Showing 1–24 of 24 results for author: Tan, Q

Observation of Ferromagnetic Phase in the Second Moiré Band of Twisted MoTe2

Authors: Liheng An, Haiyang Pan, Wen-Xuan Qiu, Naizhou Wang, Shihao Ru, Qinghai Tan, Xuran Dai, Xiangbin Cai, Qiuyu Shang, Xiufang Lu, Hao Jiang, Xiaodan Lyu, Kenji Watanabe, Takashi Taniguchi, Fengcheng Wu, Wei-bo Gao

Abstract: Flat bands and electron correlation in moiré lattices give rise to many exotic phases, including Mott insulators, superconductivity, and topological states. Within the first moiré band, integer and fractional quantum anomalous Hall effects have been observed in twisted bilayer MoTe2 (tMoTe2) at one hole doping and fractional doping per moiré unit cell, respectively. When the second moiré band is f… ▽ More Flat bands and electron correlation in moiré lattices give rise to many exotic phases, including Mott insulators, superconductivity, and topological states. Within the first moiré band, integer and fractional quantum anomalous Hall effects have been observed in twisted bilayer MoTe2 (tMoTe2) at one hole doping and fractional doping per moiré unit cell, respectively. When the second moiré band is fully hole doped, quantum spin Hall insulator has also been reported in tMoTe2 at a certain twist angle. Exotic topological states together with ferromagnetic (FM) states in the high moiré band can potentially exist as well. In this study, we report the observation of a FM phase in the second moiré band in tMoTe2. The FM phase can be tuned by both the doping level and displacement field. At filling around 2.58 holes per moiré unit cell, the FM phase reaches a Curie temperature of 3.5 K. A large displacement field can suppress the FM phase, like the FM phase at the filling of -1. Our results demonstrate the realization of time-reversal symmetry-breaking states in the higher moiré bands in tMoTe2. △ Less

Submitted 18 July, 2024; originally announced July 2024.

Comments: Main text: 13 pages, 5 figures. Supplementary: 11 pages, 15 figures

Revealing the Electronic Structure of NiPS$_3$ through Synchrotron-Based ARPES and Alkali Metal Dosing

Authors: Yifeng Cao, Qishuo Tan, Yucheng Guo, Clóvis Guerim Vieira, Mário S. C. Mazzon, Jude Laverock, Nicholas Russo, Hongze Gao, Chris Jozwiak, Aaron Bostwick, Eli Rotenberg, Jinghua Guo, Ming Yi, Matheus J. S. Matos, Xi Ling, Kevin E. Smith

Abstract: This study presents a comprehensive analysis of the band structure in NiPS$_3$, a van der Waals layered antiferromagnet, utilizing high-resolution synchrotron-based angle-resolved photoemission spectroscopy (ARPES) and corroborative density functional theory (DFT) calculations. By tuning the parameters of the light source, we obtained a very clear and wide energy range band structure of NiPS$_3$.… ▽ More This study presents a comprehensive analysis of the band structure in NiPS$_3$, a van der Waals layered antiferromagnet, utilizing high-resolution synchrotron-based angle-resolved photoemission spectroscopy (ARPES) and corroborative density functional theory (DFT) calculations. By tuning the parameters of the light source, we obtained a very clear and wide energy range band structure of NiPS$_3$. Comparison with DFT calculations allows for the identification of the orbital character of the observed bands. Our DFT calculations perfectly match the experimental results, and no adaptations were made to the calculations based on the experimental outcomes. The appearance of novel electronic structure upon alkali metal dosing (AMD) were also obtained in this ARPES study. Above valence band maximum, structure of conduction bands and bands from defect states were firstly observed in NiPS$_3$. We provide the direct determination of the band gap of NiPS$_3$ as 1.3 eV from the band structure by AMD. In addition, detailed temperature dependent ARPES spectra were obtained across a range that spans both below and above the Néel transition temperature of NiPS$_3$. We found that the paramagnetic and antiferromagnetic states have almost identical spectra, indicating the highly localized nature of Ni $d$ states. △ Less

Submitted 2 July, 2024; originally announced July 2024.

Comments: 4 figures

Spectral evidence for NiPS3 as a Mott-Hubbard insulator

Authors: Yifeng Cao, Nicholas Russo, Qishuo Tan, Xi Ling, Jinghua Guo, Yi-de Chuang, Kevin E. Smith

Abstract: The layered van der Waals trichalcogenide NiPS3 has attracted widespread attention due to its unique optical, magnetic, and electronic properties. The complexity of NiPS3 itself, however, has also led to ongoing debates regarding its characteristics such as the existence of self-doped ligand holes. In this study, X-ray absorption spectroscopy and resonant inelastic X-ray scattering have been appli… ▽ More The layered van der Waals trichalcogenide NiPS3 has attracted widespread attention due to its unique optical, magnetic, and electronic properties. The complexity of NiPS3 itself, however, has also led to ongoing debates regarding its characteristics such as the existence of self-doped ligand holes. In this study, X-ray absorption spectroscopy and resonant inelastic X-ray scattering have been applied to investigate the electronic structure of NiPS3. With the aid of theoretical calculations using the charge-transfer multiplet model, we provide experimental evidence for NiPS3 being a Mott-Hubbard insulator rather than a charge-transfer insulator. Moreover, we explain why some previous XAS studies have concluded that NiPS3 is a charge-transfer insulator by comparing surface and bulk sensitive spectra. △ Less

Submitted 1 July, 2024; originally announced July 2024.

Comments: 6 figures

Observation of three-state nematicity and domain evolution in atomically-thin antiferromagnetic NiPS3

Authors: Qishuo Tan, Connor A. Occhialini, Hongze Gao, Jiaruo Li, Hikari Kitadai, Riccardo Comin, Xi Ling

Abstract: Nickel phosphorus trisulfide (NiPS3), a van der Waals (vdW) 2D antiferromagnet, has captivated enormous attention for its intriguing physics in recent years. However, despite its fundamental importance in physics of magnetism and promising potential for technological applications, the study of magnetic domains in NiPS3 down to atomically thin is still lacking. Here, we report the layer-dependent m… ▽ More Nickel phosphorus trisulfide (NiPS3), a van der Waals (vdW) 2D antiferromagnet, has captivated enormous attention for its intriguing physics in recent years. However, despite its fundamental importance in physics of magnetism and promising potential for technological applications, the study of magnetic domains in NiPS3 down to atomically thin is still lacking. Here, we report the layer-dependent magnetic characteristics and magnetic domains within antiferromagnetic NiPS3 by employing linear dichroism (LD) combined with polarized microscopy, spin-correlated photoluminescence (PL), and Raman spectroscopy. Our results reveal the existence of the paramagnetic-to-antiferromagnetic phase transition in bulk to bilayer NiPS3 with stronger spin fluctuation in thinner NiPS3. Furthermore, our study identifies three distinct antiferromagnetic domains within atomicallythin NiPS3 and captures the thermally-activated domain evolution. Our findings provide crucial insights for the development of antiferromagnetic spintronics and related technologies. △ Less

Submitted 27 February, 2024; v1 submitted 20 November, 2023; originally announced November 2023.

Imaging Strain-Localized Single-Photon Emitters in Layered GaSe below the Diffraction Limit

Authors: Weijun Luo, Benjamin Lawrie, Alexander Puretzky, Qishuo Tan, Gage Eichman, Edward Mcgee, Anna Swan, Liangbo Liang, Xi Ling

Abstract: Nanoscale strain control of exciton funneling is an increasingly critical tool for the scalable production of single photon emitters (SPEs) in two-dimensional materials. However, conventional far-field optical microscopies remain constrained in spatial resolution by the diffraction limit and thus can only provide a limited description of nanoscale strain localization of SPEs. Here, we quantify the… ▽ More Nanoscale strain control of exciton funneling is an increasingly critical tool for the scalable production of single photon emitters (SPEs) in two-dimensional materials. However, conventional far-field optical microscopies remain constrained in spatial resolution by the diffraction limit and thus can only provide a limited description of nanoscale strain localization of SPEs. Here, we quantify the effects of nanoscale heterogeneous strain on the energy and brightness of GaSe SPEs on nanopillars with correlative cathodoluminescence, photoluminescence, and atomic force microscopies supported by density functional theory simulations. We report the strain-localized SPEs have a broad range of emission wavelengths from 620 nm to 900 nm. We reveal substantial strain-controlled SPE wavelength tunability over a ~ 100 nm spectral range and two-orders of magnitude enhancement in the SPE brightness at the pillar center due to Type-I exciton funneling. In addition, we show that radiative biexciton cascade processes contribute to the observed CL photon superbunching. Also, the measured GaSe SPE photophysics after electron beam exposure shows the excellent stability of these SPEs. We anticipate this insight into nanoscale strain control of two-dimensional SPEs will guide the development of truly deterministic quantum photonics. △ Less

Submitted 4 May, 2023; originally announced May 2023.

Interlayer donor-acceptor pair excitons in MoSe2/WSe2 moiré heterobilayer

Authors: Hongbing Cai, Abdullah Rasmita, Qinghai Tan, Jia-Min Lai, Ruihua He, Disheng Chen, Naizhou Wang, Zhao Mu, Zumeng Huang, Zhaowei Zhang, John J. H. Eng, Yuanda Liu, Yongzhi She, Nan Pan, Xiaoping Wang, Xiaogang Liu, Jun Zhang, Weibo Gao

Abstract: Localized interlayer excitons (LIXs) in two-dimensional moiré superlattices exhibit sharp and dense emission peaks, making them promising as highly tunable single-photon sources. However, the fundamental nature of these LIXs is still elusive. Here, we show the donor-acceptor pair (DAP) mechanism as one of the origins of these excitonic peaks. Numerical simulation results of the DAP model agree wit… ▽ More Localized interlayer excitons (LIXs) in two-dimensional moiré superlattices exhibit sharp and dense emission peaks, making them promising as highly tunable single-photon sources. However, the fundamental nature of these LIXs is still elusive. Here, we show the donor-acceptor pair (DAP) mechanism as one of the origins of these excitonic peaks. Numerical simulation results of the DAP model agree with the experimental photoluminescence spectra of LIX in the moiré MoSe2/WSe2 heterobilayer. In particular, we find that the emission energy-lifetime correlation and the nonmonotonic power dependence of the lifetime agree well with the DAP IX model. Our results provide insight into the physical mechanism of LIX formation in moiré heterostructures and pave new directions for engineering interlayer exciton properties in moiré superlattices. △ Less

Submitted 25 February, 2023; originally announced February 2023.

Van der Waals device integration beyond the limits of van der Waals forces via adhesive matrix transfer

Authors: Peter F. Satterthwaite, Weikun Zhu, Patricia Jastrzebska-Perfect, Melbourne Tang, Hongze Gao, Hikari Kitadai, Ang-Yu Lu, Qishuo Tan, Shin-Yi Tang, Yu-Lun Chueh, Chia-Nung Kuo, Chin Shan Lue, Jing Kong, Xi Ling, Farnaz Niroui

Abstract: Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and other materials are core to emerging optical and electronic devices. Their direct fabrication is, however, challenged as the vdW forces are weak and cannot be tuned to accommodate integration of arbitrary layers without solvents, sacrificial-layers or high-temperatures, steps that can introduce damage. To address these limita… ▽ More Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and other materials are core to emerging optical and electronic devices. Their direct fabrication is, however, challenged as the vdW forces are weak and cannot be tuned to accommodate integration of arbitrary layers without solvents, sacrificial-layers or high-temperatures, steps that can introduce damage. To address these limitations, we introduce a single-step 2D material-to-device integration approach in which forces promoting transfer are decoupled from the vdW forces at the interface of interest. We use this adhesive matrix transfer to demonstrate conventionally-forbidden direct integration of diverse 2D materials (MoS2, WSe2, PtS2, GaS) with dielectrics (SiO2, Al2O3), and scalable, aligned heterostructure formation, both foundational to device development. We then demonstrate a single-step integration of monolayer-MoS2 into arrays of transistors. With no exposure to polymers or solvents, clean interfaces and pristine surfaces are preserved, which can be further engineered to demonstrate both n- and p-type behavior. Beyond serving as a platform to probe the intrinsic properties of sensitive nanomaterials without the influence of processing steps, our technique allows efficient formation of unconventional device form-factors, with an example of flexible transistors demonstrated. △ Less

Submitted 12 February, 2023; originally announced February 2023.

Deterministic Localization of Strain-induced Single-photon Emitters in Multilayer GaSe

Authors: Weijun Luo, Alexander Puretzky, Benjamin Lawrie, Qishuo Tan, Hongze Gao, Zhuofa Chen, Alexander Sergienko, Anna Swan, Liangbo Liang, Xi Ling

Abstract: Nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs)(1, 2). However, quantum emitters in monolayer TMDCs are typically unstable in ambient conditions. Multilayer two-dimensional (2D) TMDCs could be a solution, but they suffer from low quantum efficiency, resulting in low brightness of the SPEs. Her… ▽ More Nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs)(1, 2). However, quantum emitters in monolayer TMDCs are typically unstable in ambient conditions. Multilayer two-dimensional (2D) TMDCs could be a solution, but they suffer from low quantum efficiency, resulting in low brightness of the SPEs. Here, we report the deterministic spatial localization of strain-induced single-photon emitters in multilayer GaSe by nanopillar arrays. The strain-controlled quantum confinement effect introduces well-isolated sub-bandgap photoluminescence and corresponding suppression of the broad band edge photoluminescence. Clear photon-antibunching behavior is observed from the quantum dot-like GaSe sub-bandgap exciton emission at 3.5 Kelvin. The strain-dependent confinement potential and the brightness are found to be strongly correlated, suggesting a promising route for tuning and controlling SPEs. The comprehensive investigations of strain-engineered GaSe SPEs provide a solid foundation for the development of 2D devices for quantum photonic technologies. △ Less

Submitted 27 October, 2022; originally announced October 2022.

Comments: 18 pages, 4 figures in the maintext; 21 figures in the supporting information

Color-Tunable Mixed-Cation Perovskite Single Photon Emitters

Authors: Marianna D'Amato, Qi Ying Tan, Quentin Glorieux, Alberto Bramati, Cesare Soci

Abstract: Quantum photonics technologies like wavelength division multiplexing (WDM) for high-rate quantum key distribution require narrowband, spectrally tunable single photon emitters. Physical methods that rely on the application of large mechanical strain to epitaxial quantum dots or electric and magnetic fields to color centers in 2D metal dichalcogenides provide limited spectral tunability. Here we ad… ▽ More Quantum photonics technologies like wavelength division multiplexing (WDM) for high-rate quantum key distribution require narrowband, spectrally tunable single photon emitters. Physical methods that rely on the application of large mechanical strain to epitaxial quantum dots or electric and magnetic fields to color centers in 2D metal dichalcogenides provide limited spectral tunability. Here we adopt a chemical approach to synthesize a family of colloidal mixed-cation perovskite quantum dots ($\text{Cs}_{1-x}\text{FA}_{x}\text{PbBr}_3$) that show highly photo-stable, compositionally tunable single photon emission at room temperature - spanning more than 30 nm in the visible wavelength spectral range. We find that, tailoring the stoichiometry of the organic formamidinium (FA) cation in all-inorganic cesium lead bromide ($\text{CsPbBr}_3$) perovskite quantum dots detunes the electronic band structure while preserving their excellent single photon emission characteristics. We argue that the mixed-cation perovskite quantum dots studied in this work offer a new platform for the realization of color-tunable single photon emitters that could be readily integrated in a diversity of quantum photonic devices. △ Less

Submitted 7 July, 2022; originally announced July 2022.

Optical signature of cascade transitions between moiré interlayer excitons

Authors: Qinghai Tan, Abdullah Rasmita, Zhaowei Zhang, K. S. Novoselov, Wei-bo Gao

Abstract: Cascade transition between energy levels has important applications, such as in quantum information protocols and quantum cascade lasers. In two-dimensional heterostructure, the moiré superlattice potential can result in multiple interlayer exciton (IX) energy levels. We demonstrate the cascade transitions between such moiré IXs by performing time- and energy-resolved photoluminescence measurement… ▽ More Cascade transition between energy levels has important applications, such as in quantum information protocols and quantum cascade lasers. In two-dimensional heterostructure, the moiré superlattice potential can result in multiple interlayer exciton (IX) energy levels. We demonstrate the cascade transitions between such moiré IXs by performing time- and energy-resolved photoluminescence measurements. We show that the lower-energy moiré IX can be excited to higher-energy ones, facilitating IX population inversion. △ Less

Submitted 21 February, 2022; originally announced February 2022.

In-situ synchrotron based high energy X-ray diffraction study of the deformation mechanism of δ-hydride in a commercially pure titanium

Authors: Qing Tan, Zhiran Yan, Runguang Li, Yang Ren, Yandong Wang, Baptiste Gault, Stoichko Antonov

Abstract: We used by in-situ high energy X-ray diffraction to inestigate the deformation behavior of Grade 2 commercially pure titanium that was hydrogen charged to form hydrides. The results showed that the peak broadening in the diffraction patterns are due to the high internal and interphase stresses generated within and around hydrides due to the volume expansion induced by the phase transformation. The… ▽ More We used by in-situ high energy X-ray diffraction to inestigate the deformation behavior of Grade 2 commercially pure titanium that was hydrogen charged to form hydrides. The results showed that the peak broadening in the diffraction patterns are due to the high internal and interphase stresses generated within and around hydrides due to the volume expansion induced by the phase transformation. The hydrides exhibit typical high strength but brittle secondary phase behavior, which undertakes more elastic strain than matrix and is the location where cracks are first generated. Interestingly, the δ-hydrides sustain larger strains than the matrix, especially after the matrix yields. This study on the deformation mechanism of hydrides in pure titanium provides insight into the hydride deformation behavior and hydrogen embrittlement in both titanium and zirconium. △ Less

Submitted 25 January, 2022; originally announced January 2022.

The role of \b{eta} pockets resulting from Fe impurities in hydride formation in titanium

Authors: Qing Tan, Zhiran Yan, Huijun Wang, David Dye, Stoichko Antonov, Baptiste Gault

Abstract: The corrosion potential of commercially pure titanium in NaCl solutions is dramatically affected by trace Fe additions, which cause the appearance of submicron pockets of \b{eta} phase at grain boundary triple points. Furthermore, the low solubility of hydrogen in hexagonal close-packed α-Ti makes titanium alloys prone to subsequent hydride-associated failures due to stress corrosion cracking. We… ▽ More The corrosion potential of commercially pure titanium in NaCl solutions is dramatically affected by trace Fe additions, which cause the appearance of submicron pockets of \b{eta} phase at grain boundary triple points. Furthermore, the low solubility of hydrogen in hexagonal close-packed α-Ti makes titanium alloys prone to subsequent hydride-associated failures due to stress corrosion cracking. We analyzed α-α and α-\b{eta} sections of the abutting grain boundary of a \b{eta} pocket in a Grade 2 CP-Ti, and the α-\b{eta} phase boundary. Fe and H partition to \b{eta} and segregate at the grain boundary, but no segregation is seen at the α-\b{eta} phase boundary. In contrast, a significant Ni (>1 at%) accumulation is observed at the α-\b{eta} phase boundary. We propose that the \b{eta}-pockets act as hydrogen traps and facilitate the nucleation and growth of hydrides along grain boundaries in CP-Ti. △ Less

Submitted 5 January, 2022; originally announced January 2022.

Room-temperature bipolar valleytronic transistor in MoS2/WSe2 heterostructures

Authors: Chongyun Jiang, Abdullah Rasmita, Hui Ma, Qinghai Tan, Zumeng Huang, Shen Lai, Sheng Liu, Xue Liu, Qihua Xiong, Wei-bo Gao

Abstract: Valley degree of freedom in the 2D semiconductor is a promising platform for the next generation optoelectronics. Electrons in different valleys can have opposite Berry curvature, leading to the valley Hall effect (VHE). However, VHE without the plasmonic structure's assistance has only been reported in cryogenic temperature, limiting its practical application. Here, we report the observation of V… ▽ More Valley degree of freedom in the 2D semiconductor is a promising platform for the next generation optoelectronics. Electrons in different valleys can have opposite Berry curvature, leading to the valley Hall effect (VHE). However, VHE without the plasmonic structure's assistance has only been reported in cryogenic temperature, limiting its practical application. Here, we report the observation of VHE at room temperature in the MoS2/WSe2 heterostructures. We also uncover that both the magnitude and the polarity of the VHE in the 2D heterostructure is gate tunable. We attribute this to the opposite VHE contribution from the electron and hole in different layers. These results indicate the bipolar transport nature of our valleytronic transistor. Utilizing this gate tunability, we demonstrate a bipolar valleytronic transistor. Our results can be used to improve the ON/OFF ratio of the valleytronic transistor and to realize more versatile valleytronics logic circuits. △ Less

Submitted 7 February, 2021; originally announced February 2021.

Comments: 34 pages, 16 figures

Layer engineered interlayer excitons

Authors: Qinghai Tan, Abdullah Rasmita, Si Li, Sheng Liu, Zumeng Huang, Qihua Xiong, Shengyuan A. Yang, K. S. Novoselov, Wei-bo Gao

Abstract: Photoluminescence (PL) from excitons serves as a powerful tool to characterize the optoelectronic property and band structure of semiconductors, especially for atomically thin 2D transition metal chalcogenide (TMD) materials. However, PL quenches quickly when the thickness of TMD material increases from monolayer to few-layers, due to the change from direct to indirect band transition. Here we sho… ▽ More Photoluminescence (PL) from excitons serves as a powerful tool to characterize the optoelectronic property and band structure of semiconductors, especially for atomically thin 2D transition metal chalcogenide (TMD) materials. However, PL quenches quickly when the thickness of TMD material increases from monolayer to few-layers, due to the change from direct to indirect band transition. Here we show that PL can be recovered by engineering multilayer heterostructures, with the band transition reserved to be direct type. We report emission from layer engineered interlayer excitons from these multilayer heterostructures. Moreover, as desired for valleytronic devices, the lifetime, valley polarization, and the valley lifetime of the generated interlayer excitons can all be significantly improved as compared with that in the monolayer-monolayer heterostructure. Our results pave the way for controlling the properties of interlayer excitons by layer engineering. △ Less

Submitted 6 February, 2021; v1 submitted 27 November, 2019; originally announced November 2019.

Comments: 5 Figures in main text

Journal ref: Science Advances (2021)

Magnetic Proximity Effect in 2D Ferromagnetic CrBr3/Graphene van der Waals Heterostructures

Authors: Chaolong Tang, Zhaowei Zhang, Shen Lai, Qinghai Tan, Wei-bo Gao

Abstract: Two-dimensional (2D) van der Waals heterostructures serve as a promising platform to exploit various physical phenomena in a diverse range of novel spintronic device applications. The efficient spin injection is the prerequisite for these devices. The recent discovery of magnetic 2D materials leads to the possibility of fully 2D van der Waals spintronics devices by implementing spin injection thro… ▽ More Two-dimensional (2D) van der Waals heterostructures serve as a promising platform to exploit various physical phenomena in a diverse range of novel spintronic device applications. The efficient spin injection is the prerequisite for these devices. The recent discovery of magnetic 2D materials leads to the possibility of fully 2D van der Waals spintronics devices by implementing spin injection through magnetic proximity effect (MPE). Here, we report the investigation of magnetic proximity effect in 2D CrBr3/graphene van der Waals heterostructures, which is probed by Zeeman spin Hall effect through non-local measurements. Zeeman splitting field estimation demonstrates a significant magnetic proximity exchange field even in a low magnetic field. Furthermore, the observed anomalous longitudinal resistance changes at the Dirac point R_(XX,D)with increasing magnetic field at ν = 0 may attribute to the MPE induced new ground state phases. This MPE revealed in our CrBr3/graphene van der Waals heterostructures therefore provides a solid physics basis and key functionality for next generation 2D spin logic and memory devices. △ Less

Submitted 23 October, 2019; originally announced October 2019.

Comments: 31 pages, 9 figures

Observation of Fano resonance in photoluminescence of a two-dimensional magnetic semiconductor

Authors: Pingfan Gu, Qinghai Tan, Yi Wan, Ziling Li, Yuxuan Peng, Jiawei Lai, Junchao Ma, Xiaohan Yao, Kai Yuan, Dong Sun, Bo Peng, Jun Zhang, Yu Ye

Abstract: Quantum interference gives rise to the asymmetric Fano resonance line shape when the final states of an electronic transition follows within a continuum of states and a discrete state, which has significant applications in optical switching and sensing. The resonant optical phenomena associated with Fano resonance have been observed by absorption spectra, Raman spectra, transmission spectra, etc.,… ▽ More Quantum interference gives rise to the asymmetric Fano resonance line shape when the final states of an electronic transition follows within a continuum of states and a discrete state, which has significant applications in optical switching and sensing. The resonant optical phenomena associated with Fano resonance have been observed by absorption spectra, Raman spectra, transmission spectra, etc., but have rarely been reported in photoluminescence (PL) spectroscopy. In this work, we performed spectroscopic studies on layered chromium thiophosphate (CrPS4), a promising ternary antiferromagnetic semiconductor with PL in near-infrared wavelength region and observed Fano resonance when CrPS4 experiences phase transition into the antiferromagnetic state below Néel temperature (38 K). The photoluminescence of the continuum states results from the d band transitions localized at Cr3+ ions, while the discrete state reaches saturation at high excitation power and can be enhanced by the external magnetic field, suggesting it is formed by an impurity level from extra atomic phosphorus. Our findings provide insights into the electronic transitions of CrPS4 and their connection to its intrinsic magnetic properties. △ Less

Submitted 11 October, 2019; originally announced October 2019.

Comments: 16 pages, 4 figures

Breakdown of Raman Selection Rules By Fröhlich Interaction in Few-Layer WS$_2$

Authors: Qing-Hai Tan, Kai-Xuan Xu, Yu-Jia Sun, Xue-Lu Liu, Yuan-Fei Gao, Shu-Liang Ren, Ping-Heng Tan, Jun Zhang

Abstract: The Raman selection rules arise from the crystal symmetry and then determine the Raman activity and polarization of scattered phonon modes. However, these selection rules can be broken in resonant process due to the strong electron-phonon coupling effect. Here we reported the observation of breakdown of Raman selection rules in few-layer WS$_2$ by using resonant Raman scattering with dark A excito… ▽ More The Raman selection rules arise from the crystal symmetry and then determine the Raman activity and polarization of scattered phonon modes. However, these selection rules can be broken in resonant process due to the strong electron-phonon coupling effect. Here we reported the observation of breakdown of Raman selection rules in few-layer WS$_2$ by using resonant Raman scattering with dark A exciton. In this case, not only the infrared active modes and backscattering forbidden modes are observed, but the intensities of all observed phonon modes become strongest under paralleled-polarization and independent on the Raman tensors of phonons. We attributed this phenomenon to the interaction between dark A exciton and the scatted phonon, the so-called intraband Fröhlich interaction, where the Raman scattering possibility is totally determined by the symmetry of exciton rather than the phonons due to strong electron-phonon coupling. Our results not only can be used to easily detect the optical forbidden excitonic and phononic states but also provide a possible way to manipulate optical transitions between electronic levels. △ Less

Submitted 31 October, 2019; v1 submitted 19 August, 2019; originally announced August 2019.

Comments: 3 Figures

Journal ref: Nano Research, 2021

Robust Ultraviolet to Near-infrared Quantum Emitters in Hexagonal Boron Nitride up to 1100 K

Authors: Qing-Hai Tan, Jia-Min Lai, Xue-Lu Liu, Yong-Zhou Xue, Xiu-Ming Dou, Bao-Quan Sun, Wei-Bo Gao, Ping-Heng Tan, Jun Zhang

Abstract: A stable single-photon source working at high temperatures with high brightness and covering full band emission from one host material is critically important for quantum technologies. Here, we find that the certain hBN single-photon emissions (SPEs) can be significantly enhanced by lasers with special wavelengths, which largely broaden the wavelength range of the hBN emitters, down to ultraviolet… ▽ More A stable single-photon source working at high temperatures with high brightness and covering full band emission from one host material is critically important for quantum technologies. Here, we find that the certain hBN single-photon emissions (SPEs) can be significantly enhanced by lasers with special wavelengths, which largely broaden the wavelength range of the hBN emitters, down to ultraviolet (357 nm) and up to near-infrared (912 nm). Importantly, these hBN SPEs are still stable even at the temperature up to 1100 Kelvin. The decoupling between single-photon and acoustic phonon is observed at high temperatures. Our work suggests that hBN can be a good host material for generating single-photon sources with ultrabroad wavelength range. △ Less

Submitted 31 October, 2021; v1 submitted 18 August, 2019; originally announced August 2019.

Comments: 4 Figures

Near-Heisenberg-limited parameter estimation precision by a dipolar-Bose-gas reservoir engineering

Authors: Qing-Shou Tan, Ji-Bing Yuan, Guang-Ri Jin, Le-Man Kuang

Abstract: We propose a scheme to obtain the Heisenberg-limited parameter estimation precision by immersing atoms in a thermally equilibrated quasi-one-dimensional dipolar Bose-Einstein condensate reservoir. We show that the collisions between the dipolar atoms and the immersed atoms can result in a controllable nonlinear interaction through tuning the relative strength and the sign of the dipolar and contac… ▽ More We propose a scheme to obtain the Heisenberg-limited parameter estimation precision by immersing atoms in a thermally equilibrated quasi-one-dimensional dipolar Bose-Einstein condensate reservoir. We show that the collisions between the dipolar atoms and the immersed atoms can result in a controllable nonlinear interaction through tuning the relative strength and the sign of the dipolar and contact interaction. We find that the repulsive dipolar interaction reservoir is preferential for the spin squeezing and the appearance of an entangled non-Gaussian state. As a useful resource for quantum metrology, we also show that the non-Gaussian state results in the phase estimation precision in the Heisenberg scaling, outperforming that of the spin-squeezed state. △ Less

Submitted 2 January, 2018; originally announced January 2018.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. A 96, 063614 (2017)

Observation of forbidden phonons and dark excitons by resonance Raman scattering in few-layer WS$_2$

Authors: Qing-Hai Tan, Yu-Jia Sun, Xue-Lu Liu, Yanyuan Zhao, Qihua Xiong, Ping-Heng Tan, Jun Zhang

Abstract: The optical properties of the two-dimensional (2D) crystals are dominated by tightly bound electron-hole pairs (excitons) and lattice vibration modes (phonons). The exciton-phonon interaction is fundamentally important to understand the optical properties of 2D materials and thus help develop emerging 2D crystal based optoelectronic devices. Here, we presented the excitonic resonant Raman scatteri… ▽ More The optical properties of the two-dimensional (2D) crystals are dominated by tightly bound electron-hole pairs (excitons) and lattice vibration modes (phonons). The exciton-phonon interaction is fundamentally important to understand the optical properties of 2D materials and thus help develop emerging 2D crystal based optoelectronic devices. Here, we presented the excitonic resonant Raman scattering (RRS) spectra of few-layer WS$_2$ excited by 11 lasers lines covered all of A, B and C exciton transition energies at different sample temperatures from 4 to 300 K. As a result, we are not only able to probe the forbidden phonon modes unobserved in ordinary Raman scattering, but also can determine the bright and dark state fine structures of 1s A exciton. In particular, we also observed the quantum interference between low-energy discrete phonon and exciton continuum under resonant excitation. Our works pave a way to understand the exciton-phonon coupling and many-body effects in 2D materials. △ Less

Submitted 5 April, 2017; originally announced April 2017.

Comments: 14 pages, 11 figures

Journal ref: 2D materials, 2017

Ion and water transport in charge-modified graphene nanopores

Authors: Yinghua Qiu, Kun Li, Weiyu Chen, Wei Si, Qiyan Tan, Yunfei Chen

Abstract: Porous graphene has high mechanical strength and atomic layer thickness, which make it a promising material for material separation and biomolecule sensing. Electrostatic interactions between charges in aqueous solution are a kind of strong long-range interaction which may have great influence on the fluid transport through nanopores. Here, molecular dynamics simulations were conducted to investig… ▽ More Porous graphene has high mechanical strength and atomic layer thickness, which make it a promising material for material separation and biomolecule sensing. Electrostatic interactions between charges in aqueous solution are a kind of strong long-range interaction which may have great influence on the fluid transport through nanopores. Here, molecular dynamics simulations were conducted to investigate ion and water transport through a 1.05-nm-in-diameter monolayer graphene nanopore with its edge charge-modified. From the results, it is found that the nanopores are selective to counterions when they are charged. As the charge amount increases, the total ionic currents show an increase-decrease profile while the co-ion currents monotonously decrease. The co-ions rejection can reach 75% and 90% when the nanopores are negatively and positively charged, respectively. Cl ions current increases and reaches a plateau, and Na+ current decreases with the charge amount in the systems where they act as counterions. Besides, the charge modification can enhance the water transport through nanopores obviously. This is mainly due to the ion selection of nanopores. Especially, positive charges on the pore edge facilitate the water transport much more than negative charges. △ Less

Submitted 29 July, 2016; originally announced August 2016.

Journal ref: Chinese Physics B 24(10) 108201, 2015

Physical origin of Davydov splitting and resonant Raman spectroscopy of Davydov components in multilayer MoTe2

Authors: Q. J. Song, Q. H. Tan, X. Zhang, J. B. Wu, B. W. Sheng, Y. Wan, X. Q. Wang, L. Dai, P. H. Tan

Abstract: We systematically study the high-resolution and polarized Raman spectra of multilayer (ML) MoTe2. The layer-breathing (LB) and shear (C) modes are observed in the ultralow-frequency region, which are used to quantitatively evaluate the interlayer coupling in ML MoTe2 based on the linear chain model, in which only the nearest interlayer coupling is considered. The Raman spectra on three different s… ▽ More We systematically study the high-resolution and polarized Raman spectra of multilayer (ML) MoTe2. The layer-breathing (LB) and shear (C) modes are observed in the ultralow-frequency region, which are used to quantitatively evaluate the interlayer coupling in ML MoTe2 based on the linear chain model, in which only the nearest interlayer coupling is considered. The Raman spectra on three different substrates verify the negligible substrate effect on the phonon frequencies of ML MoTe2. Ten excitation energies are used to measure the high-frequency modes of N-layer MoTe2 (NL MoTe2; N is an integer). Under the resonant excitation condition, we observe N-dependent Davydov components in ML MoTe2 , originating from the Raman-active A'1(A21g) modes at ~172 cm-1. More than two Davydov components are observed in NL MoTe2 for N larger than 4 by Raman spectroscopy. The N-dependent Davydov components are further investigated based on the symmetry analysis. A van der Waals model only considering the nearest interlayer coupling has been proposed to well understand the Davydov splitting of high-frequency A'1(A21g) modes. The different resonant profiles for the two Davydov components in 3L MoTe2 indicate that proper excitation energy of ~1.8-2.2 eV must be chosen to observe the Davydov splitting in ML MoTe2 . Our work presents a simple way to identify layer number of ultrathin MoTe2 flakes by the corresponding number and peak position of Davydov components. Our work also provides a direct evidence from Raman spectroscopy of how the nearest van der Waals interactions significantly affect the frequency of the high-frequency intralayer phonon modes in multilayer MoTe2 and expands the understanding on the lattice vibrations and interlayer coupling of transition metal dichalcogenides and other two-dimensional materials. △ Less

Submitted 9 March, 2016; v1 submitted 18 February, 2016; originally announced February 2016.

Comments: accepted by Phys. Rev. B (PhysRevB.93.115409)

Journal ref: Phys. Rev. B 93, 115409 (2016)

Determining layer number of two dimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrate

Authors: Xiao-Li Li, Xiao-Fen Qiao, Wen-Peng Han, Xin Zhang, Qing-Hai Tan, Tao Chen, Ping-Heng Tan

Abstract: Transition-metal dichalcogenide (TMD) semiconductors have been widely studied due to their distinctive electronic and optical properties. The property of TMD flakes is a function of its thickness, or layer number (N). How to determine N of ultrathin TMDs materials is of primary importance for fundamental study and practical applications. Raman mode intensity from substrates has been used to identi… ▽ More Transition-metal dichalcogenide (TMD) semiconductors have been widely studied due to their distinctive electronic and optical properties. The property of TMD flakes is a function of its thickness, or layer number (N). How to determine N of ultrathin TMDs materials is of primary importance for fundamental study and practical applications. Raman mode intensity from substrates has been used to identify N of intrinsic and defective multilayer graphenes up to N=100. However, such analysis is not applicable for ultrathin TMD flakes due to the lack of a unified complex refractive index ($\tilde{n}$) from monolayer to bulk TMDs. Here, we discuss the N identification of TMD flakes on the SiO$_2$/Si substrate by the intensity ratio between the Si peak from 100-nm (or 89-nm) SiO$_2$/Si substrates underneath TMD flakes and that from bare SiO$_2$/Si substrates. We assume the real part of $\tilde{n}$ of TMD flakes as that of monolayer TMD and treat the imaginary part of $\tilde{n}$ as a fitting parameter to fit the experimental intensity ratio. An empirical $\tilde{n}$, namely, $\tilde{n}_{eff}$, of ultrathin MoS$_{2}$, WS$_{2}$ and WSe$_{2}$ flakes from monolayer to multilayer is obtained for typical laser excitations (2.54 eV, 2.34 eV, or 2.09 eV). The fitted $\tilde{n}_{eff}$ of MoS$_{2}$ has been used to identify N of MoS$_{2}$ flakes deposited on 302-nm SiO$_2$/Si substrate, which agrees well with that determined from their shear and layer-breathing modes. This technique by measuring Raman intensity from the substrate can be extended to identify N of ultrathin 2D flakes with N-dependent $\tilde{n}$ . For the application purpose, the intensity ratio excited by specific laser excitations has been provided for MoS$_{2}$, WS$_{2}$ and WSe$_{2}$ flakes and multilayer graphene flakes deposited on Si substrates covered by 80-110 nm or 280-310 nm SiO$_2$ layer. △ Less

Submitted 17 February, 2016; originally announced February 2016.

Comments: 10 pages, 4 figures. Accepted by Nanotechnology

Journal ref: Nanotechnology, 27:14,145704 (2016)

Optical properties of $MgCNi_3$ in the normal state

Authors: P. Zheng, J. L. Luo, G. T. Liu, Y. L. Zhang, R. C. Yu, C. Q. Jin, N. L. Wang, M. Q. Tan

Abstract: We present the optical reflectance and conductivity spectra for non-oxide antiperovskite superconductor $MgCNi_{3}$ at different temperatures. The reflectance drops gradually over a large energy scale up to 33,000 cm$^{-1}$, with the presence of several wiggles. The reflectance has slight temperature dependence at low frequency but becomes temperature independent at high frequency. The optical c… ▽ More We present the optical reflectance and conductivity spectra for non-oxide antiperovskite superconductor $MgCNi_{3}$ at different temperatures. The reflectance drops gradually over a large energy scale up to 33,000 cm$^{-1}$, with the presence of several wiggles. The reflectance has slight temperature dependence at low frequency but becomes temperature independent at high frequency. The optical conductivity shows a Drude response at low frequencies and four broad absorption features in the frequency range from 600 $cm^{-1}$ to 33,000 $cm^{-1}$. We illustrate that those features can be well understood from the intra- and interband transitions between different components of Ni 3d bands which are hybridized with C 2p bands. There is a good agreement between our experimental data and the first-principle band structure calculations. △ Less

Submitted 26 July, 2005; originally announced July 2005.

Comments: 4 pages, to be published in Phys. Rev. B

Journal ref: Phys. Rev. B 72, 092509 (2005)