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Comparison between InAs-based and GaSb-based Interband cascade lasers with hybrid superlattice plasmon-enhanced claddings
Authors:
B. Petrović,
A. Bader,
J. Nauschütz,
T. Sato,
S. Birner,
S. Estevam,
R. Weih,
F. Hartmann,
S. Höfling
Abstract:
We compare InAs-based and GaSb-based interband cascade lasers (ICLs) with the same 12 stages active region designed to emit at a wavelength of 4.6 μm. They employ a hybrid cladding architecture with the same geometry and inner claddings consisting of InAs/AlSb superlattices but different outer claddings: The InAs-based ICL employs plasmon enhanced n-type doped InAs layers while the GaSb-based ICL…
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We compare InAs-based and GaSb-based interband cascade lasers (ICLs) with the same 12 stages active region designed to emit at a wavelength of 4.6 μm. They employ a hybrid cladding architecture with the same geometry and inner claddings consisting of InAs/AlSb superlattices but different outer claddings: The InAs-based ICL employs plasmon enhanced n-type doped InAs layers while the GaSb-based ICL employs plasmon-enhanced n-type doped InAs_0.915 Sb_0.085 claddings lattice matched to GaSb. Due to the lower refractive index of n+-InAsSb (n=2.88) compared to n+-InAs (n=3.10) and higher refractive index of separate confinement layers, the GaSb-based ICL shows a 3.8 % higher optical mode confinement in the active region compared to the InAs-based ICL. Experimentally, the GaSb-based ICL shows a 17.3 % lower threshold current density in pulsed operation at room temperature. Also presented is the influence of geometry and doping variation on confinement factors and calculated free carrier absorption losses in the GaSb-based ICL.
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Submitted 5 July, 2024; v1 submitted 11 March, 2024;
originally announced March 2024.
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5.0 $μ$m emitting Interband Cascade Lasers with Superlattice and Bulk AlGaAsSb Claddings
Authors:
B. Petrović,
A. Bader,
J. Nauschütz,
T. Sato,
S. Birner,
R. Weih,
F. Hartmann,
S. Höfling
Abstract:
We present a comparison between interband cascade lasers (ICLs) with a 6-stage active region emitting at 5 $μ$m with AlSb/InAs superlattice claddings and with bulk Al_0.85 Ga_0.15 As_0.07 Sb_0.93 claddings. Utilizing bulk AlGaAsSb claddings with their lower refractive index compared to the more commonly used AlSb/InAs superlattice claddings, the mode-confinement in the active region increases by 1…
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We present a comparison between interband cascade lasers (ICLs) with a 6-stage active region emitting at 5 $μ$m with AlSb/InAs superlattice claddings and with bulk Al_0.85 Ga_0.15 As_0.07 Sb_0.93 claddings. Utilizing bulk AlGaAsSb claddings with their lower refractive index compared to the more commonly used AlSb/InAs superlattice claddings, the mode-confinement in the active region increases by 14.4% resulting in an improvement of the lasing threshold current density. For broad area laser and under pulsed excitation, the ICL with AlGaAsSb claddings shows a lower threshold current density of J_th=396 A/cm$^2$ compared to J_th=521 A/cm$^2$ for the reference ICL with superlattice claddings. Additionally, a higher characteristic temperature was obtained for the ICL with bulk claddings. A measured pulsed operation is observed up to 65 C.
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Submitted 11 June, 2024; v1 submitted 29 February, 2024;
originally announced February 2024.
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GaSb-based Interband Cascade Laser with hybrid superlattice plasmon-enhanced claddings
Authors:
B. Petrović,
A. Bader,
J. Nauschütz,
T. Sato,
S. Birner,
R. Weih,
F. Hartmann,
S. Höfling
Abstract:
We present an interband cascade laser (ICL) emitting at 5.2 μm consisting of an 8-stage active region and a hybrid cladding composed of outer plasmon-enhanced InAs_0.915 Sb_0.085 and inner InAs/AlSb superlattice claddings. The hybrid cladding architecture shows an increase in mode-confinement in the active region by 11.2 % according to the simulation. This is a consequence of a significantly lower…
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We present an interband cascade laser (ICL) emitting at 5.2 μm consisting of an 8-stage active region and a hybrid cladding composed of outer plasmon-enhanced InAs_0.915 Sb_0.085 and inner InAs/AlSb superlattice claddings. The hybrid cladding architecture shows an increase in mode-confinement in the active region by 11.2 % according to the simulation. This is a consequence of a significantly lower refractive index of plasmon-enhanced claddings. The threshold current density is 242 A/cm^2 in pulsed operation at room temperature. This is the lowest value reported to date for ICLs emitting at wavelengths longer than 5 μm. We also report close to record value threshold power density of 840 W/cm^2 for ICLs at such wavelengths.
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Submitted 11 June, 2024; v1 submitted 30 January, 2024;
originally announced January 2024.
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THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures
Authors:
David Stark,
Muhammad Mirza,
Luca Persichetti,
Michele Montanari,
Sergej Markmann,
Mattias Beck,
Thomas Grange,
Stefan Birner,
Michele Virgilio,
Chiara Ciano,
Michele Ortolani,
Cedric Corley,
Giovanni Capellini,
Luciana Di Gaspare,
Monica De Seta,
Douglas J. Paul,
Jérôme Faist,
Giacomo Scalari
Abstract:
We report electroluminescence originating from L-valley transitions in n-type Ge/Si$_{0.15}$Ge$_{0.85}$ quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of $Δf/f \approx 0.2$. Three strain-compensated heterostructures, grown on a Si substrate by ultrahigh vacuum chemical vapor deposition, have been investigated. The design is based on a single quantum well active regio…
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We report electroluminescence originating from L-valley transitions in n-type Ge/Si$_{0.15}$Ge$_{0.85}$ quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of $Δf/f \approx 0.2$. Three strain-compensated heterostructures, grown on a Si substrate by ultrahigh vacuum chemical vapor deposition, have been investigated. The design is based on a single quantum well active region employing a vertical optical transition and the observed spectral features are well described by non-equilibrium Green's function calculations. The presence of two peaks highlights a suboptimal injection in the upper state of the radiative transition. Comparison of the electroluminescence spectra with similar GaAs/AlGaAs structure yields one order of magnitude lower emission efficiency.
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Submitted 14 January, 2021;
originally announced January 2021.
