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Polarization spontaneous and piezo: fundamentals and their implementation in ab initio calculations
Authors:
Pawel Strak,
Pawel Kempisty,
Konrad Sakowski,
Jacek Piechota,
Izabella Grzegory,
Eva Monroy,
Agata Kaminska,
Stanislaw Krukowski
Abstract:
Fundamental properties of spontaneous and piezo polarization are reformulated and critically reviewed. It was demonstrated that Landau definition of polarization as a dipole density could be used to the infinite systems. The difference between the bulk polarization and surface polarity are distinguished thus creating clear identification of both components. The local model of spontaneous polarizat…
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Fundamental properties of spontaneous and piezo polarization are reformulated and critically reviewed. It was demonstrated that Landau definition of polarization as a dipole density could be used to the infinite systems. The difference between the bulk polarization and surface polarity are distinguished thus creating clear identification of both components. The local model of spontaneous polarization was created and used to calculate spontaneous polarization as the electric dipole density. It was shown that the proposed local model correctly predicts c-axis spontaneous polarization values of the nitride wurtzite semiconductors. It was also shown that the proposed model predicts zero polarization in the plane perpendicular to the c-axis, in accordance with symmetry requirements. In addition, the model results are in accordance with polarization equal to zero for zinc blende lattice. These data confirm the basic correctness of the proposed model. The spontaneous polarization values obtained for all wurtzite III nitrides (BN, AlN, GaN and InN) are in basic agreement with the earlier calculations using Berry phase and slab models of Bernardini et al. {Bernardini et al. Phys Rev B 56 (2001) R10024 & 63 (2001) 193201} but not with Dreyer et al. {Dreyer et al. Phys. Rev X 6 (2016) 021038}. Wurtzite nitride superlattices ab initio calculations were performed to derive polarization-induced fields in the coherently strained lattices showing good agreement with the polarization values. The strained superlattice data were used to determine the piezoelectric parameters of wurtzite nitrides obtaining the values that were in basic agreement with the earlier data. Zinc blende superlattices were also modeled using ab initio calculations showing results that are in agreement with the absence of polarization of all nitrides in zinc blende symmetry.
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Submitted 1 July, 2024;
originally announced July 2024.
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Coulomb contribution to Shockley-Read-Hall (SRH) recombination
Authors:
Konrad Sakowski,
Pawel Strak,
Pawel Kempisty,
Jacek Piechota,
Izabella Grzegory,
Piotr Perlin,
Eva Monroy,
Agata Kaminska,
Stanislaw Krukowski
Abstract:
Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination is reformulated. The introduced model considers Coulomb attraction between charged deep defect and the approaching free carrier, showing that this effect may cause considerable increase of the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates.…
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Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination is reformulated. The introduced model considers Coulomb attraction between charged deep defect and the approaching free carrier, showing that this effect may cause considerable increase of the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates. It is demonstrated that in the typical semiconductor device or semiconductor medium, the SRH recombination cannot be neglected at low temperatures. The SRH is more effective in the case of low doped semiconductors. Effective screening by mobile carrier density could reduce the effect, leading to SRH rate increase.
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Submitted 26 January, 2024; v1 submitted 18 October, 2023;
originally announced October 2023.
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Macrosteps dynamics and the growth of crystals and epitaxial layers
Authors:
Stanislaw Krukowski,
Konrad Sakowski,
Paweł Strak,
Paweł Kempisty,
Jacek Piechota,
Izabella Grzegory
Abstract:
Step pattern stability of the vicinal surfaces during growth was analyzed using various surface kinetic models. It was shown that standard analysis of the vicinal surfaces provides no indication on the possible step coalescence and therefore could not be used to elucidate macrostep creation during growth. A scenario of the instability, leading go macrostep creation was based on the dynamics of the…
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Step pattern stability of the vicinal surfaces during growth was analyzed using various surface kinetic models. It was shown that standard analysis of the vicinal surfaces provides no indication on the possible step coalescence and therefore could not be used to elucidate macrostep creation during growth. A scenario of the instability, leading go macrostep creation was based on the dynamics of the step train. The critical is step motion at the rear of the train which leads to double and multiple step creation. The condition is that the step density ratio in and out of the train lower than 2 prevents double step formation irrespective of the kinetics. For higher step density ratio low density of the step promotes single step stability. Fast step kinetics from lower terrace stabilizes the single steps slow (high barrier) is promoting step coalescence. The incorporation kinetics from upper terrace role is close to neutral. The creation of double step creates slow the step in front to accelerate and catch the previous double step while those behind catch up the double step creating multistep structure. The multistep are not mobile as the alimentation leads to emission of single step which moves forward. The final structure consist of macrosteps and superterraces with the number of single steps moving forward. Thus the single step motion is essential crystal growth mode despite the presence of the macrosteps. The macrostep are prone to creation of the overhangs which results from surface dynamics coupling to impingement from the mother phase. The angular preferential access of the bulk material to the macrostep edge, leads to diffusive instability. Therefore it is expected that harmful influence of the macrosteps by creation of inclusions and dislocation is stronger during growth from the liquid phase.
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Submitted 11 January, 2023; v1 submitted 22 March, 2022;
originally announced March 2022.
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Polarization doping ab initio verification of the concept charge conservation and nonlocality
Authors:
Ashfaq Ahmad,
Pawel Strak,
Pawel Kempisty,
Konrad Sakowski,
Jacek Piechota,
Yoshihiro Kangawa,
Izabella Grzegory,
Michal Leszczynski,
Zbigniew R. Zytkiewicz,
Grzegorz Muziol,
Eva Monroy,
Stanislaw Krukowski,
Agata Kaminska
Abstract:
In this work, we study the emergence of polarization doping in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation law applies for fixed and mobile charges separately, leading to nonlocal compensation phenomena involving bulk fixed and mobile charge and polarization sheet charge at the heterointerfaces. The magnitude of the effect allo…
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In this work, we study the emergence of polarization doping in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation law applies for fixed and mobile charges separately, leading to nonlocal compensation phenomena involving bulk fixed and mobile charge and polarization sheet charge at the heterointerfaces. The magnitude of the effect allows obtaining technically viable mobile charge density for optoelectronic devices without impurity doping (donors or acceptors). Therefore, it provides an additional tool for the device designer, with the potential to attain high conductivities: high carrier concentrations can be obtained even in materials with high dopant ionization energies, and the mobility is not limited by scattering at ionized impurities.
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Submitted 22 March, 2022; v1 submitted 2 June, 2021;
originally announced June 2021.
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An influence of parallel electric field on the dispersion relation of graphene - a new route to Dirac logics
Authors:
Stanisław Krukowski,
Jakub Sołtys,
Jolanta Borysiuk,
Jacek Piechota
Abstract:
Ab initio density functional theory (DFT) simulations were used to investigate an influence of electric field, parallel to single and multilayer graphene on its electron dispersion relations close to K point. It was shown that for both single layer and AAAA stacking multilayer graphene under influence of parallel field the dispersion relations transform to nonlinear. The effect, associated with th…
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Ab initio density functional theory (DFT) simulations were used to investigate an influence of electric field, parallel to single and multilayer graphene on its electron dispersion relations close to K point. It was shown that for both single layer and AAAA stacking multilayer graphene under influence of parallel field the dispersion relations transform to nonlinear. The effect, associated with the hexagonal symmetry breaking, opens new route to high speed transistors and logical devices working in Dirac regime. The implementation of such device is presented.
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Submitted 18 September, 2012;
originally announced September 2012.
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Role of structure of C-terminated 4H-SiC(000) surface in growth of graphene layers - transmission electron microscopy and density functional theory studies
Authors:
Jolanta Borysiuk,
Jakub Sołtys,
Rafal Bożek,
Jacek Piechota,
Stanislaw Krukowski,
Wlodzimierz Strupinski,
Jacek M. Baranowski,
Roman Stepniewski
Abstract:
Principal structural defects in graphene layers, synthesized on a carbon-terminated face, i.e. the SiC(000) face of a 4H-SiC substrate, are investigated using microscopic methods. Results of high-resolution transmission electron microscopy (HRTEM) reveal their atomic arrangement. Mechanism of such defects creation, directly related to the underlying crystallographic structure of the SiC substrate,…
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Principal structural defects in graphene layers, synthesized on a carbon-terminated face, i.e. the SiC(000) face of a 4H-SiC substrate, are investigated using microscopic methods. Results of high-resolution transmission electron microscopy (HRTEM) reveal their atomic arrangement. Mechanism of such defects creation, directly related to the underlying crystallographic structure of the SiC substrate, is elucidated. The connection between the 4H-SiC(000) surface morphology, including the presence of the single atomic steps, the sequences of atomic steps, and also the macrosteps, and the corresponding emergence of planar defective structure (discontinuities of carbon layers and wrinkles) is revealed. It is shown that disappearance of the multistep island leads to the creation of wrinkles in the graphene layers. The density functional theory (DFT) calculation results show that the diffusion of both silicon and carbon atoms is possible on a Si-terminated SiC surface at a high temperature close to 1600°C. The creation of buffer layer at the Si-terminated surface effectively blocks horizontal diffusion, preventing growth of thick graphene layer at this face. At the carbon terminated SiC surface, the buffer layer is absent leaving space for effective horizontal diffusion of both silicon and carbon atoms. DFT results show that excess carbon atoms converts a topmost carbon layer to sp2 bonded configuration, liberating Si atoms in barrierless process. The silicon atoms escape through the channels created at the bending layers defects, while the carbon atoms are incorporated into the growing graphene layers. These results explain growth of thick graphene underneath existing graphene cover and also the creation of the principal defects at the C-terminated SiC(0001) surface
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Submitted 30 September, 2011;
originally announced September 2011.
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Stacking Sequence Dependence of Graphene Layers on SiC(000-1) - Experimental and Theoretical Investigation
Authors:
Jolanta Borysiuk,
Jakub Sołtys,
Jacek Piechota
Abstract:
Different stacking sequences of graphene are investigated using a combination of experimental and theoretical methods. The high-resolution transmission electron microscopy (HRTEM) of the stacking sequence of several layers of graphene, formed on the C-terminated 4H-SiC(0001) surface, was used to determine the stacking sequence and the interlayer distances. These data prove that the three metastabl…
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Different stacking sequences of graphene are investigated using a combination of experimental and theoretical methods. The high-resolution transmission electron microscopy (HRTEM) of the stacking sequence of several layers of graphene, formed on the C-terminated 4H-SiC(0001) surface, was used to determine the stacking sequence and the interlayer distances. These data prove that the three metastable configurations exist: ABAB, AAAA, ABCA. In accordance to these, findings those three cases were considered theoretically, using Density Functional Theory calculations comparing graphene sheets, freestanding and positioned on the SiC(0001) substrate. The total energies were calculated, the most stable structure was identified and the electronic band structure was obtained. The four graphene layer electron band structure depends crucially on the stacking: for the ABAB and ABCA stacking, the bands, close to the K point, are characterized by the hyperbolic dispersion relation while the AA stacking the dispersion in this region is linear, similar to that of a single graphene layer. It was also shown that the linear dispersion relation is preserved in the presence of the SiC substrate, and also for different distances between adjacent carbon layers.
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Submitted 28 June, 2010; v1 submitted 5 June, 2010;
originally announced June 2010.
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Density functional theory study of quasi-free-standing graphene layer on 4H-SiC(0001) surface decoupled by hydrogen atoms
Authors:
Jakub Soltys,
Jacek Piechota,
Michal Lopuszynski,
Stanislaw Krukowski
Abstract:
Epitaxial graphene, grown on SiC(0001) surface, has been widely studied both experimentally and theoretically. It was found that first epitaxial graphene layer in such structures is a buffer layer i.e. there are no characteristic Dirac cones in the band structure associated with it. However, C. Riedl et al. (Phys. Rev. Lett. 103, 246804 (2009)) in their experimental work observed recently that h…
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Epitaxial graphene, grown on SiC(0001) surface, has been widely studied both experimentally and theoretically. It was found that first epitaxial graphene layer in such structures is a buffer layer i.e. there are no characteristic Dirac cones in the band structure associated with it. However, C. Riedl et al. (Phys. Rev. Lett. 103, 246804 (2009)) in their experimental work observed recently that hydrogen intercalation of SiC-graphene samples can recover electronic properties typical to selfstanding graphene. The possible scenarios of hydrogen intercalation inducing graphene layer decoupling, including both the hydrogen penetration paths and energetically stable positions of hydrogen atoms, were modeled in ab initio DFT calculations. From the obtained results it follows that, due to intercalation, the graphene layer moves away to achieve about 3.9 A distance from the SiC surface. Electronic band structure, calculated for such quasi free standing graphene, exhibits Dirac-cone behavior which is in agreement with ARPES measurements.
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Submitted 25 March, 2010; v1 submitted 25 February, 2010;
originally announced February 2010.
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A comparative DFT study of electronic properties of 2H-, 4H- and 6H-SiC(0001) and SiC(000-1) clean surfaces: Significance of the surface Stark effect
Authors:
Jakub Soltys,
Jacek Piechota,
Michal Lopuszynski,
Stanislaw Krukowski
Abstract:
Electric field, uniform within the slab, emerging due to Fermi level pinning at its both sides is analyzed using DFT simulations of the SiC surface slabs of different thickness. It is shown that for thicker slab the field is nonuniform and this fact is related to the surface state charge. Using the electron density and potential profiles it is proved that for high precision simulations it is nec…
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Electric field, uniform within the slab, emerging due to Fermi level pinning at its both sides is analyzed using DFT simulations of the SiC surface slabs of different thickness. It is shown that for thicker slab the field is nonuniform and this fact is related to the surface state charge. Using the electron density and potential profiles it is proved that for high precision simulations it is necessary to take into account enough number of the Si-C layers. We show that using 12 diatomic layers leads to satisfactory results. It is also demonstrated that the change of the opposite side slab termination, both by different type of atoms or by their location, can be used to adjust electric field within the slab, creating a tool for simulation of surface properties, depending on the doping in the bulk of semiconductor. Using these simulations it was found that, depending on the electric field, the energy of the surface states changes in a different way than energy of the bulk states. This criterion can be used to distinguish Shockley and Tamm surface states. The electronic properties, i.e. energy and type of surface states of the three clean surfaces: 2H-, 4H-, 6H-SiC(0001), and SiC($000 \bar{1}$) are analyzed and compared using field dependent DFT simulations.
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Submitted 30 November, 2009; v1 submitted 24 July, 2009;
originally announced July 2009.
