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Polarization spontaneous and piezo: fundamentals and their implementation in ab initio calculations
Authors:
Pawel Strak,
Pawel Kempisty,
Konrad Sakowski,
Jacek Piechota,
Izabella Grzegory,
Eva Monroy,
Agata Kaminska,
Stanislaw Krukowski
Abstract:
Fundamental properties of spontaneous and piezo polarization are reformulated and critically reviewed. It was demonstrated that Landau definition of polarization as a dipole density could be used to the infinite systems. The difference between the bulk polarization and surface polarity are distinguished thus creating clear identification of both components. The local model of spontaneous polarizat…
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Fundamental properties of spontaneous and piezo polarization are reformulated and critically reviewed. It was demonstrated that Landau definition of polarization as a dipole density could be used to the infinite systems. The difference between the bulk polarization and surface polarity are distinguished thus creating clear identification of both components. The local model of spontaneous polarization was created and used to calculate spontaneous polarization as the electric dipole density. It was shown that the proposed local model correctly predicts c-axis spontaneous polarization values of the nitride wurtzite semiconductors. It was also shown that the proposed model predicts zero polarization in the plane perpendicular to the c-axis, in accordance with symmetry requirements. In addition, the model results are in accordance with polarization equal to zero for zinc blende lattice. These data confirm the basic correctness of the proposed model. The spontaneous polarization values obtained for all wurtzite III nitrides (BN, AlN, GaN and InN) are in basic agreement with the earlier calculations using Berry phase and slab models of Bernardini et al. {Bernardini et al. Phys Rev B 56 (2001) R10024 & 63 (2001) 193201} but not with Dreyer et al. {Dreyer et al. Phys. Rev X 6 (2016) 021038}. Wurtzite nitride superlattices ab initio calculations were performed to derive polarization-induced fields in the coherently strained lattices showing good agreement with the polarization values. The strained superlattice data were used to determine the piezoelectric parameters of wurtzite nitrides obtaining the values that were in basic agreement with the earlier data. Zinc blende superlattices were also modeled using ab initio calculations showing results that are in agreement with the absence of polarization of all nitrides in zinc blende symmetry.
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Submitted 1 July, 2024;
originally announced July 2024.
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Augmentation of the Electron Counting Rule with Ising Model
Authors:
Karol Kawka,
Pawel Kempisty,
Konrad Sakowski,
Stanislaw Krukowski,
Michal Bockowski,
David Bowler,
Akira Kusaba
Abstract:
On semiconductor growth surfaces, surface reconstructions appear. Estimation of the reconstructed structures is essential for understanding and controlling growth phenomena. In this study, the stability of a mixture of two different surface reconstructions is investigated. Since the number of candidate structures is enormous, the structures sampled by Bayesian optimization are analyzed. As a resul…
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On semiconductor growth surfaces, surface reconstructions appear. Estimation of the reconstructed structures is essential for understanding and controlling growth phenomena. In this study, the stability of a mixture of two different surface reconstructions is investigated. Since the number of candidate structures is enormous, the structures sampled by Bayesian optimization are analyzed. As a result, the local electron counting (EC) rule alone was found to be insufficient to explain such stability. Then, augmenting the EC rule, a data-driven Ising model is proposed. The model allows the evaluation of the whole enormous number of candidate structures. The approach is expected to be useful for theoretical studies of such mixtures on various semiconductor surfaces.
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Submitted 8 February, 2024;
originally announced February 2024.
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Surface charge induced $sp^3$-$sp^2$ transformation: new energy optimization universal mechanism of (4x4) reconstruction of stoichiometric GaN(0001) surface
Authors:
Paweł Strak,
Wolfram Miller,
Stanisław Krukowski
Abstract:
Ab initio calculations were applied to large size slabs simulations for determination of the properties of the principal structures of the stoichiometric GaN(0001) surface. The results are different from published previously: stoichiometric GaN(0001) surface structure is characterized by mixed structure in which 3/8 top layer Ga atoms remain in standard position with $sp^3$ hybridized bonding whil…
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Ab initio calculations were applied to large size slabs simulations for determination of the properties of the principal structures of the stoichiometric GaN(0001) surface. The results are different from published previously: stoichiometric GaN(0001) surface structure is characterized by mixed structure in which 3/8 top layer Ga atoms remain in standard position with $sp^3$ hybridized bonding while the remaining 5/8 top layer Ga atoms is located in plane of N atoms with $sp^2$ hybridized bonding. This involves charge transfer to the previous one, entailing energy optimization, therefore Ga-s and Ga-p energy difference is driving force for the transition. In large size surfaces Ga atoms create (4 x 4) reconstruction which is additionally stabilized by strain optimization. Heavy doping in the bulk changes $sp^3$ to $sp^2$ ratio thus confirming the charge transfer mechanism of the reconstruction. The charge transfer energy optimization is universal for all surfaces terminated by $sp^3$ bonded atoms.
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Submitted 22 January, 2024; v1 submitted 12 January, 2024;
originally announced January 2024.
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Coulomb contribution to Shockley-Read-Hall (SRH) recombination
Authors:
Konrad Sakowski,
Pawel Strak,
Pawel Kempisty,
Jacek Piechota,
Izabella Grzegory,
Piotr Perlin,
Eva Monroy,
Agata Kaminska,
Stanislaw Krukowski
Abstract:
Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination is reformulated. The introduced model considers Coulomb attraction between charged deep defect and the approaching free carrier, showing that this effect may cause considerable increase of the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates.…
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Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination is reformulated. The introduced model considers Coulomb attraction between charged deep defect and the approaching free carrier, showing that this effect may cause considerable increase of the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates. It is demonstrated that in the typical semiconductor device or semiconductor medium, the SRH recombination cannot be neglected at low temperatures. The SRH is more effective in the case of low doped semiconductors. Effective screening by mobile carrier density could reduce the effect, leading to SRH rate increase.
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Submitted 26 January, 2024; v1 submitted 18 October, 2023;
originally announced October 2023.
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Macrosteps dynamics and the growth of crystals and epitaxial layers
Authors:
Stanislaw Krukowski,
Konrad Sakowski,
Paweł Strak,
Paweł Kempisty,
Jacek Piechota,
Izabella Grzegory
Abstract:
Step pattern stability of the vicinal surfaces during growth was analyzed using various surface kinetic models. It was shown that standard analysis of the vicinal surfaces provides no indication on the possible step coalescence and therefore could not be used to elucidate macrostep creation during growth. A scenario of the instability, leading go macrostep creation was based on the dynamics of the…
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Step pattern stability of the vicinal surfaces during growth was analyzed using various surface kinetic models. It was shown that standard analysis of the vicinal surfaces provides no indication on the possible step coalescence and therefore could not be used to elucidate macrostep creation during growth. A scenario of the instability, leading go macrostep creation was based on the dynamics of the step train. The critical is step motion at the rear of the train which leads to double and multiple step creation. The condition is that the step density ratio in and out of the train lower than 2 prevents double step formation irrespective of the kinetics. For higher step density ratio low density of the step promotes single step stability. Fast step kinetics from lower terrace stabilizes the single steps slow (high barrier) is promoting step coalescence. The incorporation kinetics from upper terrace role is close to neutral. The creation of double step creates slow the step in front to accelerate and catch the previous double step while those behind catch up the double step creating multistep structure. The multistep are not mobile as the alimentation leads to emission of single step which moves forward. The final structure consist of macrosteps and superterraces with the number of single steps moving forward. Thus the single step motion is essential crystal growth mode despite the presence of the macrosteps. The macrostep are prone to creation of the overhangs which results from surface dynamics coupling to impingement from the mother phase. The angular preferential access of the bulk material to the macrostep edge, leads to diffusive instability. Therefore it is expected that harmful influence of the macrosteps by creation of inclusions and dislocation is stronger during growth from the liquid phase.
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Submitted 11 January, 2023; v1 submitted 22 March, 2022;
originally announced March 2022.
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Polarization doping ab initio verification of the concept charge conservation and nonlocality
Authors:
Ashfaq Ahmad,
Pawel Strak,
Pawel Kempisty,
Konrad Sakowski,
Jacek Piechota,
Yoshihiro Kangawa,
Izabella Grzegory,
Michal Leszczynski,
Zbigniew R. Zytkiewicz,
Grzegorz Muziol,
Eva Monroy,
Stanislaw Krukowski,
Agata Kaminska
Abstract:
In this work, we study the emergence of polarization doping in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation law applies for fixed and mobile charges separately, leading to nonlocal compensation phenomena involving bulk fixed and mobile charge and polarization sheet charge at the heterointerfaces. The magnitude of the effect allo…
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In this work, we study the emergence of polarization doping in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation law applies for fixed and mobile charges separately, leading to nonlocal compensation phenomena involving bulk fixed and mobile charge and polarization sheet charge at the heterointerfaces. The magnitude of the effect allows obtaining technically viable mobile charge density for optoelectronic devices without impurity doping (donors or acceptors). Therefore, it provides an additional tool for the device designer, with the potential to attain high conductivities: high carrier concentrations can be obtained even in materials with high dopant ionization energies, and the mobility is not limited by scattering at ionized impurities.
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Submitted 22 March, 2022; v1 submitted 2 June, 2021;
originally announced June 2021.
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Comment to "Topological insulators and superconductors" by Xiao-Liang Qi and Shou-Cheng Zhang Reviews of Modern Physics 83, 1057 (2011)
Authors:
Stanisław Krukowski,
Paweł Kempisty,
Paweł Strak,
Konrad Sakowski
Abstract:
The paper reports on the solution in the semi-space corresponding to topological surface state. It was shown that the exponential surface state results from selection of the energy outside the allowed energy range. In the result, the kinetic energy of the state is negative proving that the proposed state is not physically correct solution.
The paper reports on the solution in the semi-space corresponding to topological surface state. It was shown that the exponential surface state results from selection of the energy outside the allowed energy range. In the result, the kinetic energy of the state is negative proving that the proposed state is not physically correct solution.
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Submitted 20 February, 2019;
originally announced February 2019.
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Comment to "Quantum Spin Hall Effect and Topological Phase Transition in HGTe Quantum Wells" by B. Andrei Bernevig, Taylor L. Hughes and Shou-Cheng Zhang Science 314, 1757 (2006)
Authors:
Stanisław Krukowski,
Paweł Kempisty,
Paweł Strak,
Konrad Sakowski
Abstract:
The manuscript contains Comment to "Quantum Spin Hall Effect and Topological Phase Transitio in HGTe Quantum Wells" by B. Andrei Bernevig, Taylor L. Hughes and Shou-Cheng Zhang Science 314, 1757 (2006). The text proves that the quantum state, identified by these authors as the surface state located inside HgTe well is incorrect physically. The kinetic energy of the state is negative. The state can…
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The manuscript contains Comment to "Quantum Spin Hall Effect and Topological Phase Transitio in HGTe Quantum Wells" by B. Andrei Bernevig, Taylor L. Hughes and Shou-Cheng Zhang Science 314, 1757 (2006). The text proves that the quantum state, identified by these authors as the surface state located inside HgTe well is incorrect physically. The kinetic energy of the state is negative. The state cannot be identified as proper eigenfunction (vector) in the Hilbert space. Therefore the state could be used as a primer in the topological state theory, developed in the following publications.
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Submitted 13 February, 2019;
originally announced February 2019.
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Dissipation of the excess energy of the adsorbate- thermalization via electron transfer
Authors:
Paweł Strak,
Konrad Sakowski,
Stanisław Krukowski
Abstract:
A new scenario of thermalization process of the adsorbate attached at solid surfaces is proposed. The scenario is based on existence of electric dipole layer in which the electron wavefunctions extend over the positive ions. Thus the strong local electric field exists which drags electron into the solids and repels the positive ions. The electrons are tunneling conveying the energy into the solid…
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A new scenario of thermalization process of the adsorbate attached at solid surfaces is proposed. The scenario is based on existence of electric dipole layer in which the electron wavefunctions extend over the positive ions. Thus the strong local electric field exists which drags electron into the solids and repels the positive ions. The electrons are tunneling conveying the energy into the solid interior. The positive ions are retarded in the field, which allows them to loose excess kinetic energy and to be located smoothly into the adsorption sites. In this way the excess energy is not dissipated locally avoiding melting or creation of defects, in accordance with the experiments. The scenario is supported by the ab intio calculation results including density function theory of the slabs representing AlN surface and the Schrodinger equation for time evolution of hydrogen-like atom at the solid surface.
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Submitted 8 November, 2016;
originally announced November 2016.
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Effect of edge dislocations on structural and electric properties of 4H-SiC
Authors:
Jan Łażewski,
Paweł T. Jochym,
Przemysław Piekarz,
Małgorzata Sternik,
Krzysztof Parlinski,
Jan Cholewiński,
Paweł Dłużewski,
Stanisław Krukowski
Abstract:
The paper presents a study of two full-core, edge dislocations of opposite Burgers vectors in 4H-SiC, conducted using the first-principles density functional theory methods. We have determined the creation energy of the dislocations as a function of distance between their cores. The radial distribution function has been applied to examine strong impact of the dislocations on the local crystal stru…
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The paper presents a study of two full-core, edge dislocations of opposite Burgers vectors in 4H-SiC, conducted using the first-principles density functional theory methods. We have determined the creation energy of the dislocations as a function of distance between their cores. The radial distribution function has been applied to examine strong impact of the dislocations on the local crystal structure. The analysis of the electronic structure reveals mid-gap levels induced by broken atomic bonds in the dislocation core. The maps of charge distribution and electrostatic potential have been calculated and the significant decrease of the electrostatic barriers in the vicinity of the dislocation cores has been quantified. The obtained results have been discussed in the light of available experimental data.
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Submitted 1 February, 2015;
originally announced February 2015.
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Adsorption of ammonia at GaN(0001) surface in the mixed ammonia/hydrogen ambient - a summary of ab initio data
Authors:
Pawel Kempisty,
Stanislaw Krukowski
Abstract:
Adsorption of ammonia at NH3/NH2/H covered GaN(0001) surface was analyzed using results of ab initio calculations. The whole configuration space of partially NH3/NH2/H covered GaN(0001) surface was divided into zones differently pinned Fermi level: at Ga broken bond state for dominantly bare surface (region I), at VBM for NH2 and H covered (region II), and at CBM for NH3 covered surface (region II…
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Adsorption of ammonia at NH3/NH2/H covered GaN(0001) surface was analyzed using results of ab initio calculations. The whole configuration space of partially NH3/NH2/H covered GaN(0001) surface was divided into zones differently pinned Fermi level: at Ga broken bond state for dominantly bare surface (region I), at VBM for NH2 and H covered (region II), and at CBM for NH3 covered surface (region III). The extensive ab intio calculations show validity of electron counting rule (ECR) for all mixed coverage, for bordering these three regions. The adsorption was analyzed using newly identified dependence of the adsorption energy on the charge transfer at the surface. For region I and II ammonia adsorb dissociatively, disintegrating into H adatom and HN2 radical for large fraction of vacant sites while for high coverage the ammonia adsorption is molecular. The dissociative adsorption energy strongly depends on the Fermi level at the surface (pinned) and in the bulk (unpinned) while the molecular adsorption energy is determined by bonding to surface only, in accordance to the recently published theory. The molecular adsorption is determined by the energy of covalent bonding to the surface. Ammonia adsorption in region III (Fermi level pinned at CBM) leads to unstable configuration both molecular and dissociative which is explained by the fact that Ga-broken bond sites are doubly occupied by electrons. The adsorbing ammonia brings 8 electrons to the surface, necessitating transfer of the electrons from Ga-broken bond state to Fermi level, energetically costly process. Adsorption of ammonia at H-covered site leads to creation of NH2 radical at the surface and escape of H2 molecule. The process energy is close to 0.12 eV, thus not large, but the inverse process is not possible due to escape of the hydrogen molecule.
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Submitted 24 May, 2014;
originally announced May 2014.
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General aspects of the vapor growth of semiconductor crystals - a study based on DFT simulations of the NH3/NH2 covered GaN(0001) surface in hydrogen ambient
Authors:
Pawel Kempisty,
Pawel Strak,
Konrad Sakowski,
Stanislaw Krukowski
Abstract:
Vapor growth of semiconductors is analyzed using recently obtained dependence of the adsorption energy on the electron charge transfer between the surface adsorbed species and the bulk [Krukowski et al. J. Appl. Phys. 114 (2013) 063507, Kempisty et al. ArXiv 1307.5778 (2013)]. Ab initio calculations were performed to study the physical properties of GaN(0001) surface in ammonia-rich conditions, i.…
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Vapor growth of semiconductors is analyzed using recently obtained dependence of the adsorption energy on the electron charge transfer between the surface adsorbed species and the bulk [Krukowski et al. J. Appl. Phys. 114 (2013) 063507, Kempisty et al. ArXiv 1307.5778 (2013)]. Ab initio calculations were performed to study the physical properties of GaN(0001) surface in ammonia-rich conditions, i.e. covered by mixture of NH3 molecules and NH2 radicals. The Fermi level is pinned at valence band maximum (VBM) and conduction band minimum (CBM) for full coverage by NH3 molecules and NH2 radicals, respectively. For the crossover content of ammonia of about 25% monolayer (ML), the Fermi level is unpinned. It was shown that hydrogen adsorption energy depends on the doping in the bulk for the unpinned Fermi level, i.e. for this coverage. Surface structure thermodynamic and mechanical stability criteria are defined and compared. Mechanical stability of the coverage of such surfaces was checked by determination of the desorption energy of hydrogen molecules. Thermodynamic stability analysis indicates that initally equilibrium hydrogen vapor partial pressure steeply increases with NH3 content to attain the crossover NH3/NH2 coverage, i.e. the unpinned Fermi level condition. For such condition the entire range of experimentally accessible pressures belongs showing that vapor growth of semiconductor crystals occurs predominantly for unpinned Fermi level at the surface, i.e. for flat bands. Accordingly, adsorption energy of most species depends on the doping in the bulk that is basis of the possible molecular scenario explaining dependence of the growth and the doping of semiconductor crystals on the doping in the bulk
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Submitted 19 November, 2013;
originally announced November 2013.
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Energy of adsorption at semiconducting surfaces with Fermi level differently pinned -- ab initio study
Authors:
Paweł Kempisty,
Paweł Strak,
Konrad Sakowski,
Stanisław Krukowski
Abstract:
It is shown that adsorption energy at semiconductor surfaces critically depends on the charge transfer to or from the adsorbed species. For the processes without the charge transfer, such as molecular adsorption of closed shell systems, the adsorption energy is determined by the bonding only. In the case involving charge transfer, such as open shell systems like metal atoms or the dissociating mol…
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It is shown that adsorption energy at semiconductor surfaces critically depends on the charge transfer to or from the adsorbed species. For the processes without the charge transfer, such as molecular adsorption of closed shell systems, the adsorption energy is determined by the bonding only. In the case involving charge transfer, such as open shell systems like metal atoms or the dissociating molecules, the energy attains different value for the Fermi level differently pinned. The DFT simulation of adsorption of ammonia at hydrogen covered GaN(0001) confirms these predictions: the molecular adsorption is independent on the coverage while the dissociative process energy varies by several electronvolts.
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Submitted 22 August, 2013; v1 submitted 22 July, 2013;
originally announced July 2013.
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Fermi level influence on the adsorption at semiconductor surfaces - ab initio simulations
Authors:
Stanislaw Krukowski,
Pawel Kempisty,
Pawel Strak
Abstract:
Chemical adsorption of the species at semiconductor surfaces is analyzed showing the existence of the two contributions to adsorption energy: bond creation and charge transfer. It is shown that the energy of quantum surface states is affected by the electric field at the surface, nevertheless the potential contribution of electron and nuclei cancels out. The charge transfer contribution is Fermi l…
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Chemical adsorption of the species at semiconductor surfaces is analyzed showing the existence of the two contributions to adsorption energy: bond creation and charge transfer. It is shown that the energy of quantum surface states is affected by the electric field at the surface, nevertheless the potential contribution of electron and nuclei cancels out. The charge transfer contribution is Fermi level independent for pinned surfaces. Thus for Fermi level pinned at the surface, the adsorption energy is independent on the Fermi energy i.e. the doping in the bulk. The DFT simulations of adsorption of hydrogen at clean GaN(0001) and silicon at SiC(0001) surfaces confirmed independence of adsorption energy on the doping in the bulk. For the Fermi level nonpinned surfaces the charge contribution depends on the position of Fermi level in the bulk. Thus adsorption energy is sensitive to change of the Fermi energy in the bulk, i.e. the doping. The DFT simulations of adsorption of atomic hydrogen at 0.75 ML hydrogen covered GaN(0001) surface confirmed that the adsorption energy may be changed by about 2 eV by the doping change from n- to p-type.
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Submitted 12 June, 2013;
originally announced June 2013.
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Foundations of ab initio simulations of electric charges and fields at semiconductor surfaces within slab models
Authors:
Stanisław Krukowski,
Paweł Kempisty,
Paweł Strąk
Abstract:
Semiconductor surfaces were divided into charge categories, i.e. surface acceptor, donor and neutral ones that are suitable for simulations of their properties within a slab model. The potential profiles, close to the charged surface states, accounting for explicit dependence of the point defects energy, were obtained. A termination charge slab model was formulated and analyzed proving that two co…
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Semiconductor surfaces were divided into charge categories, i.e. surface acceptor, donor and neutral ones that are suitable for simulations of their properties within a slab model. The potential profiles, close to the charged surface states, accounting for explicit dependence of the point defects energy, were obtained. A termination charge slab model was formulated and analyzed proving that two control parameters of slab simulations exist: the slope and curvature of electric potential profiles which can be translated into a surface and volumetric charge density. The procedures of slab model parameter control are described and presented using examples of the DFT simulations of GaN and SiC surfaces showing the potential profiles, linear or curved, depending on the band charge within the slab. It was also demonstrated that the field at the surface may affect some surface properties in a considerable degree proving that verification of this dependence is obligatory for a precise simulation of the properties of semiconductor surfaces.
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Submitted 9 February, 2013;
originally announced February 2013.
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An influence of parallel electric field on the dispersion relation of graphene - a new route to Dirac logics
Authors:
Stanisław Krukowski,
Jakub Sołtys,
Jolanta Borysiuk,
Jacek Piechota
Abstract:
Ab initio density functional theory (DFT) simulations were used to investigate an influence of electric field, parallel to single and multilayer graphene on its electron dispersion relations close to K point. It was shown that for both single layer and AAAA stacking multilayer graphene under influence of parallel field the dispersion relations transform to nonlinear. The effect, associated with th…
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Ab initio density functional theory (DFT) simulations were used to investigate an influence of electric field, parallel to single and multilayer graphene on its electron dispersion relations close to K point. It was shown that for both single layer and AAAA stacking multilayer graphene under influence of parallel field the dispersion relations transform to nonlinear. The effect, associated with the hexagonal symmetry breaking, opens new route to high speed transistors and logical devices working in Dirac regime. The implementation of such device is presented.
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Submitted 18 September, 2012;
originally announced September 2012.
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High efficiency UV emitters - theoretical investigation of GaN/AlN heterostructures
Authors:
Pawel Strak,
Pawel Kempisty,
Stanislaw Krukowski
Abstract:
Density functional theory simulations were used to obtain physical properties of GaN/AlN system. Combination of these two compounds into multiquantum well (MQW) structure will induce strong electrostatic effect leading to emergence of high magnitude dipole layers at the AlN/GaN interfaces, which were first postulated by {Tersoff Phys. Rev. B 30(8) pp.4874 (1984)} and already identified in GaN/InN…
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Density functional theory simulations were used to obtain physical properties of GaN/AlN system. Combination of these two compounds into multiquantum well (MQW) structure will induce strong electrostatic effect leading to emergence of high magnitude dipole layers at the AlN/GaN interfaces, which were first postulated by {Tersoff Phys. Rev. B 30(8) pp.4874 (1984)} and already identified in GaN/InN by {Romanowski et al. J. Phys. Chem C 114. 14410 (2010)}. When combining GaN and AlN in to a heterostructure a spatial projection of wavefunctions indicate that valence band offset between states becomes of order of 0.85 V. Systematic analysis of influence of number of Ga atomic layers on the properties of wells have shown that for thickness up to 4 Ga layers, GaN behave as carriers locating potential minimum rather, while for larger thickness it is a standard quantum well. In all cases wells has strongly localized quantum states close to valance band maxima (VBM) and conduction band minimum (CBM). The calculated oscillator strength values rapidly decreases for the well thickness in excess of 8 Ga layers (~21 Å) which indicates that wells for UV emitters should be much thinner than these based on InGaN/GaN systems. The Quantum Confined Stark Effect (QCSE) related changes of the transition energy in function of the geometric arrangement were also obtained.
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Submitted 7 November, 2012; v1 submitted 29 August, 2012;
originally announced August 2012.
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On the nature of Surface States Stark Effect at clean GaN(0001) surface
Authors:
Paweł Kempisty,
Stanisław Krukowski
Abstract:
Recently developed model allows for simulations of electric field influence on the surface states. The results of slab simulations show considerable change of the energy of quantum states in the electric field, i.e. Stark Effect associated with the surface (SSSE - Surface States Stark Effect). Detailed studies of the GaN slabs demonstrate spatial variation of the conduction and valence band energy…
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Recently developed model allows for simulations of electric field influence on the surface states. The results of slab simulations show considerable change of the energy of quantum states in the electric field, i.e. Stark Effect associated with the surface (SSSE - Surface States Stark Effect). Detailed studies of the GaN slabs demonstrate spatial variation of the conduction and valence band energy revealing real nature of SSSE phenomenon. It is shown that long range variation of the electric potential is in accordance with the change of the energy of the conduction and valence bands. However, at short distances from GaN(0001) surface, the valence band follows the potential change while the conduction states energy is increased due to quantum overlap repulsion by surface states. It is also shown that at clean GaN(0001) surface Fermi level is pinned at about 0.34 eV below the long range projection of the conduction band bottom and varies with the field by about 0.31 eV due to electron filling of the surface states.
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Submitted 30 May, 2012;
originally announced May 2012.
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Step bunching process induced by the flow of steps at the sublimated crystal surface
Authors:
M. A. Zaluska-Kotur,
F. Krzyzewski,
S. Krukowski
Abstract:
Stepped GaN(0001) surface is studied by the kinetic Monte Carlo method and compared with the model based on Burton-Carbera-Frank equations. Successive stages of surface pattern evolution during high temperature sublimation process are discussed. At low sublimation rates clear, well defined step bunches form. The process happens in the absence or for very low Schwoebel barriers at the ideal surface…
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Stepped GaN(0001) surface is studied by the kinetic Monte Carlo method and compared with the model based on Burton-Carbera-Frank equations. Successive stages of surface pattern evolution during high temperature sublimation process are discussed. At low sublimation rates clear, well defined step bunches form. The process happens in the absence or for very low Schwoebel barriers at the ideal surface. Bunches of several steps are well separated, move slowly and are rather stiff. Character of the process changes for more rapid sublimation process where double step formations become dominant and together with meanders and local bunches assemble into the less ordered surface pattern. Solution of the analytic equations written for one dimensional system confirms that step bunching is induced by the particle advection caused by step-flow anisotropy. This anisotropy becomes important when due to the low Schwoebel barrier both sides of step are symmetric. Simulations show that in the opposite limit of very high Schwoebel barrier steps fracture and rough surface builds up.
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Submitted 1 March, 2012;
originally announced March 2012.
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Polarization and polarization induced electric field in nitrides - critical evaluation based on DFT studies
Authors:
Pawel Strak,
Pawel Kempisty,
Konrad Sakowski,
Stanislaw Krukowski
Abstract:
Density Functional Theory (DFT) calculations were used to evaluate polarity of group III nitrides, such as aluminum nitride (AlN), gallium nitride (GaN) and indium nitride (InN) providing physically sound quantitative measure of polarity of these materials. Two different approaches to polarization of nitride semiconductors were assessed and the conclusions have been used to develop models. It was…
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Density Functional Theory (DFT) calculations were used to evaluate polarity of group III nitrides, such as aluminum nitride (AlN), gallium nitride (GaN) and indium nitride (InN) providing physically sound quantitative measure of polarity of these materials. Two different approaches to polarization of nitride semiconductors were assessed and the conclusions have been used to develop models. It was shown that Berry phase formulation of the electron related polarization component provides a number of various solutions, different for various selection of the simulated volume. The electronic part gives saw-like pattern for polarization. A total number of these solutions, related to well known scaling of the geometric phase, is equal to the number of valence electrons in the system. Summation with similar pattern for ionic part provides several polarization values. Standard dipole density formulation depends on the selection of the simulation volume in periodic continuous way. Using a condition of continuous embedding into the infinite medium, and simultaneously, the zero surface charge representation at crystal boundary provides to physically sound solution. This solution is corresponding to maximal and minimal polarization values and also corresponds to different physical termination of the crystal surfaces, either bare or covered by complementary atoms. This change leads to polarization and electric field reversal. The polarization and related fields in finite size systems were obtained.
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Submitted 16 November, 2011; v1 submitted 20 October, 2011;
originally announced October 2011.
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Role of structure of C-terminated 4H-SiC(000) surface in growth of graphene layers - transmission electron microscopy and density functional theory studies
Authors:
Jolanta Borysiuk,
Jakub Sołtys,
Rafal Bożek,
Jacek Piechota,
Stanislaw Krukowski,
Wlodzimierz Strupinski,
Jacek M. Baranowski,
Roman Stepniewski
Abstract:
Principal structural defects in graphene layers, synthesized on a carbon-terminated face, i.e. the SiC(000) face of a 4H-SiC substrate, are investigated using microscopic methods. Results of high-resolution transmission electron microscopy (HRTEM) reveal their atomic arrangement. Mechanism of such defects creation, directly related to the underlying crystallographic structure of the SiC substrate,…
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Principal structural defects in graphene layers, synthesized on a carbon-terminated face, i.e. the SiC(000) face of a 4H-SiC substrate, are investigated using microscopic methods. Results of high-resolution transmission electron microscopy (HRTEM) reveal their atomic arrangement. Mechanism of such defects creation, directly related to the underlying crystallographic structure of the SiC substrate, is elucidated. The connection between the 4H-SiC(000) surface morphology, including the presence of the single atomic steps, the sequences of atomic steps, and also the macrosteps, and the corresponding emergence of planar defective structure (discontinuities of carbon layers and wrinkles) is revealed. It is shown that disappearance of the multistep island leads to the creation of wrinkles in the graphene layers. The density functional theory (DFT) calculation results show that the diffusion of both silicon and carbon atoms is possible on a Si-terminated SiC surface at a high temperature close to 1600°C. The creation of buffer layer at the Si-terminated surface effectively blocks horizontal diffusion, preventing growth of thick graphene layer at this face. At the carbon terminated SiC surface, the buffer layer is absent leaving space for effective horizontal diffusion of both silicon and carbon atoms. DFT results show that excess carbon atoms converts a topmost carbon layer to sp2 bonded configuration, liberating Si atoms in barrierless process. The silicon atoms escape through the channels created at the bending layers defects, while the carbon atoms are incorporated into the growing graphene layers. These results explain growth of thick graphene underneath existing graphene cover and also the creation of the principal defects at the C-terminated SiC(0001) surface
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Submitted 30 September, 2011;
originally announced September 2011.
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Structures built by steps of evaporated crystal surface Monte Carlo simulations and experimental data for GaN epi layers
Authors:
Magdalena A. Załuska-Kotur,
Filip Krzyżewski,
Stanisław Krukowski,
Robert Czernecki,
Michał Leszczyński
Abstract:
We present Monte Carlo simulation data obtained for the annealed surface GaN(0001) and compare them with the experimental data. High temperature particle evaporation is a part of substrate preparation processes before epitaxy. The ideal surface ordering expected after such heating is a pattern of parallel, equally distanced steps. It appears however, that different types of step structures emerge…
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We present Monte Carlo simulation data obtained for the annealed surface GaN(0001) and compare them with the experimental data. High temperature particle evaporation is a part of substrate preparation processes before epitaxy. The ideal surface ordering expected after such heating is a pattern of parallel, equally distanced steps. It appears however, that different types of step structures emerge at high temperatures. We show how the creation of characteristic patterns depends on the temperature and the annealing time. The first pattern is created for a very short evaporation time and consists of rough steps. The second pattern built by curly steps is characteristic for longer evaporation times and lower temperatures. The third pattern, in which steps merge together creating bunches of steps happens for the long enough time. At higher temperatures, bunches of steps bend into the wavy-like structures.
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Submitted 11 July, 2011;
originally announced July 2011.
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Long time evolution of meandered steps during the crystal growth processes
Authors:
Magdalena A. Załuska-Kotur,
Filip Krzyżewski,
Stanisław Krukowski
Abstract:
Step meandering during growth of gallium nitride (0001) surface is studied using kinetic Monte Carlo method. Simulated growth process, conducted in N-rich conditions are therefore controlled by Ga atoms surface diffusion. The model employs dominating four-body interactions of Ga atoms that cause step flow anisotropy during growth. Overall kinetics and shape selection features of step meandering ar…
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Step meandering during growth of gallium nitride (0001) surface is studied using kinetic Monte Carlo method. Simulated growth process, conducted in N-rich conditions are therefore controlled by Ga atoms surface diffusion. The model employs dominating four-body interactions of Ga atoms that cause step flow anisotropy during growth. Overall kinetics and shape selection features of step meandering are analyzed assuming their dependence on the external particle flux and on the temperature. It appears that at relatively high temperatures and low fluxes steps move regularly preserving their initial shapes of straight, parallel lines. For higher fluxes and at wide range of temperatures step meandering happens. It is shown that, depending on the initial surface parameters, two different scenarios of step meandering are realized. In both these regimes meandering has different character as a function of time. For relatively high fluxes meanders have wavelengths shorter than the terrace width and they grow independently. Eventually surface ends up as a rough structure. When flux is lower regular pattern of meanders emerges. Step meander even if Schwoebel barrier is absent. Too high barrier destroys step stability. The amplitude of wavelike step meanders increases in time up to a saturation value. The mechanism of such meander development is elucidated.
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Submitted 21 October, 2011; v1 submitted 27 May, 2011;
originally announced May 2011.
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Double step structure and meandering due to the many body interaction at GaN(0001) surface in N-rich conditions
Authors:
Magdalena A. Załuska-Kotur,
Filip Krzyżewski,
Stanisław Krukowski
Abstract:
Growth of gallium nitride on GaN(0001) surface is modeled by Monte Carlo method. Simulated growth is conducted in N-rich conditions, hence it is controlled by Ga atoms surface diffusion. It is shown that dominating four-body interactions of Ga atoms can cause step flow anisotropy. Kinetic Monte Carlo simulations show that parallel steps with periodic boundary conditions form double terrace structu…
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Growth of gallium nitride on GaN(0001) surface is modeled by Monte Carlo method. Simulated growth is conducted in N-rich conditions, hence it is controlled by Ga atoms surface diffusion. It is shown that dominating four-body interactions of Ga atoms can cause step flow anisotropy. Kinetic Monte Carlo simulations show that parallel steps with periodic boundary conditions form double terrace structures, whereas initially V -shaped parallel step train initially bends and then every second step moves forward, building regular, stationary ordering as observed during MOVPE or HVPE growth of GaN layers. These two phenomena recover surface meandered pair step pattern observed, since 1953, on many semiconductor surfaces, such as SiC, Si or GaN. Change of terrace width or step orientation particle diffusion jump barriers leads either to step meandering or surface roughening. Additionally it is shown that step behavior changes with the Schwoebel barrier height. Furthermore, simulations under conditions corresponding to very high external particle flux result in triangular islands grown at the terraces. All structures, emerging in the simulations, have their corresponding cases in the experimental results.
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Submitted 25 November, 2010; v1 submitted 14 September, 2010;
originally announced September 2010.
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Density functional theory study of quasi-free-standing graphene layer on 4H-SiC(0001) surface decoupled by hydrogen atoms
Authors:
Jakub Soltys,
Jacek Piechota,
Michal Lopuszynski,
Stanislaw Krukowski
Abstract:
Epitaxial graphene, grown on SiC(0001) surface, has been widely studied both experimentally and theoretically. It was found that first epitaxial graphene layer in such structures is a buffer layer i.e. there are no characteristic Dirac cones in the band structure associated with it. However, C. Riedl et al. (Phys. Rev. Lett. 103, 246804 (2009)) in their experimental work observed recently that h…
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Epitaxial graphene, grown on SiC(0001) surface, has been widely studied both experimentally and theoretically. It was found that first epitaxial graphene layer in such structures is a buffer layer i.e. there are no characteristic Dirac cones in the band structure associated with it. However, C. Riedl et al. (Phys. Rev. Lett. 103, 246804 (2009)) in their experimental work observed recently that hydrogen intercalation of SiC-graphene samples can recover electronic properties typical to selfstanding graphene. The possible scenarios of hydrogen intercalation inducing graphene layer decoupling, including both the hydrogen penetration paths and energetically stable positions of hydrogen atoms, were modeled in ab initio DFT calculations. From the obtained results it follows that, due to intercalation, the graphene layer moves away to achieve about 3.9 A distance from the SiC surface. Electronic band structure, calculated for such quasi free standing graphene, exhibits Dirac-cone behavior which is in agreement with ARPES measurements.
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Submitted 25 March, 2010; v1 submitted 25 February, 2010;
originally announced February 2010.
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Polarization analysis and Density Functional Theory (DFT) simulations of the electric field in InN/GaN multiple quantum wells (MQWs)
Authors:
Z. Romanowski,
P. Kempisty,
K. Sakowski,
S. Krukowski
Abstract:
Results of the first ab initio simulations of InN/GaN multiquantum well (MQW) system are presented. The DFT results confirm the presence of the polarization charge at InN/GaN interfaces, i.e. at polar InN/GaN heterostructures. These results show the potential jumps which is related to the presence of dipole layer at these interfaces. An electrostatic polarization analysis shows that the energy m…
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Results of the first ab initio simulations of InN/GaN multiquantum well (MQW) system are presented. The DFT results confirm the presence of the polarization charge at InN/GaN interfaces, i.e. at polar InN/GaN heterostructures. These results show the potential jumps which is related to the presence of dipole layer at these interfaces. An electrostatic polarization analysis shows that the energy minimum condition can be used to obtain the field in InN/GaN system, employing standard polarization parameters. DFT results are in good agreement with polarization data confirming the existence of electric field leading to separation of electron and holes in QWs and emergence of Quantum Confined Stark Effect (QCSE).
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Submitted 16 November, 2009;
originally announced November 2009.
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A comparative DFT study of electronic properties of 2H-, 4H- and 6H-SiC(0001) and SiC(000-1) clean surfaces: Significance of the surface Stark effect
Authors:
Jakub Soltys,
Jacek Piechota,
Michal Lopuszynski,
Stanislaw Krukowski
Abstract:
Electric field, uniform within the slab, emerging due to Fermi level pinning at its both sides is analyzed using DFT simulations of the SiC surface slabs of different thickness. It is shown that for thicker slab the field is nonuniform and this fact is related to the surface state charge. Using the electron density and potential profiles it is proved that for high precision simulations it is nec…
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Electric field, uniform within the slab, emerging due to Fermi level pinning at its both sides is analyzed using DFT simulations of the SiC surface slabs of different thickness. It is shown that for thicker slab the field is nonuniform and this fact is related to the surface state charge. Using the electron density and potential profiles it is proved that for high precision simulations it is necessary to take into account enough number of the Si-C layers. We show that using 12 diatomic layers leads to satisfactory results. It is also demonstrated that the change of the opposite side slab termination, both by different type of atoms or by their location, can be used to adjust electric field within the slab, creating a tool for simulation of surface properties, depending on the doping in the bulk of semiconductor. Using these simulations it was found that, depending on the electric field, the energy of the surface states changes in a different way than energy of the bulk states. This criterion can be used to distinguish Shockley and Tamm surface states. The electronic properties, i.e. energy and type of surface states of the three clean surfaces: 2H-, 4H-, 6H-SiC(0001), and SiC($000 \bar{1}$) are analyzed and compared using field dependent DFT simulations.
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Submitted 30 November, 2009; v1 submitted 24 July, 2009;
originally announced July 2009.
