3D X-DRAM is a 3D DRAM technology invented by Neo Semiconductor and revealed in May 2023. The concept has a 3D NAND-like DRAM cell array structure based on capacitor-less floating body cell (FBC) technology. This FBC technology stores data as electric charges using one transistor and zero capacitors. NEO says it can be manufactured using current 3D NAND-like processes and only needs one mask to define the bit line holes and form the cell structure inside the holes. This provides a high-speed, high-density, low-cost, and high-yield fabrication solution.
![](https://cdn.statically.io/img/blocksandfiles.com/wp-content/uploads/2023/05/3D-X-DRAM-diagram.jpg)
![](https://cdn.statically.io/img/blocksandfiles.com/wp-content/uploads/2023/05/NEO-FBC-Technology-graphic.jpg)
NEO suggests 3D X-DRAM could scale past a 1Tb chip in the 2030-2035 period:
![](https://cdn.statically.io/img/blocksandfiles.com/wp-content/uploads/2023/05/NEO-3D-XDRAM-scaling-chart.jpg)