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Polarization spontaneous and piezo: fundamentals and their implementation in ab initio calculations
Authors:
Pawel Strak,
Pawel Kempisty,
Konrad Sakowski,
Jacek Piechota,
Izabella Grzegory,
Eva Monroy,
Agata Kaminska,
Stanislaw Krukowski
Abstract:
Fundamental properties of spontaneous and piezo polarization are reformulated and critically reviewed. It was demonstrated that Landau definition of polarization as a dipole density could be used to the infinite systems. The difference between the bulk polarization and surface polarity are distinguished thus creating clear identification of both components. The local model of spontaneous polarizat…
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Fundamental properties of spontaneous and piezo polarization are reformulated and critically reviewed. It was demonstrated that Landau definition of polarization as a dipole density could be used to the infinite systems. The difference between the bulk polarization and surface polarity are distinguished thus creating clear identification of both components. The local model of spontaneous polarization was created and used to calculate spontaneous polarization as the electric dipole density. It was shown that the proposed local model correctly predicts c-axis spontaneous polarization values of the nitride wurtzite semiconductors. It was also shown that the proposed model predicts zero polarization in the plane perpendicular to the c-axis, in accordance with symmetry requirements. In addition, the model results are in accordance with polarization equal to zero for zinc blende lattice. These data confirm the basic correctness of the proposed model. The spontaneous polarization values obtained for all wurtzite III nitrides (BN, AlN, GaN and InN) are in basic agreement with the earlier calculations using Berry phase and slab models of Bernardini et al. {Bernardini et al. Phys Rev B 56 (2001) R10024 & 63 (2001) 193201} but not with Dreyer et al. {Dreyer et al. Phys. Rev X 6 (2016) 021038}. Wurtzite nitride superlattices ab initio calculations were performed to derive polarization-induced fields in the coherently strained lattices showing good agreement with the polarization values. The strained superlattice data were used to determine the piezoelectric parameters of wurtzite nitrides obtaining the values that were in basic agreement with the earlier data. Zinc blende superlattices were also modeled using ab initio calculations showing results that are in agreement with the absence of polarization of all nitrides in zinc blende symmetry.
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Submitted 1 July, 2024;
originally announced July 2024.
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Pressure-dependent bandgap study of MBE grown {CdO/MgO} short period SLs using diamond anvil cell
Authors:
Abinash Adhikari,
Pawel Strak,
Piotr Dluzewski,
Agata Kaminska,
Ewa Przezdziecka
Abstract:
Semiconductor superlattices have found widespread applications in electronic industries. In this work, short-period superlattice structure (SLs) composed of CdO and MgO layers was grown using the plasma-assisted molecular beam epitaxy (PA-MBE) technique. The optical property of the SLs was investigated by absorption measurement at room temperature. The ambient-pressure direct bandgap was found to…
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Semiconductor superlattices have found widespread applications in electronic industries. In this work, short-period superlattice structure (SLs) composed of CdO and MgO layers was grown using the plasma-assisted molecular beam epitaxy (PA-MBE) technique. The optical property of the SLs was investigated by absorption measurement at room temperature. The ambient-pressure direct bandgap was found to be 2.76 eV. The pressure dependence of fundamental bandgap has been studied using a diamond anvil cell (DAC) technique. It has been found that the band-to-band transition shifts toward higher energy with applied pressure. The bandgap of SLs was varied from 2.76 eV to 2.87 eV with applied pressure varied from 0 to 5.9 GPa. The pressure coefficient for the direct bandgap of SLs was found to be 26 meV/GPa. The obtained experimental result was supported by theoretical results obtained using DFT calculations. The volume deformation potential was estimated using the empirical rule. We believe our findings may provide valuable insight for a better understanding of {CdO/MgO} SLs towards their future applications in optoelectronics.
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Submitted 13 February, 2024;
originally announced February 2024.
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Surface charge induced $sp^3$-$sp^2$ transformation: new energy optimization universal mechanism of (4x4) reconstruction of stoichiometric GaN(0001) surface
Authors:
Paweł Strak,
Wolfram Miller,
Stanisław Krukowski
Abstract:
Ab initio calculations were applied to large size slabs simulations for determination of the properties of the principal structures of the stoichiometric GaN(0001) surface. The results are different from published previously: stoichiometric GaN(0001) surface structure is characterized by mixed structure in which 3/8 top layer Ga atoms remain in standard position with $sp^3$ hybridized bonding whil…
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Ab initio calculations were applied to large size slabs simulations for determination of the properties of the principal structures of the stoichiometric GaN(0001) surface. The results are different from published previously: stoichiometric GaN(0001) surface structure is characterized by mixed structure in which 3/8 top layer Ga atoms remain in standard position with $sp^3$ hybridized bonding while the remaining 5/8 top layer Ga atoms is located in plane of N atoms with $sp^2$ hybridized bonding. This involves charge transfer to the previous one, entailing energy optimization, therefore Ga-s and Ga-p energy difference is driving force for the transition. In large size surfaces Ga atoms create (4 x 4) reconstruction which is additionally stabilized by strain optimization. Heavy doping in the bulk changes $sp^3$ to $sp^2$ ratio thus confirming the charge transfer mechanism of the reconstruction. The charge transfer energy optimization is universal for all surfaces terminated by $sp^3$ bonded atoms.
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Submitted 22 January, 2024; v1 submitted 12 January, 2024;
originally announced January 2024.
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Coulomb contribution to Shockley-Read-Hall (SRH) recombination
Authors:
Konrad Sakowski,
Pawel Strak,
Pawel Kempisty,
Jacek Piechota,
Izabella Grzegory,
Piotr Perlin,
Eva Monroy,
Agata Kaminska,
Stanislaw Krukowski
Abstract:
Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination is reformulated. The introduced model considers Coulomb attraction between charged deep defect and the approaching free carrier, showing that this effect may cause considerable increase of the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates.…
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Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination is reformulated. The introduced model considers Coulomb attraction between charged deep defect and the approaching free carrier, showing that this effect may cause considerable increase of the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates. It is demonstrated that in the typical semiconductor device or semiconductor medium, the SRH recombination cannot be neglected at low temperatures. The SRH is more effective in the case of low doped semiconductors. Effective screening by mobile carrier density could reduce the effect, leading to SRH rate increase.
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Submitted 26 January, 2024; v1 submitted 18 October, 2023;
originally announced October 2023.
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Macrosteps dynamics and the growth of crystals and epitaxial layers
Authors:
Stanislaw Krukowski,
Konrad Sakowski,
Paweł Strak,
Paweł Kempisty,
Jacek Piechota,
Izabella Grzegory
Abstract:
Step pattern stability of the vicinal surfaces during growth was analyzed using various surface kinetic models. It was shown that standard analysis of the vicinal surfaces provides no indication on the possible step coalescence and therefore could not be used to elucidate macrostep creation during growth. A scenario of the instability, leading go macrostep creation was based on the dynamics of the…
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Step pattern stability of the vicinal surfaces during growth was analyzed using various surface kinetic models. It was shown that standard analysis of the vicinal surfaces provides no indication on the possible step coalescence and therefore could not be used to elucidate macrostep creation during growth. A scenario of the instability, leading go macrostep creation was based on the dynamics of the step train. The critical is step motion at the rear of the train which leads to double and multiple step creation. The condition is that the step density ratio in and out of the train lower than 2 prevents double step formation irrespective of the kinetics. For higher step density ratio low density of the step promotes single step stability. Fast step kinetics from lower terrace stabilizes the single steps slow (high barrier) is promoting step coalescence. The incorporation kinetics from upper terrace role is close to neutral. The creation of double step creates slow the step in front to accelerate and catch the previous double step while those behind catch up the double step creating multistep structure. The multistep are not mobile as the alimentation leads to emission of single step which moves forward. The final structure consist of macrosteps and superterraces with the number of single steps moving forward. Thus the single step motion is essential crystal growth mode despite the presence of the macrosteps. The macrostep are prone to creation of the overhangs which results from surface dynamics coupling to impingement from the mother phase. The angular preferential access of the bulk material to the macrostep edge, leads to diffusive instability. Therefore it is expected that harmful influence of the macrosteps by creation of inclusions and dislocation is stronger during growth from the liquid phase.
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Submitted 11 January, 2023; v1 submitted 22 March, 2022;
originally announced March 2022.
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Polarization doping ab initio verification of the concept charge conservation and nonlocality
Authors:
Ashfaq Ahmad,
Pawel Strak,
Pawel Kempisty,
Konrad Sakowski,
Jacek Piechota,
Yoshihiro Kangawa,
Izabella Grzegory,
Michal Leszczynski,
Zbigniew R. Zytkiewicz,
Grzegorz Muziol,
Eva Monroy,
Stanislaw Krukowski,
Agata Kaminska
Abstract:
In this work, we study the emergence of polarization doping in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation law applies for fixed and mobile charges separately, leading to nonlocal compensation phenomena involving bulk fixed and mobile charge and polarization sheet charge at the heterointerfaces. The magnitude of the effect allo…
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In this work, we study the emergence of polarization doping in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation law applies for fixed and mobile charges separately, leading to nonlocal compensation phenomena involving bulk fixed and mobile charge and polarization sheet charge at the heterointerfaces. The magnitude of the effect allows obtaining technically viable mobile charge density for optoelectronic devices without impurity doping (donors or acceptors). Therefore, it provides an additional tool for the device designer, with the potential to attain high conductivities: high carrier concentrations can be obtained even in materials with high dopant ionization energies, and the mobility is not limited by scattering at ionized impurities.
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Submitted 22 March, 2022; v1 submitted 2 June, 2021;
originally announced June 2021.
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Comment to "Topological insulators and superconductors" by Xiao-Liang Qi and Shou-Cheng Zhang Reviews of Modern Physics 83, 1057 (2011)
Authors:
Stanisław Krukowski,
Paweł Kempisty,
Paweł Strak,
Konrad Sakowski
Abstract:
The paper reports on the solution in the semi-space corresponding to topological surface state. It was shown that the exponential surface state results from selection of the energy outside the allowed energy range. In the result, the kinetic energy of the state is negative proving that the proposed state is not physically correct solution.
The paper reports on the solution in the semi-space corresponding to topological surface state. It was shown that the exponential surface state results from selection of the energy outside the allowed energy range. In the result, the kinetic energy of the state is negative proving that the proposed state is not physically correct solution.
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Submitted 20 February, 2019;
originally announced February 2019.
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Comment to "Quantum Spin Hall Effect and Topological Phase Transition in HGTe Quantum Wells" by B. Andrei Bernevig, Taylor L. Hughes and Shou-Cheng Zhang Science 314, 1757 (2006)
Authors:
Stanisław Krukowski,
Paweł Kempisty,
Paweł Strak,
Konrad Sakowski
Abstract:
The manuscript contains Comment to "Quantum Spin Hall Effect and Topological Phase Transitio in HGTe Quantum Wells" by B. Andrei Bernevig, Taylor L. Hughes and Shou-Cheng Zhang Science 314, 1757 (2006). The text proves that the quantum state, identified by these authors as the surface state located inside HgTe well is incorrect physically. The kinetic energy of the state is negative. The state can…
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The manuscript contains Comment to "Quantum Spin Hall Effect and Topological Phase Transitio in HGTe Quantum Wells" by B. Andrei Bernevig, Taylor L. Hughes and Shou-Cheng Zhang Science 314, 1757 (2006). The text proves that the quantum state, identified by these authors as the surface state located inside HgTe well is incorrect physically. The kinetic energy of the state is negative. The state cannot be identified as proper eigenfunction (vector) in the Hilbert space. Therefore the state could be used as a primer in the topological state theory, developed in the following publications.
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Submitted 13 February, 2019;
originally announced February 2019.
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Dissipation of the excess energy of the adsorbate- thermalization via electron transfer
Authors:
Paweł Strak,
Konrad Sakowski,
Stanisław Krukowski
Abstract:
A new scenario of thermalization process of the adsorbate attached at solid surfaces is proposed. The scenario is based on existence of electric dipole layer in which the electron wavefunctions extend over the positive ions. Thus the strong local electric field exists which drags electron into the solids and repels the positive ions. The electrons are tunneling conveying the energy into the solid…
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A new scenario of thermalization process of the adsorbate attached at solid surfaces is proposed. The scenario is based on existence of electric dipole layer in which the electron wavefunctions extend over the positive ions. Thus the strong local electric field exists which drags electron into the solids and repels the positive ions. The electrons are tunneling conveying the energy into the solid interior. The positive ions are retarded in the field, which allows them to loose excess kinetic energy and to be located smoothly into the adsorption sites. In this way the excess energy is not dissipated locally avoiding melting or creation of defects, in accordance with the experiments. The scenario is supported by the ab intio calculation results including density function theory of the slabs representing AlN surface and the Schrodinger equation for time evolution of hydrogen-like atom at the solid surface.
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Submitted 8 November, 2016;
originally announced November 2016.
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General aspects of the vapor growth of semiconductor crystals - a study based on DFT simulations of the NH3/NH2 covered GaN(0001) surface in hydrogen ambient
Authors:
Pawel Kempisty,
Pawel Strak,
Konrad Sakowski,
Stanislaw Krukowski
Abstract:
Vapor growth of semiconductors is analyzed using recently obtained dependence of the adsorption energy on the electron charge transfer between the surface adsorbed species and the bulk [Krukowski et al. J. Appl. Phys. 114 (2013) 063507, Kempisty et al. ArXiv 1307.5778 (2013)]. Ab initio calculations were performed to study the physical properties of GaN(0001) surface in ammonia-rich conditions, i.…
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Vapor growth of semiconductors is analyzed using recently obtained dependence of the adsorption energy on the electron charge transfer between the surface adsorbed species and the bulk [Krukowski et al. J. Appl. Phys. 114 (2013) 063507, Kempisty et al. ArXiv 1307.5778 (2013)]. Ab initio calculations were performed to study the physical properties of GaN(0001) surface in ammonia-rich conditions, i.e. covered by mixture of NH3 molecules and NH2 radicals. The Fermi level is pinned at valence band maximum (VBM) and conduction band minimum (CBM) for full coverage by NH3 molecules and NH2 radicals, respectively. For the crossover content of ammonia of about 25% monolayer (ML), the Fermi level is unpinned. It was shown that hydrogen adsorption energy depends on the doping in the bulk for the unpinned Fermi level, i.e. for this coverage. Surface structure thermodynamic and mechanical stability criteria are defined and compared. Mechanical stability of the coverage of such surfaces was checked by determination of the desorption energy of hydrogen molecules. Thermodynamic stability analysis indicates that initally equilibrium hydrogen vapor partial pressure steeply increases with NH3 content to attain the crossover NH3/NH2 coverage, i.e. the unpinned Fermi level condition. For such condition the entire range of experimentally accessible pressures belongs showing that vapor growth of semiconductor crystals occurs predominantly for unpinned Fermi level at the surface, i.e. for flat bands. Accordingly, adsorption energy of most species depends on the doping in the bulk that is basis of the possible molecular scenario explaining dependence of the growth and the doping of semiconductor crystals on the doping in the bulk
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Submitted 19 November, 2013;
originally announced November 2013.
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Energy of adsorption at semiconducting surfaces with Fermi level differently pinned -- ab initio study
Authors:
Paweł Kempisty,
Paweł Strak,
Konrad Sakowski,
Stanisław Krukowski
Abstract:
It is shown that adsorption energy at semiconductor surfaces critically depends on the charge transfer to or from the adsorbed species. For the processes without the charge transfer, such as molecular adsorption of closed shell systems, the adsorption energy is determined by the bonding only. In the case involving charge transfer, such as open shell systems like metal atoms or the dissociating mol…
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It is shown that adsorption energy at semiconductor surfaces critically depends on the charge transfer to or from the adsorbed species. For the processes without the charge transfer, such as molecular adsorption of closed shell systems, the adsorption energy is determined by the bonding only. In the case involving charge transfer, such as open shell systems like metal atoms or the dissociating molecules, the energy attains different value for the Fermi level differently pinned. The DFT simulation of adsorption of ammonia at hydrogen covered GaN(0001) confirms these predictions: the molecular adsorption is independent on the coverage while the dissociative process energy varies by several electronvolts.
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Submitted 22 August, 2013; v1 submitted 22 July, 2013;
originally announced July 2013.
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Fermi level influence on the adsorption at semiconductor surfaces - ab initio simulations
Authors:
Stanislaw Krukowski,
Pawel Kempisty,
Pawel Strak
Abstract:
Chemical adsorption of the species at semiconductor surfaces is analyzed showing the existence of the two contributions to adsorption energy: bond creation and charge transfer. It is shown that the energy of quantum surface states is affected by the electric field at the surface, nevertheless the potential contribution of electron and nuclei cancels out. The charge transfer contribution is Fermi l…
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Chemical adsorption of the species at semiconductor surfaces is analyzed showing the existence of the two contributions to adsorption energy: bond creation and charge transfer. It is shown that the energy of quantum surface states is affected by the electric field at the surface, nevertheless the potential contribution of electron and nuclei cancels out. The charge transfer contribution is Fermi level independent for pinned surfaces. Thus for Fermi level pinned at the surface, the adsorption energy is independent on the Fermi energy i.e. the doping in the bulk. The DFT simulations of adsorption of hydrogen at clean GaN(0001) and silicon at SiC(0001) surfaces confirmed independence of adsorption energy on the doping in the bulk. For the Fermi level nonpinned surfaces the charge contribution depends on the position of Fermi level in the bulk. Thus adsorption energy is sensitive to change of the Fermi energy in the bulk, i.e. the doping. The DFT simulations of adsorption of atomic hydrogen at 0.75 ML hydrogen covered GaN(0001) surface confirmed that the adsorption energy may be changed by about 2 eV by the doping change from n- to p-type.
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Submitted 12 June, 2013;
originally announced June 2013.
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Foundations of ab initio simulations of electric charges and fields at semiconductor surfaces within slab models
Authors:
Stanisław Krukowski,
Paweł Kempisty,
Paweł Strąk
Abstract:
Semiconductor surfaces were divided into charge categories, i.e. surface acceptor, donor and neutral ones that are suitable for simulations of their properties within a slab model. The potential profiles, close to the charged surface states, accounting for explicit dependence of the point defects energy, were obtained. A termination charge slab model was formulated and analyzed proving that two co…
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Semiconductor surfaces were divided into charge categories, i.e. surface acceptor, donor and neutral ones that are suitable for simulations of their properties within a slab model. The potential profiles, close to the charged surface states, accounting for explicit dependence of the point defects energy, were obtained. A termination charge slab model was formulated and analyzed proving that two control parameters of slab simulations exist: the slope and curvature of electric potential profiles which can be translated into a surface and volumetric charge density. The procedures of slab model parameter control are described and presented using examples of the DFT simulations of GaN and SiC surfaces showing the potential profiles, linear or curved, depending on the band charge within the slab. It was also demonstrated that the field at the surface may affect some surface properties in a considerable degree proving that verification of this dependence is obligatory for a precise simulation of the properties of semiconductor surfaces.
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Submitted 9 February, 2013;
originally announced February 2013.
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High efficiency UV emitters - theoretical investigation of GaN/AlN heterostructures
Authors:
Pawel Strak,
Pawel Kempisty,
Stanislaw Krukowski
Abstract:
Density functional theory simulations were used to obtain physical properties of GaN/AlN system. Combination of these two compounds into multiquantum well (MQW) structure will induce strong electrostatic effect leading to emergence of high magnitude dipole layers at the AlN/GaN interfaces, which were first postulated by {Tersoff Phys. Rev. B 30(8) pp.4874 (1984)} and already identified in GaN/InN…
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Density functional theory simulations were used to obtain physical properties of GaN/AlN system. Combination of these two compounds into multiquantum well (MQW) structure will induce strong electrostatic effect leading to emergence of high magnitude dipole layers at the AlN/GaN interfaces, which were first postulated by {Tersoff Phys. Rev. B 30(8) pp.4874 (1984)} and already identified in GaN/InN by {Romanowski et al. J. Phys. Chem C 114. 14410 (2010)}. When combining GaN and AlN in to a heterostructure a spatial projection of wavefunctions indicate that valence band offset between states becomes of order of 0.85 V. Systematic analysis of influence of number of Ga atomic layers on the properties of wells have shown that for thickness up to 4 Ga layers, GaN behave as carriers locating potential minimum rather, while for larger thickness it is a standard quantum well. In all cases wells has strongly localized quantum states close to valance band maxima (VBM) and conduction band minimum (CBM). The calculated oscillator strength values rapidly decreases for the well thickness in excess of 8 Ga layers (~21 Å) which indicates that wells for UV emitters should be much thinner than these based on InGaN/GaN systems. The Quantum Confined Stark Effect (QCSE) related changes of the transition energy in function of the geometric arrangement were also obtained.
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Submitted 7 November, 2012; v1 submitted 29 August, 2012;
originally announced August 2012.
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Polarization and polarization induced electric field in nitrides - critical evaluation based on DFT studies
Authors:
Pawel Strak,
Pawel Kempisty,
Konrad Sakowski,
Stanislaw Krukowski
Abstract:
Density Functional Theory (DFT) calculations were used to evaluate polarity of group III nitrides, such as aluminum nitride (AlN), gallium nitride (GaN) and indium nitride (InN) providing physically sound quantitative measure of polarity of these materials. Two different approaches to polarization of nitride semiconductors were assessed and the conclusions have been used to develop models. It was…
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Density Functional Theory (DFT) calculations were used to evaluate polarity of group III nitrides, such as aluminum nitride (AlN), gallium nitride (GaN) and indium nitride (InN) providing physically sound quantitative measure of polarity of these materials. Two different approaches to polarization of nitride semiconductors were assessed and the conclusions have been used to develop models. It was shown that Berry phase formulation of the electron related polarization component provides a number of various solutions, different for various selection of the simulated volume. The electronic part gives saw-like pattern for polarization. A total number of these solutions, related to well known scaling of the geometric phase, is equal to the number of valence electrons in the system. Summation with similar pattern for ionic part provides several polarization values. Standard dipole density formulation depends on the selection of the simulation volume in periodic continuous way. Using a condition of continuous embedding into the infinite medium, and simultaneously, the zero surface charge representation at crystal boundary provides to physically sound solution. This solution is corresponding to maximal and minimal polarization values and also corresponds to different physical termination of the crystal surfaces, either bare or covered by complementary atoms. This change leads to polarization and electric field reversal. The polarization and related fields in finite size systems were obtained.
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Submitted 16 November, 2011; v1 submitted 20 October, 2011;
originally announced October 2011.
