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A methodology of quantifying membrane permeability based on returning probability theory and molecular dynamics simulation
Authors:
Yuya Matsubara,
Ryo Okabe,
Ren Masayama,
Nozomi Morishita Watanabe,
Hiroshi Umakoshi,
Kento Kasahara,
Nobuyuki Matubayasi
Abstract:
We propose a theoretical approach to estimate the permeability coefficient of substrates (permeants) for crossing membranes from donor (D) phase to acceptor (A) phase by means of molecular dynamics (MD) simulation. A fundamental aspect of our approach involves reformulating the returning probability (RP) theory, a rigorous bimolecular reaction theory, to describe permeation phenomena. This reformu…
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We propose a theoretical approach to estimate the permeability coefficient of substrates (permeants) for crossing membranes from donor (D) phase to acceptor (A) phase by means of molecular dynamics (MD) simulation. A fundamental aspect of our approach involves reformulating the returning probability (RP) theory, a rigorous bimolecular reaction theory, to describe permeation phenomena. This reformulation relies on the parallelism between permeation and bimolecular reaction processes. In the present method, the permeability coefficient is represented in terms of the thermodynamic and kinetic quantities for the reactive (R) phase that exists within the inner region of membranes. One can evaluate these quantities using multiple MD trajectories starting from phase R. We apply the RP theory to the permeation of ethanol and methylamine at different concentrations (infinitely dilute and 1 mol% conditions of permeants). Under the 1 mol% condition, the present method yields a larger permeability coefficient for ethanol ($0.12 \pm 0.01 ~\mathrm{cm~s^{-1}}$) than for methylamine ($0.069\pm 0.006~\mathrm{cm~s^{-1}}$), while the values of the permeability coefficient are satisfactorily close to those obtained from the brute-force MD simulations [$0.18\pm 0.03 ~\mathrm{cm~s^{-1}}$ and $0.052 \pm 0.005 ~\mathrm{cm~s^{-1}}$ for ethanol and methylamine, respectively]. Moreover, upon analyzing the thermodynamic and kinetic contributions to the permeability, we clarify that a higher concentration dependency of permeability for ethanol, as compared to methylamine, arises from the sensitive nature of ethanol's free-energy barrier within the inner region of the membrane against ethanol concentration.
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Submitted 6 June, 2024; v1 submitted 17 April, 2024;
originally announced April 2024.
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Influence of cholesterol on hydrogen-bond dynamics of water molecules in lipid-bilayer systems at varying temperatures
Authors:
Kokoro Shikata,
Kento Kasahara,
Nozomi Morishita Watanabe,
Hiroshi Umakoshi,
Kang Kim,
Nobuyuki Matubayasi
Abstract:
Cholesterol (Chol) plays a crucial role in shaping the intricate physicochemical attributes of biomembranes, exerting considerable influence on water molecules proximal to the membrane interface. In this study, we conducted molecular dynamics simulations on the bilayers of two lipid species, dipalmitoyl phosphatidylcholine (DPPC) and palmitoyl sphingomyelin (PSM); they are distinct with respect to…
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Cholesterol (Chol) plays a crucial role in shaping the intricate physicochemical attributes of biomembranes, exerting considerable influence on water molecules proximal to the membrane interface. In this study, we conducted molecular dynamics simulations on the bilayers of two lipid species, dipalmitoyl phosphatidylcholine (DPPC) and palmitoyl sphingomyelin (PSM); they are distinct with respect to the structures of the hydrogen-bond (H-bond) acceptors. Our investigation focuses on the dynamic properties and H-bonds of water molecules in the lipid-membrane systems, with particular emphasis on the influence of Chol at varying temperatures. Notably, in the gel phase at 303 K, the presence of Chol extends the lifetimes of H-bonds of the oxygen atoms acting as H-bond acceptors within DPPC with water molecules by a factor of 1.5 to 2.5. In the liquid-crystalline phase at 323 K, on the other hand, H-bonding dynamics with lipid membranes remain largely unaffected by Chol. This observed shift in H-bonding states serves as a crucial key to unraveling the subtle control mechanisms governing water dynamics in lipid-membrane systems.
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Submitted 3 July, 2024; v1 submitted 13 March, 2024;
originally announced March 2024.
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Exchange-driven magnetoresistance in silicon facilitated by electrical spin injection
Authors:
Yuichiro Ando,
Lan Qing,
Yang Song,
Shinya Yamada,
Kenji Kasahara,
Kentarou Sawano,
Masanobu Miyao,
Hanan Dery,
Kohei Hamaya
Abstract:
We use electrical spin injection to probe exchange interactions in phosphorus doped silicon (Si:P). The detection is enabled by a magnetoresistance effect that demonstrates the efficiency of exchange in imprinting spin information from the magnetic lead onto the localized moments in the Si:P region. A unique Lorentzian-shaped signal existing only at low temperatures ($\lesssim 25 K$) is observed e…
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We use electrical spin injection to probe exchange interactions in phosphorus doped silicon (Si:P). The detection is enabled by a magnetoresistance effect that demonstrates the efficiency of exchange in imprinting spin information from the magnetic lead onto the localized moments in the Si:P region. A unique Lorentzian-shaped signal existing only at low temperatures ($\lesssim 25 K$) is observed experimentally and analyzed theoretically in electrical Hanle effect measurement. It stems from spin-dependent scattering of electrons by neutral impurities in Si:P. The shape of this signal is not directly related to spin relaxation but to exchange interaction between spin-polarized electrons that are localized on adjacent impurities.
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Submitted 18 March, 2014;
originally announced March 2014.
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Large enhancement in the generation efficiency of pure spin currents in Ge using Heusler-compound Co_2FeSi electrodes
Authors:
K. Kasahara,
Y. Fujita,
S. Yamada,
K. Sawano,
M. Miyao,
K. Hamaya
Abstract:
We show nonlocal spin transport in n-Ge based lateral spin-valve devices with highly ordered Co_2FeSi/n^+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle-effect curves are demonstrated at low temperatures, indicating generation, manipulation, and detection of pure spin currents in n-Ge. The obtained spin generation efficiency of ~ 0.12 is about two orders of magnitude larger than t…
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We show nonlocal spin transport in n-Ge based lateral spin-valve devices with highly ordered Co_2FeSi/n^+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle-effect curves are demonstrated at low temperatures, indicating generation, manipulation, and detection of pure spin currents in n-Ge. The obtained spin generation efficiency of ~ 0.12 is about two orders of magnitude larger than that for a device with Fe/MgO tunnel-barrier contacts reported previously. Taking the spin related behavior with temperature evolution into account, we infer that it is necessary to simultaneously demonstrate the high spin generation efficiency and improve the quality of the transport channel for achieving Ge based spintronic devices.
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Submitted 26 November, 2013;
originally announced November 2013.
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Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon
Authors:
Y. Ando,
S. Yamada,
K. Kasahara,
K. Sawano,
M. Miyao,
K. Hamaya
Abstract:
We show a marked effect of the magnetic domain structure in an epitaxial CoFe contact on the spin accumulation signals in Si detected by three-terminal Hanle-effect measurements. Clear reduction in the spin accumulation signals can be seen by introducing the domain walls in the CoFe contact, caused by the lateral spin transport in the Si channel. The domain walls in the CoFe contact largely affect…
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We show a marked effect of the magnetic domain structure in an epitaxial CoFe contact on the spin accumulation signals in Si detected by three-terminal Hanle-effect measurements. Clear reduction in the spin accumulation signals can be seen by introducing the domain walls in the CoFe contact, caused by the lateral spin transport in the Si channel. The domain walls in the CoFe contact largely affect the spin lifetime and bias-current dependence of the spin signals. These results indicate that the estimation of the spin related properties without considering the domain structure in the contact causes non-negligible errors in the three-terminal Hanle-effect measurements.
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Submitted 1 October, 2012;
originally announced October 2012.
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Evidence for the Presence of Spin Accumulation in Localized States at Ferromagnet-Silicon Interfaces
Authors:
Y. Ando,
S. Yamada,
K. Kasahara,
K. Masaki,
K. Sawano,
M. Miyao,
K. Hamaya
Abstract:
We experimentally show evidence for the presence of spin accumulation in localized states at ferromagnet-silicon interfaces, detected by electrical Hanle effect measurements in CoFe/$n^{+}$-Si/$n$-Si lateral devices. By controlling the measurement temperature, we can clearly observe marked changes in the spin-accumulation signals at low temperatures, at which the electron transport across the inte…
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We experimentally show evidence for the presence of spin accumulation in localized states at ferromagnet-silicon interfaces, detected by electrical Hanle effect measurements in CoFe/$n^{+}$-Si/$n$-Si lateral devices. By controlling the measurement temperature, we can clearly observe marked changes in the spin-accumulation signals at low temperatures, at which the electron transport across the interface changes from the direct tunneling to the two-step one via the localized states. We discuss in detail the difference in the spin accumulation between in the Si channel and in the localized states.
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Submitted 4 July, 2012;
originally announced July 2012.
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Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel
Authors:
Y. Ando,
K. Kasahara,
S. Yamada,
Y. Maeda,
K. Masaki,
Y. Hoshi,
K. Sawano,
M. Miyao,
K. Hamaya
Abstract:
We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the temperature-dependent spin signals between spin-extraction and spin-injection conditions. In a spin-injection condition with a low bias current, the magnitude of spin sign…
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We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the temperature-dependent spin signals between spin-extraction and spin-injection conditions. In a spin-injection condition with a low bias current, the magnitude of spin signals can be enhanced despite the rise of temperature. For the interpretation of the temperature-dependent spin signals, it is important to consider the sensitivity of the spin detection at the Schottky-tunnel-barrier contact in addition to the spin diffusion in Si.
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Submitted 28 January, 2012;
originally announced January 2012.
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Electric-field control of spin accumulation signals in silicon at room temperature
Authors:
Y. Ando,
Y. Maeda,
K. Kasahara,
S. Yamada,
K. Masaki,
Y. Hoshi,
K. Sawano,
K. Izunome,
A. Sakai,
M. Miyao,
K. Hamaya
Abstract:
We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/$n^{+}$-Si contact at room temperature. Under the application of a back-gate voltage, we clearly observe the three-terminal Hanle-effect signal, i.e., spin-accumulation signal. The magnitude of the spin-accumulation signals can be red…
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We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/$n^{+}$-Si contact at room temperature. Under the application of a back-gate voltage, we clearly observe the three-terminal Hanle-effect signal, i.e., spin-accumulation signal. The magnitude of the spin-accumulation signals can be reduced with increasing the gate voltage. We consider that the gate controlled spin signals are attributed to the change in the carrier density in the Si channel beneath the CoFe/$n^{+}$-Si contact. This study is not only a technological jump for Si-based spintronic applications with gate structures but also reliable evidence for the spin injection into the semiconducting Si channel at room temperature.
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Submitted 24 August, 2011;
originally announced August 2011.
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Mechanism of Fermi Level Pinning at Metal/Germanium Interfaces
Authors:
K. Kasahara,
S. Yamada,
K. Sawano,
M. Miyao,
K. Hamaya
Abstract:
The physical origin of Fermi level pinning (FLP) at metal/Ge interfaces has been argued over a long period. Using the Fe$_{3}$Si/Ge(111) heterostructure developed originally, we can explore electrical transport properties through atomically matched metal/Ge junctions. Unlike the conventional metal/$p$-Ge junctions reported so far, we clearly observe rectifying current-voltage characteristics with…
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The physical origin of Fermi level pinning (FLP) at metal/Ge interfaces has been argued over a long period. Using the Fe$_{3}$Si/Ge(111) heterostructure developed originally, we can explore electrical transport properties through atomically matched metal/Ge junctions. Unlike the conventional metal/$p$-Ge junctions reported so far, we clearly observe rectifying current-voltage characteristics with a measurable Schottky barrier height, depending on the contact area of the Fe$_{3}$Si/Ge(111) junction. These results indicate that one should distinguish between intrinsic and extrinsic mechanisms for discussing the formation of the Schottky barrier at metal/Ge interfaces. This study will be developed for understanding FLP for almost all the metal/semiconductor interfaces.
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Submitted 18 August, 2011;
originally announced August 2011.
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Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts
Authors:
K. Kasahara,
Y. Baba,
K. Yamane,
Y. Ando,
S. Yamada,
Y. Hoshi,
K. Sawano,
M. Miyao,
K. Hamaya
Abstract:
Using high-quality Fe$_{3}$Si/$n^{+}$-Ge Schottky-tunnel-barrier contacts, we study spin accumulation in an $n$-type germanium ($n$-Ge) channel. In the three- or two-terminal voltage measurements with low bias current conditions at 50 K, Hanle-effect signals are clearly detected only at a forward-biased contact. These are reliable evidence for electrical detection of the spin accumulation created…
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Using high-quality Fe$_{3}$Si/$n^{+}$-Ge Schottky-tunnel-barrier contacts, we study spin accumulation in an $n$-type germanium ($n$-Ge) channel. In the three- or two-terminal voltage measurements with low bias current conditions at 50 K, Hanle-effect signals are clearly detected only at a forward-biased contact. These are reliable evidence for electrical detection of the spin accumulation created in the $n$-Ge channel. The estimated spin lifetime in $n$-Ge at 50 K is one order of magnitude shorter than those in $n$-Si reported recently. The magnitude of the spin signals cannot be explained by the commonly used spin diffusion model. We discuss a possible origin of the difference between experimental data and theoretical values.
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Submitted 18 October, 2011; v1 submitted 5 May, 2011;
originally announced May 2011.
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Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact
Authors:
Y. Ando,
K. Kasahara,
K. Yamane,
Y. Baba,
Y. Maeda,
Y. Hoshi,
K. Sawano,
M. Miyao,
K. Hamaya
Abstract:
We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si channel and a high-quality Schottky tunnel contact. In a low current-bias region, the Hanle-effect curves are observed only under forward bias conditions. This can be…
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We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si channel and a high-quality Schottky tunnel contact. In a low current-bias region, the Hanle-effect curves are observed only under forward bias conditions. This can be considered that the electrical detectability of the forward-biased contact is higher than that of the reverse-biased contact. This is possible evidence for the detection of spin-polarized electrons created in a Si channel.
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Submitted 18 July, 2011; v1 submitted 13 April, 2011;
originally announced April 2011.
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Electrical injection and detection of spin-polarized electrons in silicon through an Fe_3Si/Si Schottky tunnel barrier
Authors:
Y. Ando,
K. Hamaya,
K. Kasahara,
Y. Kishi,
K. Ueda,
K. Sawano,
T. Sadoh,
M. Miyao
Abstract:
We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the interface between a ferromagnetic Fe_3Si/Si contact and a Si channel (~ 10^15 cm^-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias char…
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We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the interface between a ferromagnetic Fe_3Si/Si contact and a Si channel (~ 10^15 cm^-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe_3Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe_3Si/Si contacts, we detect nonlocal output signals which originate from the spin accumulation in a Si channel at low temperatures.
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Submitted 6 May, 2009; v1 submitted 20 April, 2009;
originally announced April 2009.
