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Revealing the Electronic Structure of NiPS$_3$ through Synchrotron-Based ARPES and Alkali Metal Dosing
Authors:
Yifeng Cao,
Qishuo Tan,
Yucheng Guo,
Clóvis Guerim Vieira,
Mário S. C. Mazzon,
Jude Laverock,
Nicholas Russo,
Hongze Gao,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Jinghua Guo,
Ming Yi,
Matheus J. S. Matos,
Xi Ling,
Kevin E. Smith
Abstract:
This study presents a comprehensive analysis of the band structure in NiPS$_3$, a van der Waals layered antiferromagnet, utilizing high-resolution synchrotron-based angle-resolved photoemission spectroscopy (ARPES) and corroborative density functional theory (DFT) calculations. By tuning the parameters of the light source, we obtained a very clear and wide energy range band structure of NiPS$_3$.…
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This study presents a comprehensive analysis of the band structure in NiPS$_3$, a van der Waals layered antiferromagnet, utilizing high-resolution synchrotron-based angle-resolved photoemission spectroscopy (ARPES) and corroborative density functional theory (DFT) calculations. By tuning the parameters of the light source, we obtained a very clear and wide energy range band structure of NiPS$_3$. Comparison with DFT calculations allows for the identification of the orbital character of the observed bands. Our DFT calculations perfectly match the experimental results, and no adaptations were made to the calculations based on the experimental outcomes. The appearance of novel electronic structure upon alkali metal dosing (AMD) were also obtained in this ARPES study. Above valence band maximum, structure of conduction bands and bands from defect states were firstly observed in NiPS$_3$. We provide the direct determination of the band gap of NiPS$_3$ as 1.3 eV from the band structure by AMD. In addition, detailed temperature dependent ARPES spectra were obtained across a range that spans both below and above the Néel transition temperature of NiPS$_3$. We found that the paramagnetic and antiferromagnetic states have almost identical spectra, indicating the highly localized nature of Ni $d$ states.
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Submitted 2 July, 2024;
originally announced July 2024.
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Spectral evidence for NiPS3 as a Mott-Hubbard insulator
Authors:
Yifeng Cao,
Nicholas Russo,
Qishuo Tan,
Xi Ling,
Jinghua Guo,
Yi-de Chuang,
Kevin E. Smith
Abstract:
The layered van der Waals trichalcogenide NiPS3 has attracted widespread attention due to its unique optical, magnetic, and electronic properties. The complexity of NiPS3 itself, however, has also led to ongoing debates regarding its characteristics such as the existence of self-doped ligand holes. In this study, X-ray absorption spectroscopy and resonant inelastic X-ray scattering have been appli…
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The layered van der Waals trichalcogenide NiPS3 has attracted widespread attention due to its unique optical, magnetic, and electronic properties. The complexity of NiPS3 itself, however, has also led to ongoing debates regarding its characteristics such as the existence of self-doped ligand holes. In this study, X-ray absorption spectroscopy and resonant inelastic X-ray scattering have been applied to investigate the electronic structure of NiPS3. With the aid of theoretical calculations using the charge-transfer multiplet model, we provide experimental evidence for NiPS3 being a Mott-Hubbard insulator rather than a charge-transfer insulator. Moreover, we explain why some previous XAS studies have concluded that NiPS3 is a charge-transfer insulator by comparing surface and bulk sensitive spectra.
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Submitted 1 July, 2024;
originally announced July 2024.
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Thermal conversion of ultrathin nickel hydroxide for wide bandgap 2D nickel oxides
Authors:
Lu Ping,
Nicholas Russo,
Zifan Wang,
Ching-Hsiang Yao,
Kevin E. Smith,
Xi Ling
Abstract:
Wide bandgap (WBG) semiconductors (Eg >2.0 eV) are integral to the advancement of next generation electronics, optoelectronics, and power industries, owing to their capability for high temperature operation, high breakdown voltage and efficient light emission. Enhanced power efficiency and functional performance can be attained through miniaturization, specifically via the integration of device fa…
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Wide bandgap (WBG) semiconductors (Eg >2.0 eV) are integral to the advancement of next generation electronics, optoelectronics, and power industries, owing to their capability for high temperature operation, high breakdown voltage and efficient light emission. Enhanced power efficiency and functional performance can be attained through miniaturization, specifically via the integration of device fabrication into two-dimensional (2D) structure enabled by WBG 2D semiconductors. However, as an essential subgroup of WBG semiconductors, 2D transition metal oxides (TMOs) remain largely underexplored in terms of physical properties and applications in 2D opto-electronic devices, primarily due to the scarcity of sufficiently large 2D crystals. Thus, our goal is to develop synthesis pathways for 2D TMOs possessing large crystal domain (e.g. >10 nm), expanding the 2D TMOs family and providing insights for future engineering of 2D TMOs. Here, we demonstrate the synthesis of WBG 2D nickel oxide (NiO) (Eg > 2.7 eV) thermally converted from 2D nickel hydroxide (Ni(OH)2) with the lateral domain size larger than 10 um. Moreover, the conversion process is investigated using various microscopic techniques such as atomic force microscopy (AFM), Raman spectroscopy, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), providing significant insights on the morphology and structure variation under different oxidative conditions. The electronic structure of the converted NixOy is further investigated using multiple soft X-ray spectroscopies, such as X-ray absorption (XAS) and emission spectroscopies (XES).
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Submitted 15 April, 2024;
originally announced April 2024.
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A Clock Transition in the Cr$_7$Mn Molecular Nanomagnet
Authors:
Charles A. Collett,
Kai-Isaak Ellers,
Nicholas Russo,
Kevin R. Kittilstved,
Grigore A. Timco,
Richard E. P. Winpenny,
Jonathan R. Friedman
Abstract:
A viable qubit must have a long coherence time $T_2$. In molecular nanomagnets $T_2$ is often limited at low temperatures by the presence of dipole and hyperfine interactions, which are often mitigated through sample dilution, chemical engineering and isotope substitution in synthesis. Atomic-clock transitions offer another route to reducing decoherence from environmental fields by reducing the ef…
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A viable qubit must have a long coherence time $T_2$. In molecular nanomagnets $T_2$ is often limited at low temperatures by the presence of dipole and hyperfine interactions, which are often mitigated through sample dilution, chemical engineering and isotope substitution in synthesis. Atomic-clock transitions offer another route to reducing decoherence from environmental fields by reducing the effective susceptibility of the working transition to field fluctuations. The Cr$_7$Mn molecular nanomagnet, a heterometallic ring, features a clock transition at zero field. Both continuous-wave and spin-echo electron-spin resonance experiments on Cr$_7$Mn samples diluted via co-crystallization, show evidence of the effects of the clock transition with a maximum $T_2\sim350$ ns at 1.8 K. We discuss improvements to the experiment that may increase $T_2$ further.
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Submitted 11 December, 2018;
originally announced December 2018.
