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Nonexistence of Integrable Nonlinear Magnetic Fields with Invariants Quadratic in Momenta
Authors:
Bela Erdelyi,
Kevin Hamilton,
Jacob Pratscher,
Marie Swartz
Abstract:
Nonlinear, completely integrable Hamiltonian systems that serve as blueprints for novel particle accelerators at the intensity frontier are promising avenues for research, as Fermilab's Integrable Optics Test Accelerator (IOTA) example clearly illustrates. Here, we show that only very limited generalizations are possible when no approximations in the underlying Hamiltonian or Maxwell equations are…
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Nonlinear, completely integrable Hamiltonian systems that serve as blueprints for novel particle accelerators at the intensity frontier are promising avenues for research, as Fermilab's Integrable Optics Test Accelerator (IOTA) example clearly illustrates. Here, we show that only very limited generalizations are possible when no approximations in the underlying Hamiltonian or Maxwell equations are allowed, as was the case for IOTA. Specifically, no such systems exist with invariants quadratic in the momenta, precluding straightforward generalization of the Courant-Snyder theory of linear integrable systems in beam physics. We also conjecture that no such systems exist with invariants of higher degree in the momenta. This leaves solenoidal magnetic fields, including their nonlinear fringe fields, as the only completely integrable static magnetic fields, albeit with invariants that are linear in the momenta. The difficulties come from enforcing Maxwell equations; without constraints, we show that there are many solutions. In particular, we discover a previously unknown large family of integrable Hamiltonians.
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Submitted 4 July, 2024;
originally announced July 2024.
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Smart Pixels: In-pixel AI for on-sensor data filtering
Authors:
Benjamin Parpillon,
Chinar Syal,
Jieun Yoo,
Jennet Dickinson,
Morris Swartz,
Giuseppe Di Guglielmo,
Alice Bean,
Douglas Berry,
Manuel Blanco Valentin,
Karri DiPetrillo,
Anthony Badea,
Lindsey Gray,
Petar Maksimovic,
Corrinne Mills,
Mark S. Neubauer,
Gauri Pradhan,
Nhan Tran,
Dahai Wen,
Farah Fahim
Abstract:
We present a smart pixel prototype readout integrated circuit (ROIC) designed in CMOS 28 nm bulk process, with in-pixel implementation of an artificial intelligence (AI) / machine learning (ML) based data filtering algorithm designed as proof-of-principle for a Phase III upgrade at the Large Hadron Collider (LHC) pixel detector. The first version of the ROIC consists of two matrices of 256 smart p…
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We present a smart pixel prototype readout integrated circuit (ROIC) designed in CMOS 28 nm bulk process, with in-pixel implementation of an artificial intelligence (AI) / machine learning (ML) based data filtering algorithm designed as proof-of-principle for a Phase III upgrade at the Large Hadron Collider (LHC) pixel detector. The first version of the ROIC consists of two matrices of 256 smart pixels, each 25$\times$25 $μ$m$^2$ in size. Each pixel consists of a charge-sensitive preamplifier with leakage current compensation and three auto-zero comparators for a 2-bit flash-type ADC. The frontend is capable of synchronously digitizing the sensor charge within 25 ns. Measurement results show an equivalent noise charge (ENC) of $\sim$30e$^-$ and a total dispersion of $\sim$100e$^-$ The second version of the ROIC uses a fully connected two-layer neural network (NN) to process information from a cluster of 256 pixels to determine if the pattern corresponds to highly desirable high-momentum particle tracks for selection and readout. The digital NN is embedded in-between analog signal processing regions of the 256 pixels without increasing the pixel size and is implemented as fully combinatorial digital logic to minimize power consumption and eliminate clock distribution, and is active only in the presence of an input signal. The total power consumption of the neural network is $\sim$ 300 $μ$W. The NN performs momentum classification based on the generated cluster patterns and even with a modest momentum threshold, it is capable of 54.4\% - 75.4\% total data rejection, opening the possibility of using the pixel information at 40MHz for the trigger. The total power consumption of analog and digital functions per pixel is $\sim$ 6 $μ$W per pixel, which corresponds to $\sim$ 1 W/cm$^2$ staying within the experimental constraints.
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Submitted 21 June, 2024;
originally announced June 2024.
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Smart pixel sensors: towards on-sensor filtering of pixel clusters with deep learning
Authors:
Jieun Yoo,
Jennet Dickinson,
Morris Swartz,
Giuseppe Di Guglielmo,
Alice Bean,
Douglas Berry,
Manuel Blanco Valentin,
Karri DiPetrillo,
Farah Fahim,
Lindsey Gray,
James Hirschauer,
Shruti R. Kulkarni,
Ron Lipton,
Petar Maksimovic,
Corrinne Mills,
Mark S. Neubauer,
Benjamin Parpillon,
Gauri Pradhan,
Chinar Syal,
Nhan Tran,
Dahai Wen,
Aaron Young
Abstract:
Highly granular pixel detectors allow for increasingly precise measurements of charged particle tracks. Next-generation detectors require that pixel sizes will be further reduced, leading to unprecedented data rates exceeding those foreseen at the High Luminosity Large Hadron Collider. Signal processing that handles data incoming at a rate of O(40MHz) and intelligently reduces the data within the…
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Highly granular pixel detectors allow for increasingly precise measurements of charged particle tracks. Next-generation detectors require that pixel sizes will be further reduced, leading to unprecedented data rates exceeding those foreseen at the High Luminosity Large Hadron Collider. Signal processing that handles data incoming at a rate of O(40MHz) and intelligently reduces the data within the pixelated region of the detector at rate will enhance physics performance at high luminosity and enable physics analyses that are not currently possible. Using the shape of charge clusters deposited in an array of small pixels, the physical properties of the traversing particle can be extracted with locally customized neural networks. In this first demonstration, we present a neural network that can be embedded into the on-sensor readout and filter out hits from low momentum tracks, reducing the detector's data volume by 54.4-75.4%. The network is designed and simulated as a custom readout integrated circuit with 28 nm CMOS technology and is expected to operate at less than 300 $μW$ with an area of less than 0.2 mm$^2$. The temporal development of charge clusters is investigated to demonstrate possible future performance gains, and there is also a discussion of future algorithmic and technological improvements that could enhance efficiency, data reduction, and power per area.
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Submitted 3 October, 2023;
originally announced October 2023.
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Simulated performance and calibration of CMS Phase-2 Upgrade Inner Tracker sensors
Authors:
Tamas Almos Vami,
Morris Swartz
Abstract:
The next upgrade of the Large Hadron Collider (LHC) is planned from 2026 when the collider will move to its High Luminosity phase (HL-LHC). The CMS detector needs to be substantially upgraded during this period to exploit the fourfold increase in luminosity provided by the HL-LHC. This upgrade is referred to as the CMS Phase-2 Upgrade. A program of laboratory and beam test measurements, and perfor…
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The next upgrade of the Large Hadron Collider (LHC) is planned from 2026 when the collider will move to its High Luminosity phase (HL-LHC). The CMS detector needs to be substantially upgraded during this period to exploit the fourfold increase in luminosity provided by the HL-LHC. This upgrade is referred to as the CMS Phase-2 Upgrade. A program of laboratory and beam test measurements, and performance studies based on the detailed simulation of the detector was carried out to support the decision of the technology of the sensors to be adopted in the different regions of the detector for the Phase-2 Upgrade. Among the various options considered, CMS chose to use 3D sensors with a 25 $\times$ 100 $μ$m$^2$ pixel cell in the innermost layer of the barrel and planar sensors with a 25 $\times$ 100 $μ$m$^2$ pixel cell elsewhere. In this paper, we detail the simulation studies that were carried out to choose the best sensor design. These studies include a detailed standalone simulation of the sensors made with PixelAV and the expected performance on high level observables obtained with the simulation and reconstruction software of the CMS experiment.
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Submitted 31 January, 2023;
originally announced January 2023.
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Mathematical Modeling of Business Reopening when Facing SARS-CoV-2 Pandemic: Protection, Cost and Risk
Authors:
Hongyu Miao,
Qianmiao Gao,
Han Feng,
Chengxue Zhong,
Pengwei Zhu,
Liang Wu,
Michael D. Swartz,
Xi Luo,
Stacia M. DeSantis,
Dejian Lai,
Cici Bauer,
Adriana Pérez,
Libin Rong,
David Lairson
Abstract:
The sudden onset of the coronavirus (SARS-CoV-2) pandemic has resulted in tremendous loss of human life and economy in more than 210 countries and territories around the world. While self-protections such as wearing mask, sheltering in place and quarantine polices and strategies are necessary for containing virus transmission, tens of millions people in the U.S. have lost their jobs due to the shu…
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The sudden onset of the coronavirus (SARS-CoV-2) pandemic has resulted in tremendous loss of human life and economy in more than 210 countries and territories around the world. While self-protections such as wearing mask, sheltering in place and quarantine polices and strategies are necessary for containing virus transmission, tens of millions people in the U.S. have lost their jobs due to the shutdown of businesses. Therefore, how to reopen the economy safely while the virus is still circulating in population has become a problem of significant concern and importance to elected leaders and business executives. In this study, mathematical modeling is employed to quantify the profit generation and the infection risk simultaneously from the point of view of a business entity. Specifically, an ordinary differential equation model was developed to characterize disease transmission and infection risk. An algebraic equation is proposed to determine the net profit that a business entity can generate after reopening and take into account the costs associated of several protection/quarantine guidelines. All model parameters were calibrated based on various data and information sources. Sensitivity analyses and case studies were performed to illustrate the use of the model in practice.
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Submitted 12 June, 2020; v1 submitted 23 May, 2020;
originally announced June 2020.
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Test Beam Performance Measurements for the Phase I Upgrade of the CMS Pixel Detector
Authors:
M. Dragicevic,
M. Friedl,
J. Hrubec,
H. Steininger,
A. Gädda,
J. Härkönen,
T. Lampén,
P. Luukka,
T. Peltola,
E. Tuominen,
E. Tuovinen,
A. Winkler,
P. Eerola,
T. Tuuva,
G. Baulieu,
G. Boudoul,
L. Caponetto,
C. Combaret,
D. Contardo,
T. Dupasquier,
G. Gallbit,
N. Lumb,
L. Mirabito,
S. Perries,
M. Vander Donckt
, et al. (462 additional authors not shown)
Abstract:
A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator…
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A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator thresholds. In this paper, comprehensive test beam studies are presented, which have been conducted to verify the design and to quantify the performance of the new detector assemblies in terms of tracking efficiency and spatial resolution. Under optimal conditions, the tracking efficiency is $99.95\pm0.05\,\%$, while the intrinsic spatial resolutions are $4.80\pm0.25\,μ\mathrm{m}$ and $7.99\pm0.21\,μ\mathrm{m}$ along the $100\,μ\mathrm{m}$ and $150\,μ\mathrm{m}$ pixel pitch, respectively. The findings are compared to a detailed Monte Carlo simulation of the pixel detector and good agreement is found.
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Submitted 1 June, 2017;
originally announced June 2017.
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Trapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker
Authors:
W. Adam,
T. Bergauer,
M. Dragicevic,
M. Friedl,
R. Fruehwirth,
M. Hoch,
J. Hrubec,
M. Krammer,
W. Treberspurg,
W. Waltenberger,
S. Alderweireldt,
W. Beaumont,
X. Janssen,
S. Luyckx,
P. Van Mechelen,
N. Van Remortel,
A. Van Spilbeeck,
P. Barria,
C. Caillol,
B. Clerbaux,
G. De Lentdecker,
D. Dobur,
L. Favart,
A. Grebenyuk,
Th. Lenzi
, et al. (663 additional authors not shown)
Abstract:
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determi…
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The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trapping rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.
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Submitted 7 May, 2015;
originally announced May 2015.
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Design and performance of the silicon sensors for the CMS barrel pixel detector
Authors:
Y. Allkofer,
C. Amsler,
D. Bortoletto,
V. Chiochia,
L. Cremaldi,
S. Cucciarelli,
A. Dorokhov,
C. Hoermann,
R. Horisberger,
D. Kim,
M. Konecki,
D. Kotlinski,
K. Prokofiev,
C. Regenfus,
T. Rohe,
D. A. Sanders,
S. Son,
M. Swartz,
T. Speer
Abstract:
The CMS experiment at the LHC includes a hybrid silicon pixel detector for the reconstruction of charged tracks and of the interaction vertices. The barrel region consists of n-in-n sensors with 100X150 um^2 cell size processed on diffusion oxygenated float zone silicon. A biasing grid is implemented and pixel isolation is achieved with the moderated p-spray technique. An extensive test program…
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The CMS experiment at the LHC includes a hybrid silicon pixel detector for the reconstruction of charged tracks and of the interaction vertices. The barrel region consists of n-in-n sensors with 100X150 um^2 cell size processed on diffusion oxygenated float zone silicon. A biasing grid is implemented and pixel isolation is achieved with the moderated p-spray technique. An extensive test program was carried out on the H2 beam line of the CERN SPS. In this paper we describe the sensor layout, the beam test setup and the results obtained with both irradiated and non-irradiated prototype devices. Measurements of charge collection, hit detection efficiency, Lorentz angle and spatial resolution are presented.
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Submitted 12 February, 2007;
originally announced February 2007.
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Simulation of Heavily Irradiated Silicon Pixel Detectors
Authors:
M. Swartz,
V. Chiochia,
Y. Allkofer,
C. Amsler,
D. Bortoletto,
L. Cremaldi,
S. Cucciarelli,
A. Dorokhov,
C. Hoermann,
D. Kim,
M. Konecki,
D. Kotlinski,
K. Prokofiev,
C. Regenfus,
T. Rohe,
D. A. Sanders,
S. Son,
T. Speer
Abstract:
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14}…
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We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon. The model is now being used to calibrate pixel hit reconstruction algorithms for CMS.
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Submitted 24 May, 2006;
originally announced May 2006.
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Sensor Simulation and position calibration for the CMS pixel detector
Authors:
V. Chiochia,
E. Alagoz,
M. Swartz
Abstract:
In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on charge sharing and position determination. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. We show that charge sharing functions extracted from the simulation can be parameteriz…
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In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on charge sharing and position determination. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. We show that charge sharing functions extracted from the simulation can be parameterized as a function of the inter-pixel position and used to improve the position determination. For sensors irradiated to Phi=5.9x10^14 n/cm^2 a position resolution below 15 um can be achieved after calibration.
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Submitted 23 March, 2006;
originally announced March 2006.
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Simulation and hit reconstruction of irradiated pixel sensors for the CMS experiment
Authors:
E. Alagoz,
V. Chiochia,
M. Swartz
Abstract:
In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on the position determination and optimize the hit reconstruction algorithms. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The simulation shows that a position resolution below…
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In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on the position determination and optimize the hit reconstruction algorithms. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The simulation shows that a position resolution below 15 $μ$m along the CMS $r-φ$ plane can be achieved after an irradiation fluence of $5.9\times10^{14}$ n$_{\rm{eq}}/$cm$^2$. In addition, we show that systematic errors in the position determination can be largely reduced by applying $η$ corrections.
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Submitted 5 December, 2005;
originally announced December 2005.
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Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors
Authors:
M. Swartz,
V. Chiochia,
Y. Allkofer,
D. Bortoletto,
L. Cremaldi,
S. Cucciarelli,
A. Dorokhov,
C. Hoermann,
D. Kim,
M. Konecki,
D. Kotlinski,
K. Prokofiev,
C. Regenfus,
T. Rohe,
D. A. Sanders,
S. Son,
T. Speer
Abstract:
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14}…
▽ More
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon.
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Submitted 5 January, 2006; v1 submitted 5 October, 2005;
originally announced October 2005.
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A double junction model of irradiated silicon pixel sensors for LHC
Authors:
V. Chiochia,
M. Swartz,
Y. Allkofer,
D. Bortoletto,
L. Cremaldi,
S. Cucciarelli,
A. Dorokhov,
C. Hoermann,
D. Kim,
M. Konecki,
D. Kotlinski,
K. Prokofiev,
C. Regenfus,
T. Rohe,
D. A. Sanders,
S. Son,
M. Swartz,
T. Speer
Abstract:
In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to…
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In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to describe the data and excludes a description based on acceptor defects uniformly distributed across the sensor bulk. In addition, the dependence of trap concentrations upon fluence is established by comparing the measured and simulated profiles at several fluences and bias voltages.
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Submitted 30 June, 2005;
originally announced June 2005.
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Extraction of electric field in heavily irradiated silicon pixel sensors
Authors:
A. Dorokhov,
Y. Allkofer,
C. Amsler,
D. Bortoletto,
V. Chiochia,
L. Cremaldi,
S. Cucciarelli,
C. Hoermann,
D. Kim,
M. Konecki,
D. Kotlinski,
K. Prokofiev,
C. Regenfus,
T. Rohe,
D. Sanders,
S. Son,
T. Speer,
M. Swartz
Abstract:
A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to…
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A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 1E15 neq/cm2 sensors.
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Submitted 25 June, 2005; v1 submitted 6 December, 2004;
originally announced December 2004.
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Fluence Dependence of Charge Collection of irradiated Pixel Sensors
Authors:
T. Rohe,
D. Bortoletto,
V. Chiochia,
L. M. Cremaldi,
S. Cucciarelli,
A. Dorokhov,
C. Hoermann,
D. Kim,
M. Konecki,
D. Kotlinski,
K. Prokofiev,
C. Regenfus,
D. A. Sanders,
S. Son,
T. Speer,
M. Swartz
Abstract:
The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feature a bias grid. The latter leads to a small fraction of the pixel area to be less sensitive to particles. In order to quantify this inefficiency prototype pixel sensors irradiated to particle fluences between…
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The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feature a bias grid. The latter leads to a small fraction of the pixel area to be less sensitive to particles. In order to quantify this inefficiency prototype pixel sensors irradiated to particle fluences between $4.7\times 10^{13}$ and $2.6\times 10^{15} \Neq$ have been bump bonded to un-irradiated readout chips and tested using high energy pions at the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed analogue readout and is therefore well suited to measure the charge collection properties of the sensors.
In this paper we discuss the fluence dependence of the collected signal and the particle detection efficiency. Further the position dependence of the efficiency is investigated.
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Submitted 4 January, 2005; v1 submitted 23 November, 2004;
originally announced November 2004.
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Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements
Authors:
Vincenzo Chiochia,
Morris Swartz,
Daniela Bortoletto,
Lucien Cremaldi,
Susanna Cucciarelli,
Andrei Dorokhov,
Christoph Hoermann,
Dongwook Kim,
Marcin Konecki,
Danek Kotlinski,
Kirill Prokofiev,
Christian Regenfus,
Tilman Rohe,
David A. Sanders,
Seunghee Son,
Thomas Speer
Abstract:
Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standar…
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Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trapping observed in the data.
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Submitted 4 May, 2005; v1 submitted 16 November, 2004;
originally announced November 2004.
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Type inversion in irradiated silicon: a half truth
Authors:
M. Swartz,
D. Bortoletto,
V. Chiochia,
L. Cremaldi,
S. Cucciarelli,
A. Dorokhov,
M. Konecki,
K. Prokofiev,
C. Regenfus,
T. Rohe,
D. A. Sanders,
S. Son,
T. Speer
Abstract:
Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standar…
▽ More
Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well at two different fluences. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of signal trapping observed in the data.
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Submitted 13 September, 2004; v1 submitted 9 September, 2004;
originally announced September 2004.
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Position Dependence of Charge Collection in Prototype Sensors for the CMS Pixel Detector
Authors:
T. Rohe,
D. Bortoletto,
V. Chiochia,
L. M. Cremaldi,
S. Cucciarelli,
A. Dorokhov,
M. Konecki,
K. Prokofiev,
C. Regenfus,
D. A. Sanders,
S. Son,
T. Speer,
M. Swartz
Abstract:
This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluencec of 1E15 n_eq/cm**2 at the CERN PS. Afterward they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed full ana…
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This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluencec of 1E15 n_eq/cm**2 at the CERN PS. Afterward they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The position dependence of signal is presented and the differences between the two sensor options are discussed.
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Submitted 31 August, 2004; v1 submitted 2 December, 2003;
originally announced December 2003.
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Tests of silicon sensors for the CMS pixel detector
Authors:
A. Dorokhov,
C. Amsler,
D. Bortoletto,
V. Chiochia,
L. Cremaldi,
S. Cucciarelli,
M. Konecki,
K. Prokofiev,
C. Regenfus,
T. Rohe,
D. Sanders,
S. Son,
T. Speer,
M. Swartz
Abstract:
The tracking system of the CMS experiment, currently under construction at the Large Hadron Collider (LHC) at CERN (Geneva, Switzerland), will include a silicon pixel detector providing three spacial measurements in its final configuration for tracks produced in high energy pp collisions. In this paper we present the results of test beam measurements performed at CERN on irradiated silicon pixel…
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The tracking system of the CMS experiment, currently under construction at the Large Hadron Collider (LHC) at CERN (Geneva, Switzerland), will include a silicon pixel detector providing three spacial measurements in its final configuration for tracks produced in high energy pp collisions. In this paper we present the results of test beam measurements performed at CERN on irradiated silicon pixel sensors. Lorentz angle and charge collection efficiency were measured for two sensor designs and at various bias voltages.
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Submitted 11 November, 2003;
originally announced November 2003.
