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Comparison between InAs-based and GaSb-based Interband cascade lasers with hybrid superlattice plasmon-enhanced claddings
Authors:
B. Petrović,
A. Bader,
J. Nauschütz,
T. Sato,
S. Birner,
S. Estevam,
R. Weih,
F. Hartmann,
S. Höfling
Abstract:
We compare InAs-based and GaSb-based interband cascade lasers (ICLs) with the same 12 stages active region designed to emit at a wavelength of 4.6 μm. They employ a hybrid cladding architecture with the same geometry and inner claddings consisting of InAs/AlSb superlattices but different outer claddings: The InAs-based ICL employs plasmon enhanced n-type doped InAs layers while the GaSb-based ICL…
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We compare InAs-based and GaSb-based interband cascade lasers (ICLs) with the same 12 stages active region designed to emit at a wavelength of 4.6 μm. They employ a hybrid cladding architecture with the same geometry and inner claddings consisting of InAs/AlSb superlattices but different outer claddings: The InAs-based ICL employs plasmon enhanced n-type doped InAs layers while the GaSb-based ICL employs plasmon-enhanced n-type doped InAs_0.915 Sb_0.085 claddings lattice matched to GaSb. Due to the lower refractive index of n+-InAsSb (n=2.88) compared to n+-InAs (n=3.10) and higher refractive index of separate confinement layers, the GaSb-based ICL shows a 3.8 % higher optical mode confinement in the active region compared to the InAs-based ICL. Experimentally, the GaSb-based ICL shows a 17.3 % lower threshold current density in pulsed operation at room temperature. Also presented is the influence of geometry and doping variation on confinement factors and calculated free carrier absorption losses in the GaSb-based ICL.
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Submitted 5 July, 2024; v1 submitted 11 March, 2024;
originally announced March 2024.
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5.0 $μ$m emitting Interband Cascade Lasers with Superlattice and Bulk AlGaAsSb Claddings
Authors:
B. Petrović,
A. Bader,
J. Nauschütz,
T. Sato,
S. Birner,
R. Weih,
F. Hartmann,
S. Höfling
Abstract:
We present a comparison between interband cascade lasers (ICLs) with a 6-stage active region emitting at 5 $μ$m with AlSb/InAs superlattice claddings and with bulk Al_0.85 Ga_0.15 As_0.07 Sb_0.93 claddings. Utilizing bulk AlGaAsSb claddings with their lower refractive index compared to the more commonly used AlSb/InAs superlattice claddings, the mode-confinement in the active region increases by 1…
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We present a comparison between interband cascade lasers (ICLs) with a 6-stage active region emitting at 5 $μ$m with AlSb/InAs superlattice claddings and with bulk Al_0.85 Ga_0.15 As_0.07 Sb_0.93 claddings. Utilizing bulk AlGaAsSb claddings with their lower refractive index compared to the more commonly used AlSb/InAs superlattice claddings, the mode-confinement in the active region increases by 14.4% resulting in an improvement of the lasing threshold current density. For broad area laser and under pulsed excitation, the ICL with AlGaAsSb claddings shows a lower threshold current density of J_th=396 A/cm$^2$ compared to J_th=521 A/cm$^2$ for the reference ICL with superlattice claddings. Additionally, a higher characteristic temperature was obtained for the ICL with bulk claddings. A measured pulsed operation is observed up to 65 C.
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Submitted 11 June, 2024; v1 submitted 29 February, 2024;
originally announced February 2024.
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GaSb-based Interband Cascade Laser with hybrid superlattice plasmon-enhanced claddings
Authors:
B. Petrović,
A. Bader,
J. Nauschütz,
T. Sato,
S. Birner,
R. Weih,
F. Hartmann,
S. Höfling
Abstract:
We present an interband cascade laser (ICL) emitting at 5.2 μm consisting of an 8-stage active region and a hybrid cladding composed of outer plasmon-enhanced InAs_0.915 Sb_0.085 and inner InAs/AlSb superlattice claddings. The hybrid cladding architecture shows an increase in mode-confinement in the active region by 11.2 % according to the simulation. This is a consequence of a significantly lower…
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We present an interband cascade laser (ICL) emitting at 5.2 μm consisting of an 8-stage active region and a hybrid cladding composed of outer plasmon-enhanced InAs_0.915 Sb_0.085 and inner InAs/AlSb superlattice claddings. The hybrid cladding architecture shows an increase in mode-confinement in the active region by 11.2 % according to the simulation. This is a consequence of a significantly lower refractive index of plasmon-enhanced claddings. The threshold current density is 242 A/cm^2 in pulsed operation at room temperature. This is the lowest value reported to date for ICLs emitting at wavelengths longer than 5 μm. We also report close to record value threshold power density of 840 W/cm^2 for ICLs at such wavelengths.
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Submitted 11 June, 2024; v1 submitted 30 January, 2024;
originally announced January 2024.
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Pushing the room temperature continous-wave operation limit of GaSb-based interband cascade lasers beyond 6 $μ$m
Authors:
Josephine Nauschütz,
Hedwig Knötig,
Robert Weih,
Julian Scheuermann,
Johannes Koeth,
Sven Höfling,
Benedikt Schwarz
Abstract:
We present GaSb-based interband cascade lasers emitting at a center wavelength of 6.12 $μ$m at 20$^\circ$C in continuous-wave operation up to a maximum operating temperature of 40$^\circ$C. Pulsed measurements based on broad area devices show improved performance by applying the recently published approach of adjusting the GaInSb layer thickness in the active region to reduce the valence intersubb…
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We present GaSb-based interband cascade lasers emitting at a center wavelength of 6.12 $μ$m at 20$^\circ$C in continuous-wave operation up to a maximum operating temperature of 40$^\circ$C. Pulsed measurements based on broad area devices show improved performance by applying the recently published approach of adjusting the GaInSb layer thickness in the active region to reduce the valence intersubband absorption. The W-quantum well design adjustment and the optimization of the electron injector, to rebalance the electron and hole concentrations in the active quantum wells, improved the device performance, yielding room temperature current densities as low as 0.5 kA/cm$^2$ for broad area devices under pulsed operation. As a direct result of this improvement the long wavelength limit for GaSb-based ICLs in continuous wave operation could be extended. For an epi-side down mounted 23 $μ$m wide and 2 mm long device with 9 active stages and high-reflectivity back facet the threshold power is below 1 W and the optical output power is over 25 mW at 20$^\circ$C in continuous-wave mode. Such low-threshold and low-power consumption interband cascade lasers are especially attractive for mobile and compact sensing systems.
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Submitted 22 July, 2022;
originally announced July 2022.
