I have selected an SiC MOSFET (UJ3C120040K3S) for my pulsed power application. My rise and fall time requirements are both 20 nS. My gate drive voltage will be 15 V. Based on the total gate charge value of 51 nF provided in the datasheet, I calculated the gate capacitance to be 3.4 nF (Cg = Qg/Vg).
In order to calculate the drive strength I calculated the gate current as follows: Ig = Qg/tr which was equal to 5.8A. Based on this gate current, I selected a this driver. In table 2 of the driver datasheet the rise time and fall time values are 4 nS typical for a Cload of 1.8 nF. I have a couple of questions.
- My gate capacitance is 3.4 nF whereas the Cload is 1.8 nF. How do I scale this value to find out the exact rise and fall times?
- Should the rise and fall times of the driver be more or less than that of the MOSFET?