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1 vote
1 answer
67 views

Limit of applicability of "quasistatic"/capacitive picture of devices

When analyzing the transitories associated with switching in semiconductor devices, in textbook treatments one often sees the time dependence considered by including (potentially nonlinear) capacitors ...
EE18's user avatar
  • 1,161
1 vote
1 answer
100 views

Confusion about why pn junction discussion insensitive to doping variations faster than Debye length

Sze (Physics of Semiconductor Devices, 3e) gives the following discussion which relates to how equilibrium electric fields/equilibrium potential build-up at thermal equilibrium are related to doping ...
EE18's user avatar
  • 1,161
3 votes
1 answer
270 views

What is equilibrium carrier concentration in a semiconductor? Is it material specific? How to calculate it?

Is equilibrium carrier concentration dependent on doping density? If it is, then how to know how much the doping density should be for a particular semiconductor device?
L1234's user avatar
  • 47
2 votes
2 answers
1k views

Why does the majority carrier concentration near the junction not decrease under forward bias? (PN junction)

We see that the current due to the majority carrier decreases near the junction as shown above, which means the majority carrier concentration should also decrease since the diffusion current is given ...
user207787's user avatar
0 votes
1 answer
800 views

Given a energy band diagram, can you always calculate potential, electric field, and charge distribution?

Given a band diagram, where do you start to get the electric field and charge distribution?
user207787's user avatar
1 vote
2 answers
7k views

Does doping always increase the conductivity of a semiconductor?

The conductivity of a semiconductor is given as (if extrinsic): \$\sigma = qnu_e + qpu_h\$ where \$\sigma\$ is the conductivity, \$u_e\$ and \$u_h\$ are the electron and hole mobilities. But does ...
Lewis's user avatar
  • 45
0 votes
3 answers
3k views

Electron concentration in an intrinsic semiconductor at room temperature

For a Si atom, band gap energy is around 1.1 eV which means that an electron in valence band needs at least this much energy to jump to conduction band. Also, at room temperature, typically energy of ...
Ankit Sahay's user avatar