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The Belle II Detector Upgrades Framework Conceptual Design Report
Authors:
H. Aihara,
A. Aloisio,
D. P. Auguste,
M. Aversano,
M. Babeluk,
S. Bahinipati,
Sw. Banerjee,
M. Barbero,
J. Baudot,
A. Beaubien,
F. Becherer,
T. Bergauer,
F. U. Bernlochner.,
V. Bertacchi,
G. Bertolone,
C. Bespin,
M. Bessner,
S. Bettarini,
A. J. Bevan,
B. Bhuyan,
M. Bona,
J. F. Bonis,
J. Borah,
F. Bosi,
R. Boudagga
, et al. (186 additional authors not shown)
Abstract:
We describe the planned near-term and potential longer-term upgrades of the Belle II detector at the SuperKEKB electron-positron collider operating at the KEK laboratory in Tsukuba, Japan. These upgrades will allow increasingly sensitive searches for possible new physics beyond the Standard Model in flavor, tau, electroweak and dark sector physics that are both complementary to and competitive wit…
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We describe the planned near-term and potential longer-term upgrades of the Belle II detector at the SuperKEKB electron-positron collider operating at the KEK laboratory in Tsukuba, Japan. These upgrades will allow increasingly sensitive searches for possible new physics beyond the Standard Model in flavor, tau, electroweak and dark sector physics that are both complementary to and competitive with the LHC and other experiments.
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Submitted 4 July, 2024; v1 submitted 26 June, 2024;
originally announced June 2024.
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The anomalous magnetic moment of the muon in the Standard Model
Authors:
T. Aoyama,
N. Asmussen,
M. Benayoun,
J. Bijnens,
T. Blum,
M. Bruno,
I. Caprini,
C. M. Carloni Calame,
M. Cè,
G. Colangelo,
F. Curciarello,
H. Czyż,
I. Danilkin,
M. Davier,
C. T. H. Davies,
M. Della Morte,
S. I. Eidelman,
A. X. El-Khadra,
A. Gérardin,
D. Giusti,
M. Golterman,
Steven Gottlieb,
V. Gülpers,
F. Hagelstein,
M. Hayakawa
, et al. (107 additional authors not shown)
Abstract:
We review the present status of the Standard Model calculation of the anomalous magnetic moment of the muon. This is performed in a perturbative expansion in the fine-structure constant $α$ and is broken down into pure QED, electroweak, and hadronic contributions. The pure QED contribution is by far the largest and has been evaluated up to and including $\mathcal{O}(α^5)$ with negligible numerical…
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We review the present status of the Standard Model calculation of the anomalous magnetic moment of the muon. This is performed in a perturbative expansion in the fine-structure constant $α$ and is broken down into pure QED, electroweak, and hadronic contributions. The pure QED contribution is by far the largest and has been evaluated up to and including $\mathcal{O}(α^5)$ with negligible numerical uncertainty. The electroweak contribution is suppressed by $(m_μ/M_W)^2$ and only shows up at the level of the seventh significant digit. It has been evaluated up to two loops and is known to better than one percent. Hadronic contributions are the most difficult to calculate and are responsible for almost all of the theoretical uncertainty. The leading hadronic contribution appears at $\mathcal{O}(α^2)$ and is due to hadronic vacuum polarization, whereas at $\mathcal{O}(α^3)$ the hadronic light-by-light scattering contribution appears. Given the low characteristic scale of this observable, these contributions have to be calculated with nonperturbative methods, in particular, dispersion relations and the lattice approach to QCD. The largest part of this review is dedicated to a detailed account of recent efforts to improve the calculation of these two contributions with either a data-driven, dispersive approach, or a first-principle, lattice-QCD approach. The final result reads $a_μ^\text{SM}=116\,591\,810(43)\times 10^{-11}$ and is smaller than the Brookhaven measurement by 3.7$σ$. The experimental uncertainty will soon be reduced by up to a factor four by the new experiment currently running at Fermilab, and also by the future J-PARC experiment. This and the prospects to further reduce the theoretical uncertainty in the near future-which are also discussed here-make this quantity one of the most promising places to look for evidence of new physics.
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Submitted 13 November, 2020; v1 submitted 8 June, 2020;
originally announced June 2020.
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Observations on MIMOSIS-0, the first dedicated CPS prototype for the CBM MVD
Authors:
M. Deveaux,
B. Arnoldi-Meadows,
G. Bertolone,
G. Claus,
A. Dorokhov,
M. Goffe,
A. Himmi,
K. Jaaskelainen,
P. Klaus,
M. Koziel,
F. Marx,
F. Morel,
C. Müntz,
H. Pham,
M. Specht,
I. Valin,
J. Stroth,
M. Winter
Abstract:
The Micro Vertex Detector (MVD) of the future Compressed Baryonic Matter (CBM) experiment at FAIR will have to provide a spatial precision of $\sim 5~\rm μm$ in combination with a material budget of 0.3\% - 0.5\% X$_0$ for a full detector station. Simultaneously, it will have to handle the rate and radiation load of operating the fixed target experiment at an average collision rate of 100 kHz (4 -…
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The Micro Vertex Detector (MVD) of the future Compressed Baryonic Matter (CBM) experiment at FAIR will have to provide a spatial precision of $\sim 5~\rm μm$ in combination with a material budget of 0.3\% - 0.5\% X$_0$ for a full detector station. Simultaneously, it will have to handle the rate and radiation load of operating the fixed target experiment at an average collision rate of 100 kHz (4 - 10 AGeV Au+Au collisions) or 10 MHz (up to 28 GeV p-A collisions). The harsh requirements call for a dedicated detector technology, which is the next generation CMOS Monolithic Active Pixel Sensor MIMOSIS. We report about the requirements for the sensor, introduce the design approach being followed to cope with it and show first test results from a first sensor prototype called MIMOSIS-0 .
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Submitted 12 September, 2019;
originally announced September 2019.
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On drift fields in CMOS Monolithic Active Pixel Sensors with point-like collection diodes
Authors:
M. Deveaux,
J. Baudot,
A. Dorokhov,
D. Doering,
J. Heymes,
M. Kachel,
M. Koziel,
B. Linnik,
C. Müntz,
J. Stroth
Abstract:
- Paper withdrawn by the author - CMOS Monolithic Active Pixel Sensors for charged particle tracking are considered as technology for numerous experiments in heavy ion and particle physics. To match the requirements for those applications in terms of tolerance to non-ionizing radiation, it is being tried to deplete the sensitive volume of the, traditionally non-depleted, silicon sensors.
We stud…
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- Paper withdrawn by the author - CMOS Monolithic Active Pixel Sensors for charged particle tracking are considered as technology for numerous experiments in heavy ion and particle physics. To match the requirements for those applications in terms of tolerance to non-ionizing radiation, it is being tried to deplete the sensitive volume of the, traditionally non-depleted, silicon sensors.
We study the feasibility of this approach for the common case that the collection diodes of the pixel are small as compared to the pixel pitch. An analytic equation predicting the thickness of the depletion depth and the capacity of this point-like junction is introduced. We find that the predictions of this equations differs qualitatively from the usual results for flat PN junctions and that $dC/dU$-measurements are not suited to measure the depletion depth of diodes with point-like geometry. The predictions of the equation is compared with measurements on the depletion depth of CMOS sensors, which were carried out with a novel measurement protocol. It is found that the equation and the measurement results match with each other. By comparing our findings with TCAD simulations, we find that precise simulation models matches the empirical findings while simplified models overestimate the depletion depth dramatically. A potential explanation for this finding is introduced and the consequences for the design of CMOS sensors are discussed.
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Submitted 29 October, 2016; v1 submitted 26 July, 2016;
originally announced July 2016.
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Optimisation of CMOS pixel sensors for high performance vertexing and tracking
Authors:
Jerome Baudot,
Auguste Besson,
Gilles Claus,
Wojciech Dulinski,
Andrei Dorokhov,
Mathieu Goffe,
Christine Hu-Guo,
Levente Molnar,
Xitzel Sanchez-Castro,
Serhyi Senyukov,
Marc Winter
Abstract:
CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher read-out speed and radiation tolerance than those achieved with available devices based on a 0.35 micrometers feature size technology. This paper shows preliminary…
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CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher read-out speed and radiation tolerance than those achieved with available devices based on a 0.35 micrometers feature size technology. This paper shows preliminary test results of new prototype sensors manufactured in a 0.18 micrometers process based on a high resistivity epitaxial layer of sizeable thickness. Grounded on these observed performances, we discuss a development strategy over the coming years to reach a full scale sensor matching the specifications of the upgraded version of the Inner Tracking System (ITS) of the ALICE experiment at CERN, for which a sensitive area of up to about 10 square meters may be equipped with pixel sensors.
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Submitted 3 May, 2013; v1 submitted 2 May, 2013;
originally announced May 2013.
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Charged particle detection performances of CMOS pixel sensors produced in a 0.18 um process with a high resistivity epitaxial layer
Authors:
Serhiy Senyukov,
Jerome Baudot,
Auguste Besson,
Gilles Claus,
Loic Cousin,
Andrei Dorokhov,
Wojciech Dulinski,
Mathieu Goffe,
Christine Hu-Guo,
Marc Winter
Abstract:
The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low transverse momenta. This requires a substantial improvement of the spatial resolution and the data rate capability of the ALICE Inner Tracking System (ITS). To achi…
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The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low transverse momenta. This requires a substantial improvement of the spatial resolution and the data rate capability of the ALICE Inner Tracking System (ITS). To achieve this goal, the new ITS will be equipped with 50 um thin CMOS Pixel Sensors (CPS) covering either the 3 innermost layers or all the 7 layers of the detector. The CPS being developed for the ITS upgrade at IPHC (Strasbourg) is derived from the MIMOSA 28 sensor realised for the STAR-PXL at RHIC in a 0.35 um CMOS process. In order to satisfy the ITS upgrade requirements in terms of readout speed and radiation tolerance, a CMOS process with a reduced feature size and a high resistivity epitaxial layer should be exploited. In this respect, the charged particle detection performance and radiation hardness of the TowerJazz 0.18 um CMOS process were studied with the help of the first prototype chip MIMOSA 32. The beam tests performed with negative pions of 120 GeV/c at the CERN-SPS allowed to measure a signal-to-noise ratio (SNR) for the non-irradiated chip in the range between 22 and 32 depending on the pixel design. The chip irradiated with the combined dose of 1 MRad and 10^13 n_eq/cm^2 was observed to yield a SNR ranging between 11 and 23 for coolant temperatures varying from 15 C to 30 C. These SNR values were measured to result in particle detection efficiencies above 99.5% and 98% before and after irradiation respectively. These satisfactory results allow to validate the TowerJazz 0.18 um CMOS process for the ALICE ITS upgrade.
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Submitted 7 March, 2013; v1 submitted 3 January, 2013;
originally announced January 2013.
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The meson-exchange induced light--by--light contribution to $(g-2)_μ$ within the nonlocal chiral quark model
Authors:
A. E. Dorokhov,
A. E. Radzhabov,
A. S. Zhevlakov
Abstract:
The current status of the muon anomalous magnetic moment (AMM) problem is briefly presented. The corrections to the muon AMM coming from the effects of hadronic light-by-light (LbL) scattering due to light quark-antiquark exchange in pseudoscalar and scalar channels are estimated within the nonlocal chiral quark model (N$χ$QM). Within this approach the full kinematic dependence on the photon and m…
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The current status of the muon anomalous magnetic moment (AMM) problem is briefly presented. The corrections to the muon AMM coming from the effects of hadronic light-by-light (LbL) scattering due to light quark-antiquark exchange in pseudoscalar and scalar channels are estimated within the nonlocal chiral quark model (N$χ$QM). Within this approach the full kinematic dependence on the photon and meson virtualities are taken into account. As a result, the meson exchange contributions to the muon AMM calculated within N$χ$QM are, in general, smaller than the contributions obtained within other models. The contribution from the scalar channel is positive and small, but stabilizes the combined with pseudoscalar channel result with respect to variation of the model parameters.
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Submitted 4 December, 2012;
originally announced December 2012.
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Development of CMOS Pixel Sensors fully adapted to the ILD Vertex Detector Requirements
Authors:
Marc Winter,
Jerome Baudot,
Auguste Besson,
Gilles Claus,
Andrei Dorokhov,
Mathieu Goffe,
Christine Hu-Guo,
Frederic Morel,
Isabelle Valin,
Georgios Voutsinas,
Liang Zhang
Abstract:
CMOS Pixel Sensors are making steady progress towards the specifications of the ILD vertex detector. Recent developments are summarised, which show that these devices are close to comply with all major requirements, in particular the read-out speed needed to cope with the beam related background. This achievement is grounded on the double- sided ladder concept, which allows combining signals gener…
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CMOS Pixel Sensors are making steady progress towards the specifications of the ILD vertex detector. Recent developments are summarised, which show that these devices are close to comply with all major requirements, in particular the read-out speed needed to cope with the beam related background. This achievement is grounded on the double- sided ladder concept, which allows combining signals generated by a single particle in two different sensors, one devoted to spatial resolution and the other to time stamp, both assembled on the same mechanical support. The status of the development is overviewed as well as the plans to finalise it using an advanced CMOS process.
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Submitted 16 March, 2012;
originally announced March 2012.
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Photon-pion transition form factor: BABAR puzzle is cracked
Authors:
A. E. Dorokhov
Abstract:
Recently, the BABAR collaboration published (arXiv:0905.4778) data for the photon-pion transition form factor $F_{πγγ^{\ast}}(Q^{2})$, which are in strong contradiction to the predictions of the standard factorization approach to perturbative QCD. Immediately afterwards, two mechanisms were suggested (A.E. Dorokhov, arXiv:0905.4577; A.V. Radyushkin, arXiv:0906.0323), that logarithmically enhance t…
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Recently, the BABAR collaboration published (arXiv:0905.4778) data for the photon-pion transition form factor $F_{πγγ^{\ast}}(Q^{2})$, which are in strong contradiction to the predictions of the standard factorization approach to perturbative QCD. Immediately afterwards, two mechanisms were suggested (A.E. Dorokhov, arXiv:0905.4577; A.V. Radyushkin, arXiv:0906.0323), that logarithmically enhance the form factor asymptotics and therefore provide a qualitatively satisfactory description of the BABAR data. However, the physics of the BABAR effect was not fully clarified. In the present work, based on a nonperturbative approach to the QCD vacuum and on rather universal assumptions, we show that there exists two asymptotic regimes for the pion transition form factor. One regime with asymptotics $F_{πγ^{\ast}γ}(Q^{2})\sim1/Q^{2}$ corresponds to the result of the standard QCD factorization approach, while other violates the standard factorization and leads to asymptotic behavior as $F_{πγ^{\ast}γ}(Q^{2})\sim\ln(Q^{2})Q^{2}$. Furthermore, considering specific nonlocal chiral quark models, we find the region of parameters, where the existing CELLO, CLEO and BABAR data for the pion transition form factor are successfully described.
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Submitted 19 April, 2010; v1 submitted 24 March, 2010;
originally announced March 2010.
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Rare decay π^0 \to e^+e^- as a Test of Standard Model
Authors:
A. E. Dorokhov
Abstract:
Experimental and theoretical progress concerning the rare decay π^0 \to e^+e^- is briefly reviewed. It includes the latest data from KTeV and a new model independent estimate of the decay branching which show the deviation between experiment and theory at the level of $3.3σ$. The predictions for ηand η' decays into lepton pair are presented. We also comment on the impact on the pion rare decay e…
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Experimental and theoretical progress concerning the rare decay π^0 \to e^+e^- is briefly reviewed. It includes the latest data from KTeV and a new model independent estimate of the decay branching which show the deviation between experiment and theory at the level of $3.3σ$. The predictions for ηand η' decays into lepton pair are presented. We also comment on the impact on the pion rare decay estimate of the BABAR collaboration on the pion transition form factor at large momentum transfer.
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Submitted 5 June, 2009; v1 submitted 28 May, 2009;
originally announced May 2009.
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M.i.p. detection performances of a 100 us read-out CMOS pixel sensor with digitised outputs
Authors:
Marc Winter,
Jerome Baudot,
Auguste Besson,
Claude Colledani,
Yavuz Degerli,
Rita De Masi,
Andrei Dorokhov,
Guy Doziere,
Wojciech Dulinski,
Marie Gelin,
Fabrice Guilloux,
Abdelkader Himmi,
Christine Hu-Guo,
Frederic Morel,
Fabienne Orsini,
Isabelle Valin,
Georgios Voutsinas
Abstract:
Swift, high resolution CMOS pixel sensors are being developed for the ILC vertex detector, aiming to allow approaching the interaction point very closely. A major issue is the time resolution of the sensors needed to deal with the high occupancy generated by the beam related background. A 128x576 pixel sensor providing digitised outputs at a read-out time of 92.5 us, was fabricated in 2008 withi…
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Swift, high resolution CMOS pixel sensors are being developed for the ILC vertex detector, aiming to allow approaching the interaction point very closely. A major issue is the time resolution of the sensors needed to deal with the high occupancy generated by the beam related background. A 128x576 pixel sensor providing digitised outputs at a read-out time of 92.5 us, was fabricated in 2008 within the EU project EUDET, and tested with charged particles at the CERN-SPS. Its prominent performances in terms of noise, detection efficiency versus fake hit rate, spatial resolution and radiation tolerance are overviewed. They validate the sensor architecture.
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Submitted 16 February, 2009;
originally announced February 2009.
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Rare decay pi0 -> e+e-: theory confronts KTeV data
Authors:
Alexander E. Dorokhov,
Mikhail A. Ivanov
Abstract:
Within the dispersive approach to the amplitude of the rare decay pi0 -> e+e- the nontrivial dynamics is contained only in the subtraction constant. We express this constant, in the leading order in (m_e/Λ)^2 perturbative series, in terms of the inverse moment of the pion transition form factor given in symmetric kinematics. By using the CELLO and CLEO data on the pion transition form factor giv…
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Within the dispersive approach to the amplitude of the rare decay pi0 -> e+e- the nontrivial dynamics is contained only in the subtraction constant. We express this constant, in the leading order in (m_e/Λ)^2 perturbative series, in terms of the inverse moment of the pion transition form factor given in symmetric kinematics. By using the CELLO and CLEO data on the pion transition form factor given in asymmetric kinematics the lower bound on the decay branching ratio is found. The restrictions following from QCD allow us to make a quantitative prediction for the branching B(pi0 -> e+e-) =(6.2\pm 0.1)*10^{-8} which is 3σbelow the recent KTeV measurement. We confirm our prediction by using the quark models and phenomenological approaches based on the vector meson dominance. The decays η-> l^+l^- are also discussed.
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Submitted 25 May, 2007; v1 submitted 26 April, 2007;
originally announced April 2007.
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Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors
Authors:
M. Swartz,
V. Chiochia,
Y. Allkofer,
D. Bortoletto,
L. Cremaldi,
S. Cucciarelli,
A. Dorokhov,
C. Hoermann,
D. Kim,
M. Konecki,
D. Kotlinski,
K. Prokofiev,
C. Regenfus,
T. Rohe,
D. A. Sanders,
S. Son,
T. Speer
Abstract:
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14}…
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We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon.
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Submitted 5 January, 2006; v1 submitted 5 October, 2005;
originally announced October 2005.
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A double junction model of irradiated silicon pixel sensors for LHC
Authors:
V. Chiochia,
M. Swartz,
Y. Allkofer,
D. Bortoletto,
L. Cremaldi,
S. Cucciarelli,
A. Dorokhov,
C. Hoermann,
D. Kim,
M. Konecki,
D. Kotlinski,
K. Prokofiev,
C. Regenfus,
T. Rohe,
D. A. Sanders,
S. Son,
M. Swartz,
T. Speer
Abstract:
In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to…
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In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to describe the data and excludes a description based on acceptor defects uniformly distributed across the sensor bulk. In addition, the dependence of trap concentrations upon fluence is established by comparing the measured and simulated profiles at several fluences and bias voltages.
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Submitted 30 June, 2005;
originally announced June 2005.
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Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements
Authors:
Vincenzo Chiochia,
Morris Swartz,
Daniela Bortoletto,
Lucien Cremaldi,
Susanna Cucciarelli,
Andrei Dorokhov,
Christoph Hoermann,
Dongwook Kim,
Marcin Konecki,
Danek Kotlinski,
Kirill Prokofiev,
Christian Regenfus,
Tilman Rohe,
David A. Sanders,
Seunghee Son,
Thomas Speer
Abstract:
Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standar…
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Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trapping observed in the data.
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Submitted 4 May, 2005; v1 submitted 16 November, 2004;
originally announced November 2004.
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Type inversion in irradiated silicon: a half truth
Authors:
M. Swartz,
D. Bortoletto,
V. Chiochia,
L. Cremaldi,
S. Cucciarelli,
A. Dorokhov,
M. Konecki,
K. Prokofiev,
C. Regenfus,
T. Rohe,
D. A. Sanders,
S. Son,
T. Speer
Abstract:
Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standar…
▽ More
Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well at two different fluences. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of signal trapping observed in the data.
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Submitted 13 September, 2004; v1 submitted 9 September, 2004;
originally announced September 2004.
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Kaon physics with a high-intensity proton driver
Authors:
A. Belyaev,
G. Buchalla,
A. Ceccucci,
M. Chizhov,
G. D'Ambrosio,
A. Dorokhov,
J. Ellis,
M. E. Gomez,
T. Hurth,
G. Isidori,
G. Kalmus,
S. Lola,
K. Zuber
Abstract:
We study opportunities for future high-precision experiments in kaon physics using a high-intensity proton driver, which could be part of the front-end of a muon storage ring complex. We discuss in particular the rare decays $K_L\toπ^0ν\barν$, $K^+\toπ^+ν\barν$, $K_L\toπ^0e^+e^-$, and lepton-flavour violating modes such as $K_L\toμe$ and $K\toπμe$. The outstanding physics potential and long-term…
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We study opportunities for future high-precision experiments in kaon physics using a high-intensity proton driver, which could be part of the front-end of a muon storage ring complex. We discuss in particular the rare decays $K_L\toπ^0ν\barν$, $K^+\toπ^+ν\barν$, $K_L\toπ^0e^+e^-$, and lepton-flavour violating modes such as $K_L\toμe$ and $K\toπμe$. The outstanding physics potential and long-term interest of these modes is emphasized. We review status and prospects of current and planned experiments for the processes under consideration, and indicate possible improvements and strategies towards achieving the necessary higher sensitivity. Finally, we outline the machine requirements needed to perform these high-precision kaon experiments in the context of a muon storage ring facility.
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Submitted 12 July, 2001; v1 submitted 5 July, 2001;
originally announced July 2001.
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Charged-Lepton-Flavour Violation in Kaon Decays in Supersymmetric Theories
Authors:
A. Belyaev,
M. Chizhov,
A. Dorokhov,
J. Ellis,
M. E. Gomez,
S. Lola
Abstract:
We discuss rare kaon decays that violate charged-lepton flavour conservation in supersymmetric theories with and without R parity, in view of possible experiments using an intense proton source as envisaged for a neutrino factory. In the Minimal Supersymmetric Standard Model, such decays are generated by box diagrams involving charginos and neutralinos, but the limits from μ-> e γ, μ-e conversio…
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We discuss rare kaon decays that violate charged-lepton flavour conservation in supersymmetric theories with and without R parity, in view of possible experiments using an intense proton source as envisaged for a neutrino factory. In the Minimal Supersymmetric Standard Model, such decays are generated by box diagrams involving charginos and neutralinos, but the limits from μ-> e γ, μ-e conversion and Δm_K constrain the branching ratios to challengingly small values. However, this is no longer the case in R-violating theories, where such decays may occur at tree level at rates close to the present experimental limits. Within this framework, we obtain bounds on products of LL\bar{E} and LQ\bar{D} operators from the experimental upper limits on K^0 -> μ^\pm e^\mp and K^{\pm,0} -> π^{\pm,0} μ^\pm e^\mp decays. We also note the possibility of like-sign lepton decays K^\pm -> π^\mp \ell^\pm \ell^\pm in the presence of non-zero \tilde{b}_L-\tilde{b}_R mixing. We conclude that rare kaon decays violating charged-lepton flavour conservation could be an interesting signature of R violation.
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Submitted 8 September, 2000; v1 submitted 25 August, 2000;
originally announced August 2000.
