mhn_namak's user avatar
  • 101
1 vote
0 answers
47 views

Can anyone properly explain me the characteristic curve of the p-type JFET?

I know how a MOSFET works. But recently I wanted to know details about JFET. When V(GS) = 0 volts there will obviously a current flowing through the p-type channel. What confuses me is how the ...
Sadat Rafi's user avatar
  • 2,519
10 votes
2 answers
4k views

What is the difference between CPU transistors and generic ones?

Recently I had to build a h-bridge driver for my project, wireless power transmission. I learnt that I needed to have dead-time in my PWM signal given to IR2110, which doesn't have any dead-time ...
Aimkiller's user avatar
  • 364
1 vote
1 answer
80 views

Series limiting resistor?

I have used a 3.3V and a 4.7V Zener diode. What value series resistor do I need for them to work properly? The test current for 3.3V is 76mA and for 4.7V is 53mA.
Kartikey's user avatar
0 votes
1 answer
148 views

Zero Voltage in a power semiconductor chip

In an ON-mode silicon IGBT chip operating within a real power module, is the collector contact fixed at 0 V or emitter? What about Power SiC MOSFET? enter link description here
Albert's user avatar
  • 151
-1 votes
1 answer
2k views

Majority Carrier Devices

Why majority carrier devices have higher ON state resistance compared to the ON state resistances of minority carrier devices?
Jibe's user avatar
  • 47
3 votes
0 answers
135 views

High frequency switching applications

I was reading that for high frequency switching applications with semiconductors, the ratio of the electron to hole mobility should be high. Why is it so? Is it a necessary condition always? Or ...
Curiosity's user avatar
  • 171
2 votes
0 answers
116 views

How does a MOSFET conduct in saturation region?

It is a simple question but I could not find a straightforward answer. When a MOSFET enters saturation region, the channel length starts to decrease, and the channel width is the smallest near the ...
Siddharth Nandhan's user avatar
0 votes
1 answer
219 views

How deep does the depletion region in power diode penetrate the lightly doped n- layer under no bias?

I could find references for describing the depletion layer in a power diode under reverse bias and the consequent classification of Non-punch through and Punch-through diodes. But I couldn't find a ...
Siddharth Nandhan's user avatar
12 votes
1 answer
2k views

Why do power diodes have a p+ n- n+ construction and why not p+ p- n+?

I've been learning about power diodes and how they differ from low power diodes with the addition of a lightly doped n-type layer. This n-type layer improves the breakdown voltage rating of the ...
Siddharth Nandhan's user avatar
1 vote
1 answer
538 views

Ic and Vce equations of IGBT

I know in IGBTs while operating, parameters Ic (collector current) and Vce (collector-emitter voltage) are Tj (junction temperature) and Vge (gate-emitter voltage) dependent. Is there anything else ...
Mohsen's user avatar
  • 49
1 vote
1 answer
252 views

Calculation of Vce from Ic-Vge Characteristic

We have found the Ic-Vge (collector current vs gate-emitter voltage) characteristic of an IGBT device as shown below at a high Vce (collector-emitter voltage) value (here 20V) from the datasheet (...
Mohsen's user avatar
  • 49
0 votes
2 answers
818 views

Ic-Vge IGBT Curve

In the figure below, presented in the manufacturer datasheet, you can see the Ic-Vge curve of an IGBT device. As mentioned, it has been drawn at Vce=20V. What does this equality mean? Can we have such ...
Mohsen's user avatar
  • 49
0 votes
1 answer
261 views

How could the Gate-Source potential difference be neglected?

I’ve been reading the book Electronic Principles by Malvino In the Voltage-Divider bias section of JFET, if gate current is negligible then how did Gate Voltage attain a negative value, given Vdd ...
Varun Patel's user avatar

15 30 50 per page