Balaji Srinivasan’s Post

Pyroelectricity-based detectors developed at A*STAR’s Institute of Microelectronics (IME) are helping researchers better monitor greenhouse gases (GHGs) like carbon dioxide (CO₂) 🔍 Led by Principal Scientist Doris Ng, the IME team created detectors using aluminium nitride (AlN) and scandium aluminium nitride (ScAlN), which are compatible with complementary metal-oxide-semiconductor (CMOS) electronics. Testing showed that the ScAIN detectors outperformed the AIN-based ones in terms of sensitivity. These were able to gauge CO₂ concentrations as low as 100 ppm and had response times of about one second, making them much faster than commercially available detectors. 💡 The promising results of the study prompted Ng and colleagues to continue exploring new possibilities for the detectors: “We're looking at building multi-gas sensors, where we try to integrate sensors for multiple gases into a single sensor.” For more information on their work, check out the full article linked below 👇 --- #scicomm #science #technology #STEM #research #innovation #ASTAR #IME #USS #climatechange #greenhousegas #electronics #environmentalmonitoring

Recently, a research team from Peking University has achieved remarkable results in the field of ultra-high voltage gallium nitride (GaN) technology. The team released an important study at the 2023 IEDM conference, demonstrating their innovation in improving the voltage withstand capabilities of GaN devices. The newly developed 4500V GaN transistor successfully produced a new device on a sapphire substrate by introducing a unique active passivation structure. This breakthrough technology not only significantly increases the breakdown voltage of the device, but also successfully achieves a withstand voltage of over 6500V, effectively overcoming the dynamic resistance problem that has long plagued the industry. In traditional concepts, GaN power devices are considered unsuitable for kilovolt-level industrial electronic applications, mainly due to its dynamic resistance degradation problem in high-voltage operating environments. However, this technology from Peking University has completely changed this situation. Their research revealed the "dynamic threshold voltage" characteristics of GaN devices, which means that the threshold voltage of the device actually changes dynamically and is not caused by material defects. By introducing an active passivation layer, the research team successfully neutralized the surface charge, effectively solved the dynamic resistance problem, and maintained a high charge concentration in the channel by utilizing the field effect of the gate voltage. In addition, they also found that when the p-type layer is thin enough, the device's ultra-high voltage withstand capability can be achieved. This series of technological innovations enable GaN power devices to not only have ultra-high voltage withstand capabilities, but also achieve enhanced operating modes and ultra-low dynamic resistance. It is expected to play an important role in new energy vehicles, rail transportation, power transmission and other fields.#chip #semiconductor #electronic

Miniaturized analytical instruments have drawn significant interest as point-of-care testing requirements have grown. Due to their facile operation, portability, high sensitivity, and quick analysis times, miniature electrochemical sensors have been much sought after in analytical research. In this work, we have developed a low-cost three-electrode system on a miniaturized patterned substrate as a device-on-mask capable of non-enzymatically detecting blood equivalent glucose. The design inculcates a built-in reservoir to direct samples to the three electrodes, contain large sample volumes, prevent spillage, and avoid short circuits from occurring. Response of the sensor over a wide range of blood equivalent glucose concentrations (50 mg/dL to 350 mg/dL) is highly linear (R2 ~0.98). The active sensing material, poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) modified with reduced graphene oxide (GO), is capable of detecting glucose with a sensitivity of 139.25 µAmM-1cm-2 and 22.357 µΩ-1mM-1; a detection limit of 6.97 mg/dL and 0.098 mg/dL using Cyclic Voltammetry (CV) and Electrical Impedance Spectroscopic (EIS), respectively, which were the techniques utilized to characterize the device and showcase its remarkable sensing capability. Read the full article: https://lnkd.in/dPJ8MiBq Congratulations to Subham Das Vibhas Chugh Chirantan Das for this work. Thanks to all collaborators, group members, funding agencies, and IISERB for their support. Happy to share that this paper has also been accepted for IEEE SENSORS 2023 for presentation. Mitradip Bhattacharjee EECS - IISER Bhopal IEEE #research #journal #sensor #serb #werabledevices #electrochemicalsensor

Thesis Examination Announcement Title: Impact of Temperature Variations on 6T SRAM Cell based on GNRFET Technology Student: Engr. Amnah Alrashed Supervisor: Dr. Mahmoud Ben Naser Convener: Prof. Imtiaz Ahmad Examination committee member: Dr. Khalid Alzamel Date and Time: Wednesday 18th October,2023 at 12:30 pm Location: S02D1141 Abstract: Graphene nano-ribbon field effect transistors (GNRFETs) are among most popular nano-scale transistors used to replace metal oxide semiconductors field effect transistors MOSFET transistors (MOSFETs), such as complementary metal oxide semiconductors (CMOS) which are used in many devices and applications. One of the main reasons to use GNRFETs is for their excellent properties, such as acting as a good carrier-transport with higher current on-to-off ratio than MOSFETs and its ability to improve circuit performance even after applying changes in terms of process, voltage, and temperature factors (PVT), which make it much better than other MOSFET transistors. In this thesis, we aim to discuss and present the performance of the six-transistors static random-access-memory (SRAM) cell model based on 10-nm GNRFETs technology in comparison with the traditional 10-nm 6T SRAM MOSFET in terms of power and delay in read and write operations. Also, the performance of the 6T-SRAM cell model based on the GNRFETs technology was performed under temperature variations. The power consumed in the read operation using the GNRFET was less than the power consumed by MOSFET by 13.5%. In the write operation, the power consumed using the GNRFET was less than the power consumed using MOSFET by 21.6%. Moreover, the delay measured in the read operation using the GNRFET was less than the delay measured in the MOSFET by 10.6%. In the write operation, the delay measured using GNRFET was less than the delay measured using MOSFET by 10%. Finally, temperature variations were applied on the circuit in a range from 30°C to 70°C. This study showed a positive correlation between power and temperature and an inverse correlation between delay and temperature.

#techtuesday Researchers at Indian Institute of Technology, Madras have developed a novel Integrated Flat Thermosyphon Heat Sink (IFTHS) with enhanced performance for #cooling #electronic chips. The electronic component lifespan was increased, and the room air cooling load was also reduced with the IFTHS, as per the study. Thus, IFTHS contributes to more #energyefficient chip-level #thermalmanagement in energy-intensive data centers. The new technology thus has the potential to enhance the cooling effectiveness of the systems in energy-intensive sectors, and in particular for data centres. Read: https://lnkd.in/dH_S4_7b DOI: https://lnkd.in/dC635s38

Plasma technology is promising a path towards revolutionizing energy harvesting through the creation of advanced materials. This latest news article shows researchers have developed novel materials with tailored properties suitable for more efficient energy storage and flexible electronics applications. Incorporating plasma into the fabrication process not only facilities low temperature synthesis but also reduces power requirements, marking significant strides towards sustainable energy solutions. #plasmatechnology #advancedmaterials #flexibleelectronics #semiconductors #semiconductormanufacturing #semiconductordevices #semiconductortechnology

#University of #Kerala #researchers’ #work on #semiconductors all set to #revolutionise #electronics #sector by— #SoviVidyadharan (27th Feb, 2024) #THIRUVANANTHAPURAM : Researchers in the University of Kerala have #developed the know-how for #manufacturing #cost-#effective #semiconducting #oxides that have a range of #applications, mainly as #sensors in #electronics #industry. The new method, which enables production of the semiconductor material in low temperature with lesser infrastructure requirement, is poised to revolutionise existing manufacturing processes. The research was carried out by Akhil M Anand as part of his doctoral thesis under the guidance of R Jayakrishnan, associate professor, physics, KU. The findings have been #published in the #international #journal ‘#Materials for #renewable and #sustainable #energy’. #Link: ⤵️ https://lnkd.in/g4RpFTtp

Journal title: Compact circularly polarized 2 and 4 port multiple input multiple output antennas with bandstop filter isolation technique Author of the journal: Dr. Tanweer. Department Name: Electronics & Communication Engineering Journal name: AEJ - Alexandria Engineering Journal Published – March 2023, Publication: International. Congratulations to Dr. Tanweer on the publication of your research article titled "Compact Circularly Polarized 2 and 4 Port Multiple Input Multiple Output Antennas with Bandstop Filter Isolation Technique" in the esteemed AEJ - Alexandria Engineering Journal. Your work in the field of Electronics & Communication Engineering is both innovative and significant. The development of compact circularly polarized MIMO antennas with bandstop filter isolation technique represents a valuable contribution to wireless communication technology. This international publication reflects your expertise and commitment to advancing the capabilities of communication systems. Well done on this remarkable achievement. #CommunicationEngineering #MIMO #ResearchExcellence #InternationalPublication DOI: https://zurl.co/UkSr Compact circularly polarized 2 and 4 port multiple input multiple output antennas with bandstop filter isolation technique Reduction of mutual coupling in the radiating elements of multiple input multiple output (MIMO) antenna is always an issue and a big challenge for ant… https://zurl.co/tYmt -Cdr.Dr.Anil Rana, Director-MIT Manipal

IITM Technology Available for Licensing: Sensor Technology: LCD- supported thin film graphene electrodes. Target Industry for Licensing: Sensors, Environmental Engineering Technology Key features: 1. Simple and Facile way for the formation of cost-effective binder/linker free thin film graphene electrode. 2. Conductive polymeric dyes present on the surface of the LCD enhances the attachment of graphene oxide(GO) & act as electrochemical platform for the electrochemical reduction of GO. (Refer Figs. 3A & 3B) 3. GO was drop casted onto LCD support matrix and dried to form uniform thin film. 4. The eco-friendly electrode is electrochemically reduced & is characterized by amine, amide or aromatic C-H bonds between the polymeric dye layer and the graphene. Interested parties may kindly get in touch with Technology Transfer Office, IC&SR at ipoffice2@iitm.ac.in and Dr. Dara Ajay, Head - TTO at smipm-icsr@icsrpis.iitm.ac.in #grapheneelectrodes #sensors #environmentalengineering #electronicsmanufacturing #technologytransfer #licensing #iitmadras #graphene #lcd Indian Institute of Technology, Madras Office of Industrial Consultancy and Sponsored Research, IIT Madras Dr. Dara Ajay, PhD, LLM Prof. Indumathi M. Nambi Divyapriya Govindaraj

⚡Exploring Energy Transport in Semiconductors⚡ As an engineering student, I spent last week diving into how energy moves in semiconductors. Here are some cool things I discovered: 🔍 Beyond Just Heat Conductivity: The traditional way of looking at semiconductor energy transport focuses only on heat conductivity, but there's a lot more going on: 1. Thermal Diffusion: Nonequilibrium temperatures can cause electrical currents of electrons and holes, even without a total electrical current, due to recombination. 2. Energy Flux Density: In isolated nondegenerate bipolar semiconductors, energy flux varies from Fourier’s law, influenced by electrical conductivities, bandgap, charge carrier relaxation mechanisms, carrier lifetimes, and concentrations. 3. Drift Motion Contribution: The movement of charge carriers adds extra energy flux, especially with temperature gradients. Energy flux densities are found for different recombination scenarios and temperature gradients without light absorption or illumination. Electrons and holes move from hot to cool ends, generating extra energy flux through their drift motion. Notably, in true monopolar semiconductors, the energy flux density follows the classic expectations. The role of electron and hole transport in energy transfer opens up new avenues for research and innovation. It's fascinating to think about the applications for these theories. Do you think there will be any possible utilization? #Engineering #Semiconductors #EnergyTransport #StudentResearch #STEM