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Sub-millisecond electric field sensing with an individual rare-earth doped ferroelectric nanocrystal
Authors:
Athulya Muraleedharan,
Jingye Zou,
Maxime Vallet,
Abdelali Zaki,
Christine Bogicevic,
Charles Paillard,
Karen Perronet,
François Treussart
Abstract:
Understanding the dynamics of electrical signals within neuronal assemblies is crucial to unraveling complex brain function. Despite recent advances in employing optically active nanostructures in transmembrane potential sensing, there remains room for improvement in terms of response time and sensitivity. Here, we report the development of such a nanosensor capable of detecting electric fields wi…
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Understanding the dynamics of electrical signals within neuronal assemblies is crucial to unraveling complex brain function. Despite recent advances in employing optically active nanostructures in transmembrane potential sensing, there remains room for improvement in terms of response time and sensitivity. Here, we report the development of such a nanosensor capable of detecting electric fields with a submillisecond response time at the single particle level. We achieve this by using ferroelectric nanocrystals doped with rare earth ions producing upconversion (UC). When such a nanocrystal experiences a variation of surrounding electric potential, its surface charge density changes, inducing electric polarization modifications that vary, via converse piezoelectric effect, the crystal field around the ions. The latter variation is finally converted into UC spectral changes, enabling optical detection of electric potential. To develop such a sensor, we synthesized erbium and ytterbium-doped barium titanate crystals of size $\approx160$ nm. We observed distinct changes in the UC spectrum when individual nanocrystals were subjected to an external field via a conductive AFM tip, with a response time of 100 $μ$s. Furthermore, our sensor exhibits a sensitivity to electric fields of only 4.8 kV/cm/$\sqrt{\rm Hz}$, making possible the time-resolved detection of a neuron action potential.
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Submitted 2 July, 2024;
originally announced July 2024.
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The ABC130 barrel module prototyping programme for the ATLAS strip tracker
Authors:
Luise Poley,
Craig Sawyer,
Sagar Addepalli,
Anthony Affolder,
Bruno Allongue,
Phil Allport,
Eric Anderssen,
Francis Anghinolfi,
Jean-François Arguin,
Jan-Hendrik Arling,
Olivier Arnaez,
Nedaa Alexandra Asbah,
Joe Ashby,
Eleni Myrto Asimakopoulou,
Naim Bora Atlay,
Ludwig Bartsch,
Matthew J. Basso,
James Beacham,
Scott L. Beaupré,
Graham Beck,
Carl Beichert,
Laura Bergsten,
Jose Bernabeu,
Prajita Bhattarai,
Ingo Bloch
, et al. (224 additional authors not shown)
Abstract:
For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000…
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For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000 modules in the forward region (end-caps), which are foreseen to be constructed over a period of 3.5 years. The construction of each module consists of a series of assembly and quality control steps, which were engineered to be identical for all production sites. In order to develop the tooling and procedures for assembly and testing of these modules, two series of major prototyping programs were conducted: an early program using readout chips designed using a 250 nm fabrication process (ABCN-25) and a subsequent program using a follow-up chip set made using 130 nm processing (ABC130 and HCC130 chips). This second generation of readout chips was used for an extensive prototyping program that produced around 100 barrel-type modules and contributed significantly to the development of the final module layout. This paper gives an overview of the components used in ABC130 barrel modules, their assembly procedure and findings resulting from their tests.
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Submitted 7 September, 2020;
originally announced September 2020.
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Effect of the polar distortion on the thermoelectric properties of GeTe
Authors:
Aida Sheibani,
Charles Paillard,
Abhyian Pandit,
Raad Haleoot,
Laurent Bellaiche,
Bothina Hamad
Abstract:
First principle calculations are performed to investigate the effect of polar order strength on the thermoelectric (TE) properties of GeTe alloy in its rhombohedral structure. The variation in the polarization state using various ferroelectric distortions λ (λ=0,0.5,1.0,1.25,1.5) allows to change the thermoelectric properties to a large extent. The polar structure with a high polarization mode (λ=…
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First principle calculations are performed to investigate the effect of polar order strength on the thermoelectric (TE) properties of GeTe alloy in its rhombohedral structure. The variation in the polarization state using various ferroelectric distortions λ (λ=0,0.5,1.0,1.25,1.5) allows to change the thermoelectric properties to a large extent. The polar structure with a high polarization mode (λ=1.5) tends to show a higher TE efficiency than the cubic structure at high temperatures. Thus, polarization engineering may play a key role in designing efficient thermoelectric devices. In particular, high TE performances could be achieved by growing epitaxial GeTe films that bi-axially compress the directions perpendicular to the polar axis, which may help to tune the Curie temperature.
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Submitted 29 June, 2020; v1 submitted 13 November, 2019;
originally announced November 2019.
