Consider a silicon semiconductor material which is having a cuboid shape of dimensions \$2\times 2\times 1\ \mathrm{cc}\$, suppose the atomic density of silicon is \$10^{22}/\mathrm{cc}\$, so in all there are \$18\times 10^{22}\$ atoms. Band theory says each discrete energy level for a single silicon atom would be split into \$18\times 10^{22}\$ levels so that the Pauli principle is followed.
My question is that if this is the case then when we find the hole or free electron concentration using Fermi distribution and density of states, why that result is a constant quantity i.e. not depending on which volume region you are considering it (considering temperature is constant). Since one can observe that there may be a situation that in the first location of volume 1 cc that the corresponding free electron energy levels is in the range of E1 to E2 and in the second location of volume 1 cc its in the E3 to E4 range, so why we expect the electron concentration to be remaining same per unit volume?? Whose expression is a constant being equal to \$N_c(\frac{e^{E_c - E_f}}{KT})\$ ??
Or is the reason it turns out to be constant because it indicates average concentration of free electrons and not exact? As the integration was done for whole energy levels of conduction band for free electron concentration calculation.