Samsung Semiconductor’s Post

Join Tae Han & Nixon Mathew to learn how Analog Devices’ GaN power solutions simplify the design of robust, energy-efficient, smaller-sized power systems, solving the key challenges engineers face when considering the switch from silicon FETs.

Why is GaN-on-Diamond material the future of chip technology? 🔥 Extreme Thermal Management: Significantly reduces device self-heating, 40-60% 🔌 Record DC Power Dissipation: Handles exceptionally high power levels (56 W/mm), ⚡ Preserved Electrical Properties: Maintains critical electrical performance after Diamond deposition 📈 New Limits: Enabling Continuous Wave (CW) rather than pulsed performance at ever higher frequencies and power levels If you want to dive into the details, read our technical study 👇 https://lnkd.in/g-ScX8JK 

The world is heading into the age of gate-all-around (GAA) or nanosheet transistors. The new device is opening the door to continuous device scaling. In this Electronic Design article, Julien Ryckaert (VP Logic Technologies at imec) helps you to better understand the case in favor of the nanosheet and its unique advantages.

How Optical Module Manufacturers Improve the Reliability of Gigabit Optical Transceivers and 10 Gigabit Optical Transceivers This article will discuss in depth how to improve the reliability of optical transceivers, including material selection, production process optimization, advanced testing technology and the application of stability monitoring systems, etc. https://lnkd.in/gh_3p6nT

Mosfet vs transistor, High voltage transistor, Mosfet circuits, transistor circuits

Millimeter wave (#mmWave) frequencies are essential for transferring more data quickly, but they also require different packaging #technology to minimize loss and drift. That opens up a number of tradeoffs around Antenna in Package (AiP), Antenna on Package (AoP), flexible #circuits, and different substrates. This #techtalk by Curtis Zwenger, VP, of Engineering and Technical Marketing at Amkor Technology, Inc. discusses the many new challenges ranging from over-the-air testing and #crosstalk to impedance matching. Watch it here https://lnkd.in/ga2eskxj #advancedpackaging #5G #6G #crosstalk #semiconductor #wirelesscommunications #semiconductors #semiconductorindustry #antenna #antennas #AiP #engineering #packaging #wireless #5gtechnology #webinar #tech #electronicsengineering

GAAFET (Gate all-around field effect transistor) devices will soon enable new levels of standby performance for mobile devices, compared to FinFETs: “One very significant benefit is the power draw. A 2020 study found that when it is turned off, a nano sheet gate all around transistor draws 20-35% less power than a FinFET depending on the device’s dimensions.” https://lnkd.in/gb5--VXb

Happy to share our recent work on a tunnel junction-based GaN micro-light emitting transistor (uLET) that offers a voltage/capacitive control scheme for GaN uLEDs with reduced switching charge. The monolithic integration of an n-channel GaN FET structure on top of a standard Ga-polar LED+TJ structure allows the FET channel charge to control the current into the LED active region. This three-terminal device enables direct optical modulation of the uLED through gate voltage control. The monolithic approach can be applied to standard GaN uLEDs of any wavelength, polychromatic structures, or any number of active region LEDs. While microLED displays benefit from this technology, Li-fi/VLC or on-chip communication systems can also leverage the increased switching speed of the devices. I extend my gratitude to my supervisor Siddharth Rajan, my labmates, and our collaborators for their support in this project. #microLED #display #uLET For more details on the device's performance, check out our published article:

Power mosfet, mosfet gate, Transistor switch, bjt transistor, Mosfet circuits

Opto coupler, High voltage optocoupler, transistor opto, high speed optocoupler