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Polarization spontaneous and piezo: fundamentals and their implementation in ab initio calculations
Authors:
Pawel Strak,
Pawel Kempisty,
Konrad Sakowski,
Jacek Piechota,
Izabella Grzegory,
Eva Monroy,
Agata Kaminska,
Stanislaw Krukowski
Abstract:
Fundamental properties of spontaneous and piezo polarization are reformulated and critically reviewed. It was demonstrated that Landau definition of polarization as a dipole density could be used to the infinite systems. The difference between the bulk polarization and surface polarity are distinguished thus creating clear identification of both components. The local model of spontaneous polarizat…
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Fundamental properties of spontaneous and piezo polarization are reformulated and critically reviewed. It was demonstrated that Landau definition of polarization as a dipole density could be used to the infinite systems. The difference between the bulk polarization and surface polarity are distinguished thus creating clear identification of both components. The local model of spontaneous polarization was created and used to calculate spontaneous polarization as the electric dipole density. It was shown that the proposed local model correctly predicts c-axis spontaneous polarization values of the nitride wurtzite semiconductors. It was also shown that the proposed model predicts zero polarization in the plane perpendicular to the c-axis, in accordance with symmetry requirements. In addition, the model results are in accordance with polarization equal to zero for zinc blende lattice. These data confirm the basic correctness of the proposed model. The spontaneous polarization values obtained for all wurtzite III nitrides (BN, AlN, GaN and InN) are in basic agreement with the earlier calculations using Berry phase and slab models of Bernardini et al. {Bernardini et al. Phys Rev B 56 (2001) R10024 & 63 (2001) 193201} but not with Dreyer et al. {Dreyer et al. Phys. Rev X 6 (2016) 021038}. Wurtzite nitride superlattices ab initio calculations were performed to derive polarization-induced fields in the coherently strained lattices showing good agreement with the polarization values. The strained superlattice data were used to determine the piezoelectric parameters of wurtzite nitrides obtaining the values that were in basic agreement with the earlier data. Zinc blende superlattices were also modeled using ab initio calculations showing results that are in agreement with the absence of polarization of all nitrides in zinc blende symmetry.
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Submitted 1 July, 2024;
originally announced July 2024.
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Isotope substitution and polytype control for point defects identification: the case of the ultraviolet color center in hexagonal boron nitride
Authors:
J. Plo,
A. Pershin,
S. Li,
T. Poirier,
E. Janzen,
H. Schutte,
M. Tian,
M. Wynn,
S. Bernard,
A. Rousseau,
A. Ibanez,
P. Valvin,
W. Desrat,
T. Michel,
V. Jacques,
B. Gil,
A. Kaminska,
N. Wan,
J. H. Edgar,
A. Gali,
G. Cassabois
Abstract:
Defects in crystals can have a transformative effect on the properties and functionalities of solid-state systems. Dopants in semiconductors are core components in electronic and optoelectronic devices. The control of single color centers is at the basis of advanced applications for quantum technologies. Unintentional defects can also be detrimental to the crystalline structure and hinder the deve…
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Defects in crystals can have a transformative effect on the properties and functionalities of solid-state systems. Dopants in semiconductors are core components in electronic and optoelectronic devices. The control of single color centers is at the basis of advanced applications for quantum technologies. Unintentional defects can also be detrimental to the crystalline structure and hinder the development of novel materials. Whatever the research perspective, the identification of defects is a key but complicated, and often long-standing issue. Here, we present a general methodology to identify point defects by combining isotope substitution and polytype control, with a systematic comparison between experiments and first-principles calculations. We apply this methodology to hexagonal boron nitride (hBN) and its ubiquitous color center emitting in the ultraviolet spectral range. From isotopic purification of the host hBN matrix, a local vibrational mode of the defect is uncovered, and isotope-selective carbon doping proves that this mode belongs to a carbon-based center. Then, by varying the stacking sequence of the host hBN matrix, we unveil different optical responses to hydrostatic pressure for the non-equivalent configurations of this ultraviolet color center. We conclude that this defect is a carbon dimer in the honeycomb lattice of hBN. Our results show that tuning the stacking sequence in different polytypes of a given crystal provides unique fingerprints contributing to the identification of defects in 2D materials.
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Submitted 31 May, 2024;
originally announced May 2024.
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Pressure-dependent bandgap study of MBE grown {CdO/MgO} short period SLs using diamond anvil cell
Authors:
Abinash Adhikari,
Pawel Strak,
Piotr Dluzewski,
Agata Kaminska,
Ewa Przezdziecka
Abstract:
Semiconductor superlattices have found widespread applications in electronic industries. In this work, short-period superlattice structure (SLs) composed of CdO and MgO layers was grown using the plasma-assisted molecular beam epitaxy (PA-MBE) technique. The optical property of the SLs was investigated by absorption measurement at room temperature. The ambient-pressure direct bandgap was found to…
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Semiconductor superlattices have found widespread applications in electronic industries. In this work, short-period superlattice structure (SLs) composed of CdO and MgO layers was grown using the plasma-assisted molecular beam epitaxy (PA-MBE) technique. The optical property of the SLs was investigated by absorption measurement at room temperature. The ambient-pressure direct bandgap was found to be 2.76 eV. The pressure dependence of fundamental bandgap has been studied using a diamond anvil cell (DAC) technique. It has been found that the band-to-band transition shifts toward higher energy with applied pressure. The bandgap of SLs was varied from 2.76 eV to 2.87 eV with applied pressure varied from 0 to 5.9 GPa. The pressure coefficient for the direct bandgap of SLs was found to be 26 meV/GPa. The obtained experimental result was supported by theoretical results obtained using DFT calculations. The volume deformation potential was estimated using the empirical rule. We believe our findings may provide valuable insight for a better understanding of {CdO/MgO} SLs towards their future applications in optoelectronics.
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Submitted 13 February, 2024;
originally announced February 2024.
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Coulomb contribution to Shockley-Read-Hall (SRH) recombination
Authors:
Konrad Sakowski,
Pawel Strak,
Pawel Kempisty,
Jacek Piechota,
Izabella Grzegory,
Piotr Perlin,
Eva Monroy,
Agata Kaminska,
Stanislaw Krukowski
Abstract:
Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination is reformulated. The introduced model considers Coulomb attraction between charged deep defect and the approaching free carrier, showing that this effect may cause considerable increase of the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates.…
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Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination is reformulated. The introduced model considers Coulomb attraction between charged deep defect and the approaching free carrier, showing that this effect may cause considerable increase of the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates. It is demonstrated that in the typical semiconductor device or semiconductor medium, the SRH recombination cannot be neglected at low temperatures. The SRH is more effective in the case of low doped semiconductors. Effective screening by mobile carrier density could reduce the effect, leading to SRH rate increase.
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Submitted 26 January, 2024; v1 submitted 18 October, 2023;
originally announced October 2023.
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Polarization doping ab initio verification of the concept charge conservation and nonlocality
Authors:
Ashfaq Ahmad,
Pawel Strak,
Pawel Kempisty,
Konrad Sakowski,
Jacek Piechota,
Yoshihiro Kangawa,
Izabella Grzegory,
Michal Leszczynski,
Zbigniew R. Zytkiewicz,
Grzegorz Muziol,
Eva Monroy,
Stanislaw Krukowski,
Agata Kaminska
Abstract:
In this work, we study the emergence of polarization doping in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation law applies for fixed and mobile charges separately, leading to nonlocal compensation phenomena involving bulk fixed and mobile charge and polarization sheet charge at the heterointerfaces. The magnitude of the effect allo…
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In this work, we study the emergence of polarization doping in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation law applies for fixed and mobile charges separately, leading to nonlocal compensation phenomena involving bulk fixed and mobile charge and polarization sheet charge at the heterointerfaces. The magnitude of the effect allows obtaining technically viable mobile charge density for optoelectronic devices without impurity doping (donors or acceptors). Therefore, it provides an additional tool for the device designer, with the potential to attain high conductivities: high carrier concentrations can be obtained even in materials with high dopant ionization energies, and the mobility is not limited by scattering at ionized impurities.
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Submitted 22 March, 2022; v1 submitted 2 June, 2021;
originally announced June 2021.
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Ballistic Lévy walk with rests: Escape from a bounded domain
Authors:
A. Kamińska,
T. Srokowski
Abstract:
The Lévy walk process for the lower interval of the time of flight distribution ($α<1$) and with finite resting time between consecutive flights is discussed. The motion is restricted to a region bounded by two absorbing barriers and the escape process is analysed. By means of a Poisson equation, the total density, which includes both flying and resting phase, is derived and the first passage time…
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The Lévy walk process for the lower interval of the time of flight distribution ($α<1$) and with finite resting time between consecutive flights is discussed. The motion is restricted to a region bounded by two absorbing barriers and the escape process is analysed. By means of a Poisson equation, the total density, which includes both flying and resting phase, is derived and the first passage time properties determined: the mean first passage time appears proportional to the barrier position; moreover, the dependence of that quantity on $α$ is established. Two limits emerge from the model: of short waiting time, that corresponds to Lévy walks without rests, and long waiting time which exhibits properties of a Lévy flights model. The similar quantities are derived for the case of a position-dependent waiting time. Then the mean first passage time rises with barrier position faster than for Lévy flights model. The analytical results are compared with Monte Carlo trajectory simulations.
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Submitted 21 September, 2019;
originally announced September 2019.
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Spontaneous emission of color centers at 4eV in hexagonal boron nitride under hydrostatic pressure
Authors:
Kamil Koronski,
Agata Kaminska,
Nikolai D. Zhigadlo,
Christine Elias,
Guillaume Cassabois,
Bernard Gil
Abstract:
The light emission properties of color centers emitting in 3.3-4 eV region are investigated for hydrostatic pressures ranging up to 5GPa at liquid helium temperature. The light emission energy decreases with pressure less sensitively than the bandgap. This behavior at variance from the shift of the bandgap is typical of deep traps. Interestingly, hydrostatic pressure reveals the existence of level…
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The light emission properties of color centers emitting in 3.3-4 eV region are investigated for hydrostatic pressures ranging up to 5GPa at liquid helium temperature. The light emission energy decreases with pressure less sensitively than the bandgap. This behavior at variance from the shift of the bandgap is typical of deep traps. Interestingly, hydrostatic pressure reveals the existence of levels that vary differently under pressure (smaller increase of the emission wavelength compared to the rest of the levels in this energy region or even decrease of it) with pressure. This discovery enriches the physics of the color centers operating in the UV in hBN.
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Submitted 20 May, 2019;
originally announced May 2019.
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Levy walks with variable waiting time: a ballistic case
Authors:
A. Kamińska,
T. Srokowski
Abstract:
The Lévy walk process for a lower interval of an excursion times distribution ($α<1$) is discussed. The particle rests between the jumps and the waiting time is position-dependent. Two cases are considered: a rising and diminishing waiting time rate $ν(x)$, which require different approximations of the master equation. The process comprises two phases of the motion: particles at rest and in flight…
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The Lévy walk process for a lower interval of an excursion times distribution ($α<1$) is discussed. The particle rests between the jumps and the waiting time is position-dependent. Two cases are considered: a rising and diminishing waiting time rate $ν(x)$, which require different approximations of the master equation. The process comprises two phases of the motion: particles at rest and in flight. The density distributions for them are derived, as a solution of corresponding fractional equations. For strongly falling $ν(x)$, the resting particles density assumes the $α$-stable form (truncated at fronts), and the process resolves itself to the Lévy flights. The diffusion is enhanced for this case but no longer ballistic, in contrast to the case for the rising $ν(x)$. The analytical results are compared with Monte Carlo trajectory simulations. The results qualitatively agree with observed properties of human and animal movements.
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Submitted 22 June, 2018;
originally announced June 2018.
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Lévy walks in nonhomogeneous environments
Authors:
A. Kamińska,
T. Srokowski
Abstract:
The Lévy walk process with rests is discussed. The jumping time is governed by an $α$-stable distribution with $α>1$ while a waiting time distribution is Poissonian and involves a position-dependent rate which reflects a nonhomogeneous trap distribution. The master equation is derived and solved in the asymptotic limit for a power-law form of the jumping rate. The relative density of resting and f…
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The Lévy walk process with rests is discussed. The jumping time is governed by an $α$-stable distribution with $α>1$ while a waiting time distribution is Poissonian and involves a position-dependent rate which reflects a nonhomogeneous trap distribution. The master equation is derived and solved in the asymptotic limit for a power-law form of the jumping rate. The relative density of resting and flying particles appears time-dependent and the asymptotic form of both distribution obey a stretched-exponential shape at large time. The diffusion properties are discussed and it is demonstrated that, due to the heterogeneous trap structure, the enhanced diffusion, observed for the homogeneous case, may turn to a subdiffusion. The density distributions and mean squared displacements are also evaluated from Monte Carlo simulations of individual trajectories.
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Submitted 14 September, 2017;
originally announced September 2017.
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All-wurtzite (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy
Authors:
Aloyzas Siusys,
Janusz Sadowski,
Maciej Sawicki,
Slawomir Kret,
Tomasz Wojciechowski,
Katarzyna Gas,
Wojciech Szuszkiewicz,
Agnieszka Kaminska,
Tomasz Story
Abstract:
Structural and magnetic properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy on GaAs(111)B substrate with gold catalyst have been investigated.(In,Ga)As core nanowires were grown at high temperature (500 °C) whereas (Ga,Mn)As shells were deposited on the {1-100} side facets of the cores at much lower temperature (220 °C). High resolution transmission electron micr…
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Structural and magnetic properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy on GaAs(111)B substrate with gold catalyst have been investigated.(In,Ga)As core nanowires were grown at high temperature (500 °C) whereas (Ga,Mn)As shells were deposited on the {1-100} side facets of the cores at much lower temperature (220 °C). High resolution transmission electron microscopy images and high spectral resolution Raman scattering data show that both the cores and the shells of the nanowires have wurtzite crystalline structure. Scanning and transmission electron microscopy observations show smooth (Ga,Mn)As shells containing 5% of Mn epitaxially deposited on (In,Ga)As cores containing about 10% of In, without any misfit dislocations at the core-shell interface. With the In content in the (In,Ga)As cores larger than 5% the (In,Ga)As lattice parameter is higher than that of (Ga,Mn)As and the shell is in the tensile strain state. Elaborated magnetic studies indicate the presence of ferromagnetic coupling in (Ga,Mn)As shells at the temperatures in excess of 33 K. This coupling is maintained only in separated mesoscopic volumes resulting in an overall superparamagnetic behavior which gets blocked below ~17 K.
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Submitted 9 September, 2014;
originally announced September 2014.
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Lattice parameters and stability of the spinel compounds in relation to the ionic radii and electronegativities of constituting chemical elements
Authors:
M. G. Brik,
A. Suchocki,
A. Kamińska
Abstract:
A thorough consideration of the relation between the lattice parameters of 185 binary and ternary spinel compounds, on one side, and ionic radii and electronegativities of the constituting ions, on the other side, allowed for establishing a simple empirical model and finding its linear equation, which links together the above-mentioned quantities. The derived equation gives good agreement between…
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A thorough consideration of the relation between the lattice parameters of 185 binary and ternary spinel compounds, on one side, and ionic radii and electronegativities of the constituting ions, on the other side, allowed for establishing a simple empirical model and finding its linear equation, which links together the above-mentioned quantities. The derived equation gives good agreement between the experimental and modeled values of the lattice parameters in the considered group of spinels, with an average relative error of about 1% only. The proposed model was improved further by separate consideration of several groups of spinels, depending on the nature of the anion (oxygen, sulfur, selenium/tellurium, nitrogen). The developed approach can be efficiently used for prediction of lattice constants for new isostructural materials. In particular, the lattice constants of new hypothetic spinels ZnRE2O4, CdRE2S4, CdRE2Se4 (RE=rare earth elements) are predicted in the present paper. In addition, the upper and lower limits for the variation of the ionic radii, electronegativities and certain their combinations were established, which can be considered as stability criteria for the spinel compounds. The findings of the present paper offer a systematic overview of the structural properties of spinels and can serve as helpful guides for synthesis of new spinel compounds.
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Submitted 17 April, 2014; v1 submitted 26 January, 2014;
originally announced January 2014.
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Mean first passage time for a Markovian jumping process
Authors:
A. Kamińska,
T. Srokowski
Abstract:
We consider a Markovian jumping process with two absorbing barriers, for which the waiting-time distribution involves a position-dependent coefficient. We solve the Fokker-Planck equation with boundary conditions and calculate the mean first passage time (MFPT) which appears always finite, also for the subdiffusive case. Then, for the case of the jumping-size distribution in form of the Lévy dis…
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We consider a Markovian jumping process with two absorbing barriers, for which the waiting-time distribution involves a position-dependent coefficient. We solve the Fokker-Planck equation with boundary conditions and calculate the mean first passage time (MFPT) which appears always finite, also for the subdiffusive case. Then, for the case of the jumping-size distribution in form of the Lévy distribution, we determine the probability density distributions and MFPT by means of numerical simulations. Dependence of the results on process parameters, as well as on the Lévy distribution width, is discussed.
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Submitted 15 October, 2007;
originally announced October 2007.
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Diffusion equations for a Markovian jumping process
Authors:
T. Srokowski,
A. Kaminska
Abstract:
We consider a Markovian jumping process which is defined in terms of the jump-size distribution and the waiting-time distribution with a position-dependent frequency, in the diffusion limit. We assume the power-law form for the frequency. For small steps, we derive the Fokker-Planck equation and show the presence of the normal diffusion, subdiffusion and superdiffusion. For the Lévy distribution…
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We consider a Markovian jumping process which is defined in terms of the jump-size distribution and the waiting-time distribution with a position-dependent frequency, in the diffusion limit. We assume the power-law form for the frequency. For small steps, we derive the Fokker-Planck equation and show the presence of the normal diffusion, subdiffusion and superdiffusion. For the Lévy distribution of the step-size, we construct a fractional equation, which possesses a variable coefficient, and solve it in the diffusion limit. Then we calculate fractional moments and define fractional diffusion coefficient as a natural extension to the cases with the divergent variance. We also solve the master equation numerically and demonstrate that there are deviations from the Lévy stable distribution for large wave numbers.
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Submitted 28 April, 2006;
originally announced April 2006.
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Stochastic equation for a jumping process with long-time correlations
Authors:
T. Srokowski,
A. Kaminska
Abstract:
A jumping process, defined in terms of jump size distribution and waiting time distribution, is presented. The jumping rate depends on the process value. The process, which is Markovian and stationary, relaxes to an equilibrium and is characterized by the power-law autocorrelation function. Therefore, it can serve as a model of the 1/f noise as well as a model of the stochastic force in the gene…
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A jumping process, defined in terms of jump size distribution and waiting time distribution, is presented. The jumping rate depends on the process value. The process, which is Markovian and stationary, relaxes to an equilibrium and is characterized by the power-law autocorrelation function. Therefore, it can serve as a model of the 1/f noise as well as a model of the stochastic force in the generalized Langevin equation. This equation is solved for the noise correlations 1/t; the resulting velocity distribution has sharply falling tails. The system preserves the memory about the initial condition for a very long time.
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Submitted 12 May, 2004;
originally announced May 2004.
