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I have read some literature to know that Raman intensity corresponds to the inelastic scattering of light with ion vibrations, and the positions of Raman peak correspond to the energy of phonon.

My question is on the large crystals such as large graphene, in which the phonon modes have wave number k. I found in many literature such as [10.1016/j.jssc.2011.02.009], only the gamma point phonon were considered, why? Is it a kind of approximation? And what is the physical reason behind the approximation.

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  • $\begingroup$ Consider the momentum ($k$) of a phonon vs a photon. $\endgroup$
    – Jon Custer
    Commented Sep 2, 2020 at 13:55
  • $\begingroup$ Do you means the k of phonon should be identical to photon? But I found incident ray of Raman device was scattered to every angles, maybe the active phonon momentum is spreading over large range. $\endgroup$
    – Andrew
    Commented Sep 2, 2020 at 14:30

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In deficit k cohesion or adhesive or covalent bond structure non-chemically but harmonically through electronic microscopic or oscillation dissertive spacing analysis and readings should get you the dispersion rate and in which a pattern on how that particulars of the event may problematic to track in visual scales but pixels can be use through some bio scale in witch to germinate the hybrid specimen or mechanical further microscopic nanotech inclusion integrated along with macrobio with gna helix capability trip and quad helix

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