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THz Control of Exchange Mode in a Ferrimagnetic Cavity
Authors:
Chris Reinhoffer,
Ilya Razdolski,
Philipp Stein,
Semyon Germanskiy,
Andrzej Stupakiewicz,
Paul H. M. van Loosdrecht,
Evgeny A. Mashkovich
Abstract:
The interaction of terahertz (THz) radiation with high-frequency spin resonances in complex magnetic materials is central for modern ultrafast magnonics. Here we demonstrate strong variations of the excitation efficiency of the sub-THz exchange magnon in a single crystal ferrimagnet (Gd,Bi)$_3$Fe$_5$O$_{12}$. An enhancement of the exchange magnon amplitude is observed when its frequency matches an…
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The interaction of terahertz (THz) radiation with high-frequency spin resonances in complex magnetic materials is central for modern ultrafast magnonics. Here we demonstrate strong variations of the excitation efficiency of the sub-THz exchange magnon in a single crystal ferrimagnet (Gd,Bi)$_3$Fe$_5$O$_{12}$. An enhancement of the exchange magnon amplitude is observed when its frequency matches an eigenmode of the cavity created by the sample interfaces. Moreover, this enhancement is accompanied by a 5-fold decrease in effective damping of the exchange mode. The THz-exchange magnon interaction in the cavity is analyzed within the developed Landau-Lifshitz-Gilbert formalism for three coupled magnetization sublattices and cavity-enhanced THz field. This work presents a novel approach for the THz excitation of spin dynamics in ferrimagnets and outlines promising pathways for the controlled optimization of light-spin coupling in single crystals.
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Submitted 15 July, 2024; v1 submitted 28 June, 2024;
originally announced June 2024.
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Ultrafast Optical Control of Exciton Diffusion in WSe$_2$/Graphene Heterostructures Revealed by Heterodyne Transient Grating Spectroscopy
Authors:
Lukas Rieland,
Julian Wagner,
Robin Bernhardt,
Tianyi Wang,
Omar Abdul-Aziz,
Philipp Stein,
Eva Arianna Aurelia Pogna,
Stefano Dal Conte,
Giulio Cerullo,
Hamoon Hedayat,
Paul H. M. van Loosdrecht
Abstract:
Using heterodyne transient grating spectroscopy, we observe a significant enhancement of exciton diffusion within a monolayer WSe$_2$ stacked on top of graphene. We further demonstrate that the diffusion dynamics can be optically tuned on the ultrafast time scale (i.e. a few picoseconds) by altering the photoexcited charge carrier density in graphene. The results reveal that, on a time scale of a…
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Using heterodyne transient grating spectroscopy, we observe a significant enhancement of exciton diffusion within a monolayer WSe$_2$ stacked on top of graphene. We further demonstrate that the diffusion dynamics can be optically tuned on the ultrafast time scale (i.e. a few picoseconds) by altering the photoexcited charge carrier density in graphene. The results reveal that, on a time scale of a few picoseconds, the effective diffusion constant in the WSe$_2$/graphene heterostructure is approximately 40 cm$^2 $/s, representing a substantial improvement over the 2 cm$^2 $/s typical for an isolated monolayer of WSe$_2$. The enhanced diffusion can be understood in terms of a transient screening of impurities, charge traps, and defect states in WSe$_2$ by photoexcited charge carriers in graphene. Furthermore, we observe that the diffusion within WSe$_2$ is affected by interlayer interactions, like charge transfer, exhibiting different dynamic states depending on the incident excitation fluence. These findings underscore the dynamic nature of screening and diffusion processes in heterostructures of 2D semiconductors and graphene and provide valuable insights for future applications of these systems in ultrafast optoelectronic devices.
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Submitted 26 April, 2024;
originally announced April 2024.
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Electronic excitations in $5d^4$ J=0 Os$^{4+}$ halides studied by RIXS and optical spectroscopy
Authors:
P. Warzanowski,
M. Magnaterra,
P. Stein,
G. Schlicht,
Q. Faure,
Ch. J. Sahle,
T. Lorenz,
P. Becker,
L. Bohaty,
M. Moretti Sala,
G. Monaco,
P. H. M. van Loosdrecht,
M. Grüninger
Abstract:
We demonstrate that the cubic antifluorite-type halides K$_2$OsCl$_6$, K$_2$OsBr$_6$, and Rb$_2$OsBr$_6$ are excellent realizations of non-magnetic J=0 compounds. The magnetic susceptibility shows the corresponding Van-Vleck type behavior and no sign of defects. We investigate the electronic excitations with two complementary techniques, resonant inelastic x-ray scattering (RIXS) and optical spect…
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We demonstrate that the cubic antifluorite-type halides K$_2$OsCl$_6$, K$_2$OsBr$_6$, and Rb$_2$OsBr$_6$ are excellent realizations of non-magnetic J=0 compounds. The magnetic susceptibility shows the corresponding Van-Vleck type behavior and no sign of defects. We investigate the electronic excitations with two complementary techniques, resonant inelastic x-ray scattering (RIXS) and optical spectroscopy. This powerful combination allows us to thoroughly study, e.g., on-site intra-$t_{2g}$ excitations and $t_{2g}$-to-$e_g$ excitations as well as inter-site excitations across the Mott gap and an exciton below the gap. In this way, we determine the electronic parameters with high accuracy, altogether yielding a comprehensive picture. In K$_2$OsCl$_6$, we find the spin-orbit coupling constant $ζ$=0.34 eV, Hund's coupling $J_H$=0.43 eV, the onset of excitations across the Mott gap at $Δ$=2.2 eV, the cubic crystal-field splitting 10Dq=3.3 eV, and the charge-transfer energy $Δ_{CT}$=4.6 eV. With $J_H/ζ$=1.3, K$_2$OsCl$_6$ is in the intermediate-coupling regime. In a $t_{2g}$-only Kanamori picture, the above values correspond to $ζ^{eff}$=0.41 eV and $J_H^{eff}$=0.28 eV, which is very close to results reported for related $5d^4$ iridates. In the tetragonal phase at 5 K, the non-cubic crystal field causes a peak splitting of the J=1 state as small as 4 meV. Compared to K$_2$OsCl$_6$, the bromides K$_2$OsBr$_6$ and Rb$_2$OsBr$_6$ show about 12-14 % smaller values of 10Dq and $Δ_{CT}$, while the spin-orbit-entangled intra-$t_{2g}$ excitations below 2 eV and hence $ζ$ and $J_H$ are reduced by less than 4 %. Furthermore, the Mott gap in K$_2$OsBr$_6$ is reduced to about 1.8 eV.
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Submitted 21 June, 2023;
originally announced June 2023.
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Chiral excitations and the intermediate-field spin-liquid regime in the Kitaev magnet $α$-RuCl$_3$
Authors:
Anuja Sahasrabudhe,
Mikhail A. Prosnikov,
Thomas C. Koethe,
Philipp Stein,
Vladimir Tsurkan,
Alois Loidl,
Markus Grüninger,
Hamoon Hedayat,
Paul H. M. van Loosdrecht
Abstract:
In the Kitaev magnet $α$-RuCl$_3$, the existence of a magnetic-field-induced quantum spin liquid phase and of anyonic excitations are discussed controversially. We address this elusive, exotic phase via helicity-dependent Raman scattering and analyze the Raman optical activity of excitations as a function of magnetic field and temperature. The hotly debated field regime between 7.5 T and 10.5 T is…
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In the Kitaev magnet $α$-RuCl$_3$, the existence of a magnetic-field-induced quantum spin liquid phase and of anyonic excitations are discussed controversially. We address this elusive, exotic phase via helicity-dependent Raman scattering and analyze the Raman optical activity of excitations as a function of magnetic field and temperature. The hotly debated field regime between 7.5 T and 10.5 T is characterized by clear spectroscopic signatures such as a plateau of the Raman optical activity of the dominant, chiral spin-flip excitation. This provides direct evidence for the existence of a distinct intermediate field regime compatible with a quantum spin liquid phase.
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Submitted 5 May, 2023;
originally announced May 2023.
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Local symmetry breaking and low-energy continuum in K$_2$ReCl$_6 $
Authors:
P. Stein,
T. C. Koethe,
L. Bohaty,
P. Becker,
M. Grüninger,
P. H. M. van Loosdrecht
Abstract:
Using polarization selective spontaneous Raman scattering, we have investigated the 5$d$ transition metal compound K$_2$ReCl$_6$ which displays a series of structural phase transitions. We observe a violation of the Raman selection rules in the cubic high temperature phase as well as a low-energy scattering continuum persistent throughout the investigated temperature range from 300 down to 5 K. Th…
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Using polarization selective spontaneous Raman scattering, we have investigated the 5$d$ transition metal compound K$_2$ReCl$_6$ which displays a series of structural phase transitions. We observe a violation of the Raman selection rules in the cubic high temperature phase as well as a low-energy scattering continuum persistent throughout the investigated temperature range from 300 down to 5 K. The continuum couples to one of the phonon modes at temperatures above the lowest structural phase transition at 76 K. We propose a common origin of these observations caused by local fluctuations in the orientation of the ReCl$_6$ octahedra which locally break the long-range cubic symmetry. Consistent results from the related non-magnetic compound K$_2$SnCl$_6$ support this interpretation.
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Submitted 7 June, 2023; v1 submitted 13 September, 2022;
originally announced September 2022.
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Phonon mode calculations and Raman spectroscopy of the bulk-insulating topological insulator BiSbTeSe$_2$
Authors:
Raphael German,
Evgenia V. Komleva,
Philipp Stein,
Vladimir G. Mazurenko,
Zhiwei Wang,
Sergey V. Streltsov,
Yoichi Ando,
Paul H. M. van Loosdrecht
Abstract:
The tetradymite compound BiSbTeSe$_2$, is one of the most bulk-insulating three-dimensional topological insulators, which makes it important in the topological insulator research. It is a member of the solid-solution system Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$, for which the local crystal structure, such as the occupation probabilities of each atomic site, is not well understood. We have investigated…
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The tetradymite compound BiSbTeSe$_2$, is one of the most bulk-insulating three-dimensional topological insulators, which makes it important in the topological insulator research. It is a member of the solid-solution system Bi$_{2-x}$Sb$_x$Te$_{3-y}$Se$_y$, for which the local crystal structure, such as the occupation probabilities of each atomic site, is not well understood. We have investigated the temperature and polarization dependent spontaneous Raman scattering in BiSbTeSe$_2$, revealing a much higher number of lattice vibrational modes than predicted by group theoretical considerations for the space group R$\bar{3}$m corresponding to an ideally random solid-solution situation. The density functional calculations of phonon frequencies show a very good agreement with experimental data for parent material Bi$_2$Te$_3$, where no disorder effects were found. In comparison to Bi$_2$Te$_3$ the stacking disorder in BiSbTeSe$_2$, causes a discrepancy between theory and experiment. Combined analysis of experimental Raman spectra and DFT calculated phonon spectra for different types of atomic orders showed coexistence of different sequences of layers in the material and that those with Se in the center and a local order of Se-Bi-Se-Sb-Te, are the most favored.
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Submitted 29 November, 2018;
originally announced November 2018.
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Phase-field study of electrochemical reactions at exterior and interior interfaces in Li-Ion battery electrode particles
Authors:
Ying Zhao,
Bai-Xiang Xu,
Peter Stein,
Dietmar Gross
Abstract:
To study the electrochemical reaction on surfaces, phase interfaces, and crack surfaces in the lithium ion battery electrode particles, a phase-field model is developed, which describes fracture in large strains and anisotropic Cahn-Hilliard-Reaction. Thereby the concentration-dependency of the elastic properties and the anisotropy of diffusivity are also considered. The implementation in 3D is ca…
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To study the electrochemical reaction on surfaces, phase interfaces, and crack surfaces in the lithium ion battery electrode particles, a phase-field model is developed, which describes fracture in large strains and anisotropic Cahn-Hilliard-Reaction. Thereby the concentration-dependency of the elastic properties and the anisotropy of diffusivity are also considered. The implementation in 3D is carried out by isogeometric finite element methods in order to treat the high order terms in a straightforward sense. The electrochemical reaction is modeled through a modified Butler-Volmer equation to account for the influence of the phase change on the reaction on exterior surfaces. The reaction on the crack surfaces is considered through a volume source term weighted by a term related to the fracture order parameter. Based on the model, three characteristic examples are considered to reveal the electrochemical reactions on particle surfaces, phase interfaces, and crack surfaces, as well as their influence on the particle material behavior. Results show that the ratio between the timescale of reaction and the diffusion can have a significant influence on phase segregation behavior, as well as the anisotropy of diffusivity. In turn, the distribution of the lithium concentration greatly influences the reaction on the surface, especially when the phase interfaces appear on exterior surfaces or crack surfaces. The reaction rate increases considerably at phase interfaces, due to the large lithium concentration gradient. Moreover, simulations demonstrate that the segregation of a Li-rich and a Li-poor phase during delithiation can drive the cracks to propagate. Results indicate that the model can capture the electrochemical reaction on the freshly cracked surfaces.
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Submitted 19 November, 2015;
originally announced November 2015.
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Superconducting atomic contacts under microwave irradiation
Authors:
M. Chauvin,
P. Vom Stein,
H. Pothier,
P. Joyez,
M. E. Huber,
D. Esteve,
C. Urbina
Abstract:
We have measured the effect of microwave irradiation on the dc current-voltage characteristics of superconducting atomic contacts. The interaction of the external field with the ac supercurrents leads to replicas of the supercurrent peak, the well known Shapiro resonances. The observation of supplementary fractional resonances for contacts containing highly transmitting conduction channels revea…
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We have measured the effect of microwave irradiation on the dc current-voltage characteristics of superconducting atomic contacts. The interaction of the external field with the ac supercurrents leads to replicas of the supercurrent peak, the well known Shapiro resonances. The observation of supplementary fractional resonances for contacts containing highly transmitting conduction channels reveals their non-sinusoidal current-phase relation. The resonances sit on a background current which is itself deeply modified, as a result of photon assisted multiple Andreev reflections. The results provide firm support for the full quantum theory of transport between two superconductors based on the concept of Andreev bound states.
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Submitted 29 August, 2006;
originally announced August 2006.
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Coulomb blockade in two island systems with highly conductive junctions
Authors:
B. Limbach,
P. vom Stein,
C. Wallisser,
R. Schaefer
Abstract:
We report measurements on single-electron pumps, consisting of two metallic islands formed by three tunnel junctions in series. We focus on the linear-response conductance as a function of gate voltage and temperature of three samples with varying system parameters. In all cases, strong quantum fluctuation phenomena are observed by a log(k_B T/(2 E_co)) reduction of the maximal conductance, wher…
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We report measurements on single-electron pumps, consisting of two metallic islands formed by three tunnel junctions in series. We focus on the linear-response conductance as a function of gate voltage and temperature of three samples with varying system parameters. In all cases, strong quantum fluctuation phenomena are observed by a log(k_B T/(2 E_co)) reduction of the maximal conductance, where E_co measures the coupling strength between the islands. The samples display a rich phenomenology, culminating in a non-monotonic behavior of the maximal conductance as a function of temperature.
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Submitted 21 January, 2004;
originally announced January 2004.
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Broadening of the transition between charge states in the single-electron box by the measurement process
Authors:
R. Schaefer,
B. Limbach,
P. v. Stein,
C. Wallisser
Abstract:
We report on measurements on a sample consisting of two nominally identical single-electron transistors the islands of which are coupled capacitively. One transistor at a time is operated as electron box. The remaining transistor is used as an electrometer to measure the charge on the box island. While ramping up the box gate voltage transitions occur periodically between states which differ in…
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We report on measurements on a sample consisting of two nominally identical single-electron transistors the islands of which are coupled capacitively. One transistor at a time is operated as electron box. The remaining transistor is used as an electrometer to measure the charge on the box island. While ramping up the box gate voltage transitions occur periodically between states which differ in the charge on the box island by the elementary charge. This shows up in jumps of the electrometer current. The coupling between the box and the measuring device causes a broadening of the transition width not included in the formulae for an isolated box. This is evident in our data as well as from a thorough analysis of the system in the framework of the sequential tunneling model.
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Submitted 10 May, 2002;
originally announced May 2002.
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Conductance of the single-electron transistor: A comparison of experimental data with Monte Carlo calculations
Authors:
C. Wallisser,
B. Limbach,
P. vom Stein,
R. Schaefer,
C. Theis,
G. Goeppert,
H. Grabert
Abstract:
We report on experimental results for the conductance of metallic single-electron transistors as a function of temperature, gate voltage and dimensionless conductance. In contrast to previous experiments our transistor layout allows for a direct measurement of the parallel conductance and no ad hoc assumptions on the symmetry of the transistors are necessary. Thus we can make a comparison betwee…
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We report on experimental results for the conductance of metallic single-electron transistors as a function of temperature, gate voltage and dimensionless conductance. In contrast to previous experiments our transistor layout allows for a direct measurement of the parallel conductance and no ad hoc assumptions on the symmetry of the transistors are necessary. Thus we can make a comparison between our data and theoretical predictions without any adjustable parameter. Even for rather weakly conducting transistors significant deviations from the perturbative results are noted. On the other hand, path integral Monte Carlo calculations show remarkable agreement with experiments for the whole range of temperatures and conductances.
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Submitted 15 May, 2002; v1 submitted 10 May, 2002;
originally announced May 2002.
