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Revealing the Electronic Structure of NiPS$_3$ through Synchrotron-Based ARPES and Alkali Metal Dosing
Authors:
Yifeng Cao,
Qishuo Tan,
Yucheng Guo,
Clóvis Guerim Vieira,
Mário S. C. Mazzon,
Jude Laverock,
Nicholas Russo,
Hongze Gao,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Jinghua Guo,
Ming Yi,
Matheus J. S. Matos,
Xi Ling,
Kevin E. Smith
Abstract:
This study presents a comprehensive analysis of the band structure in NiPS$_3$, a van der Waals layered antiferromagnet, utilizing high-resolution synchrotron-based angle-resolved photoemission spectroscopy (ARPES) and corroborative density functional theory (DFT) calculations. By tuning the parameters of the light source, we obtained a very clear and wide energy range band structure of NiPS$_3$.…
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This study presents a comprehensive analysis of the band structure in NiPS$_3$, a van der Waals layered antiferromagnet, utilizing high-resolution synchrotron-based angle-resolved photoemission spectroscopy (ARPES) and corroborative density functional theory (DFT) calculations. By tuning the parameters of the light source, we obtained a very clear and wide energy range band structure of NiPS$_3$. Comparison with DFT calculations allows for the identification of the orbital character of the observed bands. Our DFT calculations perfectly match the experimental results, and no adaptations were made to the calculations based on the experimental outcomes. The appearance of novel electronic structure upon alkali metal dosing (AMD) were also obtained in this ARPES study. Above valence band maximum, structure of conduction bands and bands from defect states were firstly observed in NiPS$_3$. We provide the direct determination of the band gap of NiPS$_3$ as 1.3 eV from the band structure by AMD. In addition, detailed temperature dependent ARPES spectra were obtained across a range that spans both below and above the Néel transition temperature of NiPS$_3$. We found that the paramagnetic and antiferromagnetic states have almost identical spectra, indicating the highly localized nature of Ni $d$ states.
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Submitted 2 July, 2024;
originally announced July 2024.
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Spectral evidence for NiPS3 as a Mott-Hubbard insulator
Authors:
Yifeng Cao,
Nicholas Russo,
Qishuo Tan,
Xi Ling,
Jinghua Guo,
Yi-de Chuang,
Kevin E. Smith
Abstract:
The layered van der Waals trichalcogenide NiPS3 has attracted widespread attention due to its unique optical, magnetic, and electronic properties. The complexity of NiPS3 itself, however, has also led to ongoing debates regarding its characteristics such as the existence of self-doped ligand holes. In this study, X-ray absorption spectroscopy and resonant inelastic X-ray scattering have been appli…
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The layered van der Waals trichalcogenide NiPS3 has attracted widespread attention due to its unique optical, magnetic, and electronic properties. The complexity of NiPS3 itself, however, has also led to ongoing debates regarding its characteristics such as the existence of self-doped ligand holes. In this study, X-ray absorption spectroscopy and resonant inelastic X-ray scattering have been applied to investigate the electronic structure of NiPS3. With the aid of theoretical calculations using the charge-transfer multiplet model, we provide experimental evidence for NiPS3 being a Mott-Hubbard insulator rather than a charge-transfer insulator. Moreover, we explain why some previous XAS studies have concluded that NiPS3 is a charge-transfer insulator by comparing surface and bulk sensitive spectra.
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Submitted 1 July, 2024;
originally announced July 2024.
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Thermal conversion of ultrathin nickel hydroxide for wide bandgap 2D nickel oxides
Authors:
Lu Ping,
Nicholas Russo,
Zifan Wang,
Ching-Hsiang Yao,
Kevin E. Smith,
Xi Ling
Abstract:
Wide bandgap (WBG) semiconductors (Eg >2.0 eV) are integral to the advancement of next generation electronics, optoelectronics, and power industries, owing to their capability for high temperature operation, high breakdown voltage and efficient light emission. Enhanced power efficiency and functional performance can be attained through miniaturization, specifically via the integration of device fa…
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Wide bandgap (WBG) semiconductors (Eg >2.0 eV) are integral to the advancement of next generation electronics, optoelectronics, and power industries, owing to their capability for high temperature operation, high breakdown voltage and efficient light emission. Enhanced power efficiency and functional performance can be attained through miniaturization, specifically via the integration of device fabrication into two-dimensional (2D) structure enabled by WBG 2D semiconductors. However, as an essential subgroup of WBG semiconductors, 2D transition metal oxides (TMOs) remain largely underexplored in terms of physical properties and applications in 2D opto-electronic devices, primarily due to the scarcity of sufficiently large 2D crystals. Thus, our goal is to develop synthesis pathways for 2D TMOs possessing large crystal domain (e.g. >10 nm), expanding the 2D TMOs family and providing insights for future engineering of 2D TMOs. Here, we demonstrate the synthesis of WBG 2D nickel oxide (NiO) (Eg > 2.7 eV) thermally converted from 2D nickel hydroxide (Ni(OH)2) with the lateral domain size larger than 10 um. Moreover, the conversion process is investigated using various microscopic techniques such as atomic force microscopy (AFM), Raman spectroscopy, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), providing significant insights on the morphology and structure variation under different oxidative conditions. The electronic structure of the converted NixOy is further investigated using multiple soft X-ray spectroscopies, such as X-ray absorption (XAS) and emission spectroscopies (XES).
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Submitted 15 April, 2024;
originally announced April 2024.
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Observation of three-state nematicity and domain evolution in atomically-thin antiferromagnetic NiPS3
Authors:
Qishuo Tan,
Connor A. Occhialini,
Hongze Gao,
Jiaruo Li,
Hikari Kitadai,
Riccardo Comin,
Xi Ling
Abstract:
Nickel phosphorus trisulfide (NiPS3), a van der Waals (vdW) 2D antiferromagnet, has captivated enormous attention for its intriguing physics in recent years. However, despite its fundamental importance in physics of magnetism and promising potential for technological applications, the study of magnetic domains in NiPS3 down to atomically thin is still lacking. Here, we report the layer-dependent m…
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Nickel phosphorus trisulfide (NiPS3), a van der Waals (vdW) 2D antiferromagnet, has captivated enormous attention for its intriguing physics in recent years. However, despite its fundamental importance in physics of magnetism and promising potential for technological applications, the study of magnetic domains in NiPS3 down to atomically thin is still lacking. Here, we report the layer-dependent magnetic characteristics and magnetic domains within antiferromagnetic NiPS3 by employing linear dichroism (LD) combined with polarized microscopy, spin-correlated photoluminescence (PL), and Raman spectroscopy. Our results reveal the existence of the paramagnetic-to-antiferromagnetic phase transition in bulk to bilayer NiPS3 with stronger spin fluctuation in thinner NiPS3. Furthermore, our study identifies three distinct antiferromagnetic domains within atomicallythin NiPS3 and captures the thermally-activated domain evolution. Our findings provide crucial insights for the development of antiferromagnetic spintronics and related technologies.
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Submitted 27 February, 2024; v1 submitted 20 November, 2023;
originally announced November 2023.
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Imaging Strain-Localized Single-Photon Emitters in Layered GaSe below the Diffraction Limit
Authors:
Weijun Luo,
Benjamin Lawrie,
Alexander Puretzky,
Qishuo Tan,
Gage Eichman,
Edward Mcgee,
Anna Swan,
Liangbo Liang,
Xi Ling
Abstract:
Nanoscale strain control of exciton funneling is an increasingly critical tool for the scalable production of single photon emitters (SPEs) in two-dimensional materials. However, conventional far-field optical microscopies remain constrained in spatial resolution by the diffraction limit and thus can only provide a limited description of nanoscale strain localization of SPEs. Here, we quantify the…
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Nanoscale strain control of exciton funneling is an increasingly critical tool for the scalable production of single photon emitters (SPEs) in two-dimensional materials. However, conventional far-field optical microscopies remain constrained in spatial resolution by the diffraction limit and thus can only provide a limited description of nanoscale strain localization of SPEs. Here, we quantify the effects of nanoscale heterogeneous strain on the energy and brightness of GaSe SPEs on nanopillars with correlative cathodoluminescence, photoluminescence, and atomic force microscopies supported by density functional theory simulations. We report the strain-localized SPEs have a broad range of emission wavelengths from 620 nm to 900 nm. We reveal substantial strain-controlled SPE wavelength tunability over a ~ 100 nm spectral range and two-orders of magnitude enhancement in the SPE brightness at the pillar center due to Type-I exciton funneling. In addition, we show that radiative biexciton cascade processes contribute to the observed CL photon superbunching. Also, the measured GaSe SPE photophysics after electron beam exposure shows the excellent stability of these SPEs. We anticipate this insight into nanoscale strain control of two-dimensional SPEs will guide the development of truly deterministic quantum photonics.
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Submitted 4 May, 2023;
originally announced May 2023.
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Van der Waals device integration beyond the limits of van der Waals forces via adhesive matrix transfer
Authors:
Peter F. Satterthwaite,
Weikun Zhu,
Patricia Jastrzebska-Perfect,
Melbourne Tang,
Hongze Gao,
Hikari Kitadai,
Ang-Yu Lu,
Qishuo Tan,
Shin-Yi Tang,
Yu-Lun Chueh,
Chia-Nung Kuo,
Chin Shan Lue,
Jing Kong,
Xi Ling,
Farnaz Niroui
Abstract:
Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and other materials are core to emerging optical and electronic devices. Their direct fabrication is, however, challenged as the vdW forces are weak and cannot be tuned to accommodate integration of arbitrary layers without solvents, sacrificial-layers or high-temperatures, steps that can introduce damage. To address these limita…
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Pristine van der Waals (vdW) interfaces between two-dimensional (2D) and other materials are core to emerging optical and electronic devices. Their direct fabrication is, however, challenged as the vdW forces are weak and cannot be tuned to accommodate integration of arbitrary layers without solvents, sacrificial-layers or high-temperatures, steps that can introduce damage. To address these limitations, we introduce a single-step 2D material-to-device integration approach in which forces promoting transfer are decoupled from the vdW forces at the interface of interest. We use this adhesive matrix transfer to demonstrate conventionally-forbidden direct integration of diverse 2D materials (MoS2, WSe2, PtS2, GaS) with dielectrics (SiO2, Al2O3), and scalable, aligned heterostructure formation, both foundational to device development. We then demonstrate a single-step integration of monolayer-MoS2 into arrays of transistors. With no exposure to polymers or solvents, clean interfaces and pristine surfaces are preserved, which can be further engineered to demonstrate both n- and p-type behavior. Beyond serving as a platform to probe the intrinsic properties of sensitive nanomaterials without the influence of processing steps, our technique allows efficient formation of unconventional device form-factors, with an example of flexible transistors demonstrated.
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Submitted 12 February, 2023;
originally announced February 2023.
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Spin-state Directed Synthesis of >20 micrometers 2D Layered Transition Metal Hydroxides via Edge-on Condensation
Authors:
Lu Ping,
Gillian E. Minarik,
Hongze Gao,
Jun Cao,
Tianshu Li,
Hikari Kitadai,
Xi Ling
Abstract:
Layered transition metal hydroxides (LTMHs) with transition metal centers sandwiched between layers of coordinating hydroxide anions have attracted considerable interest for their potential in developing clean energy sources and storage technologies. However, two dimensional (2D) LTMHs remain largely unstudied in terms of their physical properties and the applications in electronic devices. Here,…
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Layered transition metal hydroxides (LTMHs) with transition metal centers sandwiched between layers of coordinating hydroxide anions have attracted considerable interest for their potential in developing clean energy sources and storage technologies. However, two dimensional (2D) LTMHs remain largely unstudied in terms of their physical properties and the applications in electronic devices. Here, directed by the relationship of the spin state of 3d transition metal (TM) ions such as Ni, Co, Cu, and the corresponding geometry of the crystal field, we discover that Ni2+ with perfect Oh symmetry is ideal for intraplanar growth, leading to the achievement of >20 μm α-Ni(OH)2 2D crystals with high yield, which are the largest 2D domains reported so far. We also report the successful synthesis of 2D Co(OH)2 crystals (>40 μm) with less yield due to the slight geometry distortion resulted from uneven number of electrons. Moreover, the detailed structural characterization of synthesized α-Ni(OH)2 are performed; the optical band gap energy is extrapolated as 2.54 eV from optical absorption measurements and is measured as 2.50 eV from reflected electrons energy loss spectroscopy (REELS), suggesting the potential as insulating 2D dielectric material for electronic devices. Furthermore, key parameters of the hydrothermal reaction including soaking temperature, starting pH and cooling rate, are systematically tuned to understand their effects on morphological and crystallographic perspectives, allowing the establishment of a 2D growth mechanism. This work demonstrates a scalable pathway to synthesize large 2D LTMHs from simple methods, paving the way for the study of fundamental physical properties and device applications of 2D LTMHs.
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Submitted 25 November, 2022;
originally announced November 2022.
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Deterministic Localization of Strain-induced Single-photon Emitters in Multilayer GaSe
Authors:
Weijun Luo,
Alexander Puretzky,
Benjamin Lawrie,
Qishuo Tan,
Hongze Gao,
Zhuofa Chen,
Alexander Sergienko,
Anna Swan,
Liangbo Liang,
Xi Ling
Abstract:
Nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs)(1, 2). However, quantum emitters in monolayer TMDCs are typically unstable in ambient conditions. Multilayer two-dimensional (2D) TMDCs could be a solution, but they suffer from low quantum efficiency, resulting in low brightness of the SPEs. Her…
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Nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs)(1, 2). However, quantum emitters in monolayer TMDCs are typically unstable in ambient conditions. Multilayer two-dimensional (2D) TMDCs could be a solution, but they suffer from low quantum efficiency, resulting in low brightness of the SPEs. Here, we report the deterministic spatial localization of strain-induced single-photon emitters in multilayer GaSe by nanopillar arrays. The strain-controlled quantum confinement effect introduces well-isolated sub-bandgap photoluminescence and corresponding suppression of the broad band edge photoluminescence. Clear photon-antibunching behavior is observed from the quantum dot-like GaSe sub-bandgap exciton emission at 3.5 Kelvin. The strain-dependent confinement potential and the brightness are found to be strongly correlated, suggesting a promising route for tuning and controlling SPEs. The comprehensive investigations of strain-engineered GaSe SPEs provide a solid foundation for the development of 2D devices for quantum photonic technologies.
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Submitted 27 October, 2022;
originally announced October 2022.
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Enhanced Raman Scattering on Functionalized Graphene Substrates
Authors:
Václav Valeš,
Petr Kovaříček,
Michaela Fridrichová,
Xiang Ji,
Xi Ling,
Jing Kong,
Mildred S. Dresselhaus,
Martin Kalbáč
Abstract:
The graphene-enhanced Raman scattering of Rhodamine 6G molecules on pristine, fluorinated and 4-nitrophenyl functionalized graphene substrates was studied. The uniformity of the Raman signal enhancement was studied by making large Raman maps. The relative enhancement of the Raman signal is demonstrated to be dependent on the functional groups, which was rationalized by the different doping levels…
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The graphene-enhanced Raman scattering of Rhodamine 6G molecules on pristine, fluorinated and 4-nitrophenyl functionalized graphene substrates was studied. The uniformity of the Raman signal enhancement was studied by making large Raman maps. The relative enhancement of the Raman signal is demonstrated to be dependent on the functional groups, which was rationalized by the different doping levels of pristine, fluorinated and 4-nitrophenyl functionalized graphene substrates. The impact of the Fermi energy of graphene and the phonon energy of the molecules was considered together for the first time in order to explain the enhancement. Such approach enables to understand the enhancement without assuming anything about the uniformity of the molecules on the graphene surface. The agreement between the theory and our measured data was further demonstrated by varying excitation energy.
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Submitted 26 July, 2021;
originally announced July 2021.
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Differential electron yield imaging with STXM
Authors:
William A. Hubbard,
Jared J. Lodico,
Xin Yi Ling,
Brian Zutter,
Young-Sang Yu,
David Shapiro,
B. C. Regan
Abstract:
Total electron yield (TEY) imaging is an established scanning transmission X-ray microscopy (STXM) technique that gives varying contrast based on a sample's geometry, elemental composition, and electrical conductivity. However, the TEY-STXM signal is determined solely by the electrons that the beam ejects from the sample. A related technique, X-ray beam-induced current (XBIC) imaging, is sensitive…
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Total electron yield (TEY) imaging is an established scanning transmission X-ray microscopy (STXM) technique that gives varying contrast based on a sample's geometry, elemental composition, and electrical conductivity. However, the TEY-STXM signal is determined solely by the electrons that the beam ejects from the sample. A related technique, X-ray beam-induced current (XBIC) imaging, is sensitive to electrons and holes independently, but requires electric fields in the sample. Here we report that multi-electrode devices can be wired to produce differential electron yield (DEY) contrast, which is also independently sensitive to electrons and holes, but does not require an electric field. Depending on whether the region illuminated by the focused STXM beam is better connected to one electrode or another, the DEY-STXM contrast changes sign. DEY-STXM images thus provide a vivid map of a device's connectivity landscape, which can be key to understanding device function and failure. To demonstrate an application in the area of failure analysis, we image a 100~nm, lithographically-defined aluminum nanowire that has failed after being stressed with a large current density.
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Submitted 27 September, 2020;
originally announced September 2020.
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A Cleanroom in a Glovebox
Authors:
Mason J. Gray,
Narendra Kumar,
Ryan O'Connor,
Marcel Hoek,
Erin Sheridan,
Meaghan C. Doyle,
Marisa L. Romanelli,
Gavin B. Osterhoudt,
Yiping Wang,
Vincent Plisson,
Shiming Lei,
Ruidan Zhong,
Bryan Rachmilowitz,
He Zhao,
Hikari Kitadai,
Steven Shepard,
Leslie M. Schoop,
G. D. Gu,
Ilija Zeljkovic,
Xi Ling,
K. S. Burch
Abstract:
The exploration of new materials, novel quantum phases, and devices requires ways to prepare cleaner samples with smaller feature sizes. Initially, this meant the use of a cleanroom that limits the amount and size of dust particles. However, many materials are highly sensitive to oxygen and water in the air. Furthermore, the ever-increasing demand for a quantum workforce, trained and able to use t…
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The exploration of new materials, novel quantum phases, and devices requires ways to prepare cleaner samples with smaller feature sizes. Initially, this meant the use of a cleanroom that limits the amount and size of dust particles. However, many materials are highly sensitive to oxygen and water in the air. Furthermore, the ever-increasing demand for a quantum workforce, trained and able to use the equipment for creating and characterizing materials, calls for a dramatic reduction in the cost to create and operate such facilities. To this end, we present our cleanroom-in-a-glovebox, a system which allows for the fabrication and characterization of devices in an inert argon atmosphere. We demonstrate the ability to perform a wide range of characterization as well as fabrication steps, without the need for a dedicated room, all in an argon environment. Connection to a vacuum suitcase is also demonstrated to enable receiving from and transfer to various ultra-high vacuum (UHV) equipment including molecular-beam epitaxy (MBE) and scanning tunneling microscopy (STM).
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Submitted 27 July, 2020;
originally announced July 2020.
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Modulation Doping via a 2d Atomic Crystalline Acceptor
Authors:
Yiping Wang,
Jesse Balgley,
Eli Gerber,
Mason Gray,
Narendra Kumar,
Xiaobo Lu,
Jia-Qiang Yan,
Arash Fereidouni,
Rabindra Basnet,
Seok Joon Yun,
Dhavala Suri,
Hikari Kitadai,
Takashi Taniguchi,
Kenji Watanabe,
Xi Ling,
Jagadeesh Moodera,
Young Hee Lee,
Hugh O. H. Churchill,
Jin Hu,
Li Yang,
Eun-Ah Kim,
David G. Mandrus,
Erik A. Henriksen,
Kenneth S. Burch
Abstract:
Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with \textit{ab initio} calculations establish the large work function and narrow bands of $α$-RuCl$_3$ enable modulation doping of exfoliated, chemical vapor de…
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Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with \textit{ab initio} calculations establish the large work function and narrow bands of $α$-RuCl$_3$ enable modulation doping of exfoliated, chemical vapor deposition (CVD), and molecular beam epitaxy (MBE) materials. Short-ranged lateral doping (${\leq}65\ \text{nm}$) and high homogeneity are achieved in proximate materials with a single layer of \arucl. This leads to the highest monolayer graphene (mlg) mobilities ($4,900\ \text{cm}^2/ \text{Vs}$) at these high hole densities ($3\times10^{13}\ \text{cm}^{-2}$); and yields larger charge transfer to bilayer graphene (blg) ($6\times10^{13}\ \text{cm}^{-2}$). We further demonstrate proof of principle optical sensing, control via twist angle, and charge transfer through hexagonal boron nitride (hBN).
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Submitted 15 July, 2020; v1 submitted 13 July, 2020;
originally announced July 2020.
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Spin-Induced Linear Polarization of Excitonic Emission in Antiferromagnetic van der Waals Crystals
Authors:
Xingzhi Wang,
Jun Cao,
Zhengguang Lu,
Arielle Cohen,
Hikari Kitadai,
Tianshu Li,
Matthew Wilson,
Chun Hung Lui,
Dmitry Smirnov,
Sahar Sharifzadeh,
Xi Ling
Abstract:
Antiferromagnets display enormous potential in spintronics owing to its intrinsic nature, including terahertz resonance, multilevel states, and absence of stray fields. Combining with the layered nature, van der Waals (vdW) antiferromagnets hold the promise in providing new insights and new designs in two-dimensional (2D) spintronics. The zero net magnetic moments of vdW antiferromagnets strengthe…
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Antiferromagnets display enormous potential in spintronics owing to its intrinsic nature, including terahertz resonance, multilevel states, and absence of stray fields. Combining with the layered nature, van der Waals (vdW) antiferromagnets hold the promise in providing new insights and new designs in two-dimensional (2D) spintronics. The zero net magnetic moments of vdW antiferromagnets strengthens the spin stability, however, impedes the correlation between spin and other excitation elements, like excitons. Such coupling is urgently anticipated for fundamental magneto-optical studies and potential opto-spintronic devices. Here, we report an ultra-sharp excitonic emission with excellent monochromaticity in antiferromagnetic nickel phosphorus trisulfides (NiPS3) from bulk to atomically thin flakes. We prove that the linear polarization of the excitonic luminescence is perpendicular to the ordered spin orientation in NiPS3. By applying an in-plane magnetic field to alter the spin orientation, we further manipulate the excitonic emission polarization. Such strong correlation between exciton and spins provides new insights for the study of magneto-optics in 2D materials, and hence opens a path for developing opto-spintronic devices and antiferromagnet-based quantum information technologies.
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Submitted 14 June, 2020;
originally announced June 2020.
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Realization of 2D Crystalline Metal Nitrides via Selective Atomic Substitution
Authors:
Jun Cao,
Tianshu Li,
Hongze Gao,
Yuxuan Lin,
Xingzhi Wang,
Haozhe Wang,
Tomás Palacios,
Xi Ling
Abstract:
Two-dimensional (2D) transition metal nitrides (TMNs) are new members in the 2D materials family with a wide range of applications. Particularly, highly crystalline and large area thin films of TMNs are potentially promising for applications in electronic and optoelectronic devices; however, the synthesis of such TMNs has not yet been achieved. Here, we report the synthesis of few-nanometer thin M…
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Two-dimensional (2D) transition metal nitrides (TMNs) are new members in the 2D materials family with a wide range of applications. Particularly, highly crystalline and large area thin films of TMNs are potentially promising for applications in electronic and optoelectronic devices; however, the synthesis of such TMNs has not yet been achieved. Here, we report the synthesis of few-nanometer thin Mo5N6 crystals with large area and high quality via in situ chemical conversion of layered MoS2 crystals. The structure and quality of the ultrathin Mo5N6 crystal are confirmed using transmission electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. The large lateral dimensions of Mo5N6 crystals are inherited from the MoS2 crystals that are used for the conversion. Atomic force microscopy characterization reveals the thickness of Mo5N6 crystals is reduced to about 1/3 of the MoS2 crystal. Electrical measurements show the obtained Mo5N6 samples are metallic with high electrical conductivity (~ 100 Ω sq-1), which is comparable to graphene. The versatility of this general approach is demonstrated by expanding the method to synthesize W5N6 and TiN. Our strategy offers a new direction for preparing 2D TMNs with desirable characteristics, opening a door for studying fundamental physics and facilitating the development of next generation electronics.
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Submitted 3 October, 2019;
originally announced October 2019.
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Mapping micron-scale wetting properties of superhydrophobic surfaces
Authors:
Dan Daniel,
Chee Leng Lay,
Anqi Sng,
Corryl Jing Jun Lee,
Darren Chi Jin Neo,
Xing Yi Ling,
Nikodem Tomczak
Abstract:
There is a huge interest in developing super-repellent surfaces for anti-fouling and heat transfer applications. To characterize the wetting properties of such surfaces, the most common approach is to place a millimetric-sized droplet and measure its contact angles. The adhesion and friction forces can then be indirectly inferred from the Furmidge's relation. While easy to implement, contact angle…
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There is a huge interest in developing super-repellent surfaces for anti-fouling and heat transfer applications. To characterize the wetting properties of such surfaces, the most common approach is to place a millimetric-sized droplet and measure its contact angles. The adhesion and friction forces can then be indirectly inferred from the Furmidge's relation. While easy to implement, contact angle measurements are semi-quantitative and cannot resolve wetting variations on a surface. Here, we attach a micrometric-sized droplet to an Atomic Force Microscope cantilever to directly measure adhesion and friction forces with nanonewton force resolutions. We spatially map the micron-scale wetting properties of superhydrophobic surfaces and observe the time-resolved pinning-depinning dynamics as a droplet detaches from or moves across the surface.
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Submitted 9 September, 2019;
originally announced September 2019.
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Structural Origin of the Two-Step Glass Transition
Authors:
Xinzhuo Liu,
Huaguang Wang,
Zexin Zhang,
Xinsheng Sean Ling
Abstract:
The glass transition is a long-standing problem in physics. Identifying the structural origin of the transition may lead to the ultimate solution to the problem. Here, for the first time, we discover such a structural origin by proposing a novel method to analyze structure-dynamics relation in glasses. An interesting two-step glass transition, with rotational glass transition preceding translation…
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The glass transition is a long-standing problem in physics. Identifying the structural origin of the transition may lead to the ultimate solution to the problem. Here, for the first time, we discover such a structural origin by proposing a novel method to analyze structure-dynamics relation in glasses. An interesting two-step glass transition, with rotational glass transition preceding translational one, is identified experimentally in 2D colloidal rod systems. During the transition, parallel and perpendicularly packed rods are found to form local free energy minima in configurational space, separated by an activation barrier. This barrier increases significantly when rotational glass transition is approached; thereby the rotational motion is frozen while the translational one remains diffusive. We argue that the activation barrier for rotation is the origin of the two-step glass transition. Such an activation barrier between well-defined local configurations holds the key to understand the two-step glass transition in general.
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Submitted 12 February, 2020; v1 submitted 27 August, 2019;
originally announced August 2019.
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Precision Measurement of the Optical Conductivity of Atomically Thin Crystals via Photonic Spin Hall Effect
Authors:
Shizhen Chen,
Xiaohui Ling,
Weixing Shu,
Hailu Luo,
Shuangchun Wen
Abstract:
How to measure the optical conductivity of atomically thin crystals is an important but challenging issue due to the weak light-matter interaction at the atomic scale. Photonic spin Hall effect, as a fundamental physical effect in light-matter interaction, is extremely sensitive to the optical conductivity of atomically thin crystals. Here, we report a precision measurement of the optical conducti…
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How to measure the optical conductivity of atomically thin crystals is an important but challenging issue due to the weak light-matter interaction at the atomic scale. Photonic spin Hall effect, as a fundamental physical effect in light-matter interaction, is extremely sensitive to the optical conductivity of atomically thin crystals. Here, we report a precision measurement of the optical conductivity of graphene, where the photonic spin Hall effect acts as a measurement pointer. By incorporating with the weak-value amplification technique, the optical conductivity of monolayer graphene taken as a universal constant of $(0.993\pm0.005)σ_0$ is detected, and a high measuring resolution with $1.5\times10^{-8}Ω^{-1}$ is obtained. For few-layer graphene without twist, we find that the conductivities increase linearly with layer number. Our idea could provide an important measurement technique for probing other parameters of atomically thin crystals, such as magneto-optical constant, circular dichroism, and optical nonlinear coefficient.
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Submitted 6 August, 2019;
originally announced August 2019.
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Deep-Learning-Enabled Fast Optical Identification and Characterization of Two-Dimensional Materials
Authors:
Bingnan Han,
Yuxuan Lin,
Yafang Yang,
Nannan Mao,
Wenyue Li,
Haozhe Wang,
Kenji Yasuda,
Xirui Wang,
Valla Fatemi,
Lin Zhou,
Joel I-Jan Wang,
Qiong Ma,
Yuan Cao,
Daniel Rodan-Legrain,
Ya-Qing Bie,
Efrén Navarro-Moratalla,
Dahlia Klein,
David MacNeill,
Sanfeng Wu,
Hikari Kitadai,
Xi Ling,
Pablo Jarillo-Herrero,
Jing Kong,
Jihao Yin,
Tomás Palacios
Abstract:
Advanced microscopy and/or spectroscopy tools play indispensable role in nanoscience and nanotechnology research, as it provides rich information about the growth mechanism, chemical compositions, crystallography, and other important physical and chemical properties. However, the interpretation of imaging data heavily relies on the "intuition" of experienced researchers. As a result, many of the d…
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Advanced microscopy and/or spectroscopy tools play indispensable role in nanoscience and nanotechnology research, as it provides rich information about the growth mechanism, chemical compositions, crystallography, and other important physical and chemical properties. However, the interpretation of imaging data heavily relies on the "intuition" of experienced researchers. As a result, many of the deep graphical features obtained through these tools are often unused because of difficulties in processing the data and finding the correlations. Such challenges can be well addressed by deep learning. In this work, we use the optical characterization of two-dimensional (2D) materials as a case study, and demonstrate a neural-network-based algorithm for the material and thickness identification of exfoliated 2D materials with high prediction accuracy and real-time processing capability. Further analysis shows that the trained network can extract deep graphical features such as contrast, color, edges, shapes, segment sizes and their distributions, based on which we develop an ensemble approach topredict the most relevant physical properties of 2D materials. Finally, a transfer learning technique is applied to adapt the pretrained network to other applications such as identifying layer numbers of a new 2D material, or materials produced by a different synthetic approach. Our artificial-intelligence-based material characterization approach is a powerful tool that would speed up the preparation, initial characterization of 2D materials and other nanomaterials and potentially accelerate new material discoveries.
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Submitted 27 January, 2020; v1 submitted 26 June, 2019;
originally announced June 2019.
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Probing plasmon-NV$^0$ coupling at the nanometer scale with photons and fast electrons
Authors:
H. Lourenço-Martins,
M. Kociak,
S. Meuret,
F. Treussart,
Yih Hong Lee,
Xing Yi Ling,
H. C. Chang,
L. H. G. Tizei
Abstract:
The local density of optical states governs an emitters lifetime and quantum yield through the Purcell effect. It can be modified by a surface plasmon electromagnetic field, but such a field has a spatial extension limited to a few hundreds of nanometers, which complicates the use of optical methods to spatially probe the emitter-plasmon coupling. Here we show that a combination of electron-based…
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The local density of optical states governs an emitters lifetime and quantum yield through the Purcell effect. It can be modified by a surface plasmon electromagnetic field, but such a field has a spatial extension limited to a few hundreds of nanometers, which complicates the use of optical methods to spatially probe the emitter-plasmon coupling. Here we show that a combination of electron-based imaging, spectroscopies and photon-based correlation spectroscopy enables measurement of the Purcell effect with nanometer and nanosecond spatio-temporal resolutions. Due to the large variability of radiative lifetimes of emitters embedded in nanoparticles with inhomogeneous sizes we relied on a statistical approach to unambiguously probe the coupling between nitrogen-vacancy centers (NV^0) in nanodiamonds and surface plasmons in silver nanocubes. We quantified the Purcell effect by measuring the NV^0 excited state lifetimes in a large number of either isolated nanodiamonds or nanodiamond-nanocube dimers and demonstrated a statistically significant lifetime reduction for dimers.
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Submitted 2 June, 2019;
originally announced June 2019.
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Coupling-Enhanced Broadband Mid-Infrared Light Absorption in Graphene Plasmonic Nanostructures
Authors:
Bingchen Deng,
Qiushi Guo,
Cheng Li,
Haozhe Wang,
Xi Ling,
Damon B. Farmer,
Shu-jen Han,
Jing Kong,
Fengnian Xia
Abstract:
Plasmons in graphene nanostructures show great promise for mid-infrared applications ranging from a few to tens of microns. However, mid-infrared plasmonic resonances in graphene nanostructures are usually weak and narrow-banded, limiting their potential in light manipulation and detection. Here we investigate the coupling among graphene plasmonic nanostructures and further show that by engineerin…
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Plasmons in graphene nanostructures show great promise for mid-infrared applications ranging from a few to tens of microns. However, mid-infrared plasmonic resonances in graphene nanostructures are usually weak and narrow-banded, limiting their potential in light manipulation and detection. Here we investigate the coupling among graphene plasmonic nanostructures and further show that by engineering the coupling, enhancement of light-graphene interaction strength and broadening of spectral width can be achieved simultaneously. Leveraging the concept of coupling, we demonstrate a hybrid 2-layer graphene nanoribbon array which shows 5 to 7% extinction within the entire 8 to 14 μm (~700 to 1250 cm-1) wavelength range, covering one of the important atmosphere "infrared transmission windows". Such coupled hybrid graphene plasmonic nanostructures may find applications in infrared sensing and free-space communications.
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Submitted 15 December, 2016;
originally announced December 2016.
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Parallel Stitching of Two-Dimensional Materials
Authors:
Xi Ling,
Yuxuan Lin,
Qiong Ma,
Ziqiang Wang,
Yi Song,
Lili Yu,
Shengxi Huang,
Wenjing Fang,
Xu Zhang,
Allen L. Hsu,
Yaqing Bie,
Yi-Hsien Lee,
Yimei Zhu,
Lijun Wu,
Ju Li,
Pablo Jarillo-Herrero,
Mildred S. Dresselhaus,
Tomás Palacios,
Jing Kong
Abstract:
Diverse parallel stitched two-dimensional heterostructures are synthesized, including metal-semiconductor (graphene-MoS2), semiconductor-semiconductor (WS2-MoS2), and insulator-semiconductor (hBN-MoS2), directly through selective sowing of aromatic molecules as the seeds in chemical vapor deposition (CVD) method. Our methodology enables the large-scale fabrication of lateral heterostructures with…
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Diverse parallel stitched two-dimensional heterostructures are synthesized, including metal-semiconductor (graphene-MoS2), semiconductor-semiconductor (WS2-MoS2), and insulator-semiconductor (hBN-MoS2), directly through selective sowing of aromatic molecules as the seeds in chemical vapor deposition (CVD) method. Our methodology enables the large-scale fabrication of lateral heterostructures with arbitrary patterns, and clean and precisely aligned interfaces, which offers tremendous potential for its application in integrated circuits.
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Submitted 14 December, 2015;
originally announced December 2015.
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The Renaissance of Black Phosphorus
Authors:
Xi Ling,
Han Wang,
Shengxi Huang,
Fengnian Xia,
Mildred Dresselhaus
Abstract:
One hundred years after its first successful synthesis in the bulk form in 1914, black phosphorus (black P) was recently rediscovered from the perspective of a two-dimensional (2D) layered material, attracting tremendous interest from condensed matter physicists, chemists, semiconductor device engineers and material scientists. Similar to graphite and transition metal dichalcogenides (TMDs), black…
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One hundred years after its first successful synthesis in the bulk form in 1914, black phosphorus (black P) was recently rediscovered from the perspective of a two-dimensional (2D) layered material, attracting tremendous interest from condensed matter physicists, chemists, semiconductor device engineers and material scientists. Similar to graphite and transition metal dichalcogenides (TMDs), black P has a layered structure but with a unique puckered single layer geometry. Because the direct electronic band gap of thin film black P can be varied from 0.3 to around 2 eV, depending on its film thickness, and because of its high carrier mobility and anisotropic in-plane properties, black P is promising for novel applications in nanoelectronics and nanophotonics different from graphene and TMDs. Black P as a nanomaterial has already attracted much attention from researchers within the past year. Here, we offer our opinions on this emerging material with the goal of motivating and inspiring fellow researchers in the 2D materials community and the broad readership of PNAS to discuss and contribute to this exciting new field. We also give our perspectives on future 2D and thin film black P research directions, aiming to assist researchers coming from a variety of disciplines who are desirous of working in this exciting research field.
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Submitted 28 March, 2015;
originally announced March 2015.
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Observation of Low-frequency Interlayer Breathing Modes in Few-layer Black Phosphorus
Authors:
Xi Ling,
Liangbo Liang,
Shengxi Huang,
Alexander A. Puretzky,
David B. Geohegan,
Bobby G. Sumpter,
Jing Kong,
Vincent Meunier,
Mildred S. Dresselhaus
Abstract:
As a new two-dimensional layered material, black phosphorus (BP) is a promising material for nanoelectronics and nano-optoelectronics. We use Raman spectroscopy and first-principles theory to report our findings related to low-frequency (LF) interlayer breathing modes (<100 cm-1) in few-layer BP for the first time. The breathing modes are assigned to Ag symmetry by the laser polarization dependenc…
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As a new two-dimensional layered material, black phosphorus (BP) is a promising material for nanoelectronics and nano-optoelectronics. We use Raman spectroscopy and first-principles theory to report our findings related to low-frequency (LF) interlayer breathing modes (<100 cm-1) in few-layer BP for the first time. The breathing modes are assigned to Ag symmetry by the laser polarization dependence study and group theory analysis. Compared to the high-frequency (HF) Raman modes, the LF breathing modes are much more sensitive to interlayer coupling and thus their frequencies show much stronger dependence on the number of layers. Hence, they could be used as effective means to probe both the crystalline orientation and thickness for few-layer BP. Furthermore, the temperature dependence study shows that the breathing modes have a harmonic behavior, in contrast to HF Raman modes which are known to exhibit anharmonicity.
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Submitted 26 February, 2015;
originally announced February 2015.
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Broad Band Optical Properties of Large Area Monolayer CVD Molybdenum Disulfide
Authors:
Wei Li,
A. Glen Birdwell,
Matin Amani,
Robert A. Burke,
Xi Ling,
Yi-Hsien Lee,
Xuelei Liang,
Lianmao Peng,
Curt A. Richter,
Jing Kong,
David J. Gundlach,
N. V. Nguyen
Abstract:
Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2 has an intrinsic band gap in the visible which crosses over from an indirect to a direct gap when reduced to a single atomic layer. In this article, we report a…
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Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2 has an intrinsic band gap in the visible which crosses over from an indirect to a direct gap when reduced to a single atomic layer. In this article, we report a comprehensive study of fundamental optical properties of MoS2 revealed by optical spectroscopy of Raman, photoluminescence, and vacuum ultraviolet spectroscopic ellipsometry. A band gap of 1.42 eV is determined by the absorption threshold of bulk MoS2 that shifts to 1.83 eV in monolayer MoS2. We extracted the high precision dielectric function up to 9.0 eV which leads to the identification of many unique interband transitions at high symmetry points in the MoS2 momentum space. The positions of the A and B excitons in single layers are found to shift upwards in energy compared with those of the bulk form and have smaller separation. A very strong optical critical point predicted to correspond to a quasi-particle gap is observed at 2.86 eV, which is attributed to optical transitions along the parallel bands between the M and gama points in the reduced Brillouin zone. The absence of the bulk MoS2 spin-orbit interaction peak at ~ 3.0 eV in monolayer MoS2 is, as predicted, the consequence of the coalescence of nearby excitons. A higher energy optical transition at 3.98 eV, commonly occurred in bulk semiconductors, is associated with a combination of several critical points.These optical transitions herein reported enhance our understanding of monolayer MoS2 as well as of two-dimensional systems in general, and thus provide informative guidelines for MoS2 optical device designs and theoretical considerations.
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Submitted 25 July, 2014;
originally announced July 2014.
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Study of antiferromagnetic and nematic phase transitions in $BaFe_2(As_{1-x}P_x)_2$ by AC micro-calorimetry and SQUID magnetometry
Authors:
Xu Luo,
Valentin Stanev,
Bing Shen,
Lei Fang,
Xinsheng Ling,
Raymond Osborn,
Stephan Rosenkranz,
Wai-Kwong Kwok,
Ulrich Welp
Abstract:
We study the antiferromagnetic (AFM) and structural phase transitions in single crystal $BaFe_2(As_{1-x}P_x)_2$ $(x=0, 0.3)$ at temperatures $T_N$ and $T_S$, respectively, by high resolution ac microcalorimetry and SQUID magnetometry. The specific heat measurements of both as grown and annealed $BaFe_2As_2$ displays a sharp peak at the AFM/Structural transitions. A kink in the entropy of annealed…
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We study the antiferromagnetic (AFM) and structural phase transitions in single crystal $BaFe_2(As_{1-x}P_x)_2$ $(x=0, 0.3)$ at temperatures $T_N$ and $T_S$, respectively, by high resolution ac microcalorimetry and SQUID magnetometry. The specific heat measurements of both as grown and annealed $BaFe_2As_2$ displays a sharp peak at the AFM/Structural transitions. A kink in the entropy of annealed $BaFe_2As_2$ gives evidence for splitting of the two transitions by approximately 0.5K. No additional features could be identified in the specific heat of both $BaFe_2As_2$ and $BaFe_2(As_{0.7}P_{0.3})_2$ in the temperature regions around $T^*$ > $T_S$ where torque measurements [S. Kasahara et al., Nature 486, 382 (2012)] had revealed the "true" nematic phase transition, indicating that the behavior at $T^*$ does not represent a 2nd order phase transition, and that the phase transition of $BaFe_2(As_{1-x}P_x)_2$ into the orthorhombic phase does occur at $T_S$.
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Submitted 23 July, 2014;
originally announced July 2014.
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Trion induced negative photoconductivity in monolayer MoS2
Authors:
C. H. Lui,
A. J. Frenzel,
D. V. Pilon,
Y. -H. Lee,
X. Ling,
G. M. Akselrod,
J. Kong,
N. Gedik
Abstract:
Optical excitation typically enhances electrical conduction and low-frequency radiation absorption in semiconductors. We have, however, observed a pronounced transient decrease of conductivity in doped monolayer molybdenum disulfide (MoS2), a two-dimensional (2D) semiconductor, under femtosecond laser excitation. In particular, the conductivity is reduced dramatically down to only 30% of its equil…
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Optical excitation typically enhances electrical conduction and low-frequency radiation absorption in semiconductors. We have, however, observed a pronounced transient decrease of conductivity in doped monolayer molybdenum disulfide (MoS2), a two-dimensional (2D) semiconductor, under femtosecond laser excitation. In particular, the conductivity is reduced dramatically down to only 30% of its equilibrium value with high pump fluence. This anomalous phenomenon arises from the strong many-body interactions in the system, where photoexcited electron-hole pairs join the doping-induced charges to form trions, bound states of two electrons and one hole. The resultant increase of the carrier effective mass substantially diminishes the carrier conductivity.
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Submitted 19 June, 2014;
originally announced June 2014.
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On the distribution of DNA translocation times in solid-state nanopores: an analysis using Schrodinger's first-passage-time theory
Authors:
Daniel Y. Ling,
X. S. Ling
Abstract:
In this short note, a correction is made to the recently proposed solution [1] to a 1D biased diffusion model for linear DNA translocation and a new analysis will be given to the data in [1]. It was pointed out [2] by us recently that this 1D linear translocation model is equivalent to the one that was considered by Schrodinger [3] for the Enrenhaft-Millikan measurements [4,5] on electron charge.…
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In this short note, a correction is made to the recently proposed solution [1] to a 1D biased diffusion model for linear DNA translocation and a new analysis will be given to the data in [1]. It was pointed out [2] by us recently that this 1D linear translocation model is equivalent to the one that was considered by Schrodinger [3] for the Enrenhaft-Millikan measurements [4,5] on electron charge. Here we apply Schrodinger's first-passage-time distribution formula to the data set in [1]. It is found that Schrodinger's formula can be used to describe the time distribution of DNA translocation in solid-state nanopores. These fittings yield two useful parameters: drift velocity of DNA translocation and diffusion constant of DNA inside the nanopore. The results suggest two regimes of DNA translocation: (I) at low voltages, there are clear deviations from Smoluchowski's linear law of electrophoresis [6] which we attribute to the entropic barrier effects; (II) at high voltages, the translocation velocity is a linear function of the applied electric field. In regime II, the apparent diffusion constant exhibits a quadratic dependence on applied electric field, suggesting a mechanism of Taylor dispersion effect likely due the electro-osmotic flow field in the nanopore channel. This analysis yields a dispersion-free diffusion constant value for the segment of DNA inside the nanopore which is in agreement with Stokes-Einstein theory quantitatively. The implication of Schrodinger's formula for DNA sequencing is discussed.
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Submitted 5 August, 2013; v1 submitted 10 June, 2013;
originally announced June 2013.
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Permeability changes in Boom clay with temperature
Authors:
Pierre Delage,
Nabil Sultan,
Yu-Jun Cui,
Li Xiang Ling
Abstract:
In the framework of research into radioactive waste disposal, this paper presents some tests carried out to investigate the effects of temperature on the changes in permeability of Boom between 20 and 90 deg C. Constant head permeability tests were carried out in a high pressure isotropic compression tests at various temperature and isotropic stresses. The results show that the changes in permeabi…
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In the framework of research into radioactive waste disposal, this paper presents some tests carried out to investigate the effects of temperature on the changes in permeability of Boom between 20 and 90 deg C. Constant head permeability tests were carried out in a high pressure isotropic compression tests at various temperature and isotropic stresses. The results show that the changes in permeability of Boom clay with temperature are only due to the changes in viscosity of free water with temperaure. This demonstrates on the one hand that the water involved in transfer at various temperatures is free water and on the other hand that there is apparently only few changes in the status of adsorbed water with respect to temperature between 20 and 90 deg C.
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Submitted 29 December, 2011;
originally announced December 2011.
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Pheromone Static Routing Strategy for Complex Networks
Authors:
Xiang Ling,
Henry Y. K. Lau,
Rui Jiang,
Mao-Bin Hu
Abstract:
In this paper, we adopt the concept of pheromone to generate a set of static paths that can reach the performance of global dynamic routing strategy [Phys. Rev. E 81, 016113(2010)]. In the test stage, pheromone is dropped to the nodes by packets forwarded by the global dynamic routing strategy. After that, static paths are generated according to the density of pheromone. The output paths can great…
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In this paper, we adopt the concept of pheromone to generate a set of static paths that can reach the performance of global dynamic routing strategy [Phys. Rev. E 81, 016113(2010)]. In the test stage, pheromone is dropped to the nodes by packets forwarded by the global dynamic routing strategy. After that, static paths are generated according to the density of pheromone. The output paths can greatly improve traffic systems' overall capacity on different network structures, including scale-free networks, small-world networks and random graphs. Because the paths are static, the system needs much less computational resource than the global dynamic routing strategy.
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Submitted 30 August, 2011;
originally announced August 2011.
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Optical Tweezers as a Micromechanical Tool for Studying Defects in 2D Colloidal Crystals
Authors:
Sungcheol Kim,
Lichao Yu,
Stephanie Huang,
Alexandros Pertsinidis,
Xinsheng Sean Ling
Abstract:
This paper reports on some new results from the analyses of the video microscopy data obtained in a prior experiment on two-dimensional (2D) colloidal crystals. It was reported previously that optical tweezers can be used to create mono- and di-vacancies in a 2D colloidal crystal. Here we report the results on the creation of a vacancy-interstitial pair, as well as tri-vacancies. It is found that…
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This paper reports on some new results from the analyses of the video microscopy data obtained in a prior experiment on two-dimensional (2D) colloidal crystals. It was reported previously that optical tweezers can be used to create mono- and di-vacancies in a 2D colloidal crystal. Here we report the results on the creation of a vacancy-interstitial pair, as well as tri-vacancies. It is found that the vacancy-interstitial pair can be long-lived, but they do annihilate each other. The behavior of tri-vacancies is most intriguing, as it fluctuates between a configuration of bound pairs of dislocations and that of a locally amorphous state. The relevance of this observation to the issue of the nature of 2D melting is discussed.
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Submitted 9 August, 2011;
originally announced August 2011.
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Direct Evidence for Edge-Contaminated Vortex Phase in a Nb Single Crystal using Neutron Diffraction
Authors:
Helen A. Hanson,
Xi Wang,
Ivo K. Dimitrov,
Jing Shi,
Xinsheng Sean Ling,
Charles F. Majkrzak,
Brian B. Maranville,
Mark Laver,
Uwe Keiderling,
Margarita Russina
Abstract:
We report the first direct observation of a disordered vortex matter phase existing near the edge of a bulk type-II superconductor Nb using a novel position-sensitive neutron diffraction technique. This "edge-contaminated" vortex state was implicated in previous studies using transport techniques and was postulated to have played a significant role in the behavior of vortex dynamics in a wide rang…
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We report the first direct observation of a disordered vortex matter phase existing near the edge of a bulk type-II superconductor Nb using a novel position-sensitive neutron diffraction technique. This "edge-contaminated" vortex state was implicated in previous studies using transport techniques and was postulated to have played a significant role in the behavior of vortex dynamics in a wide range of type-II superconductors. It is found that upon thermal annealing, the vortex matter in the bulk undergoes re-ordering, suggesting that the edge-contaminated bulk vortex state is metastable. The edge vortex state remains disordered after repeated thermal annealing, indicating spatial coexistence of a vortex glass with a Bragg glass. This observation resolves many outstanding issues concerning the peak effect in type-II superconductors.
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Submitted 8 March, 2011; v1 submitted 7 March, 2011;
originally announced March 2011.
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3D Spatially Resolved Neutron Diffraction from a Disordered Vortex Lattice
Authors:
Xi Wang,
Helen A. Hanson,
Xinsheng Sean Ling,
Charles F. Majkrzak,
Brian B. Maranville
Abstract:
The vortex matter in bulk type-II superconductors serves as a prototype system for studying the random pinning problem in condensed matter physics. Since the vortex lattice is embedded in an atomic lattice, small angle neutron scattering (SANS) is the only technique that allows for direct structural studies. In traditional SANS methods, the scattering intensity is a measure of the structure factor…
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The vortex matter in bulk type-II superconductors serves as a prototype system for studying the random pinning problem in condensed matter physics. Since the vortex lattice is embedded in an atomic lattice, small angle neutron scattering (SANS) is the only technique that allows for direct structural studies. In traditional SANS methods, the scattering intensity is a measure of the structure factor averaged over the entire sample. Recent studies in vortex physics have shown that it is highly desirable to develop a SANS technique which is capable of resolving the spatial inhomogeneities in the bulk vortex state. Here we report a novel slicing neutron diffraction technique using atypical collimation and an areal detector which allows for observing the three dimensional (3D) disorder of the vortex matter inside an as-grown Nb single crystal.
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Submitted 28 March, 2011; v1 submitted 23 February, 2011;
originally announced February 2011.
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Magnetocaloric Studies of the Peak Effect in Nb
Authors:
N. D. Daniilidis,
I. K. Dimitrov,
V. F. Mitrovic,
C. Elbaum,
X. S. Ling
Abstract:
We report a magnetocaloric study of the peak effect and Bragg glass transition in a Nb single crystal. The thermomagnetic effects due to vortex flow into and out of the sample are measured. The magnetocaloric signature of the peak effect anomaly is identified. It is found that the peak effect disappears in magnetocaloric measurements at fields significantly higher than those reported in previous…
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We report a magnetocaloric study of the peak effect and Bragg glass transition in a Nb single crystal. The thermomagnetic effects due to vortex flow into and out of the sample are measured. The magnetocaloric signature of the peak effect anomaly is identified. It is found that the peak effect disappears in magnetocaloric measurements at fields significantly higher than those reported in previous ac-susceptometry measurements. Investigation of the superconducting to normal transition reveals that the disappearance of the bulk peak effect is related to inhomogeneity broadening of the superconducting transition. The emerging picture also explains the concurrent disappearance of the peak effect and surface superconductivity, which was reported previously in the sample under investigation. Based on our findings we discuss the possibilities of multicriticality associated with the disappearance of the peak effect.
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Submitted 2 November, 2006;
originally announced November 2006.
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Fate of the Peak Effect in a Type-II Superconductor: Multicriticality in the Bragg-Glass Transition
Authors:
S. R. Park,
S. M. Choi,
D. C. Dender,
J. W. Lynn,
X. S. Ling
Abstract:
We have used small-angle-neutron-scattering (SANS) and ac magnetic susceptibility to investigate the global magnetic field H vs temperature T phase diagram of a single crystal Nb in which a first-order transition of Bragg-glass melting (disordering), a peak effect, and surface superconductivity are all observable. It was found that the disappearance of the peak effect is directly related to a mu…
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We have used small-angle-neutron-scattering (SANS) and ac magnetic susceptibility to investigate the global magnetic field H vs temperature T phase diagram of a single crystal Nb in which a first-order transition of Bragg-glass melting (disordering), a peak effect, and surface superconductivity are all observable. It was found that the disappearance of the peak effect is directly related to a multicritical behavior in the Bragg-glass transition. Four characteristic phase boundary lines have been identified on the H-T plane: a first-order line at high fields, a mean-field-like continuous transition line at low fields, and two continuous transition line associated with the onset of surface and bulk superconductivity. All four lines are found to meet at a multicritical point.
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Submitted 23 October, 2003; v1 submitted 23 May, 2003;
originally announced May 2003.
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Diffusion of Point Defects in Two-Dimensional Colloidal Crystals
Authors:
Alexandros Pertsinidis,
X. S. Ling
Abstract:
We report the first study of the dynamics of point defects, mono and di-vacancies, in a confined 2-D colloidal crystal in real space and time using digital video microscopy. The defects are introduced by manipulating individual particles with optical tweezers. The diffusion rates are measured to be $D_{mono}/a^{2}\cong3.27\pm0.03$Hz for mono-vacancies and $D_{di}/a^{2}\cong3.71\pm0.03$Hz for di-…
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We report the first study of the dynamics of point defects, mono and di-vacancies, in a confined 2-D colloidal crystal in real space and time using digital video microscopy. The defects are introduced by manipulating individual particles with optical tweezers. The diffusion rates are measured to be $D_{mono}/a^{2}\cong3.27\pm0.03$Hz for mono-vacancies and $D_{di}/a^{2}\cong3.71\pm0.03$Hz for di-vacancies. The elementary diffusion processes are identified and it is found that the diffusion of di-vacancies is enhanced by a \textit{dislocation dissociation-recombination} mechanism. Furthermore, the defects do not follow a simple random walk but their hopping exhibits memory effects, due to the reduced symmetry (compared to the triangular lattice) of their stable configurations, and the slow relaxation rates of the lattice modes.
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Submitted 11 March, 2001;
originally announced March 2001.
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Possible Evidence for A Slush Vortex Phase in the Vicinity of Vortex Glass Transition in YBa$_{2}$Cu$_3$O$_{7-δ}$ Thin Films
Authors:
H. H. Wen,
S. L. Li,
G. H. Chen,
X. S. Ling
Abstract:
Current-voltage $I-V$ curves have been carefully measured for YBa$_2$Cu$_3$O$_{7-δ}$ thin films by following different thermal or field annealing procedures. Although all data can be described quite well by the vortex-glass theory, it is found that the dissipation in a small region just above the vortex-glass transition is history dependent: the dissipation in the warming up or field-increasing…
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Current-voltage $I-V$ curves have been carefully measured for YBa$_2$Cu$_3$O$_{7-δ}$ thin films by following different thermal or field annealing procedures. Although all data can be described quite well by the vortex-glass theory, it is found that the dissipation in a small region just above the vortex-glass transition is history dependent: the dissipation in the warming up or field-increasing process is larger than that in the cooling down or field-decreasing process. We attribute this history dependent dissipation to possible existence of a slush vortex phase.
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Submitted 11 January, 2001; v1 submitted 9 January, 2001;
originally announced January 2001.
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Equilibrium Configurations and Energetics of Point Defects in Two-Dimensional Colloidal Crystals
Authors:
Alexandros Pertsinidis,
X. S. Ling
Abstract:
We demonstrate a novel method of introducing point defects (mono and di-vacancies) in a confined mono-layer colloidal crystal by manipulating individual particles with optical tweezers. Digital video microscopy is used to study defect dynamics in real space and time. We analyze the topological arrangements of the particles in the defect core and establish their connection with the energetics of…
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We demonstrate a novel method of introducing point defects (mono and di-vacancies) in a confined mono-layer colloidal crystal by manipulating individual particles with optical tweezers. Digital video microscopy is used to study defect dynamics in real space and time. We analyze the topological arrangements of the particles in the defect core and establish their connection with the energetics of the system. It is found that thermal fluctuations excite point defects into \textit{dislocation multipole} configurations. We extract the dislocation pair potential at near field, where cores overlap and linear elasticity is not applicable.
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Submitted 20 December, 2000; v1 submitted 15 December, 2000;
originally announced December 2000.
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Direct Observation of Superheating and Supercooling of Vortex Matter using Neutron Diffraction
Authors:
X. S. Ling,
S. R. Park,
B. A. McClain,
S. M. Choi,
D. C. Dender,
J. W. Lynn
Abstract:
We report the first observation of a striking history dependence of the structure function of the vortex matter in the peak effect regime in a Nb single crystal by using small angle neutron scattering combined with {\it in situ} magnetic susceptibility measurements. Metastable phases of vortex matter, supercooled vortex liquid and superheated vortex solid, have been identified. We interpret our…
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We report the first observation of a striking history dependence of the structure function of the vortex matter in the peak effect regime in a Nb single crystal by using small angle neutron scattering combined with {\it in situ} magnetic susceptibility measurements. Metastable phases of vortex matter, supercooled vortex liquid and superheated vortex solid, have been identified. We interpret our results as direct structural evidence for a first-order solid-liquid transition at the peak effect.
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Submitted 24 August, 2000;
originally announced August 2000.
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Giant Peak Effect Observed in Ultrapure YBCO Crystal
Authors:
Jing Shi,
X. S. Ling,
Ruixing Liang,
D. A. Bonn,
W. N. Hardy
Abstract:
A giant peak in the temperature dependence of the screening current is observed in the ac magnetic response of an ultra-pure YBa$_2$Cu$_3$O$_{6.993}$ crystal in a magnetic field. At H = 2.0 T ({\bf $H$}$||${\bf c}), the screening current density $J_c(T)$ exhibits a 35-fold rise with 0.5 K increase in temperature, indicating an abrupt $10^3$-fold collapse in the characteristic volume of ordered r…
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A giant peak in the temperature dependence of the screening current is observed in the ac magnetic response of an ultra-pure YBa$_2$Cu$_3$O$_{6.993}$ crystal in a magnetic field. At H = 2.0 T ({\bf $H$}$||${\bf c}), the screening current density $J_c(T)$ exhibits a 35-fold rise with 0.5 K increase in temperature, indicating an abrupt $10^3$-fold collapse in the characteristic volume of ordered regions in the vortex array. The peak-effect anomaly is most pronounced for $H<$ 4.0 T, but detectable up to 7.0 T. The temperature dependence of the equilibrium magnetization exhibits a small discontinuous jump (for high fields) inside the peak-effect regime, suggesting that the underlying phase transition is a weak first-order vortex-lattice melting transition.
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Submitted 1 November, 1999;
originally announced October 1999.
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Equilibrium and Driven Vortex Phases in the Anomalous Peak Effect
Authors:
J. E. Berger,
S. J. Smullin,
W. L. Karlin,
X. S. Ling,
D. E. Prober
Abstract:
We report a crucial experimental test of the present models of the peak effect in weakly disordered type-II superconductors. Our results favor the scenario in which the peak effect arises from a crossover between the Larkin pinning length and a rapidly falling elastic length in a vortex phase populated with thermally excited topological defects. A thickness dependence study of the onset of the p…
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We report a crucial experimental test of the present models of the peak effect in weakly disordered type-II superconductors. Our results favor the scenario in which the peak effect arises from a crossover between the Larkin pinning length and a rapidly falling elastic length in a vortex phase populated with thermally excited topological defects. A thickness dependence study of the onset of the peak effect at varying driving currents suggests that both screw and edge dislocations are involved in the vortex lattice disordering. The driven dynamics in 3D samples are drastically different from those in 2D samples. We suggest that this may be a consequence of the absence of a Peierls potential for screw dislocations in a vortex line lattice.
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Submitted 7 May, 1998;
originally announced May 1998.
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Nature of Phase Transitions of Superconducting Wire Networks in a Magnetic Field
Authors:
X. S. Ling,
M. J. Higgins,
Chao Tang,
P. M. Chaikin,
S. Bhattacharya,
H. J. Lezec,
J. S. Tsai,
J. Fujita,
H. Numata,
Y. Nakamura,
Y. Ochiai
Abstract:
We study $I$-$V$ characteristics of periodic square Nb wire networks as a function of temperature in a transverse magnetic field, with a focus on three fillings 2/5, 1/2, and 0.618 that represent very different levels of incommensurability. For all three fillings, a scaling behavior of $I$-$V$ characteristics is found, suggesting a finite temperature continuous superconducting phase transition.…
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We study $I$-$V$ characteristics of periodic square Nb wire networks as a function of temperature in a transverse magnetic field, with a focus on three fillings 2/5, 1/2, and 0.618 that represent very different levels of incommensurability. For all three fillings, a scaling behavior of $I$-$V$ characteristics is found, suggesting a finite temperature continuous superconducting phase transition. The low-temperature $I$-$V$ characteristics are found to have an exponential form, indicative of the domain-wall excitations.
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Submitted 6 December, 1995;
originally announced December 1995.
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Peak Effect in Superconductors: Melting of Larkin Domains
Authors:
Xinsheng Ling,
Chao Tang,
S. Bhattacharya,
Paul M. Chaikin
Abstract:
Motivated by the recent observations of the peak effect in high-$T_c$ YBCO superconductors, we reexamine the origin of this unusual phenomenon. We show that the mechanism based on the $k$-dependence (nonlocality) of the vortex-lattice tilt modulus $C_{44}({\bf k})$ cannot account for the essential feature of the peak effect. We propose a scenario in which the peak effect is related to the meltin…
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Motivated by the recent observations of the peak effect in high-$T_c$ YBCO superconductors, we reexamine the origin of this unusual phenomenon. We show that the mechanism based on the $k$-dependence (nonlocality) of the vortex-lattice tilt modulus $C_{44}({\bf k})$ cannot account for the essential feature of the peak effect. We propose a scenario in which the peak effect is related to the melting of Larkin domains. In our model, the rise of critical current with increasing temperature is a result of a crossover from the Larkin pinning length to the length scale set by thermally excited free dislocations.
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Submitted 26 April, 1995;
originally announced April 1995.