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Time-Dependent Density Functional Theory Simulation for Analyzing Neutralization Process of Hydrogen Ion Injected onto Tungsten Surfaces
Authors:
Yuto Toda,
Arimichi Takayama,
Atsushi M. Ito
Abstract:
We have performed time-dependent density functional theory simulations for the neutralization process of a hydrogen ion injected at 100eV onto the (110) surface of tungsten material. We have also proposed a method for evaluating the detection probability of electrons in a small region. This probability is interpreted as that of detecting hydrogen in each state: positive ion, neutral atom, and nega…
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We have performed time-dependent density functional theory simulations for the neutralization process of a hydrogen ion injected at 100eV onto the (110) surface of tungsten material. We have also proposed a method for evaluating the detection probability of electrons in a small region. This probability is interpreted as that of detecting hydrogen in each state: positive ion, neutral atom, and negative ion. As a result, the probabilities of detecting hydrogen after a collision as a positive ion, neutral atom, and negative ion were approximately 30 percent, 50 percent, and 20 percent, respectively.
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Submitted 3 July, 2024;
originally announced July 2024.
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Quantum Electron Dynamics in Helium Ion Injection onto Tungsten Surfaces by Time-Dependent Density Functional Theory
Authors:
Atsushi M. Ito,
Yuto Toda,
Arimichi Takayama
Abstract:
The neutralization process of an ion particle on a surface is key issue of the plasma-wall interaction (PWI). We investigated helium (He) ion injection onto a tungsten surface using time-dependent density functional theory (TDDFT) simulation. We developed the TDDFT code QUMASUN for this study, simulating the process of electron transfer from the surface to the He nucleus by solving the time evolut…
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The neutralization process of an ion particle on a surface is key issue of the plasma-wall interaction (PWI). We investigated helium (He) ion injection onto a tungsten surface using time-dependent density functional theory (TDDFT) simulation. We developed the TDDFT code QUMASUN for this study, simulating the process of electron transfer from the surface to the He nucleus by solving the time evolution of electron wave function and the classical motion of nuclei simultaneously. Our results show that the probabilities of injected $\text{He}^{2+}$ changing into $\text{He}^{1+}$ and $\text{He}^{0}$ on the surface are approximately 40 percent and 13 percent, respectively. The captured electrons by $\text{He}^{1+}$ and $\text{He}^{0}$ predominantly occupy the 2s and 2p orbitals, corresponding to excited states. In addition, we stated some challenges for applying TDDFT to plasma-wall interactions.
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Submitted 2 July, 2024;
originally announced July 2024.
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Analysis of the Pancharatnam-Berry phase of vector vortex states using the Hamiltonian based on the Maxwell-Schrödinger equation
Authors:
Masato Suzuki,
Keisaku Yamane,
Kazuhiko Oka,
Yasunori Toda,
Ryuji Morita
Abstract:
We derived the Berry connection of vector vortex states (VVSs) from the "true" Hamiltonian obtained through the Maxwell--Schrödinger equation for an inhomogeneous anisotropic (IA) medium, and we experimentally demonstrated measurement of the corresponding Pancharatnam--Berry (PB) geometrical phase of VVSs. The PB phase (PBP) of VVSs can be divided into two phases: homogeneous and inhomogeneous PBP…
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We derived the Berry connection of vector vortex states (VVSs) from the "true" Hamiltonian obtained through the Maxwell--Schrödinger equation for an inhomogeneous anisotropic (IA) medium, and we experimentally demonstrated measurement of the corresponding Pancharatnam--Berry (PB) geometrical phase of VVSs. The PB phase (PBP) of VVSs can be divided into two phases: homogeneous and inhomogeneous PBPs. Homogeneous and inhomogeneous PBPs are related to the conventional PBP and the spatially-dependent geometric phase given by an IA medium such as a polarization converter, respectively. We theoretically detected that inhomogeneous PBP accumulation originates from the gauge dependence of the index of the hybrid-order Poincaré sphere, which provides an alternate method for understanding optical spin--orbital angular momentum conversion. The homogeneous PBP, which is explicitly observed for the first time, has implications for quantum state manipulation and information processing.
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Submitted 8 February, 2016;
originally announced February 2016.
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Comment on "Higher Order Pancharatnam-Berry Phase and the Angular Momentum of Light"
Authors:
Masato Suzuki,
Keisaku Yamane,
Kazuhiko Oka,
Yasunori Toda,
Ryuji Morita
Abstract:
In a recent letter, Milione et al. reported the Pancharatnam-Berry phase (PBP) on a higher-order Poincaré sphere (HOPS) [Phys. Rev. Lett, 108, 190401 (2012)]. They used two spin-orbit converters (SOCs) to make a trajectory along the HOPS. However, the SOCs actually do not make a path on the HOPS. We briefly discuss a way of acquiring a PBP made by SOCs.
In a recent letter, Milione et al. reported the Pancharatnam-Berry phase (PBP) on a higher-order Poincaré sphere (HOPS) [Phys. Rev. Lett, 108, 190401 (2012)]. They used two spin-orbit converters (SOCs) to make a trajectory along the HOPS. However, the SOCs actually do not make a path on the HOPS. We briefly discuss a way of acquiring a PBP made by SOCs.
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Submitted 8 February, 2016;
originally announced February 2016.
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Narrow Bandgap in beta-BaZn2As2 and Its Chemical Origins
Authors:
Zewen Xiao,
Hidenori Hiramatsu,
Shigenori Ueda,
Yoshitake Toda,
Fan-Yong Ran,
Jiangang Guo,
Hechang Lei,
Satoru Matsuishi,
Hideo Hosono,
Toshio Kamiya
Abstract:
Beta-BaZn2As2 is known to be a p-type semiconductor with the layered crystal structure similar to that of LaZnAsO, leading to the expectation that beta-BaZn2As2 and LaZnAsO have similar bandgaps; however, the bandgap of beta-BaZn2As2 (previously-reported value ~0.2 eV) is one order of magnitude smaller than that of LaZnAsO (1.5 eV). In this paper, the reliable bandgap value of beta-BaZn2As2 is det…
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Beta-BaZn2As2 is known to be a p-type semiconductor with the layered crystal structure similar to that of LaZnAsO, leading to the expectation that beta-BaZn2As2 and LaZnAsO have similar bandgaps; however, the bandgap of beta-BaZn2As2 (previously-reported value ~0.2 eV) is one order of magnitude smaller than that of LaZnAsO (1.5 eV). In this paper, the reliable bandgap value of beta-BaZn2As2 is determined to be 0.23 eV from the intrinsic region of the tem-perature dependence of electrical conductivity. The origins of this narrow bandgap are discussed based on the chemi-cal bonding nature probed by 6 keV hard X-ray photoemission spectroscopy, hybrid density functional calculations, and the ligand theory. One origin is the direct As-As hybridization between adjacent [ZnAs] layers, which leads to a secondary splitting of As 4p levels and raises the valence band maximum. The other is that the non-bonding Ba 5dx2-y2 orbitals form unexpectedly deep conduction band minimum (CBM) in beta-BaZn2As2 although the CBM of LaZnAsO is formed mainly of Zn 4s. These two origins provide a quantitative explanation for the bandgap difference between beta-BaZn2As2 and LaZnAsO.
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Submitted 11 February, 2015;
originally announced February 2015.
