Showing 1–50 of 84 results for author: Liang, C

Molecule Graph Networks with Many-body Equivariant Interactions

Authors: Zetian Mao, Jiawen Li, Chen Liang, Diptesh Das, Masato Sumita, Koji Tsuda

Abstract: Message passing neural networks have demonstrated significant efficacy in predicting molecular interactions. Introducing equivariant vectorial representations augments expressivity by capturing geometric data symmetries, thereby improving model accuracy. However, two-body bond vectors in opposition may cancel each other out during message passing, leading to the loss of directional information on… ▽ More Message passing neural networks have demonstrated significant efficacy in predicting molecular interactions. Introducing equivariant vectorial representations augments expressivity by capturing geometric data symmetries, thereby improving model accuracy. However, two-body bond vectors in opposition may cancel each other out during message passing, leading to the loss of directional information on their shared node. In this study, we develop Equivariant N-body Interaction Networks (ENINet) that explicitly integrates equivariant many-body interactions to preserve directional information in the message passing scheme. Experiments indicate that integrating many-body equivariant representations enhances prediction accuracy across diverse scalar and tensorial quantum chemical properties. Ablation studies show an average performance improvement of 7.9% across 11 out of 12 properties in QM9, 27.9% in forces in MD17, and 11.3% in polarizabilities (CCSD) in QM7b. △ Less

Submitted 19 June, 2024; originally announced June 2024.

Water Isotope Separation using Deep Learning and a Catalytically Active Ultrathin Membrane

Authors: Jinu Jeong, Chenxing Liang, Narayana Aluru

Abstract: Water isotope separation, specifically separating heavy from light water, is a socially significant issue due to the usage of heavy water in applications such as nuclear magnetic resonance, nuclear power, and spectroscopy. Separation of heavy water from light water is difficult due to very similar physical and chemical properties between the isotopes. We show that a catalytically active ultrathin… ▽ More Water isotope separation, specifically separating heavy from light water, is a socially significant issue due to the usage of heavy water in applications such as nuclear magnetic resonance, nuclear power, and spectroscopy. Separation of heavy water from light water is difficult due to very similar physical and chemical properties between the isotopes. We show that a catalytically active ultrathin membrane (e.g., a nanopore in MoS2) can enable chemical exchange processes and physicochemical mechanisms that lead to efficient separation of deuterium from hydrogen, quantified as the D2O and deuterium separation ratio of 4.5 and 1.73, respectively. The separation process is inherently multiscale in nature with the shorter times representing chemical exchange processes and the longer timescales representing the transport phenomena. To bridge the timescales, we employ a deep learning methodology which uses short time scale ab-initio molecular dynamics data for training and extends the timescales to classical molecular dynamics regime to demonstrate isotope separation and reveal the underlying complex physicochemical processes. △ Less

Submitted 11 March, 2024; originally announced March 2024.

VASP2KP: kp models and Lande g-factors from ab initio calculations

Authors: Sheng Zhang, Haohao Sheng, Zhi-Da Song, Chenhao Liang, Yi Jiang, Song Sun, Quansheng Wu, Hongming Weng, Zhong Fang, Xi Dai, Zhijun Wang

Abstract: The $k\cdot p$ method is significant in condensed matter physics for the compact and analytical Hamiltonian. In the presence of magnetic field, it is described by the effective Zeeman's coupling Hamiltonian with Landé $ g $-factors. Here, we develop an open-source package VASP2KP (including two parts: vasp2mat and mat2kp) to compute $k\cdot p$ parameters and Landé $g$-factors directly from the wav… ▽ More The $k\cdot p$ method is significant in condensed matter physics for the compact and analytical Hamiltonian. In the presence of magnetic field, it is described by the effective Zeeman's coupling Hamiltonian with Landé $ g $-factors. Here, we develop an open-source package VASP2KP (including two parts: vasp2mat and mat2kp) to compute $k\cdot p$ parameters and Landé $g$-factors directly from the wavefunctions provided by the density functional theory (DFT) as implemented in Vienna ab initio Simulation Package (VASP). First, we develop a VASP patch vasp2mat to compute matrix representations of the generalized momentum operator $ \mathbf{\hatπ}=\mathbf{\hat{p}}+\frac{1}{2mc^2}\left(\mathbf{\hat{s}}\times\nabla V(\mathbf{r})\right) $, spin operator $\mathbf{\hat{s}}$, time reversal operator $\hat{T}$ and crystalline symmetry operators $\hat{R}$ on the DFT wavefunctions. Second, we develop a python code mat2kp to obtain the unitary transformation $U$ that rotates the degenerate DFT basis towards the standard basis, and then automatically compute the $k\cdot p$ parameters and $g$-factors. The theory and the methodology behind VASP2KP are described in detail. The matrix elements of the operators are derived comprehensively and computed correctly within the projector augmented wave method. We apply this package to some materials, e.g., Bi$_2$Se$_3$, Na$_3$Bi, Te, InAs and 1H-TMD monolayers. The obtained effective model's dispersions are in good agreement with the DFT data around the specific wave vector, and the $g$-factors are consistent with experimental data. The VASP2KP package is available at https://github.com/zjwang11/VASP2KP. △ Less

Submitted 14 December, 2023; originally announced December 2023.

Journal ref: Chin. Phys. Lett. 40, 127101 (2023)

Tuning Interfacial Water Friction through Moiré Twist

Authors: Chenxing Liang, Narayana R Aluru

Abstract: Nanofluidics is pivotal in fundamental research and diverse applications, from water desalination to energy harvesting and biological analysis. Dynamically manipulating nanofluidic properties, such as diffusion and friction, presents an avenue for advancement in this field. Twisted bilayer graphene, particularly at the magic angle, has garnered attention for its unconventional superconductivity an… ▽ More Nanofluidics is pivotal in fundamental research and diverse applications, from water desalination to energy harvesting and biological analysis. Dynamically manipulating nanofluidic properties, such as diffusion and friction, presents an avenue for advancement in this field. Twisted bilayer graphene, particularly at the magic angle, has garnered attention for its unconventional superconductivity and correlated insulator behavior due to strong electronic correlations. However, the impact of the electronic properties of moiré patterns in twisted bilayer graphene on structural and dynamic properties of water remains largely unexplored. Computational challenges, stemming from simulating large unit cells using density functional theory, have hindered progress. This study addresses this gap by investigating water behavior on twisted bilayer graphene, employing a deep neural network potential (DP) model trained with a dataset from ab initio molecular dynamics simulations. It is found that as the twisted angle approaches the magic angle, interfacial water friction increases, leading to reduced water diffusion. Notably, the analysis shows that at smaller twisted angles with larger moiré patterns, water is more likely to reside in AA stacking regions than AB (or BA) stacking regions, a distinction that diminishes with smaller moiré patterns. This exploration illustrates the potential for leveraging the distinctive properties of twisted bilayer graphene to effectively control and optimize nanofluidic behavior. △ Less

Submitted 11 December, 2023; originally announced December 2023.

A holistic review on fatigue properties of additively manufactured metals

Authors: Min Yi, Wei Tang, Yiqi Zhu, Chenguang Liang, Ziming Tang, Yan Yin, Weiwei He, Shen Sun

Abstract: Additive manufacturing (AM) technology is undergoing rapid development and emerging as an advanced technique that can fabricate complex near-net shaped and light-weight metallic parts with acceptable strength and fatigue performance. A number of studies have indicated that the strength or other mechanical properties of AM metals are comparable or even superior to that of conventionally manufacture… ▽ More Additive manufacturing (AM) technology is undergoing rapid development and emerging as an advanced technique that can fabricate complex near-net shaped and light-weight metallic parts with acceptable strength and fatigue performance. A number of studies have indicated that the strength or other mechanical properties of AM metals are comparable or even superior to that of conventionally manufactured metals, but the fatigue performance is still a thorny problem that may hinder the replacement of currently used metallic components by AM counterparts when the cyclic loading and thus fatigue failure dominates. This article reviews the state-of-art published data on the fatigue properties of AM metals, principally including $S$--$N$ data and fatigue crack growth data. The AM techniques utilized to generate samples in this review include powder bed fusion (e.g., EBM, SLM, DMLS) and directed energy deposition (e.g., LENS, WAAM). Further, the fatigue properties of AM metallic materials that involve titanium alloys, aluminum alloys, stainless steel, nickel-based alloys, magnesium alloys, and high entropy alloys, are systematically overviewed. In addition, summary figures or tables for the published data on fatigue properties are presented for the above metals, the AM techniques, and the influencing factors (manufacturing parameters, e.g., built orientation, processing parameter, and post-processing). The effects of build direction, particle, geometry, manufacturing parameters, post-processing, and heat-treatment on fatigue properties, when available, are provided and discussed. The fatigue performance and main factors affecting the fatigue behavior of AM metals are finally compared and critically analyzed, thus potentially providing valuable guidance for improving the fatigue performance of AM metals. △ Less

Submitted 7 October, 2023; originally announced November 2023.

Comments: 201 pages, 154 figures

Universal wrinkling of freestanding atomically thin films

Authors: Jaehyung Yu, Colin Scheibner, Ce Liang, Thomas A. Witten, Vincenzo Vitelli, Jiwoong Park

Abstract: Atomically thin films, like transition metal dichalcogenides, can now be synthesized at wafer scale, achieving the same extreme aspect ratio (~10^8) that a sheet of paper would have if it covered an entire city. Yet, the intrinsic (i.e. unconfined) three-dimensional shape of these extreme membranes remains a mystery because of the very fundamentals of mechanical measurements: to measure such an ul… ▽ More Atomically thin films, like transition metal dichalcogenides, can now be synthesized at wafer scale, achieving the same extreme aspect ratio (~10^8) that a sheet of paper would have if it covered an entire city. Yet, the intrinsic (i.e. unconfined) three-dimensional shape of these extreme membranes remains a mystery because of the very fundamentals of mechanical measurements: to measure such an ultra-thin film, one first needs to simultaneously free it and stabilize it without introducing confining boundaries. Here, we introduce a counter-intuitive solution to this problem: place atomically thin films on water. Using atomic force microscopy (AFM) and Raman spectroscopy adapted to water's surface, we reveal that large-scale freestanding membranes spontaneously self-wrinkle into a universal mechanical state with long emergent length scales that follow robust scaling trends. Our analytical and numerical models suggest that these universal trends are controlled by mesoscopic parameters of the polycrystalline domains instead of atomistic details. Moreover, we demonstrate experimentally that the wrinkles result in a large and tunable reduction of elastic stiffness by up to 2 orders of magnitude. The present work illuminates the physical properties of the world's thinnest materials at length scales never probed before and highlights their potential for tunable strain-controlled nanomechanical devices. △ Less

Submitted 8 November, 2023; originally announced November 2023.

Comments: Includes main text with 4 figures and supplementary text with 10 supplementary figures

Dissipative time crystal in a strongly interacting Rydberg gas

Authors: Xiaoling Wu, Zhuqing Wang, Fan Yang, Ruochen Gao, Chao Liang, Meng Khoon Tey, Xiangliang Li, Thomas Pohl, Li You

Abstract: The notion of spontaneous symmetry breaking has been well established to characterize classical and quantum phase transitions of matter, such as in condensation, crystallization or quantum magnetism. Generalizations of this paradigm to the time dimension can lead to a time crystal phase, which spontaneously breaks the time translation symmetry of the system. Whereas the existence of a continuous t… ▽ More The notion of spontaneous symmetry breaking has been well established to characterize classical and quantum phase transitions of matter, such as in condensation, crystallization or quantum magnetism. Generalizations of this paradigm to the time dimension can lead to a time crystal phase, which spontaneously breaks the time translation symmetry of the system. Whereas the existence of a continuous time crystal at equilibrium has been challenged by no-go theorems, this difficulty can be circumvented by dissipation in an open system. Here, we report the experimental observation of such dissipative time crystalline order in a room-temperature atomic gas, where ground-state atoms are continuously driven to Rydberg states. The emergent time crystal is revealed by persistent oscillations of the photon transmission, and we show that the observed limit cycles arise from the coexistence and competition between distinct Rydberg components. The nondecaying autocorrelation of the oscillation, together with the robustness against temporal noises, indicate the establishment of true long-range temporal order and demonstrates the realization of a continuous time crystal. △ Less

Submitted 4 July, 2024; v1 submitted 31 May, 2023; originally announced May 2023.

Comments: 14 pages, 4+6 figures

Journal ref: Nat. Phys. (2024)

Doubling of the superconducting transition temperature in ultra-clean wafer-scale aluminum nanofilms

Authors: Ching-Chen Yeh, Thi-Hien Do, Pin-Chi Liao, Chia-Hung Hsu, Yi-Hsin Tu, Hsin Lin, T. -R. Chang, Siang-Chi Wang, Yu-Yao Gao, Yu-Hsun Wu, Chu-Chun Wu, Ivar Martin, Sheng-Di Lin, Christos Panagopoulos, Chi-Te Liang

Abstract: Superconducting properties of thin films can be vastly different from those of bulk materials. Seminal work has shown the critical temperature Tc of elemental superconductors decreases with decreasing film thickness when the normal-state sheet resistance is lower than the quantum resistance h/(4e2). Sporadic examples on disordered films, however, hinted an enhancement in Tc although, structural an… ▽ More Superconducting properties of thin films can be vastly different from those of bulk materials. Seminal work has shown the critical temperature Tc of elemental superconductors decreases with decreasing film thickness when the normal-state sheet resistance is lower than the quantum resistance h/(4e2). Sporadic examples on disordered films, however, hinted an enhancement in Tc although, structural and strain characterization was not possible since samples were prepared on a cold substrate in situ. To clarify the role of reduced dimensionality and disorder on the superconducting properties of thin films we employed molecular beam epitaxy to grow wafer-scale high-quality aluminum (Al) nanofilms with normal-state sheet resistance at least 20 times lower than h/(4e2) and investigated their electronic and structural properties ex situ. Defying general expectations, Tc increases with decreasing Al film thickness, reaching 2.4 K for 3.5-nm-thick Al film grown on GaAs: twice that of bulk Al (1.2 K). DFT calculations indicate surface phonon softening impacts superconductivity in pure ultra-thin films, offering a new route for materials engineering in two dimensions. △ Less

Submitted 10 May, 2023; originally announced May 2023.

Journal ref: Phys. Rev. Mater.7, 114801 (2023)

Variable Electrical Responses in Epitaxial Graphene Nanoribbons

Authors: C. -C. Yeh, S. M. Mhatre, N. T. M. Tran, H. M. Hill, H. Jin, P. -C. Liao, D. K. Patel, R. E. Elmquist, C. -T. Liang, A. F. Rigosi

Abstract: We have demonstrated the fabrication of both armchair and zigzag epitaxial graphene nanoribbon (GNR) devices on 4H-SiC using a polymer-assisted sublimation growth method. The phenomenon of terrace step formation has traditionally introduced the risk of GNR deformation along sidewalls, but a polymer-assisted sublimation method helps mitigate this risk. Each type of 50 nm wide GNR is examined electr… ▽ More We have demonstrated the fabrication of both armchair and zigzag epitaxial graphene nanoribbon (GNR) devices on 4H-SiC using a polymer-assisted sublimation growth method. The phenomenon of terrace step formation has traditionally introduced the risk of GNR deformation along sidewalls, but a polymer-assisted sublimation method helps mitigate this risk. Each type of 50 nm wide GNR is examined electrically and optically (armchair and zigzag), with the latter method being a check on the quality of the GNR devices and the former using alternating current to investigate resistance attenuation from frequencies above 100 Hz. Rates of attenuation are determined for each type of GNR device, revealing subtle suggested differences between armchair and zigzag GNRs. △ Less

Submitted 25 April, 2023; originally announced April 2023.

Observation of fast sound in two-dimensional dusty plasma liquids

Authors: Zhenyu Ge, Dong Huang, Shaoyu Lu, Chen Liang, Matteo Baggioli, Yan Feng

Abstract: Equilibrium molecular dynamics simulations are performed to study two-dimensional (2D) dusty plasma liquids. Based on the stochastic thermal motion of simulated particles, the longitudinal and transverse phonon spectra are calculated, and used to determine the corresponding dispersion relations. From there, the longitudinal and transverse sound speeds of 2D dusty plasma liquids are obtained. It is… ▽ More Equilibrium molecular dynamics simulations are performed to study two-dimensional (2D) dusty plasma liquids. Based on the stochastic thermal motion of simulated particles, the longitudinal and transverse phonon spectra are calculated, and used to determine the corresponding dispersion relations. From there, the longitudinal and transverse sound speeds of 2D dusty plasma liquids are obtained. It is discovered that, for wavenumbers beyond the hydrodynamic regime, the longitudinal sound speed of a 2D dusty plasma liquid exceeds its adiabatic value, i.e., the so-called fast sound. This phenomenon appears at roughly the same length scale of the cutoff wavenumber for transverse waves, confirming its relation to the emergent solidity of liquids in the non-hydrodynamic regime. Using the thermodynamic and transport coefficients extracted from the previous studies, and relying on the Frenkel theory, the ratio of the longitudinal to the adiabatic sound speeds is derived analytically, providing the optimal conditions for fast sound, which are in quantitative agreement with the current simulation results. △ Less

Submitted 29 March, 2023; originally announced March 2023.

Comments: v1: 7 pages, 6 figures

Journal ref: Phys. Rev. E 107, 055211; Published 22 May 2023

Type III superconductivity

Authors: M. C. Diamantini, C. A. Trugenberger, Sheng-Zong Chen, Yu-Jung Lu, Chi-Te Liang, V. M. Vinokur

Abstract: Superconductivity remains one of most fascinating quantum phenomena existing on a macroscopic scale. Its rich phenomenology is usually described by the Ginzburg-Landau (GL) theory in terms of the order parameter, representing the macroscopic wave function of the superconducting condensate. The GL theory addresses one of the prime superconducting properties, screening of the electromagnetic field b… ▽ More Superconductivity remains one of most fascinating quantum phenomena existing on a macroscopic scale. Its rich phenomenology is usually described by the Ginzburg-Landau (GL) theory in terms of the order parameter, representing the macroscopic wave function of the superconducting condensate. The GL theory addresses one of the prime superconducting properties, screening of the electromagnetic field because it becomes massive within a superconductor, the famous Anderson-Higgs mechanism. Here we describe another widely-spread type of superconductivity where the Anderson-Higgs mechanism does not work and must be replaced by the Deser-Jackiw-Templeton topological mass generation and, correspondingly, the GL effective field theory must be replaced by an effective topological gauge theory. These superconductors are inherently inhomogeneous granular superconductors, where electronic granularity is either fundamental or emerging. We show that the corresponding superconducting transition is a three-dimensional (3D) generalization of the 2D Berezinskii-Kosterlitz-Thouless (BKT) vortex binding-unbinding transition. The binding-unbinding of the line-like vortices in 3D results in the Vogel-Fulcher-Tamman (VFT) scaling of the resistance near the superconducting transition. We report experimental data fully confirming the VFT behavior of the resistance. △ Less

Submitted 26 March, 2023; originally announced March 2023.

Journal ref: Advanced Science 2023, 2206523

The Role of Self-Torques in Transition Metal Dichalcogenide/Ferromagnet Bilayers

Authors: Jan Hidding, Klaiv Mërtiri, Fauzia Mujid, Ce Liang, Jiwoong Park, Marcos H. D. Guimarães

Abstract: Recently, transition metal dichalcogenides (TMDs) have been extensively studied for their efficient spin-orbit torque generation in TMD/ferromagnetic bilayers, owing to their large spin-orbit coupling, variety in crystal symmetries, and pristine interfaces. Although the TMD layer was considered essential for the generation of the observed SOTs, recent reports show the presence of a self-torque in… ▽ More Recently, transition metal dichalcogenides (TMDs) have been extensively studied for their efficient spin-orbit torque generation in TMD/ferromagnetic bilayers, owing to their large spin-orbit coupling, variety in crystal symmetries, and pristine interfaces. Although the TMD layer was considered essential for the generation of the observed SOTs, recent reports show the presence of a self-torque in single-layer ferromagnetic devices with magnitudes comparable to TMD/ferromagnetic devices. Here, we perform second-harmonic Hall SOT measurements on metal-organic chemical vapor deposition (MOCVD) grown MoS$_{2}$/permalloy/Al$_{2}$O$_{3}$ devices and compare them to a single-layer permalloy/Al$_{2}$O$_{3}$ device to accurately disentangle the role of self-torques from contributions from the TMD layer. We report a damping-like self-torque conductivity of opposite sign in our single-layer permalloy/Al$_{2}$O$_{3}$ device compared to one MoS$_{2}$/permalloy/Al$_{2}$O$_{3}$ device, and find no significant one for all other MoS$_{2}$/permalloy/Al$_{2}$O$_{3}$ devices. This indicates a competition between the self-torque and the torque arising from the TMD layer, which would reduce the observed torque in these bilayers. In addition, we find a field-like spin-torque conductivity of comparable magnitude to control MoS$_{2}$/permalloy/Al$_{2}$O$_{3}$ devices, indicating only a minor role of the MoS$_{2}$ layer. Finally, we find a linear dependence of the SOT conductivity on the Hall bar leg/channel width ratio of our devices, indicating that the Hall bar dimensions are of significant importance for the reported SOT strength. Our results accentuate the importance of delicate details, like device asymmetry, Hall bar dimensions, and self-torque generation, for the correct disentanglement of the microscopic origins underlying the SOTs, essential for future energy-efficient spintronic applications. △ Less

Submitted 8 March, 2023; v1 submitted 7 March, 2023; originally announced March 2023.

Journal ref: Phys. Rev. B 108, 064419 (2023)

Optical Signatures of Strain Differences in Epitaxial Graphene Nanoribbons

Authors: Heather M. Hill, Ching-Chen Yeh, Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Hanbyul Jin, Adam J. Biacchi, Chi-Te Liang, Angela R. Hight Walker, Albert F. Rigosi

Abstract: We demonstrate the preparation of both armchair and zigzag epitaxial graphene nanoribbons (GNRs) on 4H-SiC using a polymer-assisted, sublimation growth method. Historically, the preparation of GNRs depended on the quality, or smoothness, of the surface changes during growth. The physical phenomenon of terrace step formation introduces the risk of GNR deformation along sidewalls, but the risk is he… ▽ More We demonstrate the preparation of both armchair and zigzag epitaxial graphene nanoribbons (GNRs) on 4H-SiC using a polymer-assisted, sublimation growth method. Historically, the preparation of GNRs depended on the quality, or smoothness, of the surface changes during growth. The physical phenomenon of terrace step formation introduces the risk of GNR deformation along sidewalls, but the risk is heavily mitigated by this polymer-assisted sublimation method. Two widths (100 nm and 50 nm) are examined electrically and optically for both armchair and zigzag GNRs. Our electrical results support the expected behaviors of the GNRs, while the optical signatures of variable strain reveal the subtle differences among all the GNR species measured. △ Less

Submitted 28 February, 2023; originally announced February 2023.

Multi-Task Mixture Density Graph Neural Networks for Predicting Cu-based Single-Atom Alloy Catalysts for CO2 Reduction Reaction

Authors: Chen Liang, Bowen Wang, Shaogang Hao, Guangyong Chen, Pheng-Ann Heng, Xiaolong Zou

Abstract: Graph neural networks (GNNs) have drawn more and more attention from material scientists and demonstrated a high capacity to establish connections between the structure and properties. However, with only unrelaxed structures provided as input, few GNN models can predict the thermodynamic properties of relaxed configurations with an acceptable level of error. In this work, we develop a multi-task (… ▽ More Graph neural networks (GNNs) have drawn more and more attention from material scientists and demonstrated a high capacity to establish connections between the structure and properties. However, with only unrelaxed structures provided as input, few GNN models can predict the thermodynamic properties of relaxed configurations with an acceptable level of error. In this work, we develop a multi-task (MT) architecture based on DimeNet++ and mixture density networks to improve the performance of such task. Taking CO adsorption on Cu-based single-atom alloy catalysts as an illustration, we show that our method can reliably estimate CO adsorption energy with a mean absolute error of 0.087 eV from the initial CO adsorption structures without costly first-principles calculations. Further, compared to other state-of-the-art GNN methods, our model exhibits improved generalization ability when predicting catalytic performance of out-of-domain configurations, built with either unseen substrate surfaces or doping species. We show that the proposed MT GNN strategy can facilitate catalyst discovery. △ Less

Submitted 15 September, 2022; originally announced September 2022.

Comments: 22 pages, 3 figures, 2 tables

Machine Learning 1- and 2-electron reduced density matrices of polymeric molecules

Authors: David Pekker, Chungwen Liang, Sankha Pattanayak, Swagatam Mukhopadhyay

Abstract: Encoding the electronic structure of molecules using 2-electron reduced density matrices (2RDMs) as opposed to many-body wave functions has been a decades-long quest as the 2RDM contains sufficient information to compute the exact molecular energy but requires only polynomial storage. We focus on linear polymers with varying conformations and numbers of monomers and show that we can use machine le… ▽ More Encoding the electronic structure of molecules using 2-electron reduced density matrices (2RDMs) as opposed to many-body wave functions has been a decades-long quest as the 2RDM contains sufficient information to compute the exact molecular energy but requires only polynomial storage. We focus on linear polymers with varying conformations and numbers of monomers and show that we can use machine learning to predict both the 1-electron and the 2-electron reduced density matrices. Moreover, by applying the Hamiltonian operator to the predicted reduced density matrices we show that we can recover the molecular energy. Thus, we demonstrate the feasibility of a machine learning approach to predicting electronic structure that is generalizable both to new conformations as well as new molecules. At the same time our work circumvents the N-representability problem that has stymied the adaption of 2RDM methods, by directly machine-learning valid Reduced Density Matrices. △ Less

Submitted 9 August, 2022; originally announced August 2022.

Comments: 21 pages including supplement

Simulation and detection of Weyl fermions in ultracold Fermi gases with Raman-assisted spin-orbit coupling

Authors: Cheng-Gong Liang, Ze-Gang Liu, Wei Han

Abstract: Weyl fermion, also referred to as pseudo-magnetic monopole in momentum space, is an undiscovered massless elementary particle with half-integer spin predicted according to relativistic quantum field theory. Motivated by the recent experimental observation of Weyl semimetal band in ultracold Bose gases with Raman-assisted 3D spin-orbit coupling, we investigate the properties and possible observatio… ▽ More Weyl fermion, also referred to as pseudo-magnetic monopole in momentum space, is an undiscovered massless elementary particle with half-integer spin predicted according to relativistic quantum field theory. Motivated by the recent experimental observation of Weyl semimetal band in ultracold Bose gases with Raman-assisted 3D spin-orbit coupling, we investigate the properties and possible observation of Weyl fermions in the low-energy quasi-particle excitations of ultracold Fermi gases. Following a previous suggestion that the existing Raman lattice scheme can be readily generalized to fermionic systems, here we discuss the movement of the Weyl points in the Brillouin Zone, as well as the creation and annihilation of Weyl fermions by adjusting the effective Zeeman field. The relevant topological properties are also demonstrated by calculating the Chern number. Furthermore, we propose how to experimentally verify the existence of the Weyl fermions and the associated quantum phase transition via density profile measurements. △ Less

Submitted 27 June, 2022; originally announced June 2022.

Fabrication of uniformly doped graphene quantum Hall arrays with multiple quantized resistance outputs

Authors: Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Heather M. Hill, Ching-Chen Yeh, Dipanjan Saha, David B. Newell, Angela R. Hight Walker, Chi-Te Liang, Randolph E. Elmquist, Albert F. Rigosi

Abstract: In this work, limiting factors for developing metrologically useful arrays from epitaxial graphene on SiC are lifted with a combination of centimeter-scale, high-quality material growth and the implementation of superconducting contacts. Standard devices for metrology have been restricted to having a single quantized value output based on the $ν$ = 2 Landau level. With the demonstrations herein of… ▽ More In this work, limiting factors for developing metrologically useful arrays from epitaxial graphene on SiC are lifted with a combination of centimeter-scale, high-quality material growth and the implementation of superconducting contacts. Standard devices for metrology have been restricted to having a single quantized value output based on the $ν$ = 2 Landau level. With the demonstrations herein of devices having multiple outputs of quantized values available simultaneously, these versatile devices can be used to disseminate the ohm globally. Such devices are designed to give access to quantized resistance values over the range of three orders of magnitude, starting as low as the standard value of approximately 12.9 k$Ω$ and reaching as high as 1.29 M$Ω$. Several experimental methods are used to assess the quality and versatility of the devices, including standard lock-in techniques and Raman spectroscopy. △ Less

Submitted 10 June, 2022; originally announced June 2022.

Lamellar fluctuations melt ferroelectricity

Authors: G. G. Guzmán-Verri, C. H. Liang, P. B. Littlewood

Abstract: We consider a standard Ginzburg-Landau model of a ferroelectric whose electrical polarization is coupled to gradients of elastic strain. At the harmonic level, such flexoelectric interaction is known to hybridize acoustic and optic phonon modes and lead to phases with modulated lattice structures that precede the symmetry broken state for sufficiently large couplings. Here, we use the we use the s… ▽ More We consider a standard Ginzburg-Landau model of a ferroelectric whose electrical polarization is coupled to gradients of elastic strain. At the harmonic level, such flexoelectric interaction is known to hybridize acoustic and optic phonon modes and lead to phases with modulated lattice structures that precede the symmetry broken state for sufficiently large couplings. Here, we use the we use the self-consistent phonon approximation to calculate the effects of thermal and quantum polarization fluctuations on the bare modes to show that such long-range modulated order is unstable at all temperatures. We discuss the implications for the nearly ferroelectric SrTiO$_3$ and KTaO$_3$, and propose that these systems are melted versions of an underlying modulated state which is dominated by non-zero momentum thermal fluctuations except at the very lowest temperatures. △ Less

Submitted 25 April, 2023; v1 submitted 27 May, 2022; originally announced May 2022.

Comments: 17 pages, 3 figures, 1 table, supplementary information included

Journal ref: Phys. Rev. Lett. 131, 046801 (2023)

Spectroscopic assessment of short-term nitric acid doping of epitaxial graphene

Authors: Ngoc Thanh Mai Tran, Swapnil M. Mhatre, Cristiane N. Santos, Adam J. Biacchi, Mathew L. Kelley, Heather M. Hill, Dipanjan Saha, Chi-Te Liang, Randolph E. Elmquist, David B. Newell, Benoit Hackens, Christina A. Hacker, Albert F. Rigosi

Abstract: This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes are monitored by electrical and spectroscopic means to extract the relevant timescales from the corresponding data. It is of vital importance to understand the reversible nature of hole doping because such device proces… ▽ More This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes are monitored by electrical and spectroscopic means to extract the relevant timescales from the corresponding data. It is of vital importance to understand the reversible nature of hole doping because such device processing can be a suitable alternative to large-scale, metallic gating. Most measurements are performed post-exposure at room temperature, and, for some electrical transport measurements, at 1.5 K. Vacuum conditions are applied to many measurements to replicate the laboratory conditions under which devices using this doping method would be measured. The relevant timescales from transport measurements are compared with results from X-ray photoelecton spectroscopy and Fourier transform infrared spectroscopy measurements, with the latter performed at ambient conditions and accompanied by calculations of the spectra in the Reststrahlen band. △ Less

Submitted 15 April, 2022; originally announced April 2022.

Timescales for Nitric Acid Desorption in Epitaxial Graphene Devices

Authors: Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Heather M. Hill, Dipanjan Saha, Angela R. Hight Walker, Chi-Te Liang, Randolph E. Elmquist, David B. Newell, Albert F. Rigosi

Abstract: This work reports the dynamics of transient hole doping in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption processes are extracted from the data. The understanding of reversible hole doping without gating is of crucial importance to those fabricating devices with a particular functionality. Measurements of the electrical and… ▽ More This work reports the dynamics of transient hole doping in epitaxial graphene devices by using nitric acid as an adsorbent. The timescales associated with corresponding desorption processes are extracted from the data. The understanding of reversible hole doping without gating is of crucial importance to those fabricating devices with a particular functionality. Measurements of the electrical and optical properties of several devices post-exposure were performed with transport temperatures between 300 K and 1.5 K. Ambient conditions are applied to non-transport measurements to replicate the most likely laboratory conditions for handling devices using this doping method. The relevant timescales from transport measurements are compared with results from Raman spectroscopy measurements. △ Less

Submitted 15 April, 2022; originally announced April 2022.

Large-scale five- and seven-junction epitaxial graphene devices

Authors: Dinesh Patel, Martina Marzano, Chieh-I Liu, Heather M. Hill, Mattias Kruskopf, Hanbyul Jin, Jiuning Hu, David B. Newell, Chi-Te Liang, Randolph Elmquist, Albert F. Rigosi

Abstract: The utilization of multiple current terminals on millimeter-scale graphene p-n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the i=2 plateau. These fractions take the form a/b R_H and can be determined both analytically and by simulations. These experiments validate the use of either the LTspice circuit simulator or the anal… ▽ More The utilization of multiple current terminals on millimeter-scale graphene p-n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the i=2 plateau. These fractions take the form a/b R_H and can be determined both analytically and by simulations. These experiments validate the use of either the LTspice circuit simulator or the analytical framework recently presented in similar work. Furthermore, the production of several devices with large-scale junctions substantiates the approach of using simple ultraviolet lithography to obtain junctions of sufficient sharpness. △ Less

Submitted 26 March, 2022; v1 submitted 12 March, 2022; originally announced March 2022.

Fabrication of quantum Hall p-n junction checkerboards

Authors: Dinesh K. Patel, Martina Marzano, Chieh-I Liu, Mattias Kruskopf, Randolph E. Elmquist, Chi-Te Liang, Albert F. Rigosi

Abstract: Measurements of fractional multiples of the ν=2 plateau quantized Hall resistance (R_H {\approx} 12906 Ω) were enabled by the utilization of multiple current terminals on millimetre-scale graphene p-n junction devices fabricated with interfaces along both lateral directions. These quantum Hall resistance checkerboard devices have been demonstrated to match quantized resistance outputs numerically… ▽ More Measurements of fractional multiples of the ν=2 plateau quantized Hall resistance (R_H {\approx} 12906 Ω) were enabled by the utilization of multiple current terminals on millimetre-scale graphene p-n junction devices fabricated with interfaces along both lateral directions. These quantum Hall resistance checkerboard devices have been demonstrated to match quantized resistance outputs numerically calculated with the LTspice circuit simulator. From the devices' functionality, more complex embodiments of the quantum Hall resistance checkerboard were simulated to highlight the parameter space within which these devices could operate. Moreover, these measurements suggest that the scalability of p-n junction fabrication on millimetre or centimetre scales is feasible with regards to graphene device manufacturing by using the far more efficient process of standard ultraviolet lithography. △ Less

Submitted 12 March, 2022; originally announced March 2022.

Observation of fractional topological numbers at photonic edges and corners

Authors: Chengpeng Liang, Yang Liu, Fei-Fei Li, Shuwai Leung, Yin Poo, Jian-Hua Jiang

Abstract: Topological phases of matter are featured with exotic edge states. However, the fractional topological numbers at edges, though predicted long ago by Jackiw and Rebbi, remain elusive in topological photonic systems. Here, we report on the observation of fractional topological numbers at the topological edges and corners in one- and two-dimensional photonic crystals. The fractional topological numb… ▽ More Topological phases of matter are featured with exotic edge states. However, the fractional topological numbers at edges, though predicted long ago by Jackiw and Rebbi, remain elusive in topological photonic systems. Here, we report on the observation of fractional topological numbers at the topological edges and corners in one- and two-dimensional photonic crystals. The fractional topological numbers are determined via the measurements of the photonic local density-of-states. In one-dimensional photonic crystals, we witness a rapid change of the fractional topological number at the edges rising from 0 to 1/2 when the photonic band gap experiences a topological transition, confirming the well-known prediction of Jackiw and Rebbi. In two-dimensional systems, we discover that the fractional topological number in the corner region varies from 0 to 1/2 and 1/4 in different photonic band gap phases. Our study paves the way toward topological manipulation of fractional quantum numbers in photonics. △ Less

Submitted 21 November, 2022; v1 submitted 28 February, 2022; originally announced March 2022.

Comments: All comments are welcome

Dynamic crystallography reveals spontaneous anisotropy in cubic GeTe

Authors: Simon A. J. Kimber, Jiayong Zhang, Charles H. Liang, Gian G. Guzman-Verri, Peter B. Littlewood, Yongqiang Cheng, Douglas L. Abernathy, Jessica M. Hudspeth, Zhong-Zhen Luo, Mercouri G. Kanatzidis, Tapan Chatterji, Anibal J. Ramirez-Cuesta, Simon J. L. Billinge

Abstract: Cubic energy materials such as thermoelectrics or hybrid perovskite materials are often understood to be highly disordered. In GeTe and related IV-VI compounds, this is thought to provide the low thermal conductivities needed for thermoelectric applications. Since conventional crystallography cannot distinguish between static disorder and atomic motions, we develop the energy-resolved variable-shu… ▽ More Cubic energy materials such as thermoelectrics or hybrid perovskite materials are often understood to be highly disordered. In GeTe and related IV-VI compounds, this is thought to provide the low thermal conductivities needed for thermoelectric applications. Since conventional crystallography cannot distinguish between static disorder and atomic motions, we develop the energy-resolved variable-shutter pair distribution function technique. This collects structural snapshots with varying exposure times, on timescales relevant for atomic motions. In disagreement with previous interpretations, we find the time-averaged structure of GeTe to be crystalline at all temperatures, but with anisotropic anharmonic dynamics at higher temperatures that resemble static disorder at fast shutter speeds, with correlated ferroelectric fluctuations along the $<$100$>$c direction. We show that this anisotropy naturally emerges from a Ginzburg-Landau model that couples polarization fluctuations through long-range elastic interactions. By accessing time-dependent atomic correlations in energy materials, we resolve the long-standing disagreement between local and average structure probes, and show that spontaneous anisotropy is ubiquitous in cubic IV-VI materials. △ Less

Submitted 25 May, 2023; v1 submitted 11 February, 2022; originally announced February 2022.

Comments: Published version, substantial changes, many references removed due to journal limits :-( Please see the supporting information online. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format (see conditions)

Journal ref: Nature Materials, 22, 311-315 (2023)

Nonconventional Quantized Hall Resistances Obtained with $ν= 2$ Equilibration in Epitaxial Graphene $p-n$ Junctions

Authors: Albert F. Rigosi, Dinesh Patel, Martina Marzano, Mattias Kruskopf, Heather M. Hill, Hanbyul Jin, Jiuning Hu, Angela R. Hight Walker, Massimo Ortolano, Luca Callegaro, Chi-Te Liang, David B. Newell

Abstract: We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene $p-n$ junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantize… ▽ More We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene $p-n$ junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantized Hall resistance at $ν=2$ ($R_H\approx 12906 Ω$) that take the form: $\frac{a}{b}R_H$. Here, $a$ and $b$ have been observed to take on values such 1, 2, 3, and 5 to form various coefficients of $R_H$. Additionally, we provide a framework for exploring future device configurations using the LTspice circuit simulator as a guide to understand the abundance of available fractions one may be able to measure. These results support the potential for drastically simplifying device processing time and may be used for many other two-dimensional materials. △ Less

Submitted 24 January, 2022; originally announced January 2022.

Deformed Symmetry Structures and Quantum Many-body Scar Subspaces

Authors: Jie Ren, Chenguang Liang, Chen Fang

Abstract: A quantum many-body scar system usually contains a special non-thermal subspace (approximately) decoupled from the rest of the Hilbert space. In this work, we propose a general structure called deformed symmetric spaces for the decoupled subspaces hosting quantum many-body scars, which are irreducible sectors of simple Lie groups transformed by matrix-product operators (or projected entangled pair… ▽ More A quantum many-body scar system usually contains a special non-thermal subspace (approximately) decoupled from the rest of the Hilbert space. In this work, we propose a general structure called deformed symmetric spaces for the decoupled subspaces hosting quantum many-body scars, which are irreducible sectors of simple Lie groups transformed by matrix-product operators (or projected entangled pair operators), of which the entanglement entropies are proved to obey sub-volume-law scaling and thus violate the eigenstate thermalization hypothesis. A deformed symmetric space, in general, is required to have at least a U(1) sub-Lie-group symmetry to allow coherent periodic dynamics from certain low-entangled initial states. We enumerate several possible deforming transformations based on the sub-group symmetry requirement and recover many existing models whose scar states are not connected by symmetry. In particular, a two-dimensional scar model is proposed, which hosts a periodic dynamical trajectory on which all states are topologically ordered. △ Less

Submitted 29 November, 2021; v1 submitted 17 August, 2021; originally announced August 2021.

Comments: 30 pages, 7 figures, improved presentation, updated reference

Journal ref: Phys. Rev. Research 4, 013155 (2022)

Electric-field-tunable intervalley excitons and phonon replicas in bilayer WSe$_2$

Authors: Mashael M. Altaiary, Erfu Liu, Ching-Tarng Liang, Fu-Chen Hsiao, Jeremiah van Baren, Takashi Taniguchi, Kenji Watanabe, Nathaniel M. Gabor, Yia-Chung Chang, Chun Hung Lui

Abstract: We report the direct observation of intervalley exciton between the Q conduction valley and $Γ$ valence valley in bilayer WSe$_2$ by photoluminescence. The Q$Γ$ exciton lies at ~18 meV below the QK exciton and dominates the luminescence of bilayer WSe$_2$. By measuring the exciton spectra at gate-tunable electric field, we reveal different interlayer electric dipole moments and Stark shifts betwee… ▽ More We report the direct observation of intervalley exciton between the Q conduction valley and $Γ$ valence valley in bilayer WSe$_2$ by photoluminescence. The Q$Γ$ exciton lies at ~18 meV below the QK exciton and dominates the luminescence of bilayer WSe$_2$. By measuring the exciton spectra at gate-tunable electric field, we reveal different interlayer electric dipole moments and Stark shifts between Q$Γ$ and QK excitons. Notably, we can use the electric field to switch the energy order and dominant luminescence between Q$Γ$ and QK excitons. Both Q$Γ$ and QK excitons exhibit pronounced phonon replicas, in which two-phonon replicas outshine the one-phonon replicas due to the existence of (nearly) resonant exciton-phonon scatterings and numerous two-phonon scattering paths. We can simulate the replica spectra by comprehensive theoretical modeling and calculations. The good agreement between theory and experiment for the Stark shifts and phonon replicas strongly supports our assignment of Q$Γ$ and QK excitons. △ Less

Submitted 26 January, 2021; originally announced January 2021.

Quasi-symmetry groups and many-body scar dynamics

Authors: Jie Ren, Chenguang Liang, Chen Fang

Abstract: In quantum systems, a subspace spanned by degenerate eigenvectors of the Hamiltonian may have higher symmetries than those of the Hamiltonian itself. When this enhanced-symmetry group can be generated from local operators, we call it a quasi-symmetry group. When the group is a Lie group, an external field coupled to certain generators of the quasi-symmetry group lifts the degeneracy, and results i… ▽ More In quantum systems, a subspace spanned by degenerate eigenvectors of the Hamiltonian may have higher symmetries than those of the Hamiltonian itself. When this enhanced-symmetry group can be generated from local operators, we call it a quasi-symmetry group. When the group is a Lie group, an external field coupled to certain generators of the quasi-symmetry group lifts the degeneracy, and results in exactly periodic dynamics within the degenerate subspace, namely the many-body-scar dynamics (given that Hamiltonian is non-integrable). We provide two related schemes for constructing one-dimensional spin models having on-demand quasi-symmetry groups, with exact periodic evolution of a pre-chosen product or matrix-product state under certain external fields. △ Less

Submitted 26 February, 2021; v1 submitted 20 July, 2020; originally announced July 2020.

Comments: 23 pages, 9 figures, accepted version

Journal ref: Phys. Rev. Lett. 126, 120604 (2021)

Can experiment determine the stacking fault energy of metastable alloys?

Authors: Xun Suna, Song Lu, Ruiwen Xie, Xianghai An, Wei Li, Tianlong Zhang, Chuanxin Liang, Xiangdong Ding, Yunzhi Wang, Hualei Zhang, Levente Vitos

Abstract: Stacking fault energy (SFE) plays an important role in deformation mechanisms and mechanical properties of face-centered cubic (fcc) metals and alloys. In metastable fcc alloys, the SFEs determined from density functional theory (DFT) calculations and experimental methods often have opposite signs. Here, we show that the negative SFE by DFT reflects the thermodynamic instability of the fcc phase r… ▽ More Stacking fault energy (SFE) plays an important role in deformation mechanisms and mechanical properties of face-centered cubic (fcc) metals and alloys. In metastable fcc alloys, the SFEs determined from density functional theory (DFT) calculations and experimental methods often have opposite signs. Here, we show that the negative SFE by DFT reflects the thermodynamic instability of the fcc phase relative to the hexagonal close-packed one; while the experimentally determined SFEs are restricted to be positive by the models behind the indirect measurements. We argue that the common models underlying the experimental measurements of SFE fail in metastable alloys. In various concentrated solid solutions, we demonstrate that the SFEs obtained by DFT calculations correlate well with the primary deformation mechanisms observed experimentally, showing a better resolution than the experimentally measured SFEs. Furthermore, we believe that the negative SFE is important for understanding the abnormal behaviors of partial dislocations in metastable alloys under deformation. The present work advances the fundamental understanding of SFE and its relation to plastic deformations, and sheds light on future alloy design by physical metallurgy. △ Less

Submitted 20 May, 2020; originally announced May 2020.

Multipath optical recombination of intervalley dark excitons and trions in monolayer WSe$_2$

Authors: Erfu Liu, Jeremiah van Baren, Ching-Tarng Liang, Takashi Taniguchi, Kenji Watanabe, Nathaniel M. Gabor, Yia-Chung Chang, Chun Hung Lui

Abstract: Excitons and trions (or exciton-polarons) in transition metal dichalcogenides (TMDs) are known to decay predominantly through intravalley transitions. Electron-hole recombination across different valleys can also play a significant role in the excitonic dynamics, but intervalley transitions are rarely observed in monolayer TMDs, because they violate the conservation of momentum. Here we reveal the… ▽ More Excitons and trions (or exciton-polarons) in transition metal dichalcogenides (TMDs) are known to decay predominantly through intravalley transitions. Electron-hole recombination across different valleys can also play a significant role in the excitonic dynamics, but intervalley transitions are rarely observed in monolayer TMDs, because they violate the conservation of momentum. Here we reveal the intervalley recombination of dark excitons and trions through more than one path in monolayer WSe$_2$. We observe the intervalley dark excitons, which can recombine by the assistance of defect scattering or chiral-phonon emission. We also reveal that a trion can decay in two distinct paths - through intravalley or intervalley electron-hole recombination - into two different final valley states. Although these two paths are energy degenerate, we can distinguish them by lifting the valley degeneracy under a magnetic field. In addition, the intra- and inter-valley trion transitions are coupled to zone-center and zone-corner chiral phonons, respectively, to produce distinct phonon replicas. The observed multipath optical decays of dark excitons and trions provide much insight into the internal quantum structure of trions and the complex excitonic interactions with defects and chiral phonons in monolayer valley semiconductors. △ Less

Submitted 10 May, 2020; originally announced May 2020.

Journal ref: Phys. Rev. Lett. 124, 196802 (2020)

Dynamics of a membrane coupled to an active fluid

Authors: Chia-Chun Liang, Kento Yasuda, Shigeyuki Komura, Kuo-An Wu, Hsuan-Yi Chen

Abstract: The dynamics of a membrane coupled to an active fluid on top of a substrate is considered theoretically. It is assumed that the director field of the active fluid has rotational symmetry in the membrane plane. This situation is likely to be relevant for in vitro reconstructed actomyosin-membrane system. Different from a membrane coupled to a polar active fluid, this model predicts that only when t… ▽ More The dynamics of a membrane coupled to an active fluid on top of a substrate is considered theoretically. It is assumed that the director field of the active fluid has rotational symmetry in the membrane plane. This situation is likely to be relevant for in vitro reconstructed actomyosin-membrane system. Different from a membrane coupled to a polar active fluid, this model predicts that only when the viscosity of the fluid above the membrane is sufficiently large, a contractile active fluid is able to slow down the relaxation of the membrane for perturbations with wavelength comparable to the thickness of the active fluid. Hence our model predicts a finite-wavelength instability in the limit of strong contractility, which is different from a membrane coupled to a polar active fluid. On the other hand, a membrane coupled to an extensile active fluid is always unstable against long wavelength perturbations due to splay induced flows. △ Less

Submitted 13 March, 2020; v1 submitted 11 December, 2019; originally announced December 2019.

Comments: accepted by Phys Rev E

Journal ref: Phys. Rev. E 101, 042601 (2020)

High-performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying-barrier-type Indium Electrodes

Authors: Yu-Ting Huang, Yi-Hsun Chen, Yi-Ju Ho, Shih-Wei Huang, Yih-Ren Chang, Kenji Watanabe, Takashi Taniguchi, Hsiang-Chih Chiu, Chi-Te Liang, Raman Sankar, Fang-Cheng Chou, Chun-Wei Chen, Wei-Hua Wang

Abstract: The electrical contact to two-dimensional (2D)-semiconductor materials are decisive to the electronic performance of 2D-semiconductor field-effect devices (FEDs). The presence of a Schottky barrier often leads to a large contact resistance, which seriously limits the channel conductance and carrier mobility measured in a two-terminal geometry. In contrast, ohmic contact is desirable and can be ach… ▽ More The electrical contact to two-dimensional (2D)-semiconductor materials are decisive to the electronic performance of 2D-semiconductor field-effect devices (FEDs). The presence of a Schottky barrier often leads to a large contact resistance, which seriously limits the channel conductance and carrier mobility measured in a two-terminal geometry. In contrast, ohmic contact is desirable and can be achieved by the presence of a nonrectifying or tunneling barrier. Here, we demonstrate that an nonrectifying barrier can be realized by contacting indium (In), a low work function metal, with layered InSe because of a favorable band alignment at the In-InSe interface. The nonrectifying barrier is manifested by ohmic contact behavior at T=2 K and a low barrier height, Φ$_B$=50 meV. This ohmic contact enables demonstration of an ON-current as large as 410 μA/μm, which is among the highest values achieved in FEDs based on layered semiconductors. A high electron mobility of 3,700 and 1,000 cm$^2$/Vs is achieved with the two-terminal In-InSe FEDs at T=2 K and room temperature, respectively, which can be attributed to enhanced quality of both conduction channel and the contacts. The improvement in the contact quality is further proven by an X-ray photoelectron spectroscopy study, which suggests that a reduction effect occurs at the In-InSe interface. The demonstration of high-performance In-InSe FEDs indicates a viable interface engineering method for next-generation, 2D-semiconductor-based electronics. △ Less

Submitted 10 September, 2018; originally announced September 2018.

Anomalous isothermal compressibility in spin-orbit coupled degenerate Fermi gases

Authors: Cheng-Gong Liang, Yue-Xin Huang, Fei-Hong Liu, Yunbo Zhang, Guang-Can Guo, Ming Gong

Abstract: The spin-orbit coupling (SOC) in degenerate Fermi gases can fundamentally change the fate of $s$-wave superfluids with strong Zeeman field and give rise to topological superfluids and associated Majorana zero modes. It also dramatically changes the thermodynamic properties of the superfluids. Here we report the anomalous isothermal compressibility $κ_T$ in this superfluids with both SOC and Zeeman… ▽ More The spin-orbit coupling (SOC) in degenerate Fermi gases can fundamentally change the fate of $s$-wave superfluids with strong Zeeman field and give rise to topological superfluids and associated Majorana zero modes. It also dramatically changes the thermodynamic properties of the superfluids. Here we report the anomalous isothermal compressibility $κ_T$ in this superfluids with both SOC and Zeeman field. We formulate this quantity from the Gibbs-Duhem equation and show that the contribution of $κ_T$ comes from the explicit contribution of chemical potential and implicit contribution of order parameter. In the Bardeen-Cooper-Schrieffer (BCS) limit, this compressibility is determined by the density of state near the Fermi surface; while in the Bose Einstein condensate (BEC) regime it is determined by the scattering length. Between these two limits, we find that the anomalous peaks can only be found in the gapless Weyl phase regime. This anomalous behavior can be regarded as a remanent effect of phase separation. The similar physics can also be found in the lattice model away from half filling. These predictions can be measured from the anomalous response of sound velocity and fluctuation of carrier density. △ Less

Submitted 8 September, 2018; originally announced September 2018.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. A 102, 013327 (2020)

Effective bond-orbital model of III-nitride wurtzite structures based on modified interaction parameters of zinc-blende structures

Authors: Fu-Chen Hsiao, Ching-Tarng Liang, Yia-Chung Chang, John M. Dallesasse

Abstract: A simple theoretical method for deducing the effective bond-orbital model (EBOM) of III-nitride wurtzite (WZ) semiconductors is presented. In this model, the interaction parameters for zinc-blende (ZB) structures are used as an initial guess for WZ structure based on the two-center approximation. The electronic band structure of III-nitride WZ semiconductors can hence be produced by utilizing this… ▽ More A simple theoretical method for deducing the effective bond-orbital model (EBOM) of III-nitride wurtzite (WZ) semiconductors is presented. In this model, the interaction parameters for zinc-blende (ZB) structures are used as an initial guess for WZ structure based on the two-center approximation. The electronic band structure of III-nitride WZ semiconductors can hence be produced by utilizing this set of parameters modified to include effects due to three-center integrals and fitting with first-principles calculations. Details of the semi-empirical fitting procedure for constructing the EBOM Hamiltonian for bulk III-nitride WZ semiconductors are presented. The electronic band structure of bulk AlN, GaN, and InN with WZ structure calculated by EBOM with modified interaction parameters are shown and compared to the results obtained from density functional (DFT) theory with meta-generalized gradient approximation (mGGA). The set of parameters are further optimized by using a genetic algorithm. In the end, electronic band structures and electron (hole) effective masses near the zone center calculated by the proposed model with best fitting parameters are analyzed and compared with the $\mathbf{k}\cdot \mathbf{p}$ model. △ Less

Submitted 3 November, 2019; v1 submitted 7 July, 2018; originally announced July 2018.

Total Ionizing Dose Effects on Threshold Switching in 1T-Tantalum Disulfide Charge-Density-Wave Devices

Authors: G. Liu, E. X. Zhang, C. D. Liang, M. A. Bloodgood, T. T. Salguero, D. M. Fleetwood, A. A. Balandin

Abstract: The 1T polytype of TaS2 exhibits voltage-triggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be utilized in a variety of electronic devices, e.g., voltage controlled oscillators. We evaluated the total-ionizing-dose response of thin film 1T-TaS2 at doses up… ▽ More The 1T polytype of TaS2 exhibits voltage-triggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be utilized in a variety of electronic devices, e.g., voltage controlled oscillators. We evaluated the total-ionizing-dose response of thin film 1T-TaS2 at doses up to 1 Mrad(SiO2). The threshold voltage changed by less than 2% after irradiation, with persistent self-sustained oscillations observed through the full irradiation sequence. The radiation hardness is attributed to the high intrinsic carrier concentration of 1T-TaS2 in both of the phases that lead to threshold switching. These results suggest that charge density wave devices, implemented with thin films of 1T-TaS2, are promising for applications in high radiation environments. △ Less

Submitted 18 October, 2017; originally announced December 2017.

Comments: 4 pages; 4 figures

Journal ref: EEE Electron Device Letters, 38, 1724 (2017)

Solvent Fluctuations and Nuclear Quantum Effects Modulate the Molecular Hyperpolarizability of Water

Authors: Chungwen Liang, Gabriele Tocci, David Wilkins, Andrea Grisafi, Sylvie Roke, Michele Ceriotti

Abstract: Second-Harmonic Scatteringh (SHS) experiments provide a unique approach to probe non-centrosymmetric environments in aqueous media, from bulk solutions to interfaces, living cells and tissue. A central assumption made in analyzing SHS experiments is that the each molecule scatters light according to a constant molecular hyperpolarizability tensor $\boldsymbolβ^{(2)}$. Here, we investigate the depe… ▽ More Second-Harmonic Scatteringh (SHS) experiments provide a unique approach to probe non-centrosymmetric environments in aqueous media, from bulk solutions to interfaces, living cells and tissue. A central assumption made in analyzing SHS experiments is that the each molecule scatters light according to a constant molecular hyperpolarizability tensor $\boldsymbolβ^{(2)}$. Here, we investigate the dependence of the molecular hyperpolarizability of water on its environment and internal geometric distortions, in order to test the hypothesis of constant $\boldsymbolβ^{(2)}$. We use quantum chemistry calculations of the hyperpolarizability of a molecule embedded in point-charge environments obtained from simulations of bulk water. We demonstrate that both the heterogeneity of the solvent configurations and the quantum mechanical fluctuations of the molecular geometry introduce large variations in the non-linear optical response of water. This finding has the potential to change the way SHS experiments are interpreted: in particular, isotopic differences between H$_2$O and D$_2$O could explain recent second-harmonic scattering observations. Finally, we show that a simple machine-learning framework can predict accurately the fluctuations of the molecular hyperpolarizability. This model accounts for the microscopic inhomogeneity of the solvent and represents a first step towards quantitative modelling of SHS experiments. △ Less

Submitted 3 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. B 96, 041407 (2017)

Second-Harmonic Scattering as a Probe of Structural Correlations in Liquids

Authors: Gabriele Tocci, Chungwen Liang, David M. Wilkins, Sylvie Roke, Michele Ceriotti

Abstract: Second-harmonic scattering experiments of water and other bulk molecular liquids have long been assumed to be insensitive to interactions between the molecules. The measured intensity is generally thought to arise from incoherent scattering due to individual molecules. We introduce a method to compute the second-harmonic scattering pattern of molecular liquids directly from atomistic computer simu… ▽ More Second-harmonic scattering experiments of water and other bulk molecular liquids have long been assumed to be insensitive to interactions between the molecules. The measured intensity is generally thought to arise from incoherent scattering due to individual molecules. We introduce a method to compute the second-harmonic scattering pattern of molecular liquids directly from atomistic computer simulations, which takes into account the coherent terms. We apply this approach to large-scale molecular dynamics simulations of liquid water, where we show that nanosecond second-harmonic scattering experiments contain a coherent contribution arising from radial and angular correlations on a length scale of < 1 nm, much shorter than had been recently hypothesized (Shelton, D. P. J. Chem. Phys. 2014, 141). By combining structural correlations from simulations with experimental data (Shelton, D. P. J. Chem. Phys. 2014, 141), we can also extract an effective molecular hyperpolarizability in the liquid phase. This work demonstrates that second-harmonic scattering experiments and atomistic simulations can be used in synergy to investigate the structure of complex liquids, solutions, and biomembranes, including the intrinsic intermolecular correlations. △ Less

Submitted 10 November, 2016; originally announced November 2016.

Journal ref: Journal of Physical Chemistry Letters 7 (21), 4311-4316 (2016)

Magnetic microscopy and simulation of strain-mediated control of magnetization in Ni/PMN-PT nanostructures

Authors: Ian Gilbert, Andres C. Chavez, Daniel T. Pierce, John Unguris, Wei-Yang Sun, Cheng-Yen Liang, Gregory P. Carman

Abstract: Strain-mediated thin film multiferroics comprising piezoelectric/ferromagnetic heterostructures enable the electrical manipulation of magnetization with much greater efficiency than other methods; however, the investigation of nanostructures fabricated from these materials is limited. Here we characterize ferromagnetic Ni nanostructures grown on a ferroelectric PMN-PT substrate using scanning elec… ▽ More Strain-mediated thin film multiferroics comprising piezoelectric/ferromagnetic heterostructures enable the electrical manipulation of magnetization with much greater efficiency than other methods; however, the investigation of nanostructures fabricated from these materials is limited. Here we characterize ferromagnetic Ni nanostructures grown on a ferroelectric PMN-PT substrate using scanning electron microscopy with polarization analysis (SEMPA) and micromagnetic simulations. The magnetization of the Ni nanostructures can be controlled with a combination of sample geometry and applied electric field, which strains the ferroelectric substrate and changes the magnetization via magnetoelastic coupling. We evaluate two types of simulations of ferromagnetic nanostructures on strained ferroelectric substrates: conventional micromagnetic simulations including a simple uniaxial strain, and coupled micromagnetic-elastodynamic simulations. Both simulations qualitatively capture the response of the magnetization changes produced by the applied strain, with the coupled solution providing more accurate representation. △ Less

Submitted 3 October, 2016; originally announced October 2016.

Comments: 10 pages, 4 figures

Robust fractional quantum Hall effect and composite fermions in the $N=2$ Landau level in bilayer graphene

Authors: Georgi Diankov, Chi-Te Liang, Francois Amet, Patrick Gallagher, Menyoung Lee, Andrew J. Bestwick, Kevin Tharratt, William Coniglio, Jan Jaroszynski, K. Watanabe, T. Taniguchi, David Goldhaber-Gordon

Abstract: The fractional quantum Hall (FQH) effect is a canonical example of electron-electron interactions producing new ground states in many-body systems. Most FQH studies have focused on the lowest Landau level (LL), whose fractional states are successfully explained by the composite fermion (CF) model, in which an even number of magnetic flux quanta are attached to an electron and where states form the… ▽ More The fractional quantum Hall (FQH) effect is a canonical example of electron-electron interactions producing new ground states in many-body systems. Most FQH studies have focused on the lowest Landau level (LL), whose fractional states are successfully explained by the composite fermion (CF) model, in which an even number of magnetic flux quanta are attached to an electron and where states form the sequence of filling factors $ν= p/(2mp \pm 1)$, with $m$ and $p$ positive integers. In the widely-studied GaAs-based system, the CF picture is thought to become unstable for the $N \geq 2$ LL, where larger residual interactions between CFs are predicted and competing many-body phases have been observed. Here we report transport measurements of FQH states in the $N=2$ LL (filling factors $4 < ν< 8$) in bilayer graphene, a system with spin and valley degrees of freedom in all LLs, and an additional orbital degeneracy in the 8-fold degenerate $N=0$/$N=1$ LLs. In contrast with recent observations of particle-hole asymmetry in the $N=0$/$N=1$ LLs of bilayer graphene, the FQH states we observe in the $N=2$ LL are consistent with the CF model: within a LL, they form a complete sequence of particle-hole symmetric states whose relative strength is dependent on their denominators. The FQH states in the $N=2$ LL display energy gaps of a few Kelvin, comparable to and in some cases larger than those of fractional states in the $N=0$/$N=1$ LLs. The FQH states we observe form, to the best of our knowledge, the highest set of particle-hole symmetric pairs seen in any material system. △ Less

Submitted 29 February, 2016; originally announced March 2016.

Floating up of the zero-energy Landau level in monolayer epitaxial graphene

Authors: Lung-I Huang, Yanfei Yang, Randolph E. Elmquist, Shun-Tsung Lo, Fan-Hung Liu, Chi-Te Liang

Abstract: We report on magneto-transport measurements on low-density, large-area monolayer epitaxial graphene devices grown on SiC. We show that the zero-energy Landau level (LL) in monolayer graphene, which is predicted to be magnetic field ($B$)-independent, can float up above the Fermi energy at low $B$. This is supported by the temperature ($T$)-driven flow diagram approximated by the semi-circle law as… ▽ More We report on magneto-transport measurements on low-density, large-area monolayer epitaxial graphene devices grown on SiC. We show that the zero-energy Landau level (LL) in monolayer graphene, which is predicted to be magnetic field ($B$)-independent, can float up above the Fermi energy at low $B$. This is supported by the temperature ($T$)-driven flow diagram approximated by the semi-circle law as well as the $T$-independent point in the Hall conductivity $σ_{xy}$ near $e^2/h$. Our experimental data are in sharp contrast to conventional understanding of the zeroth LL and metallic-like behavior in pristine graphene prepared by mechanical exfoliation at low $T$. This surprising result can be ascribed to substrate-induced sublattice symmetry breaking which splits the degeneracy of the zeroth Landau level. Our finding provides a unified picture regarding the metallic behavior in pristine graphene prepared by mechanical exfoliation, and the insulating behavior and the insulator-quantum Hall transition in monolayer epitaxial graphene. △ Less

Submitted 26 February, 2016; originally announced February 2016.

Comments: 4 figures with supplementary Information

Observation of quantum Hall plateau-plateau transition and scaling behavior of the zeroth Landau level in graphene p-n-p junctions

Authors: Cheng-Hua Liu, Po-Hsiang Wang, Tak-Pong Woo, Fu-Yu Shih, Shih-Ching Liou, Po-Hsun Ho, Chun-Wei Chen, Chi-Te Liang, Wei-Hua Wang

Abstract: We report distinctive magnetotransport properties of a graphene p-n-p junction prepared by controlled diffusion of metallic contacts. In most cases, materials deposited on a graphene surface introduce substantial carrier scattering, which greatly reduces the high mobility of intrinsic graphene. However, we show that an oxide layer only weakly perturbs the carrier transport, which enables fabricati… ▽ More We report distinctive magnetotransport properties of a graphene p-n-p junction prepared by controlled diffusion of metallic contacts. In most cases, materials deposited on a graphene surface introduce substantial carrier scattering, which greatly reduces the high mobility of intrinsic graphene. However, we show that an oxide layer only weakly perturbs the carrier transport, which enables fabrication of a high-quality graphene p-n-p junction through a one-step and resist-free method. The measured conductance-gate voltage $(G-V_G)$ curves can be well described by a metal contact model, which confirms the charge density depinning due to the oxide layer. The graphene p-n-p junction samples exhibit pronounced quantum Hall effect, a well-defined transition point of the zeroth Landau level (LL), and scaling behavior. The scaling exponent obtained from the evolution of the zeroth LL width as a function of temperature exhibits a relatively low value of $κ=0.21\pm0.01$. Moreover, we calculate the energy level for the LLs based on the distribution of plateau-plateau transition points, further validating the assignment of the LL index of the QH plateau-plateau transition. △ Less

Submitted 6 January, 2016; originally announced January 2016.

Liquid structure changes of Bi under different melt states

Authors: Ziyang He, Chen Liang, Guoqiu He

Abstract: This paper is focused on the relationship between solidification and melt sates. An abnormal change which takes place at 744 C from 84 to 120 min indicated a liquid-liquid structure transition in pure Bi melt. Based on liquid-liquid structure transition, experiments of pure Bi were carried out. Cooling from different melt states, the solidification behaviors and structures changed a lot, such as u… ▽ More This paper is focused on the relationship between solidification and melt sates. An abnormal change which takes place at 744 C from 84 to 120 min indicated a liquid-liquid structure transition in pure Bi melt. Based on liquid-liquid structure transition, experiments of pure Bi were carried out. Cooling from different melt states, the solidification behaviors and structures changed a lot, such as undercooling, solidification time, grain sizes and the number of twins and pedestal sits. Especially, as a semi-metal, a liquid-liquid structure transition greatly increases the metallicity of Bi, and during the solidification Bi turned from smooth to coarse solid/ liquid interface. △ Less

Submitted 26 August, 2018; v1 submitted 23 November, 2015; originally announced November 2015.

Comments: We are withdrawing this paper as Ziyang He has not agreed to post to arXiv

Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect Transistors

Authors: Yueh-Chun Wu, Cheng-Hua Liu, Shao-Yu Chen, Fu-Yu Shih, Po-Hsun Ho, Chun-Wei Chen, Chi-Te Liang, Wei-Hua Wang

Abstract: Recent discoveries of the photoresponse of molybdenum disulfide (MoS2) have shown the considerable potential of these two-dimensional transition metal dichalcogenides for optoelectronic applications. Among the various types of photoresponses of MoS2, persistent photoconductivity (PPC) at different levels has been reported. However, a detailed study of the PPC effect and its mechanism in MoS2 is st… ▽ More Recent discoveries of the photoresponse of molybdenum disulfide (MoS2) have shown the considerable potential of these two-dimensional transition metal dichalcogenides for optoelectronic applications. Among the various types of photoresponses of MoS2, persistent photoconductivity (PPC) at different levels has been reported. However, a detailed study of the PPC effect and its mechanism in MoS2 is still not available, despite the importance of this effect on the photoresponse of the material. Here, we present a systematic study of the PPC effect in monolayer MoS2 and conclude that the effect can be attributed to random localized potential fluctuations in the devices. Notably, the potential fluctuations originate from extrinsic sources based on the substrate effect of the PPC. Moreover, we point out a correlation between the PPC effect in MoS2 and the percolation transport behavior of MoS2. We demonstrate a unique and efficient means of controlling the PPC effect in monolayer MoS2, which may offer novel functionalities for MoS2-based optoelectronic applications in the future. △ Less

Submitted 19 May, 2015; originally announced May 2015.

TDDFT calculations for excitation spectra of III-V ternary alloys

Authors: Zhenhua Ning, Ching-Tarng Liang, Yia-Chung Chang

Abstract: We adopted the time-dependent density functional theory (TDDFT) within the linear augmented Slater-type orbitals (LASTO) basis and the cluster averaging method to compute the {\color{red}excitation} spectra of III-V ternary alloys with arbitrary concentration $x$. The TDDFT was carried out with the use of adiabatic meta-generalized gradient approximation (mGGA), which contains the $1/q^2$ singular… ▽ More We adopted the time-dependent density functional theory (TDDFT) within the linear augmented Slater-type orbitals (LASTO) basis and the cluster averaging method to compute the {\color{red}excitation} spectra of III-V ternary alloys with arbitrary concentration $x$. The TDDFT was carried out with the use of adiabatic meta-generalized gradient approximation (mGGA), which contains the $1/q^2$ singularity in the dynamical exchange-correlation kernel ($f_{XC,00}(\mathbf{q})$) as $q\rightarrow 0$. We found that by using wave functions obtained in local density approximation (LDA) while using mGGA to compute self-energy correction to the band structures, we can get {\color{red} good overall} agreement between theoretical results and experimental data for the excitation spectra. Thus, our studies provide some insight into the theoretical calculation of optical spectra of semiconductor alloys. △ Less

Submitted 22 July, 2017; v1 submitted 9 October, 2014; originally announced October 2014.

Comments: 8 pages, 5 figures. Accepted by PRB

Journal ref: Phys. Rev. B 96, 085202, 2017

ARPES insights on the metallic states of YbB6(001): E(k) dispersion, temporal changes and spatial variation

Authors: Emmanouil Frantzeskakis, Nick de Jong, Jiuxing Zhang, Xin Zhang, Zhi Li, Chaolong Liang, Yang Wang, Andrei Varykhalov, Yingkai Huang, Mark S. Golden

Abstract: We report high resolution Angle Resolved PhotoElectron Spectroscopy (ARPES) results on the (001) cleavage surface of YbB$_{6}$, a rare-earth compound which has been recently predicted to host surface electronic states with topological character. We observe two types of well-resolved metallic states, whose Fermi contours encircle the time-reversal invariant momenta of the YbB$_{6}$(001) surface Bri… ▽ More We report high resolution Angle Resolved PhotoElectron Spectroscopy (ARPES) results on the (001) cleavage surface of YbB$_{6}$, a rare-earth compound which has been recently predicted to host surface electronic states with topological character. We observe two types of well-resolved metallic states, whose Fermi contours encircle the time-reversal invariant momenta of the YbB$_{6}$(001) surface Brillouin zone, and whose full (E,$k$)-dispersion relation can be measured wholly unmasked by states from the rest of the electronic structure. Although the two-dimensional character of these metallic states is confirmed by their lack of out-of-plane dispersion, two new aspects are revealed in these experiments. Firstly, these states do not resemble two branches of opposite, linear velocity that cross at a Dirac point, but rather straightforward parabolas which terminate to high binding energy with a clear band bottom. Secondly, these states are sensitive to time-dependent changes of the YbB$_{6}$ surface under ultrahigh vacuum conditions. Adding the fact that these data from cleaved YbB$_{6}$ surfaces also display spatial variations in the electronic structure, it appears there is little in common between the theoretical expectations for an idealized YbB$_{6}$(001) crystal truncation on the one hand, and these ARPES data from real cleavage surfaces on the other. △ Less

Submitted 25 November, 2014; v1 submitted 23 September, 2014; originally announced September 2014.

Comments: 8 pages, 4 figures (accepted in Physical Review B)

Journal ref: Phys. Rev. B 90, 235116, 2014

Transport in disordered monolayer molybdenum disulfide nanoflakes: evidence for inhomogeneous charge transport

Authors: Shun-Tsung Lo, O. Klochan, C. -H. Liu, W. -H. Wang, A. R. Hamilton, C. -T. Liang

Abstract: We study charge transport in a monolayer molybdenum disulfide nanoflake over a wide range of carrier density, temperature, and electric bias. We find that the transport is best described by a percolating picture in which the disorder breaks translational invariance, breaking the system up into a series of puddles, rather than previous pictures in which the disorder is treated as homogeneous and un… ▽ More We study charge transport in a monolayer molybdenum disulfide nanoflake over a wide range of carrier density, temperature, and electric bias. We find that the transport is best described by a percolating picture in which the disorder breaks translational invariance, breaking the system up into a series of puddles, rather than previous pictures in which the disorder is treated as homogeneous and uniform. Our work provides insight to a unified picture of charge transport in monolayer molybdenum disulfide nanoflakes and contributes to the development of next-generation molybdenum disulfide based devices. △ Less

Submitted 30 August, 2014; originally announced September 2014.

Comments: Evidence for inhomogeneous charge transport in Molybdenum disulfide

Journal ref: Nanotechnol. 25, 375201 (2014)

Low Carrier Density Epitaxial Graphene Devices On SiC

Authors: Yanfei Yang, Lung-I Huang, Yasuhiro Fukuyama, Fan-Hung Liu, Mariano A. Real, Paola Barbara, Chi-Te Liang, David B. Newell, Randolph E. Elmquist

Abstract: Monolayer epitaxial graphene (EG) grown on hexagonal Si-terminated SiC substrates is intrinsically electron-doped (carrier density is about 10^13 cm^(-2)). We demonstrate a clean device fabrication process using a precious-metal protective layer, and show that etching with aqua regia results in p-type (hole) molecular doping of our un-gated, contamination-free EG. Devices fabricated by this simple… ▽ More Monolayer epitaxial graphene (EG) grown on hexagonal Si-terminated SiC substrates is intrinsically electron-doped (carrier density is about 10^13 cm^(-2)). We demonstrate a clean device fabrication process using a precious-metal protective layer, and show that etching with aqua regia results in p-type (hole) molecular doping of our un-gated, contamination-free EG. Devices fabricated by this simple process can reach a carrier density in the range of 10^10 cm^(-2) to 10^11 cm^(-2) with mobility about 8000 cm^2/V/s or higher. In a moderately doped device with a carrier density n = 2.4 x 10^11 cm^(-2) and mobility = 5200 cm^2/V/s, we observe highly developed quantized Hall resistance plateaus with filing factor of 2 at magnetic field strengths of less than 4 T. Doping concentrations can be restored to higher levels by heat treatment in Ar, while devices with both p-type and n-type majority carriers tend to drift toward lower carrier concentrations in ambient air. △ Less

Submitted 3 April, 2014; originally announced April 2014.

Experimental evidence for direct insulator-quantum Hall transition in multi-layer graphene

Authors: Chiashain Chuang, Li-Hung Lin, Nobuyuki Aoki, Takahiro Ouchi, Akram M. Mahjoub, Tak-Pong Woo, J. P. Bird, Yuichi Ochiai, Shun-Tsung Lo, Chi-Te Liang

Abstract: We have performed magnetotransport measurements on a multi-layer graphene flake. At the crossing magnetic field Bc, an approximately temperature-independent point in the measured longitudinal resistivity, which is ascribed to the direct insulator-quantum Hall (I-QH) transition, is observed. By analyzing the amplitudes of the magnetoresistivity oscillations, we are able to measure the quantum mobil… ▽ More We have performed magnetotransport measurements on a multi-layer graphene flake. At the crossing magnetic field Bc, an approximately temperature-independent point in the measured longitudinal resistivity, which is ascribed to the direct insulator-quantum Hall (I-QH) transition, is observed. By analyzing the amplitudes of the magnetoresistivity oscillations, we are able to measure the quantum mobility of our device. It is found that at the direct I-QH transition, the product of the quantum mobility and is about 0.37 which is considerably smaller than 1. In contrast, at Bc, the longitudinal resistivity is close to the Hall resistivity, i.e., the product of the classical mobility and the crossing field is about 1. Therefore our results suggest that different mobilities need to be introduced for the direct I-QH transition observed in multi-layered graphene. Combined with existing experimental results obtained in various material systems, our data obtained on graphene suggest that the direct I-QH transition is a universal effect in 2D. △ Less

Submitted 2 November, 2013; originally announced November 2013.

Comments: 4 figures

Journal ref: Nanoscale Research Letters 8, 214 (2013)

Non-Ohmic behavior of carrier transport in highly disordered graphene

Authors: Shun-Tsung Lo, Chiashain Chuang, R. K. Puddy, T. -M. Chen, C. G. Smith, C. -T. Liang

Abstract: We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By apply a high source-drain voltage Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hopping transport occurs. In the activationless-hopping reg… ▽ More We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By apply a high source-drain voltage Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hopping transport occurs. In the activationless-hopping regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small Vsd occurs with the presence of high electric field and perpendicular magnetic field.. △ Less

Submitted 26 October, 2013; v1 submitted 22 October, 2013; originally announced October 2013.

Comments: Reported by nanotechweb.org. Two references added

Report number: Nanotechnology 24, 165201 (2013)

Nitrogen-Doped Graphene Sheets Grown by Chemical Vapor Deposition: Synthesis and Influence of Nitrogen Impurities on Carrier Transport

Authors: Yu-Fen Lu, Shun-Tsung Lo, Jheng-Cyuan Lin, Wenjing Zhang, Jing-Yu Lu, Fan-Hung Liu, Chuan-Ming Tseng, Yi-Hsien Lee, Chi-Te Liang, Lain-Jong Li

Abstract: A significant advance toward achieving practical applications of graphene as a two-dimensional material in nanoelectronics would be provided by successful synthesis of both n-type and p-type doped graphene. However reliable doping and a thorough understanding of carrier transport in the presence of charged impurities governed by ionized donors or acceptors in the graphene lattice are still lacking… ▽ More A significant advance toward achieving practical applications of graphene as a two-dimensional material in nanoelectronics would be provided by successful synthesis of both n-type and p-type doped graphene. However reliable doping and a thorough understanding of carrier transport in the presence of charged impurities governed by ionized donors or acceptors in the graphene lattice are still lacking. Here we report experimental realization of few-layer nitrogen-doped (N-doped) graphene sheets by chemical vapor deposition of organic molecule 1, 3, 5-triazine on Cu metal catalyst. By reducing the growth temperature, the atomic percentage of nitrogen doping is raised from 2.1 % to 5.6 %. With increasing doping concentration, N-doped graphene sheet exhibits a crossover from p-type to n-type behavior accompanied by a strong enhancement of electron-hole transport asymmetry, manifesting the influence of incorporated nitrogen impurities. In addition, by analyzing the data of X-ray photoelectron spectroscopy, Raman spectroscopy, and electrical measurements, we show that pyridinic and pyrrolic N impurities play an important role in determining the transport behavior of carriers in N-doped graphene sheets. △ Less

Submitted 22 October, 2013; originally announced October 2013.

Comments: 8 figures

Journal ref: ACS Nano 7, 6522 (2013)