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Tagged with electron solid-state-devices
3
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Does hole concentration fall below the intrinsic concentration, if Si is doped with pentavalent impurities?
If we increase N type doping in a pure Silicon then according to the equation
$$P_n=\frac{n_i^2}{N_D}\text.$$
Then mathematically, hole concentration is less than \$n_i\$, if \$N_D>n_i\$.
Why does ...
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Thermal generation of electron-hole couples and reverse biasing
I'm studying the PN junction and I have some problems figuring out thermal generation of couples electron-hole in reverse biasing.
The analysis is the standard one (for example, one can find it in the ...
- 121
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Electrons and Holes in a semiconductor
In an exercise I have an un-doped silicon I find that p=1.80e+11 ,n=6.60e+10 , should the numbers be more close to each other? (for example in GaAs I find 1.10e+14 and 1.60e+14)?? (also p number of ...
