Showing 1–23 of 23 results for author: Gao, R

Extremely long transverse optical needle focus for reflective metalens enabled by monolayer MoS$_2$

Authors: Zhonglin Li, Kangyu Gao, Yingying Wang, Ruitong Bie, Dongliang Yang, Tianze Yu, Renxi Gao, Wenjun Liu, Bo Zhong, Linfeng Sun

Abstract: Line-scan mode facilitates fast-speed and high-throughput imaging with developing a suitable optical transverse needle focus. Metasurface with periodic structures such as diffractive rings, ellipses, and gratings could enable discrete focus evolving into line focus under momentum conservation, but still face the challenge of extremely low light power utilization brought by inevitably multiple high… ▽ More Line-scan mode facilitates fast-speed and high-throughput imaging with developing a suitable optical transverse needle focus. Metasurface with periodic structures such as diffractive rings, ellipses, and gratings could enable discrete focus evolving into line focus under momentum conservation, but still face the challenge of extremely low light power utilization brought by inevitably multiple high-order diffractions. In addition, the designed focus requires the selection of particular optical functional materials. High dielectric constants in atomic transition metal dichalcogenides make significant phase modulation by bringing phase singularity at zero-reflection possible. However, no light power is available for use at zero-reflection and a balance between phase and amplitude modulation is needed. In this work, above issues are simultaneously solved by designing a monolayer MoS2 based Fresnel strip structure. An optical needle primary focus with a transverse length of 40 μm (~80 λ) is obtained, which is the longest value recorded so far, together with a sub-diffraction-limited lateral spot and a broad working wavelength range. This specially developed structure not only concentrates light power in primary diffraction by breaking restriction of momentum conservation, but also guarantees a consistent phase across different strips. The novel optical manipulation way provided here together with the longer focus length for flat optics will show promising applications in biology, oncology, nanofabrication, energy harvesting, and optical information processing. △ Less

Submitted 11 May, 2024; originally announced May 2024.

Comments: 22 pages, 5 figures

Light-induced giant enhancement of nonreciprocal transport at KTaO3-based interfaces

Authors: Xu Zhang, Tongshuai Zhu, Shuai Zhang, Zhongqiang Chen, Anke Song, Chong Zhang, Rongzheng Gao, Wei Niu, Yequan Chen, Fucong Fei, Yilin Tai, Guoan Li, Binghui Ge, Wenkai Lou, Jie Shen, Haijun Zhang, Kai Chang, Fengqi Song, Rong Zhang, Xuefeng Wang

Abstract: Nonlinear transport is a unique functionality of noncentrosymmetric systems, which reflects profound physics, such as spin-orbit interaction, superconductivity and band geometry. However, it remains highly challenging to enhance the nonreciprocal transport for promising rectification devices. Here, we observe a light-induced giant enhancement of nonreciprocal transport at the superconducting and e… ▽ More Nonlinear transport is a unique functionality of noncentrosymmetric systems, which reflects profound physics, such as spin-orbit interaction, superconductivity and band geometry. However, it remains highly challenging to enhance the nonreciprocal transport for promising rectification devices. Here, we observe a light-induced giant enhancement of nonreciprocal transport at the superconducting and epitaxial CaZrO3/KTaO3 (111) interfaces. The nonreciprocal transport coefficient undergoes a giant increase with three orders of magnitude up to 105 A-1T-1. Furthermore, a strong Rashba spin-orbit coupling effective field of 14.7 T is achieved with abundant high-mobility photocarriers under ultraviolet illumination, which accounts for the giant enhancement of nonreciprocal transport coefficient. Our first-principles calculations further disclose the stronger Rashba spin-orbit coupling strength and the longer relaxation time in the photocarrier excitation process, bridging the light-property quantitative relationship. Our work provides an alternative pathway to boost nonreciprocal transport in noncentrosymmetric systems and facilitates the promising applications in opto-rectification devices and spin-orbitronic devices. △ Less

Submitted 7 March, 2024; originally announced March 2024.

Comments: 38 pages, 17 figures

Journal ref: Nature Communications (2024)

Is La3Ni2O6.5 a Bulk Superconducting Nickelate?

Authors: Ran Gao, Lun Jin, Shuyuan Huyan, Danrui Ni, Haozhe Wang, Xianghan Xu, Sergey L. Budko, Paul Canfield, Weiwei Xie, Robert J. Cava

Abstract: Superconducting states onsetting at moderately high temperatures have been observed in epitaxially-stabilized RENiO2-based thin films. However, recently it has also been reported that superconductivity at high temperatures is observed in bulk La3Ni2O7-δ at high pressure, opening further possibilities for study. Here we report the reduction profile of La3Ni2O7 in a stream of 5% H2/Ar gas and the is… ▽ More Superconducting states onsetting at moderately high temperatures have been observed in epitaxially-stabilized RENiO2-based thin films. However, recently it has also been reported that superconductivity at high temperatures is observed in bulk La3Ni2O7-δ at high pressure, opening further possibilities for study. Here we report the reduction profile of La3Ni2O7 in a stream of 5% H2/Ar gas and the isolation of the metastable intermediate phase La3Ni2O6.45, which is based on Ni2+. Although this reduced phase does not superconduct at ambient or high pressures, it offers insights into the Ni-327 system and encourages the future study of nickelates as a function of oxygen content. △ Less

Submitted 18 November, 2023; originally announced November 2023.

Unraveling the role of disorderness in superconducting materials on qubit coherence

Authors: Ran Gao, Feng Wu, Hantao Sun, Jianjun Chen, Hao Deng, Xizheng Ma, Xiaohe Miao, Zhijun Song, Xin Wan, Fei Wang, Tian Xia, Make Ying, Chao Zhang, Yaoyun Shi, Hui-Hai Zhao, Chunqing Deng

Abstract: Introducing disorderness in the superconducting materials has been considered promising to enhance the electromagnetic impedance and realize noise-resilient superconducting qubits. Despite a number of pioneering implementations, the understanding of the correlation between the material disorderness and the qubit coherence is still developing. Here, we demonstrate the first and a systematic charact… ▽ More Introducing disorderness in the superconducting materials has been considered promising to enhance the electromagnetic impedance and realize noise-resilient superconducting qubits. Despite a number of pioneering implementations, the understanding of the correlation between the material disorderness and the qubit coherence is still developing. Here, we demonstrate the first and a systematic characterization of fluxonium qubits with the superinductors made from titanium-aluminum-nitride with varied disorderness. From qubit noise spectroscopy, the flux noise and the dielectric loss are extracted as a measure of the coherence properties. Our results reveal that the $1/f$ flux noise dominates the qubit decoherence around the flux-frustration point, strongly correlated with the material disorderness; while the dielectric loss remains low under a wide range of material properties. From the flux-noise amplitudes, the areal density ($σ$) of the phenomenological spin defects and material disorderness are found to be approximately correlated by $σ\propto ρ_{xx}^3$, or effectively $(k_F l)^{-3}$. This work has provided new insights on the origin of decoherence channels within superconductors, and could serve as a useful guideline for material design and optimization. △ Less

Submitted 22 November, 2023; v1 submitted 10 October, 2023; originally announced October 2023.

Dissipative time crystal in a strongly interacting Rydberg gas

Authors: Xiaoling Wu, Zhuqing Wang, Fan Yang, Ruochen Gao, Chao Liang, Meng Khoon Tey, Xiangliang Li, Thomas Pohl, Li You

Abstract: The notion of spontaneous symmetry breaking has been well established to characterize classical and quantum phase transitions of matter, such as in condensation, crystallization or quantum magnetism. Generalizations of this paradigm to the time dimension can lead to a time crystal phase, which spontaneously breaks the time translation symmetry of the system. Whereas the existence of a continuous t… ▽ More The notion of spontaneous symmetry breaking has been well established to characterize classical and quantum phase transitions of matter, such as in condensation, crystallization or quantum magnetism. Generalizations of this paradigm to the time dimension can lead to a time crystal phase, which spontaneously breaks the time translation symmetry of the system. Whereas the existence of a continuous time crystal at equilibrium has been challenged by no-go theorems, this difficulty can be circumvented by dissipation in an open system. Here, we report the experimental observation of such dissipative time crystalline order in a room-temperature atomic gas, where ground-state atoms are continuously driven to Rydberg states. The emergent time crystal is revealed by persistent oscillations of the photon transmission, and we show that the observed limit cycles arise from the coexistence and competition between distinct Rydberg components. The nondecaying autocorrelation of the oscillation, together with the robustness against temporal noises, indicate the establishment of true long-range temporal order and demonstrates the realization of a continuous time crystal. △ Less

Submitted 4 July, 2024; v1 submitted 31 May, 2023; originally announced May 2023.

Comments: 14 pages, 4+6 figures

Journal ref: Nat. Phys. (2024)

Titanium Nitride Film on Sapphire Substrate with Low Dielectric Loss for Superconducting Qubits

Authors: Hao Deng, Zhijun Song, Ran Gao, Tian Xia, Feng Bao, Xun Jiang, Hsiang-Sheng Ku, Zhisheng Li, Xizheng Ma, Jin Qin, Hantao Sun, Chengchun Tang, Tenghui Wang, Feng Wu, Wenlong Yu, Gengyan Zhang, Xiaohang Zhang, Jingwei Zhou, Xing Zhu, Yaoyun Shi, Hui-Hai Zhao, Chunqing Deng

Abstract: Dielectric loss is one of the major decoherence sources of superconducting qubits. Contemporary high-coherence superconducting qubits are formed by material systems mostly consisting of superconducting films on substrate with low dielectric loss, where the loss mainly originates from the surfaces and interfaces. Among the multiple candidates for material systems, a combination of titanium nitride… ▽ More Dielectric loss is one of the major decoherence sources of superconducting qubits. Contemporary high-coherence superconducting qubits are formed by material systems mostly consisting of superconducting films on substrate with low dielectric loss, where the loss mainly originates from the surfaces and interfaces. Among the multiple candidates for material systems, a combination of titanium nitride (TiN) film and sapphire substrate has good potential because of its chemical stability against oxidization, and high quality at interfaces. In this work, we report a TiN film deposited onto sapphire substrate achieving low dielectric loss at the material interface. Through the systematic characterizations of a series of transmon qubits fabricated with identical batches of TiN base layers, but different geometries of qubit shunting capacitors with various participation ratios of the material interface, we quantitatively extract the loss tangent value at the substrate-metal interface smaller than $8.9 \times 10^{-4}$ in 1-nm disordered layer. By optimizing the interface participation ratio of the transmon qubit, we reproducibly achieve qubit lifetimes of up to 300 $μ$s and quality factors approaching 8 million. We demonstrate that TiN film on sapphire substrate is an ideal material system for high-coherence superconducting qubits. Our analyses further suggest that the interface dielectric loss around the Josephson junction part of the circuit could be the dominant limitation of lifetimes for state-of-the-art transmon qubits. △ Less

Submitted 6 May, 2022; originally announced May 2022.

Ultrahigh-inductance materials from spinodal decomposition

Authors: Ran Gao, Hsiang-Sheng Ku, Hao Deng, Wenlong Yu, Tian Xia, Feng Wu, Zhijun Song, Xiaohe Miao, Chao Zhang, Yue Lin, Yaoyun Shi, Hui-Hai Zhao, Chunqing Deng

Abstract: Disordered superconducting nitrides with kinetic inductance have long been considered a leading material candidate for high-inductance quantum-circuit applications. Despite continuing efforts in reducing material dimensions to increase the kinetic inductance and the corresponding circuit impedance, it becomes a fundamental challenge to improve further without compromising material qualities. To th… ▽ More Disordered superconducting nitrides with kinetic inductance have long been considered a leading material candidate for high-inductance quantum-circuit applications. Despite continuing efforts in reducing material dimensions to increase the kinetic inductance and the corresponding circuit impedance, it becomes a fundamental challenge to improve further without compromising material qualities. To this end, we propose a method to drastically increase the kinetic inductance of superconducting materials via spinodal decomposition while keeping a low microwave loss. We use epitaxial Ti\textsubscript{0.48}Al\textsubscript{0.52}N as a model system, and for the first time demonstrate the utilization of spinodal decomposition to trigger the insulator-to-superconductor transition with a drastically enhanced material disorder. The measured kinetic inductance has increased by 2-3 orders of magnitude compared with all the best reported disordered superconducting nitrides. Our work paves the way for substantially enhancing and deterministically controlling the inductance for advanced superconducting quantum circuits. △ Less

Submitted 22 November, 2023; v1 submitted 9 November, 2021; originally announced November 2021.

Epitaxial titanium nitride microwave resonators: Structural, chemical, electrical, and microwave properties

Authors: Ran Gao, Wenlong Yu, Hao Deng, Hsiang-Sheng Ku, Zhisheng Li, Minghua Wang, Xiaohe Miao, Yue Lin, Chunqing Deng

Abstract: Titanium nitride is an attractive material for a range of superconducting quantum-circuit applications owing to its low microwave losses, high surface inductance, and chemical stability. The physical properties and device performance, nevertheless, depend strongly on the quality of the materials. Here we focus on the highly crystalline and epitaxial titanium nitride thin films deposited on sapphir… ▽ More Titanium nitride is an attractive material for a range of superconducting quantum-circuit applications owing to its low microwave losses, high surface inductance, and chemical stability. The physical properties and device performance, nevertheless, depend strongly on the quality of the materials. Here we focus on the highly crystalline and epitaxial titanium nitride thin films deposited on sapphire substrates using magnetron sputtering at an intermediate temperature (300$^{\circ}$C). We perform a set of systematic and comprehensive material characterization to thoroughly understand the structural, chemical, and transport properties. Microwave losses at low temperatures are studied using patterned microwave resonators, where the best internal quality factor in the single-photon regime is measured to be $3.3\times 10^6$, and $> 1.0\times 10^7$ in the high-power regime. Adjusted with the material filling factor of the resonators, the microwave loss-tangent here compares well with the previously reported best values for superconducting resonators. This work lays the foundation of using epitaxial titanium nitride for low-loss superconducting quantum circuits. △ Less

Submitted 22 November, 2023; v1 submitted 7 November, 2021; originally announced November 2021.

Journal ref: Physical Review MATERIALS 6, 036202 (2022)

Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering

Authors: Guangnan Zhou, Fanming Zeng, Rongyu Gao, Qing Wang, Kai Cheng, Guangrui Xia, Hongyu Yu

Abstract: We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field across the gate. By employing an additional unintentionally doped GaN layer, the gate leakage current is suppressed and the gate breakdown voltage is boosted from 10.6 to 14.6 V with negligible influence on the threshold… ▽ More We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field across the gate. By employing an additional unintentionally doped GaN layer, the gate leakage current is suppressed and the gate breakdown voltage is boosted from 10.6 to 14.6 V with negligible influence on the threshold voltage and on-resistance. Time-dependent gate breakdown measurements reveal that the maximum gate drive voltage increases from 6.2 to 10.6 V for a 10-year lifetime with a 1% gate failure rate. This method effectively expands the operating voltage margin of the p-GaN gate HEMTs without any other additional process steps. △ Less

Submitted 2 June, 2021; originally announced June 2021.

UO2/BeO interfacial thermal resistance and its effect on fuel thermal conductivity

Authors: Xueyan Zhu, Rui Gao, Hengfeng Gong, Tong Liu, De-Ye Lin, Haifeng Song

Abstract: UO2/BeO interfacial thermal resistance (ITR) is calculated by diffuse mismatch model (DMM) and the effects of ITR on UO2-BeO thermal conductivity are investigated. ITR predicted by DMM is on the order of 10-9 m2K/W. Using this ITR, UO2-BeO thermal conductivities are calculated by theoretical models and compared with experimental data. The results indicate that DMM prediction is applicable to the i… ▽ More UO2/BeO interfacial thermal resistance (ITR) is calculated by diffuse mismatch model (DMM) and the effects of ITR on UO2-BeO thermal conductivity are investigated. ITR predicted by DMM is on the order of 10-9 m2K/W. Using this ITR, UO2-BeO thermal conductivities are calculated by theoretical models and compared with experimental data. The results indicate that DMM prediction is applicable to the interface between UO2 and dispersed BeO, while not applicable to the interface between UO2 and continuous BeO. If the thermal conductivity of UO2 containing continuous BeO was to be in agreement with experimental data, its ITR should be on the order of 10-6 - 10-5 m2K/W. Therefore, the vibrational mismatch between UO2 and BeO considered by DMM is the major mechanism for attenuating the heat flux through UO2/dispersed-BeO interface, but not for UO2/continuous-BeO interface. Furthermore, it is found that the presence of ITR leads to the dependence of the thermal conductivity of UO2 containing dispersed BeO on BeO size. With the decrease in BeO size, UO2-BeO thermal conductivity decreases. When BeO size is smaller than a critical value, UO2-BeO thermal conductivity becomes even smaller than UO2 thermal conductivity. For UO2 containing continuous BeO, the thermal conductivity decreases with the decrease in the size of UO2 granule surrounded by BeO, but not necessarily smaller than UO2 thermal conductivity. Under a critical temperature, UO2-BeO thermal conductivity is always larger than UO2 thermal conductivity. Above the critical temperature, UO2-BeO thermal conductivity is larger than UO2 thermal conductivity only when UO2 granule size is large enough. The conditions for achieving the targeted enhancement of UO2 thermal conductivity by doping with BeO are derived. These conditions can be used to design and optimize the distribution, content, size of BeO, and the size of UO2 granule. △ Less

Submitted 20 June, 2020; originally announced June 2020.

Journal ref: Annals of Nuclear Energy, Volume 154, May 2021, 108102

Negative compressibility in MoS2 capacitance

Authors: Ruiyan Gao, Zhehan Ying, Liheng An, Zefei Wu, Xiangbing Cai, Shi Wang, Ziqing Ye, Xuemeng Feng, Meizheng Huang, Ning Wang

Abstract: Large capacitance enhancement is useful for increasing the gate capacitance of field-effect transistors (FETs) to produce low-energy-consuming devices with improved gate controllability. We report strong capacitance enhancement effects in a newly emerged two-dimensional channel material, molybdenum disulfide (MoS2). The enhancement effects are due to strong electron-electron interaction at the low… ▽ More Large capacitance enhancement is useful for increasing the gate capacitance of field-effect transistors (FETs) to produce low-energy-consuming devices with improved gate controllability. We report strong capacitance enhancement effects in a newly emerged two-dimensional channel material, molybdenum disulfide (MoS2). The enhancement effects are due to strong electron-electron interaction at the low carrier density regime in MoS2. We achieve about 50% capacitance enhancement in monolayer devices and 10% capacitance enhancement in bilayer devices. However, the enhancement effect is not obvious in multilayer (layer number >3) devices. Using the Hartree-Fock approximation, we illustrate the same trend in our inverse compressibility data. △ Less

Submitted 3 February, 2020; originally announced February 2020.

Pursuing High-Temperature Quantum Anomalous Hall Effect in MnBi$_2$Te$_4$/Sb$_2$Te$_3$ Heterostructures

Authors: Shifei Qi, Ruiling Gao, Maozhi Chang, Yulei Han, Zhenhua Qiao

Abstract: Quantum anomalous Hall effect (QAHE) has been experimentally realized in magnetically-doped topological insulators or intrinsic magnetic topological insulator MnBi$_2$Te$_4$ by applying an external magnetic field. However, either the low observation temperature or the unexpected external magnetic field (tuning all MnBi$_2$Te$_4$ layers to be ferromagnetic) still hinders further application of QAHE… ▽ More Quantum anomalous Hall effect (QAHE) has been experimentally realized in magnetically-doped topological insulators or intrinsic magnetic topological insulator MnBi$_2$Te$_4$ by applying an external magnetic field. However, either the low observation temperature or the unexpected external magnetic field (tuning all MnBi$_2$Te$_4$ layers to be ferromagnetic) still hinders further application of QAHE. Here, we theoretically demonstrate that proper stacking of MnBi$_2$Te$_4$ and Sb$_2$Te$_3$ layers is able to produce intrinsically ferromagnetic van der Waals heterostructures to realize the high-temperature QAHE. We find that interlayer ferromagnetic transition can happen at $T_{\rm C}=42~\rm K$ when a five-quintuple-layer Sb$_2$Te$_3$ topological insulator is inserted into two septuple-layer MnBi$_2$Te$_4$ with interlayer antiferromagnetic coupling. Band structure and topological property calculations show that MnBi$_2$Te$_4$/Sb$_2$Te$_3$/MnBi$_2$Te$_4$ heterostructure exhibits a topologically nontrivial band gap around 26 meV, that hosts a QAHE with a Chern number of $\mathcal{C}=1$. In addition, our proposed materials system should be considered as an ideal platform to explore high-temperature QAHE due to the fact of natural charge-compensation, originating from the intrinsic n-type defects in MnBi$_2$Te$_4$ and p-type defects in Sb$_2$Te$_3$. △ Less

Submitted 27 November, 2019; v1 submitted 1 August, 2019; originally announced August 2019.

Journal ref: Phys. Rev. B 101, 014423 (2020)

Nonmagnetic-Doping Induced Quantum Anomalous Hall Effect in Topological Insulators

Authors: Shifei Qi, Ruiling Gao, Maozhi Chang, Tao Hou, Yulei Han, Zhenhua Qiao

Abstract: Quantum anomalous Hall effect (QAHE) has been experimentally observed in magnetically doped topological insulators. However, ultra-low temperature (usually below 300 mK), which is mainly attributed to inhomogeneous magnetic doping, becomes a daunting challenge for potential applications. Here, a \textit{nonmagnetic}-doping strategy is proposed to produce ferromagnetism and realize QAHE in topologi… ▽ More Quantum anomalous Hall effect (QAHE) has been experimentally observed in magnetically doped topological insulators. However, ultra-low temperature (usually below 300 mK), which is mainly attributed to inhomogeneous magnetic doping, becomes a daunting challenge for potential applications. Here, a \textit{nonmagnetic}-doping strategy is proposed to produce ferromagnetism and realize QAHE in topological insulators. We numerically demonstrated that magnetic moments can be induced by nitrogen or carbon substitution in Bi$_2$Se$_3$, Bi$_2$Te$_3$, and Sb$_2$Te$_3$, but only nitrogen-doped Sb$_2$Te$_3$ exhibits long-range ferromagnetism and preserve large bulk band gap. We further show that its corresponding thin-film can harbor QAHE at temperatures of 17-29 Kelvin, which is two orders of magnitude higher than the typical temperatures in similar systems. Our proposed \textit{nonmagnetic} doping scheme may shed new light in experimental realization of high-temperature QAHE in topological insulators. △ Less

Submitted 8 July, 2019; originally announced July 2019.

Journal ref: Phys. Rev. B 102, 085419 (2020)

More than 3-mm-long carrier diffusion and strong absorption over the full solar spectrum in copper oxide and selenium composite film

Authors: Fei Gao, Rongrong Gao, Hao Liu, Zhou Yang, Xiaodong Hua, Xin Wu, Shengzhong, Liu

Abstract: Usually, single-crystal material has a longer carrier diffusion length due to fewer defects. Here, we report a nano/amorphous copper oxide and selenium (COS) composite film prepared by radio frequency magnetron co-sputtering of CuO and Se and post annealing. The photo-generated carriers in the COS film can diffuse very far (3.147 mm). Additionally, the COS film can strongly absorb light over the e… ▽ More Usually, single-crystal material has a longer carrier diffusion length due to fewer defects. Here, we report a nano/amorphous copper oxide and selenium (COS) composite film prepared by radio frequency magnetron co-sputtering of CuO and Se and post annealing. The photo-generated carriers in the COS film can diffuse very far (3.147 mm). Additionally, the COS film can strongly absorb light over the entire solar spectrum region (250-2500 nm) (average absorptance is ~80%). These results indicate that the COS composite is an excellent material and can be used in solar cells and other photo-electric devices. △ Less

Submitted 8 May, 2019; originally announced May 2019.

Comments: 8 pages,4 figures

Electron Accumulation and Emergent Magnetism in LaMnO3/SrTiO3 Heterostructures

Authors: Zuhuang Chen, Zhanghui Chen, Z. Q. Liu, M. E. Holtz, C. J. Li, X. Renshaw Wang, W. M. Lv, M. Motapothula, L. S. Fan, J. A. Turcaud, L. R. Dedon, C. Frederick, R. J. Xu, R. Gao, A. T. NDiaye, E. Arenholz, J. A. Mundy, T. Venkatesan, D. A. Muller, L. -W. Wang, J. Liu, L. W. Martin

Abstract: Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here we report the disentanglement of critical thicknesses for electron reconstruction and the emergence of ferromagnetism in polar-mismatched LaMnO3/SrTiO3 (001) heterostructures. Using a combination of element-specific X-ray absorption spectroscopy an… ▽ More Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here we report the disentanglement of critical thicknesses for electron reconstruction and the emergence of ferromagnetism in polar-mismatched LaMnO3/SrTiO3 (001) heterostructures. Using a combination of element-specific X-ray absorption spectroscopy and dichroism, and first-principles calculations, interfacial electron accumulation and ferromagnetism have been observed within the polar, antiferromagnetic insulator LaMnO3. Our results show that the critical thickness for the onset of electron accumulation is as thin as 2 unit cells (UC), significantly thinner than the observed critical thickness for ferromagnetism of 5 UC. The absence of ferromagnetism below 5 UC is likely induced by electron over-accumulation. In turn, by controlling the doping of the LaMnO3, we are able to neutralize the excessive electrons from the polar mismatch in ultrathin LaMnO3 films and thus enable ferromagnetism in films as thin as 3 UC, extending the limits of our ability to synthesize and tailor emergent phenomena at interfaces and demonstrating manipulation of the electronic and magnetic structures of materials at the shortest length scales. △ Less

Submitted 6 September, 2017; originally announced September 2017.

Comments: Accepted by Phys. Rev. Lett

Self-Assembled, Nanostructured, Tunable Metamaterials via Spinodal Decomposition

Authors: Zuhuang Chen, Xi Wang, Yajun Qi, Sui Yang, Julio A N T Soares, Brent A Apgar, Ran Gao, Ruijuan Xu, Yeonbae Lee, Xiang Zhang, Jie Yao, Lane W Martin

Abstract: Self-assembly via nanoscale phase-separation offers an elegant route to fabricate nanocomposites with physical properties unattainable in single-component systems. One important class of nanocomposites are optical metamaterials which exhibit exotic properties and lead to opportunities for agile control of light propagation. Such metamaterials are typically fabricated via expensive and hard-to-scal… ▽ More Self-assembly via nanoscale phase-separation offers an elegant route to fabricate nanocomposites with physical properties unattainable in single-component systems. One important class of nanocomposites are optical metamaterials which exhibit exotic properties and lead to opportunities for agile control of light propagation. Such metamaterials are typically fabricated via expensive and hard-to-scale top-down processes requiring precise integration of dissimilar materials. In turn, there is a need for alternative, more efficient routes to fabricate large-scale metamaterials for practical applications with deep-subwavelength resolution. Here, we demonstrate a bottom-up approach to fabricate scalable nanostructured metamaterials via spinodal decomposition. To demonstrate the potential of such an approach, we leverage the innate spinodal decomposition of the VO2-TiO2 system, the metal-to-insulator transition in VO2, and thin-film epitaxy, to produce self-organized nanostructures with coherent interfaces and a structural unit cell down to 15 nm (tunable between horizontally- and vertically-aligned lamellae) wherein the iso-frequency surface is temperature-tunable from elliptic- to hyperbolic-dispersion producing metamaterial behavior. These results provide an efficient route for the fabrication of nanostructured metamaterials and other nanocomposites for desired functionalities. △ Less

Submitted 13 December, 2016; originally announced December 2016.

Comments: 30 pages, 4 figures

Journal ref: ACS Nano, 10, 10237 (2016)

Electric-field Induced Reversible Switching of the Magnetic Easy-axis in Co/BiFeO3/SrRuO3/SrTiO3 Heterostructures

Authors: T. R. Gao, X. H. Zhang, W. Ratcliff II, S. Maruyama, M. Murakami, V. Anbusathaiah, Z. Yamani, P. J. Chen, R. Shull, R. Ramesh, I. Takeuchi

Abstract: Electric-field (E-field) control of magnetism enabled by multiferroics has the potential to revolutionize the landscape of present memory devices plagued with high energy dissipation. To date, this E-field controlled multiferroic scheme at room temperature has only been demonstrated using BiFeO3 (BFO) films grown on DyScO3 (refs 1 and 2), a unique and expensive substrate, which gives rise to a par… ▽ More Electric-field (E-field) control of magnetism enabled by multiferroics has the potential to revolutionize the landscape of present memory devices plagued with high energy dissipation. To date, this E-field controlled multiferroic scheme at room temperature has only been demonstrated using BiFeO3 (BFO) films grown on DyScO3 (refs 1 and 2), a unique and expensive substrate, which gives rise to a particular ferroelectric domain pattern in BFO. Here, we demonstrate reversible E-field-induced switching of the magnetic state of the Co layer in Co/BFO (001) thin film heterostructures fabricated on SrTiO3 substrates. The angular dependence of the coercivity and the remanent magnetization of the Co layer indicates that its easy axis reversibly switches by 45° back and forth between the (100) and the (110) crystallographic directions of SrTiO3 as a result of alternating application of positive and negative voltage pulses on BFO. The coercivity of the Co layer exhibits a hysteretic behavior between two states as a function of voltage. To explain the observation, we have also measured the exact canting angle of the antiferromagnetic G-type domain in BFO films for the first time using neutron diffraction. These results suggest a pathway to integrating BFO-based devices on Si wafers for implementing low power consumption and non-volatile magnetoelectronic devices. △ Less

Submitted 22 November, 2016; originally announced November 2016.

Josephson effects in an alternating current biased transition edge sensor

Authors: Luciano Gottardi, Alex Kozorezov, Hiroki Akamatsu, Jan van der Kuur, Marcel P. Bruijn, Roland H. den Hartog, Richard Hijmering, Pourya Khosropanah, Colin Lambert, Anton. J. van der Linden, Marcel L. Ridder, Toyo Suzuki, Jan R. Gao

Abstract: We report the experimental evidence of the ac Josephson effect in a transition edge sensor (TES) operating in a frequency domain multiplexer and biased by ac voltage at MHz frequencies. The effect is observed by measuring the non-linear impedance of the sensor. The TES is treated as a weakly linked superconducting system and within the resistively shunted junction model framework. We provide a ful… ▽ More We report the experimental evidence of the ac Josephson effect in a transition edge sensor (TES) operating in a frequency domain multiplexer and biased by ac voltage at MHz frequencies. The effect is observed by measuring the non-linear impedance of the sensor. The TES is treated as a weakly linked superconducting system and within the resistively shunted junction model framework. We provide a full theoretical explanation of the results by finding the analytic solution of the non-inertial Langevian equation of the system and calculating the non-linear response of the detector to a large ac bias current in the presence of noise. △ Less

Submitted 2 April, 2016; originally announced April 2016.

Comments: 4 pages, 4 figures

Journal ref: Appl. Phys. Lett. 105, 162605 (2014)

Visible light carrier generation in co-doped epitaxial titanate films

Authors: Ryan B. Comes, Sergey Y. Smolin, Tiffany C. Kaspar, Ran Gao, Brent A. Apgar, Lane W. Martin, Mark E. Bowden, Jason B. Baxter, Scott A. Chambers

Abstract: Perovskite titanates such as SrTiO$_{3}$ (STO) exhibit a wide range of important functional properties, including high electron mobility, ferroelectricity, and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications, however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that b… ▽ More Perovskite titanates such as SrTiO$_{3}$ (STO) exhibit a wide range of important functional properties, including high electron mobility, ferroelectricity, and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications, however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr$^{3+}$ dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to between 2.4 and 2.7 eV depending on doping levels. Transient reflectance spectroscopy measurements are in agreement with the observations from ellipsometry and confirm that optically generated carriers are present for longer than 2 ns. Finally, through photoelectrochemical methylene blue degradation measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO. △ Less

Submitted 28 January, 2015; originally announced January 2015.

Comments: 19 pages including supplement, 8 figures (3 main, 5 supplement)

Journal ref: Applied Physics Letters, 106, 092901 (2015)

Improved time-resolved magneto-optical Kerr effect technique and dynamic magnetization reversal mechanism of perpendicularly magnetized $L1_{\mathrm{0}}$ FePt films

Authors: X. D. Liu, Z. Xu, R. X. Gao, Z. F. Chen, T. S. Lai, J. Du, S. M. Zhou

Abstract: The dynamic coercivity cannot be measured rigorously by the conventional time-resolved magneto-optical Kerr effect technique because the irreversible deviation of the transient magnetization is accumulated. In order to remove the accumulation effect, the alternating magnetic field is employed and synchronized with the femtosecond laser pulse. Since the sample is reset before each single laser pu… ▽ More The dynamic coercivity cannot be measured rigorously by the conventional time-resolved magneto-optical Kerr effect technique because the irreversible deviation of the transient magnetization is accumulated. In order to remove the accumulation effect, the alternating magnetic field is employed and synchronized with the femtosecond laser pulse. Since the sample is reset before each single laser pulse, the accumulation effect of the irreversible deviation of the transient magnetization is removed. For perpendicularly magnetized $L1_{\mathrm{0}}$ FePt films, the dynamic magnetization reversal process is accomplished by the nucleation of reversed domains and the pinned domain wall motion. △ Less

Submitted 31 January, 2009; v1 submitted 7 December, 2008; originally announced December 2008.

Comments: 11pages, 3 figures

Enhancement of quasiparticle recombination in Ta and Al superconductors by implantation of magnetic and nonmagnetic atoms

Authors: R. Barends, S. van Vliet, J. J. A. Baselmans, S. J. C. Yates, J. R. Gao, T. M. Klapwijk

Abstract: The quasiparticle recombination time in superconducting films, consisting of the standard electron-phonon interaction and a yet to be identified low temperature process, is studied for different densities of magnetic and nonmagnetic atoms. For both Ta and Al, implanted with Mn, Ta and Al, we observe an increase of the recombination rate. We conclude that the enhancement of recombination is not d… ▽ More The quasiparticle recombination time in superconducting films, consisting of the standard electron-phonon interaction and a yet to be identified low temperature process, is studied for different densities of magnetic and nonmagnetic atoms. For both Ta and Al, implanted with Mn, Ta and Al, we observe an increase of the recombination rate. We conclude that the enhancement of recombination is not due to the magnetic moment, but arises from an enhancement of disorder. △ Less

Submitted 12 November, 2008; originally announced November 2008.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 79, 020509 (2009)

Contribution of dielectrics to frequency and noise of NbTiN superconducting resonators

Authors: R. Barends, H. L. Hortensius, T. Zijlstra, J. J. A. Baselmans, S. J. C. Yates, J. R. Gao, T. M. Klapwijk

Abstract: We study NbTiN resonators by measurements of the temperature dependent resonance frequency and frequency noise. Additionally, resonators are studied covered with SiOx dielectric layers of various thicknesses. The resonance frequency develops a non-monotonic temperature dependence with increasing SiOx layer thickness. The increase in the noise is independent of the SiOx thickness, demonstrating t… ▽ More We study NbTiN resonators by measurements of the temperature dependent resonance frequency and frequency noise. Additionally, resonators are studied covered with SiOx dielectric layers of various thicknesses. The resonance frequency develops a non-monotonic temperature dependence with increasing SiOx layer thickness. The increase in the noise is independent of the SiOx thickness, demonstrating that the noise is not dominantly related to the low temperature resonance frequency deviations. △ Less

Submitted 17 May, 2008; v1 submitted 22 April, 2008; originally announced April 2008.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 92, 223502 (2008)

Quasiparticle relaxation in optically excited high-Q superconducting resonators

Authors: R. Barends, J. J. A. Baselmans, S. J. C. Yates, J. R. Gao, J. N. Hovenier, T. M. Klapwijk

Abstract: The quasiparticle relaxation time in superconducting films has been measured as a function of temperature using the response of the complex conductivity to photon flux. For tantalum and aluminium, chosen for their difference in electron-phonon coupling strength, we find that at high temperatures the relaxation time increases with decreasing temperature, as expected for electron-phonon interactio… ▽ More The quasiparticle relaxation time in superconducting films has been measured as a function of temperature using the response of the complex conductivity to photon flux. For tantalum and aluminium, chosen for their difference in electron-phonon coupling strength, we find that at high temperatures the relaxation time increases with decreasing temperature, as expected for electron-phonon interaction. At low temperatures we find in both superconducting materials a saturation of the relaxation time, suggesting the presence of a second relaxation channel not due to electron-phonon interaction. △ Less

Submitted 5 June, 2008; v1 submitted 5 February, 2008; originally announced February 2008.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett. 100, 257002 (2008)