International Semiconductor Executive Summits

International Semiconductor Executive Summits

Semiconductor Manufacturing

London, England 11,564 followers

The World's Leading Semiconductor Manufacturing Platform

About us

Connecting Leaders in the Semiconductor Ecosystem... The 3 L's: We are the Leaders in gathering Leaders from the Leading Semiconductor Manufacturing Supply Chain...

Website
https://www.isesglobal.com
Industry
Semiconductor Manufacturing
Company size
2-10 employees
Headquarters
London, England
Type
Nonprofit
Founded
2014
Specialties
semiconductor

Locations

Employees at International Semiconductor Executive Summits

Updates

  • A heartfelt thank you to Stefan Obersriebnig, SVP High Voltage Modules at Infineon Technologies, for his insightful session at I.S.E.S. EU Power 2024! Session Title: EV Market Trends and the Status-Quo of Automotive Power Semiconductors Abstract: Stefan Obersriebnig delved into the key trends shaping the automotive power market, highlighting the current challenges faced by the industry. He discussed the pivotal role of semiconductor makers in overcoming these challenges, emphasizing the importance of innovation and collaboration. Stefan's presentation provided valuable insights into the evolving landscape of electric vehicles and the critical contributions of power semiconductors in driving this transformation. Thank you, Stefan, for your expertise and for guiding us through the future of automotive power semiconductors! #ISESEUPower2024

    • No alternative text description for this image
  • A big thank you to Ralf Keggenhoff, Global Director of Application Engineering, Semiconductor Business Unit at Littelfuse, for his insightful session at I.S.E.S. EU Power 2024! Session Title: Isolation - A Package Requirement Abstract: Ralf Keggenhoff explored the complexities of achieving higher power throughput in smaller housings while balancing efficiency and cost in power electronics. He highlighted the challenge of increased thermal stress due to higher currents, which can reduce the lifespan of devices. To address this, Ralf discussed the potential of using wide bandgap SiC-MOSFETs instead of silicon-based IGBTs, despite the higher cost. Additionally, he introduced an innovative approach focusing on direct liquid cooling for power semiconductors, circumventing the limitations of insulating substrates for thermal transfer. His presentation underscored the need for innovative solutions to optimize power electronics performance and longevity. Thank you, Ralf, for sharing your expertise and innovative approaches to enhancing power electronics! #ISESEUPower2024

    • No alternative text description for this image
  • A special thank you to Pavel Freundlich, Ph.D., Chief Technology Officer & Vice President, Power Solutions Group at onsemi, for his transformative session at I.S.E.S. EU Power 2024! Session Title: Transforming The Power World: The Wide-Bandgap Conversion Abstract: Pavel Freundlich discussed the evolution of power conversion technology, emphasizing the limitations of traditional silicon devices, which have been the backbone of power conversion for the past 70 years. As silicon reaches its physical limits, the power semiconductor industry is turning to wide bandgap materials and devices, which offer superior current densities, operating temperatures, frequencies, and switching efficiencies. Despite their advantages, wide bandgap power transistors present new challenges that require innovative approaches in crystal growth, wafering, epitaxy, wafer processing, and packaging. Pavel highlighted how vertically integrated manufacturing can address these challenges and accelerate the growth of the wide bandgap power semiconductor industry. He also touched on the co-existence of wide bandgap and silicon power switches. Thank you, Pavel, for your visionary insights and for leading the charge in the wide bandgap revolution! #ISESEUPower2024

    • No alternative text description for this image
  • A big thank you to Nuno Delgado, Electric Mobility Director at Efacec, for his insightful session at I.S.E.S. EU Power 2024! Session Title: EV Charging Infrastructure Challenges Abstract: Nuno Delgado discussed the rapid growth of EV charging infrastructure and its significant impact on the electrical grid. He highlighted the industry's new challenges, including managing the power requirements of vehicle charging and the increasing demand for higher power and efficiency. Nuno explored the framework and challenges of the future, focusing on leveraging grid flexibility to meet the power demands of vehicle charging. His insights provided a comprehensive overview of the complexities and solutions in the evolving landscape of EV charging infrastructure. Thank you, Nuno, for sharing your expertise and guiding us through the future of electric mobility! #ISESEUPower2024

    • No alternative text description for this image
  • A special thank you to Kees-Jan Leliveld, Managing Director at ASMPT ALSI, for his enlightening session at I.S.E.S. EU Power 2024! Session Title: SiC Wafer Dicing with Multi-Beam Laser: Optimal Process Quality and Minimized Cost Abstract: Kees Jan Leliveld highlighted the limitations of traditional blade sawing for power wafers, including issues like side wall cracks, passivation chipping, wafer cracks, metal peeling, and high consumable costs. As the industry moves towards thinner wafers, thicker backside metallization, and materials like SiC and GaN, these issues become more pronounced. Traditional solutions, such as reducing blade saw speed, are not sustainable due to increased equipment and fab space costs. Kees Jan presented ASMPT ALSI's innovative multi-beam laser dicing technology, which outperforms traditional blade sawing in both process quality and cost of ownership. He showcased several examples demonstrating the superior performance and efficiency of this advanced technology. Thank you, Kees Jan, for sharing your expertise and innovative solutions that are shaping the future of power wafer dicing! #ISESEUPower2024

    • No alternative text description for this image
  • A big thank you to Dr. Siegmar Schoser, Project Director of Cooperation and External Sourcing at Bosch, for his insightful session at I.S.E.S. EU Power 2024! Session Title: Raw Material Impact on the Transition to 200mm SiC Device Production Abstract: Dr. Schoser discussed the challenges and opportunities surrounding the transition to 200mm Silicon Carbide (SiC) device production. With the historical limitations in the availability of suitable SiC substrates, significant efforts have been made to secure sufficient raw materials for 150mm device manufacturing. As the industry shifts towards 200mm production, concerns about stable availability, maturity, pricing, geopolitical factors, and technological innovations are paramount. Dr. Schoser highlighted the varying focus of raw material suppliers on 200mm versus 150mm production and discussed the correlation between suppliers' efforts in 200mm crystal growth development and material quality. He also provided predictions on the raw material landscape for the next 3-5 years. Thank you, Dr. Schoser, for your comprehensive analysis and for shedding light on the future of SiC device production! #ISESEUPower2024

    • No alternative text description for this image
  • A heartfelt thank you to Dr. Dominic Dorfner, Senior Vice President of the Automotive Division at Semikron Danfoss, for his insightful session at I.S.E.S. EU Power 2024! Session Title: Advanced Packaging Essential for Full Utilization of SiC Semiconductors Abstract: Dr. Dorfner highlighted the critical role of advanced packaging in optimizing the performance of both Silicon (Si) and Silicon Carbide (SiC) chip technologies. He emphasized that to fully utilize the benefits of SiC, especially under average load conditions, packaging must be designed for peak loads. Dr. Dorfner showcased how Semikron Danfoss is at the forefront of developing advanced packaging technologies essential for high-performance power electronics. These innovations are key to scaling up electrification in both the industrial and automotive sectors, contributing to a sustainable and decarbonized future. Thank you Dr. Dorfner for your expertise and for driving the future of power electronics towards sustainability! #ISESEUPower2024

    • No alternative text description for this image
  • A big thank you to Dr. Ajay Poonjal Pai, Director of WBG Innovation & Application Engineering at Sanan Semiconductor, for his enlightening session at I.S.E.S. EU Power 2024! Session Title: Powering the SiC Revolution with Vertical Integration Abstract: Dr. Pai discussed the significant advantages of Silicon Carbide (SiC) as a power semiconductor material, highlighting its higher bandgap compared to Silicon, which enables unipolar power switches in the kilovolt range. This results in notable efficiency and power density benefits, driving mass adoption across various applications. Despite these advantages, challenges in mass adoption persist. Dr. Pai explained how Sanan Semiconductor is addressing these challenges through its vertically integrated SiC production process, encompassing everything from substrate to devices. Thank you, Dr. Pai, for sharing your expertise and Sanan Semiconductor's innovative solutions to propel the SiC revolution forward! #ISESEUPower2024

    • No alternative text description for this image
  • We would like to express our gratitude to Claire Troadec, Business Line Director at Yole Group, for her valuable session at I.S.E.S. EU Power 2024! Session Title: Power Electronics Market Expansion Abstract: Claire delved into the dynamic evolution of the power semiconductors market over the past decade. She highlighted the shift from Silicon to the rapidly rising SiC and GaN technologies, while also noting Silicon's continued relevance through the adoption of 300 mm Si MOSFET and IGBT platforms. With Yole Group projecting a market value of $33.3 billion for global discrete and power modules by 2028, Claire explored the significant growth of SiC, driven by innovations like the Tesla Model 3 and its application in 800V BEVs, especially in China. GaN's expansion from consumer segments to automotive applications was also discussed. Her presentation provided a thorough review of the latest market and technology trends in Power Electronics. Thank you, Claire, for your in-depth analysis and for guiding us through the future of power electronics! #ISESEUPower2024

    • No alternative text description for this image
  • A huge thank you to Bertrand Parvais, Principal Member of Technical Staff at imec, for his enlightening session at I.S.E.S. EU Power 2024! Session Title: GaN-on-Si Technology for Efficient RF Front-Ends Abstract: Bertrand addressed the crucial need for very high-power efficiency at mmWave frequencies, essential for the deployment of 5G and 6G radio systems. He introduced a breakthrough GaN-on-Si platform that achieves 68% PAE at 28GHz, highlighting its potential to significantly reduce power consumption in high-power amplifiers. Bertrand also discussed the reliability challenges and the optimization of transistors using different materials for the front- and back-barriers, paving the way for low-cost fabrication on a CMOS-compatible platform. Thank you, Bertrand, for sharing your expertise and advancing the future of RF front-end technology! #ISESEUPower2024

    • No alternative text description for this image

Affiliated pages

Similar pages

Browse jobs