Showing 1–47 of 47 results for author: Diez, E

Superballistic conduction in hydrodynamic antidot graphene superlattices

Authors: Jorge Estrada-Álvarez, Juan Salvador-Sánchez, Ana Pérez-Rodríguez, Carlos Sánchez-Sánchez, Vito Clericò, Daniel Vaquero, Kenji Watanabe, Takashi Taniguchi, Enrique Diez, Francisco Domínguez-Adame, Mario Amado, Elena Díaz

Abstract: Viscous electron flow exhibits exotic signatures such as superballistic conduction. Bending the geometry of the device is a must to observe hydrodynamic effects. To this end, we build three antidot graphene superlattices with different hole diameters. We measure their electrical properties at various temperatures and under the effect of a perpendicular magnetic field. We find an enhanced superball… ▽ More Viscous electron flow exhibits exotic signatures such as superballistic conduction. Bending the geometry of the device is a must to observe hydrodynamic effects. To this end, we build three antidot graphene superlattices with different hole diameters. We measure their electrical properties at various temperatures and under the effect of a perpendicular magnetic field. We find an enhanced superballistic effect, suggesting the effectiveness of the geometry at bending the electron flow. In addition, superballistic conduction behaves non-monotonically with the magnetic field, which is related with the ballistic-hydrodynamic transition. We also analyze the device resistance as a function of the size of the antidot superlattice to find characteristic scaling laws describing the different transport regimes. We prove that the antidot superlattice is a convenient geometry for realizing hydrodynamic flow, and the experiment provides valuable explanations for the technologically relevant effects of superballistic conduction and scaling laws. △ Less

Submitted 5 July, 2024; originally announced July 2024.

Uncovering Bound States in the Continuum in InSb nanowire networks

Authors: D. Martínez, P. A. Orellana, L. Rosales, J. Dolado, M. Amado, E. Diez, F. Domínguez-Adame, R. P. A. Lima

Abstract: Bound states in the continuum (BICs) are exotic, localized states even though their energy lies in the continuum spectra. Since its discovery in 1929, the quest to unveil these exotic states in charge transport experiments remains an active pursuit in condensed matter physics. Here, we study charge transport in InSb nanowire networks in the ballistic regime and subject to a perpendicular magnetic… ▽ More Bound states in the continuum (BICs) are exotic, localized states even though their energy lies in the continuum spectra. Since its discovery in 1929, the quest to unveil these exotic states in charge transport experiments remains an active pursuit in condensed matter physics. Here, we study charge transport in InSb nanowire networks in the ballistic regime and subject to a perpendicular magnetic field as ideal candidates to observe and control the appearance of BICs. We find that BICs reveal themselves as distinctive resonances or antiresonances in the conductance by varying the applied magnetic field and the Fermi energy. We systematically consider different lead connections in hashtag-like nanowire networks, finding the optimal configuration that enhances the features associated with the emergence of BICs. Finally, the investigation focuses on the effect of the Rashba spin-orbit interaction of InSb on the occurrence of BICs in nanowire networks. While the interaction generally plays a detrimental role in the signatures of the BICs in the conductance of the nanowire networks, it opens the possibility to operate these nanostructures as spin filters for spintronics. We believe that this work could pave the way for the unambiguous observation of BICs in charge transport experiments and for the development of advanced spintronic devices. △ Less

Submitted 22 March, 2024; originally announced March 2024.

Comments: 9 pages, 6 figures, supplementary material. Submission to SciPost

Polarization-tuneable excitonic spectral features in the optoelectronic response of atomically thin ReS2

Authors: Daniel Vaquero, Olga Arroyo-Gascón, Juan Salvador-Sánchez, Pedro L. Alcázar-Ruano, Enrique Diez, Ana Perez-Rodríguez, Julián D. Correa, Francisco Dominguez-Adame, Leonor Chico, Jorge Quereda

Abstract: The low crystal symmetry of rhenium disulphide (ReS2) leads to the emergence of dichroic optical and optoelectronic response, absent in other layered transition metal dichalcogenides, which could be exploited for device applications requiring polarization resolution. To date, spectroscopy studies on the optical response of ReS2 have relied almost exclusively in characterization techniques involvin… ▽ More The low crystal symmetry of rhenium disulphide (ReS2) leads to the emergence of dichroic optical and optoelectronic response, absent in other layered transition metal dichalcogenides, which could be exploited for device applications requiring polarization resolution. To date, spectroscopy studies on the optical response of ReS2 have relied almost exclusively in characterization techniques involving optical detection, such as photoluminescence, absorbance, or reflectance spectroscopy. However, to realize the full potential of this material, it is necessary to develop knowledge on its optoelectronic response with spectral resolution. In this work, we study the polarization-dependent photocurrent spectra of few-layer ReS2 photodetectors, both in room conditions and at cryogenic temperature. Our spectral measurements reveal two main exciton lines at energies matching those reported for optical spectroscopy measurements, as well as their excited states. Moreover, we also observe an additional exciton-like spectral feature with a photoresponse intensity comparable to the two main exciton lines. We attribute this feature, not observed in earlier photoluminescence measurements, to a non-radiative exciton transition. The intensities of the three main exciton features, as well as their excited states, modulate with linear polarization of light, each one acquiring maximal strength at a different polarization angle. We have performed first-principles exciton calculations employing the Bethe-Salpeter formalism, which corroborate our experimental findings. Our results bring new perspectives for the development of ReS2-based nanodevices. △ Less

Submitted 4 October, 2023; v1 submitted 22 June, 2023; originally announced June 2023.

Phonon-mediated room-temperature quantum Hall transport in graphene

Authors: Daniel Vaquero, Vito Clericò, Michael Schmitz, Juan Antonio Delgado-Notario, Adrian Martín-Ramos, Juan Salvador-Sánchez, Claudius S. A. Müller, Km Rubi, Kenji Watanabe, Takashi Taniguchi, Bernd Beschoten, Christoph Stampfer, Enrique Diez, Mikhail I. Katsnelson, Uli Zeitler, Steffen Wiedmann, Sergio Pezzini

Abstract: The quantum Hall (QH) effect in two-dimensional electron systems (2DESs) is conventionally observed at liquid-helium temperatures, where lattice vibrations are strongly suppressed and bulk carrier scattering is dominated by disorder. However, due to large Landau level (LL) separation (~2000 K at B = 30 T), graphene can support the QH effect up to room temperature (RT), concomitant with a non-negli… ▽ More The quantum Hall (QH) effect in two-dimensional electron systems (2DESs) is conventionally observed at liquid-helium temperatures, where lattice vibrations are strongly suppressed and bulk carrier scattering is dominated by disorder. However, due to large Landau level (LL) separation (~2000 K at B = 30 T), graphene can support the QH effect up to room temperature (RT), concomitant with a non-negligible population of acoustic phonons with a wave-vector commensurate to the inverse electronic magnetic length. Here, we demonstrate that graphene encapsulated in hexagonal boron nitride (hBN) realizes a novel transport regime, where dissipation in the QH phase is governed predominantly by electron-phonon scattering. Investigating thermally-activated transport at filling factor 2 up to RT in an ensemble of back-gated devices, we show that the high B-field behaviour correlates with their zero B-field transport mobility. By this means, we extend the well-accepted notion of phonon-limited resistivity in ultra-clean graphene to a hitherto unexplored high-field realm. △ Less

Submitted 20 January, 2023; originally announced January 2023.

Comments: 17 pages, 4 figures. Supplementary information available at https://doi.org/10.1038/s41467-023-35986-3

Journal ref: Nature Communications 14, 318 (2023)

Effect of the external fields in high Chern number quantum anomalous Hall insulators

Authors: Yuriko Baba, Mario Amado, Enrique Diez, Francisco Domínguez-Adame, Rafael A. Molina

Abstract: A quantum anomalous Hall state with high Chern number has so far been realized in multiplayer structures consisting of alternating magnetic and undoped topological insulator layers. However, in previous proposals, the Chern number can be only tuned by varying the doping concentration or the width of the magnetic topological insulator layers. This drawback largely restrict the applications of dissi… ▽ More A quantum anomalous Hall state with high Chern number has so far been realized in multiplayer structures consisting of alternating magnetic and undoped topological insulator layers. However, in previous proposals, the Chern number can be only tuned by varying the doping concentration or the width of the magnetic topological insulator layers. This drawback largely restrict the applications of dissipationless chiral edge currents in electronics since the number of conducting channels remains fixed. In this work, we propose a way of varying the Chern number at will in these multilayered structures by means of an external electric field applied along the stacking direction. In the presence of an electric field in the stacking direction, the inverted bands of the unbiased structure coalesce and hybridize, generating new inverted bands and collapsing the previously inverted ones. In this way, the number of Chern states can be tuned externally in the sample, without the need of modifying the number and width of the layers or the doping level. We showed that this effect can be uncovered by the variation of the transverse conductance as a function of the electric field at constant injection energy at the Fermi level. △ Less

Submitted 6 August, 2022; originally announced August 2022.

Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy

Authors: Daniel Brito, Ana Pérez-Rodriguez, Ishwor Khatri, Carlos José Tavares, Mario Amado, Eduardo Castro, Enrique Diez, Sascha Sadewasser, Marcel S Claro

Abstract: Topological insulators possess a non-conductive bulk and present surface states, henceforth, they are electrically conductive along their boundaries. Bismuth selenide ($Bi_2Se_3$) is one of the most promising topological insulators. However, a major drawback is its n-type nature arising from its natural doping, which makes the transport in the bulk dominant. This effect can be overcome by shifting… ▽ More Topological insulators possess a non-conductive bulk and present surface states, henceforth, they are electrically conductive along their boundaries. Bismuth selenide ($Bi_2Se_3$) is one of the most promising topological insulators. However, a major drawback is its n-type nature arising from its natural doping, which makes the transport in the bulk dominant. This effect can be overcome by shifting the chemical potential into the bandgap, turning the transport of the surface states to be more pronounced than the bulk counterpart. In this work, $Bi_2Se_3$ was grown by molecular beam epitaxy and doped with 0.8, 2, 7, and 14 at. % of Ga, with the aim of shifting the chemical potential into the bandgap. The structural, morphological, and electronic properties of the Ga doped $Bi_2Se_3$ are studied. Raman and X-ray diffraction measurements confirmed the incorporation of the dopants into the crystal structure. Transport and magnetoresistance measurements in the temperature range of 1.5 to 300 K show that Ga-doped $Bi_2Se_3$ is n-type with a bulk charge carrier concentration of $10^{19} cm^{-3}$. Remarkably, magnetotransport of the weak antilocalization effect (WAL) measurements confirm the existence of surface states up to a doping percentage of 2 at. % of Ga and coherence length values between 50-800 nm, which envisages the possibility of topological superconductivity in this material. △ Less

Submitted 30 June, 2022; originally announced June 2022.

Comments: 17 pages, 8 figures, Supplementary Information included

Generation and control of non-local chiral currents in graphene superlattices by orbital Hall effect

Authors: Juan Salvador-Sánchez, Luis M. Canonico, Ana Pérez-Rodríguez, Tarik P. Cysne, Yuriko Baba, Vito Clericò, Marc Vila, Daniel Vaquero, Juan Antonio Delgado-Notario, José M. Caridad, Kenji Watanabe, Takashi Taniguchi, Rafael A. Molina, Francisco Domínguez-Adame, Stephan Roche, Enrique Diez, Tatiana G. Rappoport, Mario Amado

Abstract: Graphene-based superlattices offer a new materials playground to exploit and control a higher number of electronic degrees of freedom, such as charge, spin, or valley for disruptive technologies. Recently, orbital effects, emerging in multivalley band structure lacking inversion symmetry, have been discussed as possible mechanisms for developing orbitronics. Here, we report non-local transport mea… ▽ More Graphene-based superlattices offer a new materials playground to exploit and control a higher number of electronic degrees of freedom, such as charge, spin, or valley for disruptive technologies. Recently, orbital effects, emerging in multivalley band structure lacking inversion symmetry, have been discussed as possible mechanisms for developing orbitronics. Here, we report non-local transport measurements in small gap hBN/graphene/hBN moiré superlattices which reveal very strong magnetic field-induced chiral response which is stable up to room temperature. The measured sign dependence of the non-local signal with respect to the magnetic field orientation clearly indicates the manifestation of emerging orbital magnetic moments. The interpretation of experimental data is well supported by numerical simulations, and the reported phenomenon stands as a formidable way of in-situ manipulation of the transverse flow of orbital information, that could enable the design of orbitronic devices. △ Less

Submitted 9 June, 2022; originally announced June 2022.

Comments: 5 pages, 5 figures and supplementary information

Fast response photogating in monolayer MoS2 phototransistors

Authors: Daniel Vaquero, Vito Clericò, Juan Salvador-Sánchez, Elena Díaz, Francisco Domínguez-Adame, Leonor Chico, Yahya M. Meziani, Enrique Diez, Jorge Quereda

Abstract: Two-dimensional transition metal dichalcogenide (TMD) phototransistors have been object of intensive research during the last years due to their potential for photodetection. Photoresponse in these devices is typically caused by a combination of two physical mechanisms: photoconductive effect (PCE) and photogating effect (PGE). In earlier literature for monolayer (1L) MoS2 phototransistors PGE is… ▽ More Two-dimensional transition metal dichalcogenide (TMD) phototransistors have been object of intensive research during the last years due to their potential for photodetection. Photoresponse in these devices is typically caused by a combination of two physical mechanisms: photoconductive effect (PCE) and photogating effect (PGE). In earlier literature for monolayer (1L) MoS2 phototransistors PGE is generally attributed to charge trapping by polar molecules adsorbed to the semiconductor channel, giving rise to a very slow photoresponse. Thus, the photoresponse of 1L-MoS2 phototransistors at high-frequency light modulation is assigned to PCE alone. Here we investigate the photoresponse of a fully h-BN encapsulated monolayer (1L) MoS2 phototransistor. In contrast with previous understanding, we identify a rapidly responding PGE mechanism that becomes the dominant contribution to photoresponse under high-frequency light modulation. Using a Hornbeck-Haynes model for the photocarrier dynamics, we fit the illumination power dependence of this PGE and estimate the energy level of the involved traps. The resulting energies are compatible with shallow traps in MoS2 caused by the presence of sulfur vacancies. △ Less

Submitted 13 September, 2021; v1 submitted 22 December, 2020; originally announced December 2020.

Comments: arXiv admin note: text overlap with arXiv:2004.02526

Excitons, trions and Rydberg states in monolayer MoS2 revealed by low temperature photocurrent spectroscopy

Authors: Daniel Vaquero, Vito Clericò, Juan Salvador-Sánchez, Adrián Martín-Ramos, Elena Díaz, Francisco Domínguez-Adame, Yahya M. Meziani, Enrique Diez, Jorge Quereda

Abstract: We investigate excitonic transitions in a h-BN encapsulated monolayer $\textrm{MoS}_2$ phototransistor by photocurrent spectroscopy at cryogenic temperature (T = 5 K). The spectra presents excitonic peaks with linewidths as low as 8 meV, one order of magnitude lower than in earlier photocurrent spectroscopy measurements. We observe four spectral features corresponding to the ground states of neutr… ▽ More We investigate excitonic transitions in a h-BN encapsulated monolayer $\textrm{MoS}_2$ phototransistor by photocurrent spectroscopy at cryogenic temperature (T = 5 K). The spectra presents excitonic peaks with linewidths as low as 8 meV, one order of magnitude lower than in earlier photocurrent spectroscopy measurements. We observe four spectral features corresponding to the ground states of neutral excitons ($\textrm{X}_{\textrm{1s}}^\textrm{A}$ and $\textrm{X}_{\textrm{1s}}^\textrm{B}$) and charged trions ($\textrm{T}^\textrm{A}$ and $\textrm{T}^\textrm{B}$) as well as up to eight additional spectral lines at energies above the $\textrm{X}_{\textrm{1s}}^\textrm{B}$ transition, which we attribute to the Rydberg series of excited states of $\textrm{X}^\textrm{A}$ and $\textrm{X}^\textrm{B}$. The relative intensities of the different spectral features can be tuned by the applied gate and drain-source voltages, with trions and Rydberg excited states becoming more prominent at large gate voltages. Using an effective-mass theory for excitons in two-dimensional transition-metal dichalcogenides we are able to accurately fit the measured spectral lines and unambiguously associate them with their corresponding Rydberg states. The fit also allows us to determine the quasiparticle bandgap and spin-orbit splitting of monolayer $\textrm{MoS}_2$, as well as the exciton binding energies of $\textrm{X}^\textrm{A}$ and $\textrm{X}^\textrm{B}$. △ Less

Submitted 28 August, 2020; v1 submitted 6 April, 2020; originally announced April 2020.

Quantum nanoconstrictions fabricated by cryo-etching in encapsulated graphene

Authors: Vito Clericò, Juan Antonio Delgado-Notario, Marta Saiz-Bretín, Andrey V. Malyshev, Yahya M. Meziani, Pedro Hidalgo, Bianchi Méndez, Mario Amado, Francisco Domínguez-Adame, Enrique Diez

Abstract: More than a decade after the discovery of graphene, ballistic transport in nanostructures based on this intriguing material still represents a challenging field of research in two-dimensional electronics. The presence of rough edges in nanostructures based on this material prevents the appearance of truly ballistic electron transport as theo\-re\-tically predicted and, therefore, not well-develope… ▽ More More than a decade after the discovery of graphene, ballistic transport in nanostructures based on this intriguing material still represents a challenging field of research in two-dimensional electronics. The presence of rough edges in nanostructures based on this material prevents the appearance of truly ballistic electron transport as theo\-re\-tically predicted and, therefore, not well-developed plateaus of conductance have been revealed to date. In this work we report on a novel implementation of the cryo-etching method, which enabled us to fabricate graphene nanoconstrictions encapsulated between hexagonal boron nitride thin films with unprecedented control of the structure edges. High quality smooth nanometer-rough edges are characterized by atomic force microscopy and a clear correlation between low roughness and the existence of well-developed quantized conductance steps with the concomitant occurrence of ballistic transport is found at low temperature. In par\-ti\-cu\-lar, we come upon exact 2$e^{2}/h$ quantization steps of conductance at zero magnetic field due to size quantization, as it has been theoretically predicted for truly ballistic electron transport through graphene nanoconstrictions. △ Less

Submitted 20 February, 2019; originally announced February 2019.

Journal ref: Scientific Reports 9, 13572 (2019)

Evidence of unconventional superconductivity in the Ni-doped NbB2 system

Authors: S. T. Renosto, R. Lang, E. Diez, L. E. Corrêa, M. S. da Luz, Z. Fisk, A. J. S. Machado

Abstract: In this paper, a comprehensive study of the effects of Ni-doping on structural, electrical, thermal and magnetic properties of the NbB2 is presented. Low amounts (\leq 10 %) of Ni substitution on Nb sites cause structural distortions and induce drastic changes in the physical properties, such as the emergence of a bulk superconducting state with anomalous behaviors in the critical fields (lower an… ▽ More In this paper, a comprehensive study of the effects of Ni-doping on structural, electrical, thermal and magnetic properties of the NbB2 is presented. Low amounts (\leq 10 %) of Ni substitution on Nb sites cause structural distortions and induce drastic changes in the physical properties, such as the emergence of a bulk superconducting state with anomalous behaviors in the critical fields (lower and upper) and in the specific heat. Ni-doping at the 9 at.% level, for instance, is able to increase the critical temperature (TC) in stoichiometric NbB2 (< 1.3 K) to approximately 6.0 K. Bulk superconductivity is confirmed by magnetization, electronic transport, and specific heat measurements. Both Hc1 and Hc2 critical fields exhibit a linear dependence with reduced temperature (T/TC), and the specific heat deviates remarkably from the conventional exponential temperature dependence of the single-band BCS theory. These findings suggest multiband superconductivity in the composition range from 0.01 \leq x \leq 0.10. △ Less

Submitted 23 October, 2018; originally announced October 2018.

Comments: Keywords: Multiband superconductivity; NbB2 system; Ni substitution; Linear critical fields

Strong Electronic Interaction and Signatures of Nodal Superconductivity in Zr$_5$Pt$_3$C$_x$

Authors: S. T. Renosto, R. Lang, A. L. R. Manesco, D. Rodrigues Jr., F. B. Santos, A. J. S. Machado, M. R. Baldan, E. Diez

Abstract: The physical properties of the Zr$_5$Pt$_3$ compound with interstitial carbon in hexagonal D8$_8$-structure was investigated. A set of macroscopic measurements reveal a bulk superconducting at approximately 7 K for Zr$_5$Pt$_3$C$_{0.3}$ close to Zr$_5$Pt$_3$, also with a correlate anomalous resistivity behavior. However, both the signatures of strong electron-electron interaction, and the electron… ▽ More The physical properties of the Zr$_5$Pt$_3$ compound with interstitial carbon in hexagonal D8$_8$-structure was investigated. A set of macroscopic measurements reveal a bulk superconducting at approximately 7 K for Zr$_5$Pt$_3$C$_{0.3}$ close to Zr$_5$Pt$_3$, also with a correlate anomalous resistivity behavior. However, both the signatures of strong electron-electron interaction, and the electronic contribution to specific heat, increase dramatically with the C doping. For the first time the x-ray photoelectron spectra compared with DFT/PWLO calculations of electronic structure show a complex Fermi surface with high density of states for Zr$_5$Pt$_3$. Also results show the signature of unconventional superconductivity. Indeed, was observed an unusual behavior for lower and upper critical field diagrams of Zr$_5$Pt$_3$C$_{0.3}$. The temperature dependence of penetration length and electronic contribution to specific heat suggests that electronic pairing deviates of $s$-wave the BCS scenario. △ Less

Submitted 8 January, 2019; v1 submitted 13 September, 2018; originally announced September 2018.

Comments: 6 pages, 11 figures, changed discussion about superconductivity

Quantized electron transport through graphene nanoconstrictions

Authors: V. Clerico, J. A. Delgado-Notario, M. Saiz-Bretin, C. H. Fuentevilla, A. V. Malyshev, J. D. Lejarreta, E. Diez, F. Dominguez-Adame

Abstract: We study the quantization of Dirac fermions in lithographically defined graphene nanoconstrictions. We observe quantized conductance in single nanoconstrictions fabricated on top of a thin hexamethyldisilazane layer over a Si/SiO_2 wafer. This nanofabrication method allows us to obtain well defined edges in the nanoconstrictions, thus reducing the effects of edge roughness on the conductance. We p… ▽ More We study the quantization of Dirac fermions in lithographically defined graphene nanoconstrictions. We observe quantized conductance in single nanoconstrictions fabricated on top of a thin hexamethyldisilazane layer over a Si/SiO_2 wafer. This nanofabrication method allows us to obtain well defined edges in the nanoconstrictions, thus reducing the effects of edge roughness on the conductance. We prove the occurrence of ballistic transport and identify several size quantization plateaus in the conductance at low temperature. Experimental data and numerical simulations show good agreement, demonstrating that the smoothing of the plateaus is not related to edge roughness but to quantum interference effects. △ Less

Submitted 27 February, 2018; originally announced February 2018.

Comments: Accepted for publication in physica status solidi (a)

Spin dynamics in helical molecules with non-linear interactions

Authors: E. Diaz, P. Albares, P. G. Estevez, J. M. Cervero, C. Gaul, E. Diez, F. Dominguez-Adame

Abstract: It is widely admitted that the helical conformation of certain chiral molecules may induce a sizable spin selectivity observed in experiments. Spin selectivity arises as a result of the interplay between a helicity-induced spin-orbit coupling and electric dipole fields in the molecule. From the theoretical point of view, different phenomena might affect the spin dynamics in helical molecules, such… ▽ More It is widely admitted that the helical conformation of certain chiral molecules may induce a sizable spin selectivity observed in experiments. Spin selectivity arises as a result of the interplay between a helicity-induced spin-orbit coupling and electric dipole fields in the molecule. From the theoretical point of view, different phenomena might affect the spin dynamics in helical molecules, such as quantum dephasing, dissipation and the role of metallic contacts. Previous studies neglected the local deformation of the molecule about the carrier thus far, but this assumption seems unrealistic to describe charge transport in molecular systems. We introduce an effective model describing the electron spin dynamics in a deformable helical molecule with weak spin-orbit coupling. We find that the electron-lattice interaction allows the formation of stable solitons such as bright solitons with well defined spin projection onto the molecule axis. We present a thorough study of these bright solitons and analyze their possible impact on the spin dynamics in deformable helical molecules. △ Less

Submitted 26 October, 2017; originally announced October 2017.

Evidence for an excitonic insulator phase in a zero-gap InAs/GaSb bilayer

Authors: W. Yu, V. Clericò, C. Hernández Fuentevilla, X. Shi, Y. Jiang, D. Saha, W. K. Lou, K. Chang, D. H. Huang, G. Gumbs, D. Smirnov, C. J. Stanton, Z. Jiang, V. Bellani, Y. Meziani, E. Diez, W. Pan, S. D. Hawkins, J. F. Klem

Abstract: Many-body interactions can produce novel ground states in a condensed-matter system. For example, interacting electrons and holes can spontaneously form excitons, a neutral bound state, provided that the exciton binding energy exceeds the energy separation between the single particle states. Here we report on electrical transport measurements on spatially separated two-dimensional electron and hol… ▽ More Many-body interactions can produce novel ground states in a condensed-matter system. For example, interacting electrons and holes can spontaneously form excitons, a neutral bound state, provided that the exciton binding energy exceeds the energy separation between the single particle states. Here we report on electrical transport measurements on spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an InAs(10 nm)/GaSb(5 nm) coupled quantum well. We observe a narrow and intense maximum (~500 kΩ) in the four-terminal resistivity in the charge neutrality region, separating the electron-like and hole-like regimes, with a strong activated temperature-dependence above T = 7 K and perfect stability against quantizing magnetic fields. By quantitatively comparing our data with early theoretical predictions, we show that such unexpectedly large resistance in our nominally zero-gap semi-metal system is probably due to the formation of an excitonic insulator state. △ Less

Submitted 25 January, 2017; originally announced January 2017.

BRST Symmetry: Boundary Conditions and Edge States in QED

Authors: Nirmalendu Acharyya, A. P. Balachandran, Verónica Errasti Díez, P. N. Bala Subramanian, Sachindeo Vaidya

Abstract: In manifolds with spatial boundary, BRST formalism can be used to quantize gauge theories. We show that, in a $U(1)$ gauge theory, only a subset of all the boundary conditions allowed by the self-adjointness of the Hamiltonian preserves BRST symmetry. Hence, the theory can be quantized using BRST formalism only when that subset of boundary conditions is considered. We also show that for such bound… ▽ More In manifolds with spatial boundary, BRST formalism can be used to quantize gauge theories. We show that, in a $U(1)$ gauge theory, only a subset of all the boundary conditions allowed by the self-adjointness of the Hamiltonian preserves BRST symmetry. Hence, the theory can be quantized using BRST formalism only when that subset of boundary conditions is considered. We also show that for such boundary conditions, there exist fermionic states which are localized near the boundary. △ Less

Submitted 19 April, 2016; v1 submitted 13 April, 2016; originally announced April 2016.

Comments: 15 pages, Minor corrections

Journal ref: Phys. Rev. D 94, 085026 (2016)

Superconducting properties in tantalum decorated three-dimensional graphene and carbon structures

Authors: Cayetano S. F. Cobaleda, Xiaoyin Xiao, D. Bruce Burckel, Ronen Polsky, Duanni Huang, Enrique Diez, W. Pan

Abstract: We present here the results on superconducting properties in tantalum thin films (100nm thick) deposited on three-dimensional graphene (3DG) and carbon structures. A superconducting transition is observed in both composite thin films with a superconducting transition temperature of 1.2K and 1.0K, respectively. We have further measured the magnetoresistance at various temperatures and differential… ▽ More We present here the results on superconducting properties in tantalum thin films (100nm thick) deposited on three-dimensional graphene (3DG) and carbon structures. A superconducting transition is observed in both composite thin films with a superconducting transition temperature of 1.2K and 1.0K, respectively. We have further measured the magnetoresistance at various temperatures and differential resistance dV/dI at different magnetic fields in these two composite thin films. In both samples, a much large critical magnetic field (~ 2 Tesla) is observed and this critical magnetic field shows linear temperature dependence. Finally, an anomalously large cooling effect was observed in the differential resistance measurements in our 3DG-tantalum device when the sample turns superconducting. Our results may have important implications in flexible superconducting electronic device applications. △ Less

Submitted 25 August, 2014; originally announced August 2014.

Journal ref: Appl. Phys. Lett. 105, 053508 (2014)

Critical point for the CAF-F phase transition at charge neutrality in bilayer graphene

Authors: S. Pezzini, C. Cobaleda, B. A. Piot, V. Bellani, E. Diez

Abstract: We report on magneto-transport measurements up to 30 T performed on a bilayer graphene Hall bar, enclosed by two thin hexagonal boron nitride flakes. Our high mobility sample exhibits an insulating state at neutrality point which evolves into a metallic phase when a strong in-plane field is applied, as expected for a transition from a canted antiferromagnetic to a ferromagnetic spin ordered phase.… ▽ More We report on magneto-transport measurements up to 30 T performed on a bilayer graphene Hall bar, enclosed by two thin hexagonal boron nitride flakes. Our high mobility sample exhibits an insulating state at neutrality point which evolves into a metallic phase when a strong in-plane field is applied, as expected for a transition from a canted antiferromagnetic to a ferromagnetic spin ordered phase. For the first time we individuate a temperature-independent crossing in the four-terminal resistance as a function of the total magnetic field, corresponding to the critical point of the transition. We show that the critical field scales linearly with the perpendicular component of the field, as expected from the underlying competition between the Zeeman energy and interaction-induced anisotropies. A clear scaling of the resistance is also found and an universal behavior is proposed in the vicinity of the transition. △ Less

Submitted 28 July, 2014; originally announced July 2014.

Magneto-transport of graphene and quantum phase transitions in the quantum Hall regime

Authors: Mario Amado, Enrique Diez, Francesco Rossella, Vittorio Bellani, David Lopez-Romero, Duncan K Maude

Abstract: We studied the magneto-transport in SiO2 substrate-supported monolayer graphene and the quantum phase transitions that characterize the quantum Hall regime, using magnetic fields up to 28T and temperatures down to 4K. The analysis of the temperature dependence of the Hall and longitudinal resistivity reveals new non-universalities of the critical exponents of the plateau-insulator transition. Thes… ▽ More We studied the magneto-transport in SiO2 substrate-supported monolayer graphene and the quantum phase transitions that characterize the quantum Hall regime, using magnetic fields up to 28T and temperatures down to 4K. The analysis of the temperature dependence of the Hall and longitudinal resistivity reveals new non-universalities of the critical exponents of the plateau-insulator transition. These exponent depends on the type of disorder that governs the electrical transport, which knowledge is important for the design and fabrication of new graphene nano-devices. △ Less

Submitted 17 April, 2012; originally announced April 2012.

Angle dependent conductance in graphene

Authors: C. H. Fuentevilla, J. D. Lejarreta, C. Cobaleda, E. Diez

Abstract: In this paper, we study a theoretical method to calculate the conductance across a square barrier potential in monolayer graphene. We have obtained an analytical expression for the transmission coefficient across a potential barrier for monolayer graphene. Using the transmission coefficient obtained we have an analytical expression for the conductance. This expression will be used to calculate the… ▽ More In this paper, we study a theoretical method to calculate the conductance across a square barrier potential in monolayer graphene. We have obtained an analytical expression for the transmission coefficient across a potential barrier for monolayer graphene. Using the transmission coefficient obtained we have an analytical expression for the conductance. This expression will be used to calculate the conductance in the case in which there is a potential barrier, which in our case will modelise the behaviour of a top gate voltage of a field effect transistor. Once this analysis has been performed we study the scenario in which carriers scatter with the potential barrier with different incidence angles and we have found that for any incident angle an effective gap is induced. △ Less

Submitted 19 February, 2012; originally announced February 2012.

Circularly Polarized Resonant Rayleigh Scattering and Skyrmions in the $ν$ = 1 Quantum Hall Ferromagnet

Authors: V. Bellani, F. Rossella, M. Amado, E. Diez, K. Kowalik, G. Biasiol, L. Sorba

Abstract: We use the circularly polarized resonant Rayleigh scattering (RRS) to study the quantum Hall ferromagnet at $ν$ = 1. At this filling factor we observe a right handed copolarized RRS which probes the Skyrmion spin texture of the electrons in the photoexcited grounds state. The resonant scattering is not present in the left handed copolarization, and this can be related to the correlation between Sk… ▽ More We use the circularly polarized resonant Rayleigh scattering (RRS) to study the quantum Hall ferromagnet at $ν$ = 1. At this filling factor we observe a right handed copolarized RRS which probes the Skyrmion spin texture of the electrons in the photoexcited grounds state. The resonant scattering is not present in the left handed copolarization, and this can be related to the correlation between Skymionic effects, screening and spin wave excitations. These results evidence that RRS is a valid method for the study of the spin texture of the quantum Hall states. △ Less

Submitted 11 April, 2011; v1 submitted 10 February, 2011; originally announced February 2011.

Optical probing of correlation driven liquid-to-insulator transition in 2D electron gas

Authors: F. Dionigi, F. Rossella, V. Bellani, M. Amado, E. Diez, K. Kowalik, G. Biasiol, L. Sorba

Abstract: We study the quantum Hall liquid and the metal-insulator transition in a high mobility two dimensional electron gas, by means of photoluminescence and magneto-transport. In the integer and fractional regime at nu > 1/3, analyzing the emission energy dispersion we probe the magneto-Coulomb screening and the hidden symmetry of the electron liquid. In the fractional regime above above nu =1/3 the sys… ▽ More We study the quantum Hall liquid and the metal-insulator transition in a high mobility two dimensional electron gas, by means of photoluminescence and magneto-transport. In the integer and fractional regime at nu > 1/3, analyzing the emission energy dispersion we probe the magneto-Coulomb screening and the hidden symmetry of the electron liquid. In the fractional regime above above nu =1/3 the system undergoes the metal-to-insulator transition, and in the insulating phase the dispersion becomes linear with evidence of an increased renormalized mass. △ Less

Submitted 19 April, 2011; v1 submitted 17 July, 2010; originally announced July 2010.

Plateau insulator transition in graphene

Authors: M. Amado, E. Diez, D. López-Romero, F. Rossella, J. M. Caridad, F. Dionigi, V. Bellani, D. K. Maude

Abstract: The quantum Hall effect in a single-layer graphene sample is studied in strong magnetic fields up to 28 T. Our measurements reveal the existence of a metal- insulator transition from filling factor $ν=-2$ to $ν=0$. The value of the universal scaling exponent is found to be $κ=0.57 $ in graphene and therefore in a truly two-dimensional system. This value of $κ$ is in agreement with the accepted u… ▽ More The quantum Hall effect in a single-layer graphene sample is studied in strong magnetic fields up to 28 T. Our measurements reveal the existence of a metal- insulator transition from filling factor $ν=-2$ to $ν=0$. The value of the universal scaling exponent is found to be $κ=0.57 $ in graphene and therefore in a truly two-dimensional system. This value of $κ$ is in agreement with the accepted universal value for the plateau-insulator transitions in standard quasi two-dimensional electron and hole gases. △ Less

Submitted 30 March, 2010; v1 submitted 9 July, 2009; originally announced July 2009.

Comments: 10 pages, 5 figures

Symmetry-Induced Tunnelling in One-Dimensional Disordered Potentials

Authors: E. Diez, F. Izrailev, A. A. Krokhin, A. Rodriguez

Abstract: A new mechanism of tunnelling at macroscopic distances is proposed for a wave packet localized in one-dimensional disordered potential with mirror symmetry, V(-x)=V(x). Unlike quantum tunnelling through a regular potential barrier, which occurs only at the energies lower then the barrier height, the proposed mechanism of tunnelling exists even for weak white-noise-like scattering potentials. It… ▽ More A new mechanism of tunnelling at macroscopic distances is proposed for a wave packet localized in one-dimensional disordered potential with mirror symmetry, V(-x)=V(x). Unlike quantum tunnelling through a regular potential barrier, which occurs only at the energies lower then the barrier height, the proposed mechanism of tunnelling exists even for weak white-noise-like scattering potentials. It also exists in classical circuits of resonant contours with random resonant frequencies. The latter property may be used as a new method of secure communication, which does not require coding and decoding of the transmitting signal. △ Less

Submitted 24 September, 2007; originally announced September 2007.

Comments: 10 pages, 4 figures

Journal ref: Phys. Rev. B 78 (2008) 035118-22

Resonant Rayleigh Scattering in Ordered and Intentionally Disordered Semiconductor Superlattices

Authors: V. Bellani, M. Amado, E. Diez, C. Koerdt, M. Potemski, R. Hey

Abstract: We report the experimental study of resonant Rayleigh scattering in GaAs-AlGaAs superlattices with ordered and intentionally disordered potential profiles (correlated and uncorrelated) in the growth direction z. We show that the intentional disorder along z modify markedly the energy dispersion of the dephasing rates of the excitons. The application of an external magnetic field in the same dire… ▽ More We report the experimental study of resonant Rayleigh scattering in GaAs-AlGaAs superlattices with ordered and intentionally disordered potential profiles (correlated and uncorrelated) in the growth direction z. We show that the intentional disorder along z modify markedly the energy dispersion of the dephasing rates of the excitons. The application of an external magnetic field in the same direction allows the continuous tuning of the in plane exciton localization and to study the interplay between the in plane and vertical disorder. △ Less

Submitted 25 January, 2007; originally announced January 2007.

Comments: 6 pages, 3 figures. Submittes to Phys. Rev. B

Journal ref: Phys. Rev. B 76, 075349 (2007)

Dicke effect in a quantum wire with side-coupled quantum dots

Authors: P. A. Orellana, F. Dominguez-Adame, E. Diez

Abstract: A system of an array of side-coupled quantum-dots attached to a quantum wire is studied theoretically. Transport through the quantum wire is investigated by means of a noninteracting Anderson tunneling Hamiltonian. Analytical expressions of the transmission probability and phase are given. The transmission probability shows an energy spectrum with forbidden and allowed bands that depends on the… ▽ More A system of an array of side-coupled quantum-dots attached to a quantum wire is studied theoretically. Transport through the quantum wire is investigated by means of a noninteracting Anderson tunneling Hamiltonian. Analytical expressions of the transmission probability and phase are given. The transmission probability shows an energy spectrum with forbidden and allowed bands that depends on the up-down asymmetry of the system. In up-down symmetry only the gap survives, and in up-down asymmetry an allowed band is formed. We show that the allowed band arises by the indirect coupling between the up and down quantum dots. In addition, the band edges can be controlled by the degree of asymmetry of the quantum dots. We discuss the analogy between this phenomenon with the Dicke effect in optics. △ Less

Submitted 4 July, 2006; originally announced July 2006.

Comments: 11 pages, 5 figures. To appear in Physica E

Two-Dimensional Electron Gas in InGaAs/InAlAs Quantum Wells

Authors: E. Diez, Y. P. Chen, S. Avesque, M. Hilke, E. Peled, D. Shahar, J. M. Cervero, D. L. Sivco, A. Y. Cho

Abstract: We designed and performed low temperature DC transport characterization studies on two-dimensional electron gases confined in lattice-matched In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As quantum wells grown by molecular beam epitaxy on InP substrates. The nearly constant mobility for samples with the setback distance larger than 50nm and the similarity between the quantum and transport life… ▽ More We designed and performed low temperature DC transport characterization studies on two-dimensional electron gases confined in lattice-matched In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As quantum wells grown by molecular beam epitaxy on InP substrates. The nearly constant mobility for samples with the setback distance larger than 50nm and the similarity between the quantum and transport life-time suggest that the main scattering mechanism is due to short range scattering, such as alloy scattering, with a scattering rate of 2.2 ps$^{-1}$. We also obtain the Fermi level at the In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As surface to be 0.36eV above the conduction band, when fitting our experimental densities with a Poisson-Schrödinger model. △ Less

Submitted 12 January, 2006; originally announced January 2006.

Comments: Accepted in Applied Physics Letters

Symmetries of the Resistance of Mesoscopic Samples in the Quantum Hall Regime

Authors: E. Peled, Y. Chen, E. Diez, D. C. Tsui, D. Shahar, D. L. Sivco, A. Y. Cho

Abstract: The symmetry properties of the resistance of mesoscopic samples in the quantum Hall regime are investigated. In addition to the reciprocity relation, our samples obey new symmetries, that relate resistances measured with different contact configurations. Different kinds of symmetries are identified, depending on whether the magnetic field value is such that the system is above, or below, a quant… ▽ More The symmetry properties of the resistance of mesoscopic samples in the quantum Hall regime are investigated. In addition to the reciprocity relation, our samples obey new symmetries, that relate resistances measured with different contact configurations. Different kinds of symmetries are identified, depending on whether the magnetic field value is such that the system is above, or below, a quantum Hall transition. Related symmetries have recently been reported for macroscopic samples in the quantum Hall regime by Ponomarenko {\it et al.} (Solid State Commun. {\bf 130}, 705 (2004)), and Karmakar {\it et al.} (Preprint cond-mat/0309694). △ Less

Submitted 20 July, 2004; originally announced July 2004.

Journal ref: Phys. Rev. B 69, R241305 (2004)

Near-Perfect Correlation of the Resistance Components of Mesoscopic Samples at the Quantum Hall Regime

Authors: E. Peled, D. Shahar, Y. Chen, E. Diez, D. L. Sivco, A. Y. Cho

Abstract: We study the four-terminal resistance fluctuations of mesoscopic samples near the transition between the $ν=2$ and the $ν=1$ quantum Hall states. We observe near-perfect correlations between the fluctuations of the longitudinal and Hall components of the resistance. These correlated fluctuations appear in a magnetic-field range for which the two-terminal resistance of the samples is quantized. W… ▽ More We study the four-terminal resistance fluctuations of mesoscopic samples near the transition between the $ν=2$ and the $ν=1$ quantum Hall states. We observe near-perfect correlations between the fluctuations of the longitudinal and Hall components of the resistance. These correlated fluctuations appear in a magnetic-field range for which the two-terminal resistance of the samples is quantized. We discuss these findings in light of edge-state transport models of the quantum Hall effect. We also show that our results lead to an ambiguity in the determination of the width of quantum Hall transitions. △ Less

Submitted 10 December, 2003; v1 submitted 17 July, 2003; originally announced July 2003.

Comments: As published

Journal ref: Phys. Rev. Lett. 91, 236802 (2003)

Transport in random quantum dot superlattices

Authors: I. Gomez, F. Dominguez-Adame, E. Diez, P. Orellana

Abstract: We present a novel model to calculate single-electron states in random quantum dot superlattices made of wide-gap semiconductors. The source of disorder comes from the random arrangement of the quantum dots (configurational disorder) as well as spatial inhomogeneities of their shape (morphological disorder). Both types of disorder break translational symmetry and prevent the formation of miniban… ▽ More We present a novel model to calculate single-electron states in random quantum dot superlattices made of wide-gap semiconductors. The source of disorder comes from the random arrangement of the quantum dots (configurational disorder) as well as spatial inhomogeneities of their shape (morphological disorder). Both types of disorder break translational symmetry and prevent the formation of minibands, as occurs in regimented arrays of quantum dots. The model correctly describes channel mixing and broadening of allowed energy bands due to elastic scattering by disorder. △ Less

Submitted 12 March, 2002; originally announced March 2002.

Electron scattering on disordered double barrier GaAs-Al$_x$Ga$_{1-x}$As heterostructures

Authors: I. Gomez, E. Diez, F. Dominguez-Adame, P. Orellana

Abstract: We present a novel model to calculate vertical transport properties such as conductance and current in unintentionally disordered double barrier GaAs-Al$_x$Ga$_{1-x}$As heterostructures. The source of disorder comes from interface roughness at the heterojunctions (lateral disorder) as well as spatial inhomogeneities of the Al mole fraction in the barriers (compositional disorder). Both lateral a… ▽ More We present a novel model to calculate vertical transport properties such as conductance and current in unintentionally disordered double barrier GaAs-Al$_x$Ga$_{1-x}$As heterostructures. The source of disorder comes from interface roughness at the heterojunctions (lateral disorder) as well as spatial inhomogeneities of the Al mole fraction in the barriers (compositional disorder). Both lateral and compositional disorder break translational symmetry along the lateral direction and therefore electrons can be scattered off the growth direction. The model correctly describe channel mixing due to these elastic scattering events. In particular, for realistic degree of disorder, we have found that the effects of compositional disorder on transport properties are negligible as compared to the effects due to lateral disorder. △ Less

Submitted 12 December, 2001; originally announced December 2001.

Comments: 19 pages, 8 figures

Experimental evidence of delocalized states in random dimer superlattices

Authors: V. Bellani, E. Diez, R. Hey, L. Toni, L. Tarricone, G. P. Parravicini, F. Dominguez-Adame, R. Gomez-Alcala

Abstract: We study the electronic properties of GaAs-AlGaAs superlattices with intentional correlated disorder by means of photoluminescence and vertical dc resistance. The results are compared to those obtained in ordered and uncorrelated disordered superlattices. We report the first experimental evidence that spatial correlations inhibit localization of states in disordered low-dimensional systems, as o… ▽ More We study the electronic properties of GaAs-AlGaAs superlattices with intentional correlated disorder by means of photoluminescence and vertical dc resistance. The results are compared to those obtained in ordered and uncorrelated disordered superlattices. We report the first experimental evidence that spatial correlations inhibit localization of states in disordered low-dimensional systems, as our previous theoretical calculations suggested, in contrast to the earlier belief that all eigenstates are localized. △ Less

Submitted 4 February, 1999; originally announced February 1999.

Comments: 4 pages, 5 figures. Physical Review Letters (in press)

Nonlinear dynamics in superlattices driven by high frequency ac-fields

Authors: J. Devis, E. Diez, V. Bellani

Abstract: We investigate the dynamical processes taking place in nanodevices driven by high-frequency electromagnetic fields. We want to elucidate the role of different mechanisms that could lead to loss of quantum coherence. Our results show how the dephasing effects of disorder that destroy after some periods coherent oscillations, such as Rabi oscillations, can be overestimated if we do not consider th… ▽ More We investigate the dynamical processes taking place in nanodevices driven by high-frequency electromagnetic fields. We want to elucidate the role of different mechanisms that could lead to loss of quantum coherence. Our results show how the dephasing effects of disorder that destroy after some periods coherent oscillations, such as Rabi oscillations, can be overestimated if we do not consider the electron-electron interactions that can reduce dramatically the decoherence effects of the structural imperfections. Experimental conditions for the observation of the predicted effects are discussed. △ Less

Submitted 11 January, 1999; originally announced January 1999.

Comments: REVTEX (8 pages) and 4 figures (Postscript)

Coherent carrier dynamics in semiconductor superlattices

Authors: Enrique Diez, Rafael Gomez-Alcala, Francisco Dominguez-Adame, Angel Sanchez, Gennady P. Berman

Abstract: We investigate the coherent dynamics of carriers in semiconductor superlattices driven by ac-dc electric fields. We solve numerically the time-dependent effective-mass equation for the envelope function. We find that carriers undergo Rabi oscillations when the driving frequency is close to the separation between minibands. We investigate the coherent dynamics of carriers in semiconductor superlattices driven by ac-dc electric fields. We solve numerically the time-dependent effective-mass equation for the envelope function. We find that carriers undergo Rabi oscillations when the driving frequency is close to the separation between minibands. △ Less

Submitted 8 January, 1998; originally announced January 1998.

Comments: REVTEX (6 pages) and 3 figures (PostScript). Accepted in Physics Letters A

Report number: MA/UC3M/12/1997

Suppresion of Bloch oscillations by weak disorder in semiconductor superlattices

Authors: Enrique Diez, Francisco Dominguez-Adame, Angel Sanchez

Abstract: We investigate the dephasing dynamics of Bloch oscillations in semiconductor superlattices by means of a very simple model including disorder and applied electric fields. A thorough numerical study of our model allows us to claim that small, unintentional well width fluctuations can be responsible for fast dephasing of Bloch oscillations at low temperatures. We show that the lifetime of Bloch os… ▽ More We investigate the dephasing dynamics of Bloch oscillations in semiconductor superlattices by means of a very simple model including disorder and applied electric fields. A thorough numerical study of our model allows us to claim that small, unintentional well width fluctuations can be responsible for fast dephasing of Bloch oscillations at low temperatures. We show that the lifetime of Bloch oscillations is controlled by a characteristic time which depends on the degree of disorder and is independent of the electric field. This result is further supported by the excellent agreement between our model calculations and several recent experiments, and leads to specific new predictions. △ Less

Submitted 29 October, 1996; originally announced October 1996.

Comments: 4 pages, RevTex, 3 PostScript figures

Dynamical phenomena in Fibonacci Semiconductor Superlattices

Authors: Enrique Diez, Francisco Dominguez-Adame, Enrique Macia, Angel Sanchez

Abstract: We present a detailed study of the dynamics of electronic wavepackets in Fibonacci semiconductor superlattices, both in flat band conditions and subject to homogeneous electric fields perpendicular to the layers. Coherent propagation of electrons is described by means of a scalar Hamiltonian using the effective-mass approximation. We have found that an initial Gaussian wavepacket is filtered sel… ▽ More We present a detailed study of the dynamics of electronic wavepackets in Fibonacci semiconductor superlattices, both in flat band conditions and subject to homogeneous electric fields perpendicular to the layers. Coherent propagation of electrons is described by means of a scalar Hamiltonian using the effective-mass approximation. We have found that an initial Gaussian wavepacket is filtered selectively when passing through the superlattice. This means that only those components of the wavepacket whose wavenumber belong to allowed subminibands of the fractal-like energy spectrum can propagate over the entire superlattice. The Fourier pattern of the transmitted part of the wavepacket presents clear evidences of fractality reproducing those of the underlying energy spectrum. This phenomenon persists even in the presence of unintentional disorder due to growth imperfections. Finally, we have demonstrated that periodic coherent-field induced oscillations (Bloch oscillations), which we are able to observe in our simulations of periodic superlattices, are replaced in Fibonacci superlattices by more complex oscillations displaying quasiperiodic signatures, thus sheding more light onto the very peculiar nature of the electronic states in these systems. △ Less

Submitted 17 October, 1996; originally announced October 1996.

Comments: 7 pagex, RevTex, 5 Postscript figures. Physical Review B (in press)

Electron dynamics in intentionally disordered semiconductor superlattices

Authors: Enrique Diez, Angel Sanchez, Francisco Dominguez-Adame

Abstract: We study the dynamical behavior of disordered quantum-well-based semiconductor superlattices where the disorder is intentional and short-range correlated. We show that, whereas the transmission time of a particle grows exponentially with the number of wells in an usual disordered superlattice for any value of the incident particle energy, for specific values of the incident energy this time incr… ▽ More We study the dynamical behavior of disordered quantum-well-based semiconductor superlattices where the disorder is intentional and short-range correlated. We show that, whereas the transmission time of a particle grows exponentially with the number of wells in an usual disordered superlattice for any value of the incident particle energy, for specific values of the incident energy this time increases linearly when correlated disorder is included. As expected, those values of the energy coincide with a narrow subband of extended states predicted by the static calculations of Domínguez-Adame {\em et al.} [Phys. Rev. B {\bf 51}, 14 ,359 (1994)]; such states are seen in our dynamical results to exhibit a ballistic regime, very close to the WKB approximation of a perfect superlattice. Fourier transform of the output signal for an incident Gaussian wave packet reveals a dramatic filtering of the original signal, which makes us confident that devices based on this property may be designed and used for nanotechnological applications. This is more so in view of the possibility of controllingthe outp ut band using a dc electric field, which we also discuss. In the conclusion we summarize our results and present an outlook for future developments arising from this work. △ Less

Submitted 9 October, 1996; originally announced October 1996.

Comments: 10 pagex, RevTex, 13 Postscript figures. Physical Review B (in press)

Effective Nonlinear Model of Resonant Tunneling Nanostructures

Authors: Enrique Diez, Angel Sanchez, Francisco Dominguez-Adame

Abstract: We introduce a model of a nonlinear double-barrier structure, to describe in a simple way the effects of electron-electron scattering while remaining analytically tractable. The model is based on a generalized effective-mass equation where a nonlinear local field interaction is introduced to account for those inelastic scattering phenomena. Resonance peaks seen in the transmission coefficient sp… ▽ More We introduce a model of a nonlinear double-barrier structure, to describe in a simple way the effects of electron-electron scattering while remaining analytically tractable. The model is based on a generalized effective-mass equation where a nonlinear local field interaction is introduced to account for those inelastic scattering phenomena. Resonance peaks seen in the transmission coefficient spectra for the linear case appear shifted to higher energies depending on the magnitude of the nonlinear coupling. Our results are in good agreement with self-consistent solutions of the Schrödinger and Poisson equations. The calculation procedure is seen to be very fast, which makes our technique a good candidate for rapid approximate analysis of these structures. △ Less

Submitted 19 February, 1996; originally announced February 1996.

Comments: Uuencoded file including: REVTEX (10 pages) and 3 figures (PostScript). Accepted in Physics Letters A

Extended states and dynamical localization in the random-dimer model

Authors: F. Dominguez-Adame, A Sanchez, E Diez

Abstract: We study quantum diffusion of wavepackets in one-dimensional random binary subject to an applied electric field. We consider three different cases: Periodic, random, and random dimer (paired) lattices. We analyze the spatial extent of electronic wavepackets by means of the time-dependent inverse participatio ratio. We show that the delocalized states recently found in random dimer lattices becom… ▽ More We study quantum diffusion of wavepackets in one-dimensional random binary subject to an applied electric field. We consider three different cases: Periodic, random, and random dimer (paired) lattices. We analyze the spatial extent of electronic wavepackets by means of the time-dependent inverse participatio ratio. We show that the delocalized states recently found in random dimer lattices become spatially localized under the action of the applied field (dynamical localization) but wavepackets are much less localized than in purely random lattices. We conclude that the resonant tunneling effects causing delocalization play an important role even in the presence of the electric field. △ Less

Submitted 25 May, 1995; originally announced May 1995.

Comments: 4 pages, REVTeX 3.0 + epsf.sty + multicol.sty, figures in a separate file, submitted to Phys Lett A

Report number: FIMAT-7/95, MA/UC3M/08/95

Transport properties of nonlinear double-barrier structures

Authors: E. Diez, A. Sanchez, F. Dominguez-Adame

Abstract: We introduce a solvable model of a nonlinear double-barrier structure, described by a generalized effective-mass equation with a nonlinear coupling term. This model is interesting in its own right for possible new applications, as well as to help understand the combined effect of spatial correlations and nonlinearity on disordered systems. Although we specifically discuss the application of the… ▽ More We introduce a solvable model of a nonlinear double-barrier structure, described by a generalized effective-mass equation with a nonlinear coupling term. This model is interesting in its own right for possible new applications, as well as to help understand the combined effect of spatial correlations and nonlinearity on disordered systems. Although we specifically discuss the application of the model to electron transport in semiconductor devices, our results apply to other contexts, such as nonlinear optical phenomena. Our model consists of finite width barriers and nonlinearities are dealt with separately in the barriers and in the well, both with and without applied electric fields. We study a wide range of nonlinearity coupling values. When the nonlinear term is only present in the barriers, a sideband is observed in addition to the main resonance and, as a consequence, the current-voltage characteristics present two peaks at different voltages. In this case, the phenomenology remains basically the same through all the considered variation of the parameters. When the well is the component exhibiting nonlinearity, the results depend strongly on the nonlinear coefficient. For small values, the current-voltage characteristics exhibit lower and upper voltage cutoffs. This phenomenon is not present at higher nonlinearities, and eventually linear-like behavior is recovered. We complete this exhaustive study with an analysis of the effects of having simultaneously both kinds of nonlinear couplings. We conclude the paper with a summary of our results, their technological implications, and a prospective discussion of the consequences of our work for more complex systems. △ Less

Submitted 27 March, 1995; originally announced March 1995.

Comments: 12 pages, REVTeX 3.0 + epsf, 9 multiple figures (PostScript) Submitted to Phys Rev B

Report number: MA/UC3M/2/1995

Intentionally disordered superlattices with high dc conductance

Authors: E. Diez, A. Sanchez, F. Dominguez-Adame

Abstract: We study disordered quantum-well-based semiconductor superlattices where the disorder is intentional and short-range correlated. Such systems consist of quantum-wells of two different thicknesses randomly distributed along the growth direction, with the additional constraint that wells of one kind always appears in pairs. Imperfections due to interface roughness are considered by allowing the quan… ▽ More We study disordered quantum-well-based semiconductor superlattices where the disorder is intentional and short-range correlated. Such systems consist of quantum-wells of two different thicknesses randomly distributed along the growth direction, with the additional constraint that wells of one kind always appears in pairs. Imperfections due to interface roughness are considered by allowing the quantum-well thicknesses to fluctuate around their {\em ideal} values. As particular examples, we consider wide-gap (GaAs-Ga$_{1-x}$Al$_{x}$As) and narrow-gap (InAs-GaSb) superlattices. We show the existence of a band of extended states in perfect correlated disordered superlattices, giving rise to a strong enhancement of their finite-temperature dc conductance as compared to usual random ones whenever the Fermi level matches this band. This feature is seen to survive even if interface roughness is taken into account. Our predictions can be used to demonstrate experimentally that structural correlations inhibit the localization effects of disorder, even in the presence of imperfections. This effect might be the basis of new, filter-like or other specific-purpose electronic devices. △ Less

Submitted 20 January, 1995; originally announced January 1995.

Comments: REVTeX 3.0, 20 pages, 7 uuencoded compressed PostScript figures as a separate file. Submitted to IEEE J Quantum Elec.

Report number: MA/UC3M/01/95

Nonlinear treatment of many-body effects in double-barrier resonant tunneling structures

Authors: Enrique Diez, Angel Sanchez, Francisco Dominguez-Adame

Abstract: We introduce a simple, solvable model of double-barrier resonant tunneling structure which includes the effects of electron-electron and electron-phonon scattering. The model is based on a generalized effective-mass equation where a nonlinear coupling is introduced to account for those inelastic scattering phenomena. The nonlinear term depends on one parameter which is the only constant in the m… ▽ More We introduce a simple, solvable model of double-barrier resonant tunneling structure which includes the effects of electron-electron and electron-phonon scattering. The model is based on a generalized effective-mass equation where a nonlinear coupling is introduced to account for those inelastic scattering phenomena. The nonlinear term depends on one parameter which is the only constant in the model to be determined phenomenologically from experimental data. As an example of the application of the model, we discuss GaAs-Ga$_{1-x}$Al$_x$As double-barrier structures. When the nonlinear term is considered, a sideband is observed at an energy of the order of the LO phonon energy in GaAs in addition to and below the main transmission peak. Fitting of the computed spectrum to known experimental results allows to find the value of the nonlinear coupling. As a consequence, we can estimate the electron-phonon coupling from the shift of the main transmission peak in comparison to the linear resonant tunneling. We obtain good agreement with values coming from more sophisticated treatments, which supports our claim that the nonlinear term consistently includes electron-phonon effects. Finally, we use our simple model to study magnitudes of interest for applications, namely $I-V$ characteristics, which are shown to present two negative differential resistance peaks arising from the main transmission peak and the sideband. △ Less

Submitted 30 November, 1994; originally announced November 1994.

Comments: Compressed, uuencoded file containing a REVTeX 3.0 file and PostScript figures included with epsf.sty. 7 pages

Report number: MA/UC3M/19/94

Thomas-Fermi approach to resonant tunneling in delta-doped diodes

Authors: Enrique Diez, Francisco Dominguez-Adame, Angel Sanchez

Abstract: We study resonant tunneling in B-$δ$-doped diodes grown by Si-molecular beam epitaxy. A Thomas-Fermi approach is used to obtain the conduction-band modulation. Using a scalar Hamiltonian within the effective-mass approximation we demonstrate that the occurrence of negative differential resistance (NDR) only involves conduction-band states, whereas interband tunneling effects seem to be negligibl… ▽ More We study resonant tunneling in B-$δ$-doped diodes grown by Si-molecular beam epitaxy. A Thomas-Fermi approach is used to obtain the conduction-band modulation. Using a scalar Hamiltonian within the effective-mass approximation we demonstrate that the occurrence of negative differential resistance (NDR) only involves conduction-band states, whereas interband tunneling effects seem to be negligible. Our theoretical results are in very good agreement with recent experimental observations of NDR in this type of diodes. △ Less

Submitted 2 November, 1994; originally announced November 1994.

Comments: 6 pages, REVTeX 3.0, 5 figures available from diez@dulcinea.uc3m.es

Report number: (Submitted to Appl Phys Lett) MA/UC3M/18/94

Nonlinear Resonant Tunnelling Through Double Barrier Structures

Authors: Enrique Diez, Francisco Dominguez-Adame, Angel Sánchez

Abstract: We study resonant tunnelling through double-barrier structures under an applied bias voltage, in which nonlinearities due to self-interaction of electrons in the barrier regions are included. As an approximation, we concern ourselves with thin barriers simulated by $δ$-function potentials. This approximation allows for an analytical expression of the transmission probability through the structur… ▽ More We study resonant tunnelling through double-barrier structures under an applied bias voltage, in which nonlinearities due to self-interaction of electrons in the barrier regions are included. As an approximation, we concern ourselves with thin barriers simulated by $δ$-function potentials. This approximation allows for an analytical expression of the transmission probability through the structure. We show that the typical peaks due to resonant tunneling decrease and broaden as nonlinearity increases. The main conclusion is that nonlinear effects degrade the peak-to-valley ratio but improve the maximum operation frequency of the resonant tunnelling devices. △ Less

Submitted 26 October, 1994; originally announced October 1994.

Comments: REVTeX 3.0. 8 pages, 4 figures (PostScript files available on request from ED [diez@arwen.uc3m.es]). Submitted to J Phys A. MA/UC3M/17/1994

Quasi-Ballistic Electron Transport in Random Superlattices

Authors: Francisco Dominguez-Adame, Angel Sanchez, Enrique Diez

Abstract: We theoretically study electron transport in disordered, quantum-well based, semiconductor superlattices with structural short-range correlations. Our system consists of equal width square barriers and quantum wells with two different thicknesses. The two kinds of quantum wells are randomly distributed along the growth direction. Structural correlations are introduced by adding the constraint th… ▽ More We theoretically study electron transport in disordered, quantum-well based, semiconductor superlattices with structural short-range correlations. Our system consists of equal width square barriers and quantum wells with two different thicknesses. The two kinds of quantum wells are randomly distributed along the growth direction. Structural correlations are introduced by adding the constraint that one of the wells always appears in pairs. We show that such correlated disordered superlattices exhibit a strong enhancement of their dc conductance as compared to usual random ones, giving rise to quasi-ballistic electron transport. Our predictions can be used to demonstrate experimentally that structural correlations inhibit the localization effects of disorder. We specifically describe the way superlattices should be built and experiments should be carried out for that purpose. △ Less

Submitted 1 August, 1994; originally announced August 1994.

Comments: REVTeX 3.0, 7 pages, 4 figures on request from FD-A (fimat02@emducms1.sis.ucm.es). Submitted to Physical Review B. Preprint MA/UC3M/12/1994

Three-dimensional effects on extended states in disordered models of polymers

Authors: Francisco Dominguez-Adame, Enrique Diez, Angel Sanchez

Abstract: We study electronic transport properties of disordered polymers in the presence of both uncorrelated and short-range correlated impurities. In our procedure, the actual physical potential acting upon the electrons is replaced by a set of nonlocal separable potentials, leading to a Schrödinger equation that is exactly solvable in the momentum representation. We then show that the reflection coeff… ▽ More We study electronic transport properties of disordered polymers in the presence of both uncorrelated and short-range correlated impurities. In our procedure, the actual physical potential acting upon the electrons is replaced by a set of nonlocal separable potentials, leading to a Schrödinger equation that is exactly solvable in the momentum representation. We then show that the reflection coefficient of a pair of impurities placed at neighboring sites (dimer defect) vanishes for a particular resonant energy. When there is a finite number of such defects randomly distributed over the whole lattice, we find that the transmission coefficient is almost unity for states close to the resonant energy, and that those states present a very large localization length. Multifractal analysis techniques applied to very long systems demonstrate that these states are truly extended in the thermodynamic limit. These results reinforce the possibility to verify experimentally theoretical predictions about absence of localization in quasi-one-dimensional disordered systems. △ Less

Submitted 13 July, 1994; originally announced July 1994.

Comments: 16 pages, REVTeX 3.0, 5 figures on request from FDA (fimat02@emducms1.sis.ucm.es). Submitted to Phys. Rev. B. MA/UC3M/09/94

Absence of localization and large dc conductance in random superlattices with correlated disorder

Authors: Enrique Diez, Angel Sanchez, Francisco Dominguez-Adame

Abstract: We study how the influence of structural correlations in disordered systems manifests itself in experimentally measurable magnitudes, focusing on dc conductance of semiconductor superlattices with general potential profiles. We show that the existence of bands of extended states in these structures gives rise to very noticeable peaks in the finite temperature dc conductance as the chemical poten… ▽ More We study how the influence of structural correlations in disordered systems manifests itself in experimentally measurable magnitudes, focusing on dc conductance of semiconductor superlattices with general potential profiles. We show that the existence of bands of extended states in these structures gives rise to very noticeable peaks in the finite temperature dc conductance as the chemical potential is moved through the bands or as the temperature is increased from zero. On the basis of these results we discuss how dc conductance measurements can provide information on the location and width of the bands of extended states. Our predictions can be used to demonstrate experimentally that structural correlations inhibit the localization effects of disorder. △ Less

Submitted 17 June, 1994; originally announced June 1994.

Comments: REVTeX 3.0, 14 pages, 11 figures available on request from ED (diez@arwen.uc3m.es). Submitted to Phys Rev B. MA/UC3M/06/94