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Barium Titanate and Lithium Niobate Permittivity and Pockels Coefficients from MHz to Sub-THz Frequencies
Authors:
Daniel Chelladurai,
Manuel Kohli,
Joel Winiger,
David Moor,
Andreas Messner,
Yuriy Fedoryshyn,
Mohammed Eleraky,
Yuqi Liu,
Hua Wang,
Juerg Leuthold
Abstract:
The Pockels effect is essential for controlling optical signals at the highest speeds. We present the first measurements of the Pockels coefficients and permittivity in lithium niobate (LN) and barium titanate (BTO) over a continuous frequency range from 100 MHz to 330 GHz. These properties are constant across this frequency range in LN but have a significant frequency dependence in BTO. Still, ou…
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The Pockels effect is essential for controlling optical signals at the highest speeds. We present the first measurements of the Pockels coefficients and permittivity in lithium niobate (LN) and barium titanate (BTO) over a continuous frequency range from 100 MHz to 330 GHz. These properties are constant across this frequency range in LN but have a significant frequency dependence in BTO. Still, our measurements show that BTO ($\varepsilon$ = 1136, $r_{42}$ = 481 pm/V, $r_{33}$ = 125 pm/V at 100 MHz, $\varepsilon$ = 453, $r_{42}$ = 191 pm/V, $r_{33}$ = 60 pm/V at 330 GHz) has remarkably large electro-optic properties compared to LN ($\varepsilon$ = 27, $r_{42}$ = 15 pm/V, $r_{33}$ = 27 pm/V). Furthermore, we show how BTO devices can be designed with a flat electro-optic frequency response despite the Pockels coefficient dispersion. Finally, we expound our method for broadband characterization of these vital electro-optic properties, utilizing specialized integrated electro-optic phase shifters. Altogether, this work is foundational to designing high-speed BTO devices and to developing new electro-optic materials.
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Submitted 3 July, 2024;
originally announced July 2024.
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PHz Electronic Device Design and Simulation for Waveguide-Integrated Carrier-Envelope Phase Detection
Authors:
Dario Cattozzo Mor,
Yujia Yang,
Felix Ritzkowsky,
Franz X. Kärtner,
Karl K. Berggren,
Neetesh Kumar Singh,
Phillip D. Keathley
Abstract:
Carrier-envelope phase (CEP) detection of ultrashort optical pulses and low-energy waveform field sampling have recently been demonstrated using direct time-domain methods that exploit optical-field photoemission from plasmonic nanoantennas. These devices make for compact and integratable solid-state detectors operating at optical frequency that work in ambient conditions and require minute pulse…
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Carrier-envelope phase (CEP) detection of ultrashort optical pulses and low-energy waveform field sampling have recently been demonstrated using direct time-domain methods that exploit optical-field photoemission from plasmonic nanoantennas. These devices make for compact and integratable solid-state detectors operating at optical frequency that work in ambient conditions and require minute pulse energies (picojoule-level). Applications include frequency-comb stabilization, visible to near-infrared time-domain spectroscopy, compact tools for attosecond science and metrology and, due to the high electronic switching speeds, petahertz-scale information processing. However, these devices have been driven by free-space optical waveforms and their implementation within integrated photonic platforms has yet to be demonstrated. In this work, we design and simulate fully-integrated plasmonic bow-tie nanoantennas coupled to a Si$_3$N$_4$-core waveguide for CEP detection. We find that when coupled to realistic on-chip, few-cycle supercontinuum sources, these devices are suitable for direct time-domain CEP detection within integrated photonic platforms. We estimate a signal-to-noise ratio of 30 dB at 50 kHz resolution bandwidth. We address technical details, such as the tuning of the nanoantennas plasmonic resonance and the waveform's CEP slippage in the waveguide. Moreover, we evaluate power losses due to absorption and scattering and we study the device sensitivity to pulse duration and pulse peak field intensity. Our results provide the basis for future design and fabrication of time-domain CEP detectors and allow for the development of fully-integrated attosecond science applications, frequency-comb stabilization and light-wave-based PHz electronics.
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Submitted 26 September, 2021;
originally announced September 2021.
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On-chip sampling of optical fields with attosecond resolution
Authors:
Mina R. Bionta,
Felix Ritzkowsky,
Marco Turchetti,
Yujia Yang,
Dario Cattozzo Mor,
William P. Putnam,
Franz X. Kärtner,
Karl K. Berggren,
Phillip D. Keathley
Abstract:
Time-domain sampling of arbitrary electric fields with sub-cycle resolution enables a complete time-frequency analysis of a system's response to electromagnetic illumination. This provides access to dynamic information that is not provided by absorption spectra alone, and has recently been shown through measurements in the infrared that time-domain optical-field sampling offers significant improve…
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Time-domain sampling of arbitrary electric fields with sub-cycle resolution enables a complete time-frequency analysis of a system's response to electromagnetic illumination. This provides access to dynamic information that is not provided by absorption spectra alone, and has recently been shown through measurements in the infrared that time-domain optical-field sampling offers significant improvements with regard to molecular sensitivity and limits of detection compared to traditional spectroscopic methods. Despite the many scientific and technological motivations, time-domain, optical-field sampling systems operating in the visible to near-infrared spectral regions are seldom accessible, requiring large driving pulse energies, and large laser amplifier systems, bulky apparatuses, and vacuum environments. Here, we demonstrate an all-on-chip, optoelectronic device capable of sampling arbitrary, low-energy, near-infrared waveforms under ambient conditions. Our solid-state integrated detector uses optical-field-driven electron emission from resonant nanoantennas to achieve petahertz-level switching speeds by generating on-chip attosecond electron bursts. These bursts are used to probe the electric field of weak optical transients. We demonstrated our devices by sampling the electric field of a ~5 fJ, broadband near-infrared ultrafast laser pulse using a ~50 pJ near-infrared driving pulse. Our sampling measurements recovered the weak optical transient as well as localized plasmonic dynamics of the emitting nanoantennas $in~situ$. This field-sampling device--with its compact footprint and low pulse-energy requirements--offers opportunities in a variety of applications, including: broadband time-domain spectroscopy in the molecular fingerprint region, time-domain analysis of nonlinear phenomena, and detailed studies of strong-field light-matter interactions.
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Submitted 13 September, 2020;
originally announced September 2020.
