I am trying to find out the 'inductor' responsible for secondary side voltage ringing observed when flyback MOSFET(SW) turns on using LT8300 simulation in LTspice.
Frequency of ringing observed is around 195 MHz.
Capacitance of D1 is ringing with inductor and creating oscillations of frequency 195 MHz.
Considering the very high oscillation frequency, its probably the leakage inductance of secondary side and diode capacitance.
Why secondary side inductance of 7.91 uH is not participating in this ringing?
Capacitance across diode sees negative voltage at secondary transformer node and easier to transfer the energy into secondary side winding?
Thanks