Showing 1–13 of 13 results for author: Beilliard, Y

Versatile CMOS Analog LIF Neuron for Memristor-Integrated Neuromorphic Circuits

Authors: Nikhil Garg, Davide Florini, Patrick Dufour, Eloir Muhr, Mathieu Faye, Marc Bocquet, Damien Querlioz, Yann Beilliard, Dominique Drouin, Fabien Alibart, Jean-Michel Portal

Abstract: Heterogeneous systems with analog CMOS circuits integrated with nanoscale memristive devices enable efficient deployment of neural networks on neuromorphic hardware. CMOS Neuron with low footprint can emulate slow temporal dynamics by operating with extremely low current levels. Nevertheless, the current read from the memristive synapses can be higher by several orders of magnitude, and performing… ▽ More Heterogeneous systems with analog CMOS circuits integrated with nanoscale memristive devices enable efficient deployment of neural networks on neuromorphic hardware. CMOS Neuron with low footprint can emulate slow temporal dynamics by operating with extremely low current levels. Nevertheless, the current read from the memristive synapses can be higher by several orders of magnitude, and performing impedance matching between neurons and synapses is mandatory. In this paper, we implement an analog leaky integrate and fire (LIF) neuron with a voltage regulator and current attenuator for interfacing CMOS neurons with memristive synapses. In addition, the neuron design proposes a dual leakage that could enable the implementation of local learning rules such as voltage-dependent synaptic plasticity. We also propose a connection scheme to implement adaptive LIF neurons based on two-neuron interaction. The proposed circuits can be used to interface with a variety of synaptic devices and process signals of diverse temporal dynamics. △ Less

Submitted 28 June, 2024; originally announced June 2024.

Comments: Accepted to International Conference on Neuromorphic Systems (ICONS 2024)

Robust quantum dots charge autotuning using neural networks uncertainty

Authors: Victor Yon, Bastien Galaup, Claude Rohrbacher, Joffrey Rivard, Clément Godfrin, Roy Li, Stefan Kubicek, Kristiaan De Greve, Louis Gaudreau, Eva Dupont-Ferrier, Yann Beilliard, Roger G. Melko, Dominique Drouin

Abstract: This study presents a machine-learning-based procedure to automate the charge tuning of semiconductor spin qubits with minimal human intervention, addressing one of the significant challenges in scaling up quantum dot technologies. This method exploits artificial neural networks to identify noisy transition lines in stability diagrams, guiding a robust exploration strategy leveraging neural networ… ▽ More This study presents a machine-learning-based procedure to automate the charge tuning of semiconductor spin qubits with minimal human intervention, addressing one of the significant challenges in scaling up quantum dot technologies. This method exploits artificial neural networks to identify noisy transition lines in stability diagrams, guiding a robust exploration strategy leveraging neural networks' uncertainty estimations. Tested across three distinct offline experimental datasets representing different single quantum dot technologies, the approach achieves over 99% tuning success rate in optimal cases, where more than 10% of the success is directly attributable to uncertainty exploitation. The challenging constraints of small training sets containing high diagram-to-diagram variability allowed us to evaluate the capabilities and limits of the proposed procedure. △ Less

Submitted 7 June, 2024; originally announced June 2024.

Comments: 12 pages (main) + 13 pages (supplementary)

MSC Class: 68T37 (Primary); 81V65 (Secondary) ACM Class: I.2.8; I.5.1

Analog programming of CMOS-compatible Al$_2$O$_3$/TiO$_\textrm{2-x}$ memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming

Authors: Pierre-Antoine Mouny, Raphaël Dawant, Bastien Galaup, Serge Ecoffey, Michel Pioro-Ladrière, Yann Beilliard, Dominique Drouin

Abstract: The exploration of memristors' behavior at cryogenic temperatures has become crucial due to the growing interest in quantum computing and cryogenic electronics. In this context, our study focuses on the characterization at cryogenic temperatures (4.2 K) of TiO$_\textrm{2-x}$-based memristors fabricated with a CMOS-compatible etch-back process. We demonstrate a so-called cryogenic reforming (CR) te… ▽ More The exploration of memristors' behavior at cryogenic temperatures has become crucial due to the growing interest in quantum computing and cryogenic electronics. In this context, our study focuses on the characterization at cryogenic temperatures (4.2 K) of TiO$_\textrm{2-x}$-based memristors fabricated with a CMOS-compatible etch-back process. We demonstrate a so-called cryogenic reforming (CR) technique performed at 4.2 K to overcome the well-known metal-insulator transition (MIT) which limits the analog behavior of memristors at low temperatures. This cryogenic reforming process was found to be reproducible and led to a durable suppression of the MIT. This process allowed to reduce by approximately 20% the voltages required to perform DC resistive switching at 4.2 K. Additionally, conduction mechanism studies of memristors before and after cryogenic reforming from 4.2 K to 300 K revealed different behaviors above 100 K, indicating a potential change in the conductive filament stoichiometry. The reformed devices exhibit a conductance level that is 50 times higher than ambient-formed memristor, and the conduction drop between 300 K and 4.2 K is 100 times smaller, indicating the effectiveness of the reforming process. More importantly, CR enables analog programming at 4.2 K with typical read voltages. Suppressing the MIT improved the analog switching dynamics of the memristor leading to approximately 250% larger on/off ratios during long-term depression (LTD)/long-term potentiation (LTP) resistance tuning. This enhancement opens up the possibility of using TiO$_{\textrm{2-x}}$-based memristors to be used as synapses in neuromorphic computing at cryogenic temperatures. △ Less

Submitted 28 July, 2023; originally announced July 2023.

A Cryogenic Memristive Neural Decoder for Fault-tolerant Quantum Error Correction

Authors: Frédéric Marcotte, Pierre-Antoine Mouny, Victor Yon, Gebremedhin A. Dagnew, Bohdan Kulchytskyy, Sophie Rochette, Yann Beilliard, Dominique Drouin, Pooya Ronagh

Abstract: Neural decoders for quantum error correction (QEC) rely on neural networks to classify syndromes extracted from error correction codes and find appropriate recovery operators to protect logical information against errors. Despite the good performance of neural decoders, important practical requirements remain to be achieved, such as minimizing the decoding time to meet typical rates of syndrome ge… ▽ More Neural decoders for quantum error correction (QEC) rely on neural networks to classify syndromes extracted from error correction codes and find appropriate recovery operators to protect logical information against errors. Despite the good performance of neural decoders, important practical requirements remain to be achieved, such as minimizing the decoding time to meet typical rates of syndrome generation in repeated error correction schemes, and ensuring the scalability of the decoding approach as the code distance increases. Designing a dedicated integrated circuit to perform the decoding task in co-integration with a quantum processor appears necessary to reach these decoding time and scalability requirements, as routing signals in and out of a cryogenic environment to be processed externally leads to unnecessary delays and an eventual wiring bottleneck. In this work, we report the design and performance analysis of a neural decoder inference accelerator based on an in-memory computing (IMC) architecture, where crossbar arrays of resistive memory devices are employed to both store the synaptic weights of the decoder neural network and perform analog matrix-vector multiplications during inference. In proof-of-concept numerical experiments supported by experimental measurements, we investigate the impact of TiO$_\textrm{x}$-based memristive devices' non-idealities on decoding accuracy. Hardware-aware training methods are developed to mitigate the loss in accuracy, allowing the memristive neural decoders to achieve a pseudo-threshold of $9.23\times 10^{-4}$ for the distance-three surface code, whereas the equivalent digital neural decoder achieves a pseudo-threshold of $1.01\times 10^{-3}$. This work provides a pathway to scalable, fast, and low-power cryogenic IMC hardware for integrated QEC. △ Less

Submitted 18 July, 2023; originally announced July 2023.

Hardware-aware Training Techniques for Improving Robustness of Ex-Situ Neural Network Transfer onto Passive TiO2 ReRAM Crossbars

Authors: Philippe Drolet, Raphaël Dawant, Victor Yon, Pierre-Antoine Mouny, Matthieu Valdenaire, Javier Arias Zapata, Pierre Gliech, Sean U. N. Wood, Serge Ecoffey, Fabien Alibart, Yann Beilliard, Dominique Drouin

Abstract: Passive resistive random access memory (ReRAM) crossbar arrays, a promising emerging technology used for analog matrix-vector multiplications, are far superior to their active (1T1R) counterparts in terms of the integration density. However, current transfers of neural network weights into the conductance state of the memory devices in the crossbar architecture are accompanied by significant losse… ▽ More Passive resistive random access memory (ReRAM) crossbar arrays, a promising emerging technology used for analog matrix-vector multiplications, are far superior to their active (1T1R) counterparts in terms of the integration density. However, current transfers of neural network weights into the conductance state of the memory devices in the crossbar architecture are accompanied by significant losses in precision due to hardware variabilities such as sneak path currents, biasing scheme effects and conductance tuning imprecision. In this work, training approaches that adapt techniques such as dropout, the reparametrization trick and regularization to TiO2 crossbar variabilities are proposed in order to generate models that are better adapted to their hardware transfers. The viability of this approach is demonstrated by comparing the outputs and precision of the proposed hardware-aware network with those of a regular fully connected network over a few thousand weight transfers using the half moons dataset in a simulation based on experimental data. For the neural network trained using the proposed hardware-aware method, 79.5% of the test set's data points can be classified with an accuracy of 95% or higher, while only 18.5% of the test set's data points can be classified with this accuracy by the regularly trained neural network. △ Less

Submitted 29 May, 2023; originally announced May 2023.

Comments: 15 pages, 11 figures

A tunable and versatile 28nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses

Authors: Joao Henrique Quintino Palhares, Yann Beilliard, Jury Sandrini, Franck Arnaud, Kevin Garello, Guillaume Prenat, Lorena Anghel, Fabien Alibart, Dominique Drouin, Philippe Galy

Abstract: In this work we report a study and a co-design methodology of an analog SNN crossbar output circuit designed in a 28nm FD-SOI technology node that comprises a tunable current attenuator and a leak-integrate and fire neurons that would enable the integration of emerging non-volatile memories (eNVMs) for synaptic arrays based on various technologies including phase change (PCRAM), oxide-based (OxRAM… ▽ More In this work we report a study and a co-design methodology of an analog SNN crossbar output circuit designed in a 28nm FD-SOI technology node that comprises a tunable current attenuator and a leak-integrate and fire neurons that would enable the integration of emerging non-volatile memories (eNVMs) for synaptic arrays based on various technologies including phase change (PCRAM), oxide-based (OxRAM), spin transfer and spin orbit torque magnetic memories (STT, SOT-MRAM). Circuit SPICE simulation results and eNVM experimental data are used to showcase and estimate the neurons fan-in for each type of eNVM considering the technology constraints and design trade-offs that set its limits such as membrane capacitance and supply voltage, etc. △ Less

Submitted 25 May, 2023; originally announced May 2023.

Comments: 7 pages, 6 figures

Voltage-Dependent Synaptic Plasticity (VDSP): Unsupervised probabilistic Hebbian plasticity rule based on neurons membrane potential

Authors: Nikhil Garg, Ismael Balafrej, Terrence C. Stewart, Jean Michel Portal, Marc Bocquet, Damien Querlioz, Dominique Drouin, Jean Rouat, Yann Beilliard, Fabien Alibart

Abstract: This study proposes voltage-dependent-synaptic plasticity (VDSP), a novel brain-inspired unsupervised local learning rule for the online implementation of Hebb's plasticity mechanism on neuromorphic hardware. The proposed VDSP learning rule updates the synaptic conductance on the spike of the postsynaptic neuron only, which reduces by a factor of two the number of updates with respect to standard… ▽ More This study proposes voltage-dependent-synaptic plasticity (VDSP), a novel brain-inspired unsupervised local learning rule for the online implementation of Hebb's plasticity mechanism on neuromorphic hardware. The proposed VDSP learning rule updates the synaptic conductance on the spike of the postsynaptic neuron only, which reduces by a factor of two the number of updates with respect to standard spike-timing-dependent plasticity (STDP). This update is dependent on the membrane potential of the presynaptic neuron, which is readily available as part of neuron implementation and hence does not require additional memory for storage. Moreover, the update is also regularized on synaptic weight and prevents explosion or vanishing of weights on repeated stimulation. Rigorous mathematical analysis is performed to draw an equivalence between VDSP and STDP. To validate the system-level performance of VDSP, we train a single-layer spiking neural network (SNN) for the recognition of handwritten digits. We report 85.01 $ \pm $ 0.76% (Mean $ \pm $ S.D.) accuracy for a network of 100 output neurons on the MNIST dataset. The performance improves when scaling the network size (89.93 $ \pm $ 0.41% for 400 output neurons, 90.56 $ \pm $ 0.27 for 500 neurons), which validates the applicability of the proposed learning rule for spatial pattern recognition tasks. Future work will consider more complicated tasks. Interestingly, the learning rule better adapts than STDP to the frequency of input signal and does not require hand-tuning of hyperparameters △ Less

Submitted 22 October, 2022; v1 submitted 21 March, 2022; originally announced March 2022.

Comments: Front. Neurosci., 21 October 2022 Sec. Neuromorphic Engineering

Journal ref: Front. Neurosci. 16:983950 (2022)

Memristor-based cryogenic programmable DC sources for scalable in-situ quantum-dot control

Authors: Pierre-Antoine Mouny, Yann Beilliard, Sébastien Graveline, Marc-Antoine Roux, Abdelouadoud El Mesoudy, Raphaël Dawant, Pierre Gliech, Serge Ecoffey, Fabien Alibart, Michel Pioro-Ladrière, Dominique Drouin

Abstract: Current quantum systems based on spin qubits are controlled by classical electronics located outside the cryostat at room temperature. This approach creates a major wiring bottleneck, which is one of the main roadblocks toward truly scalable quantum computers. Thus, we propose a scalable memristor-based programmable DC source that could be used to perform biasing of quantum dots inside of the cryo… ▽ More Current quantum systems based on spin qubits are controlled by classical electronics located outside the cryostat at room temperature. This approach creates a major wiring bottleneck, which is one of the main roadblocks toward truly scalable quantum computers. Thus, we propose a scalable memristor-based programmable DC source that could be used to perform biasing of quantum dots inside of the cryostat (i.e. in-situ). This novel cryogenic approach would enable to control the applied voltage on the electrostatic gates by programming the resistance of the memristors, thus storing in the latter the appropriate conditions to form the quantum dots. In this study, we first demonstrate multilevel resistance programming of a TiO2-based memristors at 4.2 K, an essential feature to achieve voltage tunability of the memristor-based DC source. We then report hardwarebased simulations of the electrical performance of the proposed DC source. A cryogenic TiO2-based memristor model fitted on our experimental data at 4.2 K was used to show a 1 V voltage range and 100 uV in-situ memristor-based DC source. Finally, we simulate the biasing of double quantum dots enabling sub-2 minutes in-situ charge stability diagrams. This demonstration is a first step towards more advanced cryogenic applications for resistive memories such as cryogenic control electronics for quantum computers. △ Less

Submitted 22 March, 2022; v1 submitted 14 March, 2022; originally announced March 2022.

Multi-terminal memristive devices enabling tunable synaptic plasticity in neuromorphic hardware: a mini-review

Authors: Yann Beilliard, Fabien Alibart

Abstract: Neuromorphic computing based on spiking neural networks has the potential to significantly improve on-line learning capabilities and energy efficiency of artificial intelligence, specially for edge computing. Recent progress in computational neuroscience have demonstrated the importance of heterosynaptic plasticity for network activity regulation and memorization. Implementing heterosynaptic plast… ▽ More Neuromorphic computing based on spiking neural networks has the potential to significantly improve on-line learning capabilities and energy efficiency of artificial intelligence, specially for edge computing. Recent progress in computational neuroscience have demonstrated the importance of heterosynaptic plasticity for network activity regulation and memorization. Implementing heterosynaptic plasticity in hardware is thus highly desirable, but important materials and engineering challenges remain, calling for breakthroughs in neuromorphic devices. In this mini-review, we propose an overview of the latest advances in multi-terminal memristive devices on silicon with tunable synaptic plasticity, enabling heterosynaptic plasticity in hardware. The scalability and compatibility of the devices with industrial complementary metal oxide semiconductor (CMOS) technologies are discussed. △ Less

Submitted 17 September, 2021; originally announced September 2021.

Comments: 13 pages, 1 figure, 1 table

Journal ref: Frontiers in Nanotechnology - Nanomaterials, 2021

Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing

Authors: Abdelouadoud El Mesoudy, Gwénaëlle Lamri, Raphaël Dawant, Javier Arias-Zapata, Pierre Gliech, Yann Beilliard, Serge Ecoffey, Andreas Ruediger, Fabien Alibart, Dominique Drouin

Abstract: Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current computing paradigms based on traditional von-Neumann architecture. In this regard, interest in developing memristor crossbar arrays has increased due to their ability to natively perform in-memory computing and fundamental synaptic operations required for… ▽ More Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current computing paradigms based on traditional von-Neumann architecture. In this regard, interest in developing memristor crossbar arrays has increased due to their ability to natively perform in-memory computing and fundamental synaptic operations required for neural network implementation. For optimal efficiency, crossbar-based circuits need to be compatible with fabrication processes and materials of industrial CMOS technologies. Herein, we report a complete CMOS-compatible fabrication process of TiO2-based passive memristor crossbars with 700 nm wide electrodes. We show successful bottom electrode fabrication by a damascene process, resulting in an optimised topography and a surface roughness as low as 1.1 nm. DC sweeps and voltage pulse programming yield statistical results related to synaptic-like multilevel switching. Both cycle-to-cycle and device-to-device variability are investigated. Analogue programming of the conductance using sequences of 200 ns voltage pulses suggest that the fabricated memories have a multilevel capacity of at least 3 bits due to the cycle-to-cycle reproducibility. △ Less

Submitted 8 December, 2021; v1 submitted 22 June, 2021; originally announced June 2021.

Comments: 18 pages, 4 figures in main text, 5 figures in SI

Signals to Spikes for Neuromorphic Regulated Reservoir Computing and EMG Hand Gesture Recognition

Authors: Nikhil Garg, Ismael Balafrej, Yann Beilliard, Dominique Drouin, Fabien Alibart, Jean Rouat

Abstract: Surface electromyogram (sEMG) signals result from muscle movement and hence they are an ideal candidate for benchmarking event-driven sensing and computing. We propose a simple yet novel approach for optimizing the spike encoding algorithm's hyper-parameters inspired by the readout layer concept in reservoir computing. Using a simple machine learning algorithm after spike encoding, we report perfo… ▽ More Surface electromyogram (sEMG) signals result from muscle movement and hence they are an ideal candidate for benchmarking event-driven sensing and computing. We propose a simple yet novel approach for optimizing the spike encoding algorithm's hyper-parameters inspired by the readout layer concept in reservoir computing. Using a simple machine learning algorithm after spike encoding, we report performance higher than the state-of-the-art spiking neural networks on two open-source datasets for hand gesture recognition. The spike encoded data is processed through a spiking reservoir with a biologically inspired topology and neuron model. When trained with the unsupervised activity regulation CRITICAL algorithm to operate at the edge of chaos, the reservoir yields better performance than state-of-the-art convolutional neural networks. The reservoir performance with regulated activity was found to be 89.72% for the Roshambo EMG dataset and 70.6% for the EMG subset of sensor fusion dataset. Therefore, the biologically-inspired computing paradigm, which is known for being power efficient, also proves to have a great potential when compared with conventional AI algorithms. △ Less

Submitted 3 August, 2021; v1 submitted 9 June, 2021; originally announced June 2021.

Comments: Accepted to International Conference on Neuromorphic Systems (ICONS 2021)

Observation of Highly Nonlinear Resistive Switching of Al2O3/TiO2-x Memristors at Cryogenic Temperature (1.5 K)

Authors: Yann Beilliard, François Paquette, Frédéric Brousseau, Serge Ecoffey, Fabien Alibart, Dominique Drouin

Abstract: In this work, we investigate the behavior of Al2O3/TiO2-x cross-point memristors in cryogenic environment. We report successful resistive switching of memristor devices from 300 K down to 1.5 K. The I-V curves exhibit negative differential resistance effects between 130 and 1.5 K, attributed to a metal-insulator transition (MIT) of the Ti4O7 conductive filament. The resulting highly nonlinear beha… ▽ More In this work, we investigate the behavior of Al2O3/TiO2-x cross-point memristors in cryogenic environment. We report successful resistive switching of memristor devices from 300 K down to 1.5 K. The I-V curves exhibit negative differential resistance effects between 130 and 1.5 K, attributed to a metal-insulator transition (MIT) of the Ti4O7 conductive filament. The resulting highly nonlinear behavior is associated to a maximum ION/IOFF ratio of 84 at 1.5 K, paving the way to selector-free cryogenic passive crossbars. Finally, temperature-dependant thermal activation energies related to the conductance at low bias (20 mV) are extracted for memristors in low resistance state, suggesting hopping-type conduction mechanisms. △ Less

Submitted 10 September, 2019; v1 submitted 15 August, 2019; originally announced August 2019.

Comments: 4 pages, 4 figures, IEEE 14th Nanotechnology Materials & Devices Conference (NMDC 2019)

Journal ref: AIP Advances 10, 025305 (2020)

FPGA-based Multi-Chip Module for High-Performance Computing

Authors: Yann Beilliard, Maxime Godard, Aggelos Ioannou, Astrinos Damianakis, Michael Ligerakis, Iakovos Mavroidis, Pierre-Yves Martinez, David Danovitch, Julien Sylvestre, Dominique Drouin

Abstract: Current integration, architectural design and manufacturing technologies are not suited for the computing density and power efficiency requested by Exascale computing. New approaches in hardware architecture are thus needed to overcome the technological barriers preventing the transition to the Exascale era. In that scope, we report successful fabrication of first ExaNoDe's MCM prototypes dedicate… ▽ More Current integration, architectural design and manufacturing technologies are not suited for the computing density and power efficiency requested by Exascale computing. New approaches in hardware architecture are thus needed to overcome the technological barriers preventing the transition to the Exascale era. In that scope, we report successful fabrication of first ExaNoDe's MCM prototypes dedicated to Exascale computing applications. Each MCM was composed of 2 Xilinx Zynq Ultrascale+ MPSoC, assembled on advanced 68.5 mm x 55 mm laminate substrates specifically designed and fabricated for the project. Acoustic microscopy, x-ray, cross-section and Thermo-Moire investigations revealed no voids, shorts, delamination, cracks or warpage issues. Two MCMs were mounted on a daughter board by FORTH for testing purposes. The DDR memories on the 4 SODIMMs of the daughter board were successfully tested by running extensive Xilinx memory tests with clock frequencies of 1866 MHz and 2133 MHz. All 4 FPGAs were programmed with the Xilinx integrated bit error ratio test (IBERT) tailored for this board for links testing. All intra-board high-speed links between all FPGAs were stable at 10 Gbps, even under the more demanding 31-bit PRBS (Pseudorandom Binary Sequence) tests. △ Less

Submitted 26 June, 2019; originally announced June 2019.

Comments: HiPEAC 2019 - ExaNoDe Workshop