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The Electric Force Between Two Straight Parallel Resistive Wires Carrying DC-Currents in the Asymptotic Limit of Infinitely Thin Wires
Authors:
Udo Ausserlechner
Abstract:
During the years 1948-2019 the ampere was defined via the magnetic force between two long thin parallel wires carrying stationary current. However, if a stationary current flows through a resistive wire, static electric charges appear on the surface of the wire, and this will lead to an additional electric force between the wires. This article discusses the ratio of electric over magnetic forces i…
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During the years 1948-2019 the ampere was defined via the magnetic force between two long thin parallel wires carrying stationary current. However, if a stationary current flows through a resistive wire, static electric charges appear on the surface of the wire, and this will lead to an additional electric force between the wires. This article discusses the ratio of electric over magnetic forces in the asymptotic limit of infinitely thin wires, which is not accessible by numerical methods. The electric force between the two wires depends also on the choice of the common ground node. For extremely thin or extremely long resistive wires the electric force dominates over the magnetic one.
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Submitted 2 July, 2024;
originally announced July 2024.
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Drift of sensitive direction of Hall-effect devices in (100)-silicon caused by mechanical shear stress
Authors:
Udo Ausserlechner,
Michael Holliber,
Benjamin Kollmitzer,
Richard Heinz
Abstract:
The output signal of classical symmetrical Hall plates is an odd function of the magnetic field component acting perpendicular to the plate. At weak magnetic field the Hall plate output is linearly proportional to the perpendicular magnetic field. Magnetic field components parallel to the plate may also contribute to the output signal via the planar Hall effect. It leads to even order terms of the…
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The output signal of classical symmetrical Hall plates is an odd function of the magnetic field component acting perpendicular to the plate. At weak magnetic field the Hall plate output is linearly proportional to the perpendicular magnetic field. Magnetic field components parallel to the plate may also contribute to the output signal via the planar Hall effect. It leads to even order terms of the in-plane magnetic field in the output signal. At moderate magnetic field the planar Hall effect adds to the output signal a term proportional to the square of the in-plane magnetic field. This paper reports on linear terms of the in-plane magnetic field component to the output signal of Hall-plates, when they are subjected to mechanical shear stress. The effect is small for Hall plates but large for Vertical Hall devices in (100)-silicon. It is fully described by piezo-resistance and piezo-Hall tensors. We present results of numerical simulations and measurements. Thin devices are less affected than thick devices. If magnetic angle sensors are made of Vertical Hall devices, in-plane shear stress leads to a small orthogonality error which - in contrast to the planar Hall effect - cannot be cancelled out by spinning current schemes. We propose a compensation circuit to eliminate this shear-stress induced orthogonality error.
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Submitted 24 September, 2020;
originally announced September 2020.
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Temperature Dependence of Sensitivity of 2DEG-Based Hall-Effect Sensors
Authors:
Hannah S. Alpert,
Caitlin A. Chapin,
Karen M. Dowling,
Savannah R. Benbrook,
Helmut Köck,
Udo Ausserlechner,
Debbie G. Senesky
Abstract:
The magnetic sensitivity of Hall-effect sensors made of InAlN/GaN and AlGaN/GaN heterostructures was measured between room temperature and 576°C. Both devices showed decreasing voltage-scaled magnetic sensitivity at high temperature, declining from 53 to 8.3 mV/V/T for the InAlN/GaN sample and from 89 to 8.5 mV/V/T for the AlGaN/GaN sample, corresponding to the decreasing electron mobility due to…
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The magnetic sensitivity of Hall-effect sensors made of InAlN/GaN and AlGaN/GaN heterostructures was measured between room temperature and 576°C. Both devices showed decreasing voltage-scaled magnetic sensitivity at high temperature, declining from 53 to 8.3 mV/V/T for the InAlN/GaN sample and from 89 to 8.5 mV/V/T for the AlGaN/GaN sample, corresponding to the decreasing electron mobility due to scattering effects at elevated temperatures. Alternatively, current-scaled sensitivities remained stable over the temperature range, only varying by 13.1% from the mean of 26.3 V/A/T and 10.5% from the mean of 60.2 V/A/T for the InAlN/GaN and AlGaN/GaN samples respectively. This is due to the minimal temperature dependence of the electron sheet density on the 2-dimensional electron gas (2DEG). Both devices showed consistency in their voltage- and current-scaled sensitivity over multiple temperature cycles as well as nearly full recovery when returned to room temperature after thermal cycling. Additionally, an AlGaN/GaN sample held at 576°C for 12 hours also showed nearly full recovery at room temperature, further suggesting that GaN-based Hall-effect sensors are a good candidate for use in high temperature applications.
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Submitted 2 December, 2019;
originally announced December 2019.
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Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-effect Sensors
Authors:
Hannah S. Alpert,
Karen M. Dowling,
Caitlin A. Chapin,
Ananth Saran Yalamarthy,
Savannah R. Benbrook,
Helmut Köck,
Udo Ausserlechner,
Debbie G. Senesky
Abstract:
The current- and voltage-scaled sensitivities and signal-to-noise ratios (SNR) (with respect to thermal noise) of various octagonal AlGaN/GaN and InAlN/GaN Hall-effect sensors were examined in this work. The effect of metal contact lengths on sensitivity and sensor offset was evaluated. Calculations that take into account the shape of the device show that devices with point-like contacts have the…
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The current- and voltage-scaled sensitivities and signal-to-noise ratios (SNR) (with respect to thermal noise) of various octagonal AlGaN/GaN and InAlN/GaN Hall-effect sensors were examined in this work. The effect of metal contact lengths on sensitivity and sensor offset was evaluated. Calculations that take into account the shape of the device show that devices with point-like contacts have the highest current-scaled sensitivity (68.9 V/A/T), while devices with contacts of equal length to their non-contact sides have the highest voltage-scaled sensitivity (86.9 mV/V/T). The sensitivities of the two other devices follow the predicted trends closely. All the devices have offsets less than 20 $μ$T at low supply current operation (< 300 $μ$A) and most remain below 35 $μ$T at higher supply current (up to 1.2 mA). The consistent low offsets across the devices imply that the choice of Hall-effect sensor geometry should mainly depend on whether the device is current-biased or voltage-biased and the frequency at which it will operate. This work demonstrates that GaN Hall-effect sensor performance can be improved by adjusting the geometry of the Hall-effect plate specific to its function (e.g., power electronics, navigation, automotive applications).
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Submitted 3 December, 2018;
originally announced December 2018.
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Micro-Tesla Offset in Thermally Stable AlGaN/GaN 2DEG Hall-effect Plates using Current Spinning
Authors:
Karen M. Dowling,
Hannah S. Alpert,
Ananth Saran Yalamarthy,
Peter F. Satterthwaite,
Sai Kumar,
Helmut Koeck,
Udo Ausserlechner,
Debbie G. Senesky
Abstract:
This letter describes the characterization of a low-offset Hall-effect plate using the AlGaN/GaN two-dimensional electron gas(2DEG). Four-phase current spinning was used to reduce sensor offset voltage to values in the range of 20 nV, which corresponds to a low residual offset of 2.6 micro-Tesla when supplied with low voltages (0.04 to 0.5V). These offsets are 50x smaller than the values previousl…
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This letter describes the characterization of a low-offset Hall-effect plate using the AlGaN/GaN two-dimensional electron gas(2DEG). Four-phase current spinning was used to reduce sensor offset voltage to values in the range of 20 nV, which corresponds to a low residual offset of 2.6 micro-Tesla when supplied with low voltages (0.04 to 0.5V). These offsets are 50x smaller than the values previously reported for GaN Hall-effect plates, and it is on par with state-of-the-art silicon Hall-effect plates. In addition, the offset does not exceed 10 micro-Tesla even at higher supply voltage of 2.34V. The sensor also shows stable current-scaled sensitivity over a wide temperature range of -100C to 200C, with temperature drift of -125 ppm/C. This value is 3x better than state-of-the-art Silicon Hall-effect plates. Additionally, the sensor's voltage sensitivity (57 mV/V/T) is also similar. Because of their low offset values, AlGaN/GaN Hall-effect plates are viable candidates for low-field and high temperature magnetic sensing in monolithic GaN systems used in extreme temperature environments such as power inverter, down-well, combustion, and space applications.
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Submitted 28 December, 2018; v1 submitted 2 December, 2018;
originally announced December 2018.
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Macroscopic Simulation of Isotropic Permanent Magnets
Authors:
Florian Bruckner,
Claas Abert,
Christoph Vogler,
Frank Heinrichs,
Armin Satz,
Udo Ausserlechner,
Gernot Binder,
Helmut Koeck,
Dieter Suess
Abstract:
Accurate simulations of isotropic permanent magnets require to take the magnetization process into account and consider the anisotropic, nonlinear, and hysteretic material behaviour near the saturation configuration. An efficient method for the solution of the magnetostatic Maxwell equations including the description of isotropic permanent magnets is presented. The algorithm can easily be implemen…
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Accurate simulations of isotropic permanent magnets require to take the magnetization process into account and consider the anisotropic, nonlinear, and hysteretic material behaviour near the saturation configuration. An efficient method for the solution of the magnetostatic Maxwell equations including the description of isotropic permanent magnets is presented. The algorithm can easily be implemented on top of existing finite element methods and does not require a full characterization of the hysteresis of the magnetic material. Strayfield measurements of an isotropic permanent magnet and simulation results are in good agreement and highlight the importance of a proper description of the isotropic material.
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Submitted 2 July, 2015;
originally announced July 2015.
