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To prevent closing as duplicate immediately, there is the list of the most relevant questions:

  1. How to drive a Peltier element?
  2. Driving a Peltier w/ PWM or analog out
  3. Driving a Peltier element with PWM
  4. Peltier Driving Circuit

There are more, but neither provides a (complete) schematic for high-frequency PWM mode with filtering. Also, a lot of questions & answers suggest discrete gate drivers, I'm unsure why given that gate driving ICs are readily available. So, with all the info given on the topic, I've designed the circuit (using KiCad): circuit 12 V is provided by a common ATX PSU. The gate driver is IRS44273LPBF, the Peltier cooler is TEC1-12710, the MOSFET is AO4410, diodes are Schottky SS54. The inductor was salvaged from a PSU years ago, the inductance is about 1 uH, the saturation current is unknown but should be enough. The PWM signal will be produced by a MCU. The simulation in Microcap 12 shows that everything should be well, however, there is no model for the AO4410, so IRLZ24NS was used instead.

Are there any flaws in the design, and what improvements to the circuit can be suggested?

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  • \$\begingroup\$ please add a link to the source of the image to your question... do not use a comment \$\endgroup\$
    – jsotola
    Commented Jun 5 at 16:48
  • \$\begingroup\$ @jsotola sorry, what link? It is the screenshot I've captured and uploaded. \$\endgroup\$
    – Suthiro
    Commented Jun 5 at 17:16
  • \$\begingroup\$ then you must state that the circuit is your own design \$\endgroup\$
    – jsotola
    Commented Jun 5 at 18:31
  • \$\begingroup\$ Is a high frequency useful when you consider the thermal mass of the object to control the temperature of and the required temperature hysteresis? Maybe something that works at, say, 0.01 Hz would be as effective. \$\endgroup\$ Commented Jun 5 at 18:48
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    \$\begingroup\$ @Suthiro, why would you believe current has a direct relationship to the temperature of the hot side? Blocking heat flow from the hot side, or excessive heat input on the cold side, could raise the temp of the device to the point it is damaged. \$\endgroup\$ Commented Jun 6 at 17:07

1 Answer 1

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The selected MOSFET AO4410 is not the optimal choice in this context. Logic level FETs tend to have large gate capacitance but yor gate driver does not require a FET with that low threshold voltage.

Driving a 10 nF gate with 10 Ω at 1 MHz will introduce significant switching losses.

There are FETs with less than 2 nF gate capacitance and even lower on resistance < 3 mΩ available like e.g. BSC0502NSIATMA1.

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  • \$\begingroup\$ Good point. I'll reconsider the choice of the FET. Thanks. \$\endgroup\$
    – Suthiro
    Commented Jun 6 at 3:40
  • \$\begingroup\$ Decided to use 6.8 Ω gate resistor and IRF8714TRPBF. Thanks again. \$\endgroup\$
    – Suthiro
    Commented Jun 18 at 16:29
  • \$\begingroup\$ Good choice, very fast FET. \$\endgroup\$
    – Jens
    Commented Jun 19 at 6:21

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