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Fracture and size effect in mechanical metamaterials
Authors:
J. Ulloa,
M. P. Ariza,
J. E. Andrade,
M. Ortiz
Abstract:
We resort to variational methods to evaluate the asymptotic behavior of fine metamaterials as a function of cell size. To zeroth order, the metamaterial behaves as a micropolar continuum with both displacement and rotation degrees of freedom, but exhibits linear-elastic fracture mechanics scaling and therefore no size effect. To higher order, the overall energetics of the metastructure can be char…
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We resort to variational methods to evaluate the asymptotic behavior of fine metamaterials as a function of cell size. To zeroth order, the metamaterial behaves as a micropolar continuum with both displacement and rotation degrees of freedom, but exhibits linear-elastic fracture mechanics scaling and therefore no size effect. To higher order, the overall energetics of the metastructure can be characterized explicitly in terms of the solution of the zeroth-order continuum problem by the method of Γ-expansion. We present explicit expressions of the second-order correction for octet frames. As an application, we evaluate the compliance of double-cantilever octet specimens to second order and use the result to elucidate the dependence of the apparent toughness of the specimen on cell size. The analysis predicts the discreteness of the metamaterial lattice to effectively shield the crack-tip, a mechanism that we term lattice shielding. The theory specifically predicts anti-shielding, i. e., coarser is weaker, in agreement with recent experimental observations.
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Submitted 26 June, 2024;
originally announced July 2024.
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Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells
Authors:
Urs Aeberhard,
Alicia Gonzalo,
Jose María Ulloa
Abstract:
Photocarrier transport and extraction in GaAsSb/GaAsN type-II quantum well superlattices are investigated by means of inelastic quantum transport calculations based on the non-equilibrium Green's function formalism. Evaluation of the local density of states and of the spectral current flow enables the identification of different regimes for carrier localization, transport, and extraction as a func…
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Photocarrier transport and extraction in GaAsSb/GaAsN type-II quantum well superlattices are investigated by means of inelastic quantum transport calculations based on the non-equilibrium Green's function formalism. Evaluation of the local density of states and of the spectral current flow enables the identification of different regimes for carrier localization, transport, and extraction as a function of configurational parameters. These include the number of periods, the thicknesses of the individual layers in one period, the built-in electric field, and the temperature of operation. The results for the carrier extraction efficiency are related to experimental data for different symmetric GaAsSb/GaAsN type-II quantum well superlattice solar cell devices and provide a qualitative explanation for the experimentally observed dependence of photovoltaic device performance on period thickness.
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Submitted 9 May, 2018;
originally announced May 2018.
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Intersubband polarons in oxides
Authors:
M. Montes Bajo,
J. Tamayo-Arriola,
M. Hugues,
J. M. Ulloa,
N. Le Biavan,
R. Peretti,
F. H. Julien,
J. Faist,
J. M. Chauveau,
A. Hierro
Abstract:
Intersubband (ISB) polarons result from the interaction of an ISB transition and the longitudinal optical (LO) phonons in a semiconductor quantum well (QW). Their observation requires a very dense two dimensional electron gas (2DEG) in the QW and a polar or highly ionic semiconductor. Here we show that in ZnO/MgZnO QWs the strength of such a coupling can be as high as 1.5 times the LO-phonon frequ…
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Intersubband (ISB) polarons result from the interaction of an ISB transition and the longitudinal optical (LO) phonons in a semiconductor quantum well (QW). Their observation requires a very dense two dimensional electron gas (2DEG) in the QW and a polar or highly ionic semiconductor. Here we show that in ZnO/MgZnO QWs the strength of such a coupling can be as high as 1.5 times the LO-phonon frequency due to the very dense 2DEG achieved and the large difference between the static and high-frequency dielectric constants in ZnO. The ISB polaron is observed optically in multiple QW structures with 2DEG densities ranging from $5\times 10^{12}$ to $5\times 10^{13}$ cm$^{-2}$, where an unprecedented regime is reached in which the frequency of the upper ISB polaron branch is three times larger than that of the bare ISB transition. This study opens new prospects to the exploitation of oxides in phenomena happening in the ultrastrong coupling regime.
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Submitted 22 March, 2017;
originally announced March 2017.
