Asahi Kasei’s Post

Electronic Specifier Ltd's Harry Fowle wrote a great piece on gallium nitride (GaN) and how it offers significant advantages over traditional silicon-based semiconductors like increased switching speeds and faster charging. Although GaN design comes with some challenges, its potential is large enough that the GaN power electronics market could exceed $2B by 2025! Traditionally, compound #semiconductor materials like GaN are difficult to manufacture due to crystal defects, but recent experiments with our MST film have shown promising results. I’m hopeful our progress will help unlock GaN’s full potential! https://bit.ly/3V8fsLZ

What role does the emphasis on power saving play in the forecasted growth of the #superjunction MOSFET market? The super junction MOSFET market is poised for substantial growth fueled by rising reliance on #electricalequipment, machinery, and a growing emphasis on power conservation. Additionally, the market stands to gain from the surge in the adoption of electric vehicles (#EVs). Key Market Players: Toshiba, STMicroelectronics.., ROHM Co., Ltd., Vishay Intertechnology, Inc., Infineon Technologies, Fuji Electric Co., Ltd., Alpha Omega , IceMOS Technology Corporation, Magnachip Semiconductor, 強茂 PANJIT International Inc. Explore the market overview: https://lnkd.in/dDXzibUu #SuperJunctionMOSFET #MarketExpansion #ElectricalEquipment #PowerSaving #ElectricVehicles #MarketOpportunity #FabricationChallenges #ForecastedGrowth

Join Us at #SEMICONTAIWAN2023 AIXTRON SE 𝗹𝗮𝘂𝗻𝗰𝗵𝗲𝘀 𝗻𝗲𝘄 𝗚𝟭𝟬-𝗚𝗮𝗡 𝘀𝘆𝘀𝘁𝗲𝗺 𝗮𝘁 𝗦𝗘𝗠𝗜𝗖𝗢𝗡 𝗧𝗮𝗶𝘄𝗮𝗻 The new G10-GaN provides best-in-class performance for high-volume manufacturing of Gallium Nitride (GaN) based power and radio frequency devices. We are introducing the tool's new innovative technical features at the upcoming 𝗦𝗘𝗠𝗜𝗖𝗢𝗡 𝗧𝗮𝗶𝘄𝗮𝗻 (𝗦𝗲𝗽𝘁𝗲𝗺𝗯𝗲𝗿 𝟲-𝟴, 𝟮𝟬𝟮𝟯) 𝗶𝗻 𝗧𝗮𝗶𝗽𝗲𝗶. The G10-GaN offers an all-new compact design and overall lowest cost per wafer. “The G10-GaN builds on the excellent performance of today’s tool of record, AIXTRON’s AIX G5+ C, and takes it to the next level. This new system provides higher production yields, an unmatched uniformity performance, and the highest throughput of its class”, says 𝗡𝗶𝗰𝗼𝗹𝗮𝘀 𝗠𝘂𝗲𝘀𝗴𝗲𝗻𝘀, 𝗔𝗜𝗫𝗧𝗥𝗢𝗡’𝘀 𝗦𝗲𝗻𝗶𝗼𝗿 𝗣𝗿𝗼𝗱𝘂𝗰𝘁 𝗠𝗮𝗻𝗮𝗴𝗲𝗿 𝗳𝗼𝗿 𝗚𝗮𝗡. All of this is paired with a new compact cluster design which requires up to 50 percent less space per wafer capacity in the clean room. More details on the G10-GaN’s innovations and performance will be provided during the 𝗣𝗼𝘄𝗲𝗿 𝗘𝗹𝗲𝗰𝘁𝗿𝗼𝗻𝗶𝗰𝘀 𝘀𝗲𝘀𝘀𝗶𝗼𝗻 𝗮𝘁 𝗦𝗘𝗠𝗜𝗖𝗢𝗡 𝗧𝗮𝗶𝘄𝗮𝗻 𝗼𝗻 𝗦𝗲𝗽𝘁𝗲𝗺𝗯𝗲𝗿 𝟲𝘁𝗵, 𝟮𝟬𝟮𝟯. #galliumnitride #powerelectronics #SEMI #SEMICONTAIWAN2023 #InspireInnovation_EmpowerSustainability

Meet our experts Jim Jian and Elijah Bunin at the Battery Show and understand why GaN-on-Silicon will work in electrical drive train Inverter and outplacing SiC and its supply constraint. #sic #gan #thefutureiselectric #VisIC

GaN Systems' 11kW 800V on-board charger reference design helps deliver a 36% higher power density and up to 15% lower bill of materials costs compared to silicon carbide. Head to our YouTube channel to watch the full session of Stephen Coates speaking at SEMICON Taiwan 2023 Power and Opto Semiconductor Forum last month. Link below in the comments. #SEMICONTaiwan #GaN #powersystems

How to size a snubber capacitor for your power supply – Charged EVs Sponsored by Knowles Precision Devices. It’s becoming more common to see power supply circuits with wide-bandgap semiconductors rather than traditional silicon insulated-gate bipolar transistors (IGBTs). There are clear performance benefits to this switch, and with costs coming down, silicon carbide (SiC) and gallium nitride (GaN) semiconductors are more accessible than ever before. While the fundamental https://lnkd.in/dAkiUQYu

What are the products of the year 2024? This is the question that the team of the trade magazine Elektronik asks its readers every year and invites them to vote in 10 different categories.   In the category “Power” Mitsubishi Electric Europe - Semiconductor presents the 2nd generation SiC technology based semiconductor module in the established NX housing as a half-bridge module for the 1200V and 1700V classes, each with a rated current of 600A. The internal parasitic inductance has been reduced from 17nH to 9nH thanks to the laminar structure of the internal busbars.   Voting for the "Product of the Year 2024" in the "Power" category is open until the end of January. Submit your vote here: https://lnkd.in/dXwtCx8m Datasheets for the new 1200V/600A and 1700V/600A SiC MOSFET modules are already available on the Mitsubishi Electric website:   https://lnkd.in/eXdEVq47 https://lnkd.in/e4rPMaet #powerelectronics #sic #siliconcarbide

Having discussed some of the practical differences between SiC and GaN in our previous articles, we take a look at how each might fit into an EV onboard charger (OBC). 🚘⚡ The debate continues around choosing wide bandgap (WBG) semiconductors over standard silicon, particularly in power conversion applications. The main advantage put forward is the higher switching efficiency of gallium nitride (GaN) and silicon carbide (SiC) devices. The choice of GaN or SiC in EVs still depends on the detail of the application but both have benefits over silicon. https://lnkd.in/eUVNW4qz #GaN #SiC #WBG #EV #ElectricVehicles #Power #EngineersOfEvolution

"Global Glass Packaging Rectifier Diode Market Analysis and Growth Projections" Request Free Sample Report:https://shorturl.at/ghikJ The Glass Packaging Rectifier Diode market is experiencing significant growth as the demand for efficient and reliable electronic components continues to rise across various industries. Rectifier diodes with glass packaging are particularly sought after for their robustness and high-performance characteristics. These diodes play a crucial role in converting alternating current (AC) into direct current (DC) in a wide range of electronic devices and power supply applications. Vishay Intertechnology, Inc. Roehm Bourns, Inc. Toshiba Microchip #RectifierDiodes #GlassPackagingDiodes #ElectronicComponents #PowerElectronics #EnergyConversion

[PDF] Transparent Oxide Electronics: From Materials to Devices Pedro Barquinha, Rodrigo Martins, Luis Pereira, Elvira Fortunato(auth.) digsell https://lnkd.in/eNa782XW Content: Chapter 1 Introduction (pages 1–7): Chapter 2 N?Type Transparent Semiconducting Oxides (pages 9–61): Chapter 3 P?Type Transparent Conductors and Semiconductors (pages 63–100): Chapter 4 Gate Dielectrics in Oxide Electronics (pages 101–153): Chapter 5 The (R)evolution of Thin?Film Transistors (TFTs) (pages 155–209): Chapter 6 Electronics with and on Paper (pages 211–266): Chapter 7 A Glance at Current and Upcoming Applications (pages 267–286): https://lnkd.in/exmyZhVi