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Single-mode emission by phase-delayed coupling between nano-lasers
Authors:
T. V. Raziman,
Anna Fischer,
Riccardo Nori,
Anthony Chan,
Wai Kit Ng,
Dhruv Saxena,
Ortwin Hess,
Korneel Molkens,
Ivo Tanghe,
Pieter Geiregat,
Dries Van Thourhout,
Mauricio Barahona,
Riccardo Sapienza
Abstract:
Near-field coupling between nanolasers enables collective high-power lasing but leads to complex spectral reshaping and multimode operation, limiting the emission brightness, spatial coherence and temporal stability. Many lasing architectures have been proposed to circumvent this limitation, based on symmetries, topology, or interference. We show that a much simpler and robust method exploiting ph…
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Near-field coupling between nanolasers enables collective high-power lasing but leads to complex spectral reshaping and multimode operation, limiting the emission brightness, spatial coherence and temporal stability. Many lasing architectures have been proposed to circumvent this limitation, based on symmetries, topology, or interference. We show that a much simpler and robust method exploiting phase-delayed coupling, where light exchanged by the lasers carries a phase, can enable stable single-mode operation. Phase-delayed coupling changes the modal amplification: for pump powers close to the anyonic parity-time (PT) symmetric exceptional point, a high phase delay completely separates the mode thresholds, leading to single mode operation. This is shown by stability analysis with nonlinear coupled mode theory and stochastic differential equations for two coupled nanolasers and confirmed by realistic semi-analytical treatment of a dimer of lasing nanospheres. Finally, we extend the mode control to large arrays of nanolasers, featuring lowered thresholds and higher power. Our work promises a novel solution to engineer bright and stable single-mode lasing from nanolaser arrays with important applications in photonic chips for communication and lidars.
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Submitted 4 July, 2024;
originally announced July 2024.
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Mode visualisation and control of complex lasers using neural networks
Authors:
Wai Kit Ng,
T. V. Raziman,
Dhruv Saxena,
Korneel Molkens,
Ivo Tanghe,
Zhenghe Xuan,
Pieter Geiregat,
Dries Van Thourhout,
Mauricio Barahona,
Riccardo Sapienza
Abstract:
Understanding the behaviour of complex laser systems is an outstanding challenge, especially in the presence of nonlinear interactions between modes. Hidden features, such as the gain distributions and spatial localisation of lasing modes, often cannot be revealed experimentally, yet they are crucial to determining the laser action. Here, we introduce a lasing spectroscopy method that can visualis…
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Understanding the behaviour of complex laser systems is an outstanding challenge, especially in the presence of nonlinear interactions between modes. Hidden features, such as the gain distributions and spatial localisation of lasing modes, often cannot be revealed experimentally, yet they are crucial to determining the laser action. Here, we introduce a lasing spectroscopy method that can visualise the gain profiles of the modes in complex lasers using an artificial neural network. The spatial gain distributions of different lasing modes in a disorderly coupled microring array are reconstructed without prior knowledge of the laser topology. We further extend the neural network to a tandem neural network that can control the laser emission by matching the modal gain/loss profile to selectively enhance the targeted modes. This mode visualisation method offers a new approach to extracting hidden spatial mode features from photonic structures, which could improve our understanding and control of complex photonic systems.
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Submitted 4 July, 2024;
originally announced July 2024.
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A silicon photonics waveguide-coupled colloidal quantum dot photodiode sensitive beyond 1.6 um
Authors:
Chao Pang,
Yu-Hao Deng,
Ezat Kheradmand,
Luis Moreno Hagelsieb,
Yujie Guo,
David Cheyns,
Pieter Geiregat,
Zeger Hens,
Dries Van Thourhout
Abstract:
Silicon photonics faces a persistent challenge in extending photodetection capabilities beyond the 1.6 um wavelength range, primarily due to the lack of appropriate epitaxial materials. Colloidal quantum dots (QDs) present a promising solution here, offering distinct advantages such as infrared wavelength tunability, cost-effectiveness, and facile deposition. Their unique properties position them…
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Silicon photonics faces a persistent challenge in extending photodetection capabilities beyond the 1.6 um wavelength range, primarily due to the lack of appropriate epitaxial materials. Colloidal quantum dots (QDs) present a promising solution here, offering distinct advantages such as infrared wavelength tunability, cost-effectiveness, and facile deposition. Their unique properties position them as a potential candidate for enabling photodetection in silicon photonics beyond the conventional telecom wavelength, thereby expanding the potential applications and capabilities within this domain. In this study, we have successfully integrated lead sulfide (PbS) colloidal quantum dot photodiodes (QDPDs) onto silicon waveguides using standard process techniques. The integrated photodiodes exhibit a remarkable responsivity of 1.3 A/W (with an external quantum efficiency of 74.8%) at a wavelength of 2.1 um, a low dark current of only 106 nA and a bandwidth of 1.1 MHz under a -3 V bias. To demonstrate the scalability of our integration approach, we have developed a compact 8-channel spectrometer incorporating an array of QDPDs. This achievement marks a significant step toward realizing a cost-effective photodetector solution for silicon photonics, particularly tailored for a wide range of sensing applications around the 2 um wavelength range.
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Submitted 28 May, 2024; v1 submitted 20 May, 2024;
originally announced May 2024.
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Generating Triplets in Organic Semiconductor Tetracene upon Photoexcitation of Transition Metal Dichalcogenide ReS$_2$
Authors:
Sourav Maiti,
Deepika Poonia,
Pieter Schiettecatte,
Zeger Hens,
Pieter Geiregat,
Sachin Kinge,
Laurens D. A. Siebbeles
Abstract:
We studied the dynamics of transfer of photoexcited electronic states in a bilayer of the two-dimensional transition metal dichalcogenide ReS$_2$ and tetracene, with the aim to produce triplets in the latter. This material combination was used as the band gap of ReS$_2$ (1.5 eV) is slightly larger than the triplet energy of tetracene (1.25 eV). Using time-resolved optical absorption spectroscopy,…
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We studied the dynamics of transfer of photoexcited electronic states in a bilayer of the two-dimensional transition metal dichalcogenide ReS$_2$ and tetracene, with the aim to produce triplets in the latter. This material combination was used as the band gap of ReS$_2$ (1.5 eV) is slightly larger than the triplet energy of tetracene (1.25 eV). Using time-resolved optical absorption spectroscopy, transfer of photoexcited states from ReS$_2$ to triplet states in tetracene was found to occur within 5 ps with an efficiency near 38%. This result opens up new possibilities for heterostructure design of two-dimensional materials with suitable organics to produce long-lived triplets. Triplets are of interest as sensitizers in a wide variety of applications including optoelectronics, photovoltaics, photocatalysis, and photon upconversion.
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Submitted 28 May, 2021; v1 submitted 30 April, 2021;
originally announced April 2021.
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On-Chip Integrated Quantum-Dot Silicon-Nitride Microdisk Lasers
Authors:
Weiqiang Xie,
Thilo Stöferle,
Gabriele Rainò,
Tangi Aubert,
Suzanne Bisschop,
Yunpeng Zhu,
Rainer F. Mahrt,
Pieter Geiregat,
Edouard Brainis,
Zeger Hens,
Dries Van Thourhout
Abstract:
Hybrid SiN-QD microlasers coupled to a passive SiN output waveguide with 7μm diameter and record low threshold density of 27 μJ cm-2 are demonstrated. A new design and unique processing scheme starting from SiN/QD/SiN stacks offer long term stability and facilitate in depth laser characterization. This approach opens up new paths for optical communication, lab-on-a-chip, gas sensing and, potential…
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Hybrid SiN-QD microlasers coupled to a passive SiN output waveguide with 7μm diameter and record low threshold density of 27 μJ cm-2 are demonstrated. A new design and unique processing scheme starting from SiN/QD/SiN stacks offer long term stability and facilitate in depth laser characterization. This approach opens up new paths for optical communication, lab-on-a-chip, gas sensing and, potentially, on-chip cavity quantum electrodynamics and quantum optics.
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Submitted 18 January, 2019;
originally announced January 2019.
