-
Superballistic conduction in hydrodynamic antidot graphene superlattices
Authors:
Jorge Estrada-Álvarez,
Juan Salvador-Sánchez,
Ana Pérez-Rodríguez,
Carlos Sánchez-Sánchez,
Vito Clericò,
Daniel Vaquero,
Kenji Watanabe,
Takashi Taniguchi,
Enrique Diez,
Francisco Domínguez-Adame,
Mario Amado,
Elena Díaz
Abstract:
Viscous electron flow exhibits exotic signatures such as superballistic conduction. Bending the geometry of the device is a must to observe hydrodynamic effects. To this end, we build three antidot graphene superlattices with different hole diameters. We measure their electrical properties at various temperatures and under the effect of a perpendicular magnetic field. We find an enhanced superball…
▽ More
Viscous electron flow exhibits exotic signatures such as superballistic conduction. Bending the geometry of the device is a must to observe hydrodynamic effects. To this end, we build three antidot graphene superlattices with different hole diameters. We measure their electrical properties at various temperatures and under the effect of a perpendicular magnetic field. We find an enhanced superballistic effect, suggesting the effectiveness of the geometry at bending the electron flow. In addition, superballistic conduction behaves non-monotonically with the magnetic field, which is related with the ballistic-hydrodynamic transition. We also analyze the device resistance as a function of the size of the antidot superlattice to find characteristic scaling laws describing the different transport regimes. We prove that the antidot superlattice is a convenient geometry for realizing hydrodynamic flow, and the experiment provides valuable explanations for the technologically relevant effects of superballistic conduction and scaling laws.
△ Less
Submitted 5 July, 2024;
originally announced July 2024.
-
High order momentum topological insulator in 2D semi-Dirac materials
Authors:
Marta García Olmos,
Yuriko Baba,
Mario Amado,
Rafael A. Molina
Abstract:
Semi-Dirac materials in 2D present an anisotropic dispersion relation, linear along one direction and quadratic along the perpendicular one. This study explores the topological properties and the influence of disorder in a 2D semi-Dirac Hamiltonian. Anisotropic edge states appear only in one direction. Their topological protection can be rigorously founded on the Zak phase of the one-dimensional r…
▽ More
Semi-Dirac materials in 2D present an anisotropic dispersion relation, linear along one direction and quadratic along the perpendicular one. This study explores the topological properties and the influence of disorder in a 2D semi-Dirac Hamiltonian. Anisotropic edge states appear only in one direction. Their topological protection can be rigorously founded on the Zak phase of the one-dimensional reduction of the semi-Dirac Hamiltonian, parametrically depending on one of the momenta. In general, only a single value of the momentum is topologically protected so these systems can be considered as high order momentum topological insulators. We explore the dependence on the disorder of the edge states and the robustness of the topological protection in these materials. We also explore the consequences of the high order topological protection in momentum space for the transport properties in a two-terminal configuration.
△ Less
Submitted 12 June, 2024;
originally announced June 2024.
-
Uncovering Bound States in the Continuum in InSb nanowire networks
Authors:
D. Martínez,
P. A. Orellana,
L. Rosales,
J. Dolado,
M. Amado,
E. Diez,
F. Domínguez-Adame,
R. P. A. Lima
Abstract:
Bound states in the continuum (BICs) are exotic, localized states even though their energy lies in the continuum spectra. Since its discovery in 1929, the quest to unveil these exotic states in charge transport experiments remains an active pursuit in condensed matter physics. Here, we study charge transport in InSb nanowire networks in the ballistic regime and subject to a perpendicular magnetic…
▽ More
Bound states in the continuum (BICs) are exotic, localized states even though their energy lies in the continuum spectra. Since its discovery in 1929, the quest to unveil these exotic states in charge transport experiments remains an active pursuit in condensed matter physics. Here, we study charge transport in InSb nanowire networks in the ballistic regime and subject to a perpendicular magnetic field as ideal candidates to observe and control the appearance of BICs. We find that BICs reveal themselves as distinctive resonances or antiresonances in the conductance by varying the applied magnetic field and the Fermi energy. We systematically consider different lead connections in hashtag-like nanowire networks, finding the optimal configuration that enhances the features associated with the emergence of BICs. Finally, the investigation focuses on the effect of the Rashba spin-orbit interaction of InSb on the occurrence of BICs in nanowire networks. While the interaction generally plays a detrimental role in the signatures of the BICs in the conductance of the nanowire networks, it opens the possibility to operate these nanostructures as spin filters for spintronics. We believe that this work could pave the way for the unambiguous observation of BICs in charge transport experiments and for the development of advanced spintronic devices.
△ Less
Submitted 22 March, 2024;
originally announced March 2024.
-
Effect of the external fields in high Chern number quantum anomalous Hall insulators
Authors:
Yuriko Baba,
Mario Amado,
Enrique Diez,
Francisco Domínguez-Adame,
Rafael A. Molina
Abstract:
A quantum anomalous Hall state with high Chern number has so far been realized in multiplayer structures consisting of alternating magnetic and undoped topological insulator layers. However, in previous proposals, the Chern number can be only tuned by varying the doping concentration or the width of the magnetic topological insulator layers. This drawback largely restrict the applications of dissi…
▽ More
A quantum anomalous Hall state with high Chern number has so far been realized in multiplayer structures consisting of alternating magnetic and undoped topological insulator layers. However, in previous proposals, the Chern number can be only tuned by varying the doping concentration or the width of the magnetic topological insulator layers. This drawback largely restrict the applications of dissipationless chiral edge currents in electronics since the number of conducting channels remains fixed. In this work, we propose a way of varying the Chern number at will in these multilayered structures by means of an external electric field applied along the stacking direction. In the presence of an electric field in the stacking direction, the inverted bands of the unbiased structure coalesce and hybridize, generating new inverted bands and collapsing the previously inverted ones. In this way, the number of Chern states can be tuned externally in the sample, without the need of modifying the number and width of the layers or the doping level. We showed that this effect can be uncovered by the variation of the transverse conductance as a function of the electric field at constant injection energy at the Fermi level.
△ Less
Submitted 6 August, 2022;
originally announced August 2022.
-
Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy
Authors:
Daniel Brito,
Ana Pérez-Rodriguez,
Ishwor Khatri,
Carlos José Tavares,
Mario Amado,
Eduardo Castro,
Enrique Diez,
Sascha Sadewasser,
Marcel S Claro
Abstract:
Topological insulators possess a non-conductive bulk and present surface states, henceforth, they are electrically conductive along their boundaries. Bismuth selenide ($Bi_2Se_3$) is one of the most promising topological insulators. However, a major drawback is its n-type nature arising from its natural doping, which makes the transport in the bulk dominant. This effect can be overcome by shifting…
▽ More
Topological insulators possess a non-conductive bulk and present surface states, henceforth, they are electrically conductive along their boundaries. Bismuth selenide ($Bi_2Se_3$) is one of the most promising topological insulators. However, a major drawback is its n-type nature arising from its natural doping, which makes the transport in the bulk dominant. This effect can be overcome by shifting the chemical potential into the bandgap, turning the transport of the surface states to be more pronounced than the bulk counterpart. In this work, $Bi_2Se_3$ was grown by molecular beam epitaxy and doped with 0.8, 2, 7, and 14 at. % of Ga, with the aim of shifting the chemical potential into the bandgap. The structural, morphological, and electronic properties of the Ga doped $Bi_2Se_3$ are studied. Raman and X-ray diffraction measurements confirmed the incorporation of the dopants into the crystal structure. Transport and magnetoresistance measurements in the temperature range of 1.5 to 300 K show that Ga-doped $Bi_2Se_3$ is n-type with a bulk charge carrier concentration of $10^{19} cm^{-3}$. Remarkably, magnetotransport of the weak antilocalization effect (WAL) measurements confirm the existence of surface states up to a doping percentage of 2 at. % of Ga and coherence length values between 50-800 nm, which envisages the possibility of topological superconductivity in this material.
△ Less
Submitted 30 June, 2022;
originally announced June 2022.
-
Generation and control of non-local chiral currents in graphene superlattices by orbital Hall effect
Authors:
Juan Salvador-Sánchez,
Luis M. Canonico,
Ana Pérez-Rodríguez,
Tarik P. Cysne,
Yuriko Baba,
Vito Clericò,
Marc Vila,
Daniel Vaquero,
Juan Antonio Delgado-Notario,
José M. Caridad,
Kenji Watanabe,
Takashi Taniguchi,
Rafael A. Molina,
Francisco Domínguez-Adame,
Stephan Roche,
Enrique Diez,
Tatiana G. Rappoport,
Mario Amado
Abstract:
Graphene-based superlattices offer a new materials playground to exploit and control a higher number of electronic degrees of freedom, such as charge, spin, or valley for disruptive technologies. Recently, orbital effects, emerging in multivalley band structure lacking inversion symmetry, have been discussed as possible mechanisms for developing orbitronics. Here, we report non-local transport mea…
▽ More
Graphene-based superlattices offer a new materials playground to exploit and control a higher number of electronic degrees of freedom, such as charge, spin, or valley for disruptive technologies. Recently, orbital effects, emerging in multivalley band structure lacking inversion symmetry, have been discussed as possible mechanisms for developing orbitronics. Here, we report non-local transport measurements in small gap hBN/graphene/hBN moiré superlattices which reveal very strong magnetic field-induced chiral response which is stable up to room temperature. The measured sign dependence of the non-local signal with respect to the magnetic field orientation clearly indicates the manifestation of emerging orbital magnetic moments. The interpretation of experimental data is well supported by numerical simulations, and the reported phenomenon stands as a formidable way of in-situ manipulation of the transverse flow of orbital information, that could enable the design of orbitronic devices.
△ Less
Submitted 9 June, 2022;
originally announced June 2022.
-
Topological valley currents via ballistic edge modes in graphene superlattices near the primary Dirac point
Authors:
Yang Li,
Mario Amado,
Timo Hyart,
Grzegorz P. Mazur,
Jason W. A. Robinson
Abstract:
Graphene on hexagonal boron nitride (hBN) can exhibit a topological phase via mutual crystallographic alignment. Recent measurements of nonlocal resistance ($R_{nl}$) near the secondary Dirac point (SDP) in ballistic graphene/hBN superlattices have been interpreted as arising due to the quantum valley Hall state. We report hBN/graphene/hBN superlattices in which $R_{nl}$ at SDP is negligible, but…
▽ More
Graphene on hexagonal boron nitride (hBN) can exhibit a topological phase via mutual crystallographic alignment. Recent measurements of nonlocal resistance ($R_{nl}$) near the secondary Dirac point (SDP) in ballistic graphene/hBN superlattices have been interpreted as arising due to the quantum valley Hall state. We report hBN/graphene/hBN superlattices in which $R_{nl}$ at SDP is negligible, but below 60 K approaches the value of $h/2e^{2}$ in zero magnetic field at the primary Dirac point with a characteristic decay length of 2 $μ$m. Furthermore, nonlocal transport transmission probabilities based on the Landauer-Büttiker formalism show evidence for spin-degenerate ballistic valley-helical edge modes, which are key for the development of valleytronics
△ Less
Submitted 17 December, 2020;
originally announced December 2020.
-
Transition between canted antiferromagnetic and spin-polarized ferromagnetic quantum Hall states in graphene on a ferrimagnetic insulator
Authors:
Y. Li,
M. Amado,
T. Hyart,
G. P. Mazur,
V. Risinggård,
T. Wagner,
L. McKenzie Sell,
G. Kimbell,
J. Wunderlich,
J. Linder,
J. W. A. Robinson
Abstract:
In the quantum Hall regime of graphene, antiferromagnetic and spin-polarized ferromagnetic states at the zeroth Landau level compete, leading to a canted antiferromagnetic state depending on the direction and magnitude of an applied magnetic field. Here, we investigate this transition at 2.7 K in graphene Hall bars that are proximity coupled to the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$.…
▽ More
In the quantum Hall regime of graphene, antiferromagnetic and spin-polarized ferromagnetic states at the zeroth Landau level compete, leading to a canted antiferromagnetic state depending on the direction and magnitude of an applied magnetic field. Here, we investigate this transition at 2.7 K in graphene Hall bars that are proximity coupled to the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$. From nonlocal transport measurements, we demonstrate an induced magnetic exchange field in graphene, which lowers the magnetic field required to modulate the magnetic state in graphene. These results show that a magnetic proximity effect in graphene is an important ingredient for the development of two-dimensional materials in which it is desirable for ordered states of matter to be tunable with relatively small applied magnetic fields (> 6 T).
△ Less
Submitted 1 June, 2020; v1 submitted 16 May, 2019;
originally announced May 2019.
-
Quantum nanoconstrictions fabricated by cryo-etching in encapsulated graphene
Authors:
Vito Clericò,
Juan Antonio Delgado-Notario,
Marta Saiz-Bretín,
Andrey V. Malyshev,
Yahya M. Meziani,
Pedro Hidalgo,
Bianchi Méndez,
Mario Amado,
Francisco Domínguez-Adame,
Enrique Diez
Abstract:
More than a decade after the discovery of graphene, ballistic transport in nanostructures based on this intriguing material still represents a challenging field of research in two-dimensional electronics. The presence of rough edges in nanostructures based on this material prevents the appearance of truly ballistic electron transport as theo\-re\-tically predicted and, therefore, not well-develope…
▽ More
More than a decade after the discovery of graphene, ballistic transport in nanostructures based on this intriguing material still represents a challenging field of research in two-dimensional electronics. The presence of rough edges in nanostructures based on this material prevents the appearance of truly ballistic electron transport as theo\-re\-tically predicted and, therefore, not well-developed plateaus of conductance have been revealed to date. In this work we report on a novel implementation of the cryo-etching method, which enabled us to fabricate graphene nanoconstrictions encapsulated between hexagonal boron nitride thin films with unprecedented control of the structure edges. High quality smooth nanometer-rough edges are characterized by atomic force microscopy and a clear correlation between low roughness and the existence of well-developed quantized conductance steps with the concomitant occurrence of ballistic transport is found at low temperature. In par\-ti\-cu\-lar, we come upon exact 2$e^{2}/h$ quantization steps of conductance at zero magnetic field due to size quantization, as it has been theoretically predicted for truly ballistic electron transport through graphene nanoconstrictions.
△ Less
Submitted 20 February, 2019;
originally announced February 2019.
-
Spin transport parameters of NbN thin films characterised by spin pumping experiments
Authors:
K. Rogdakis,
A. Sud,
M. Amado,
C. M. Lee,
L. McKenzie-Sell,
K. R. Jeon,
M. Cubukcu,
M. G. Blamire,
J. W. A. Robinson,
L. F. Cohen,
H. Kurebayashi
Abstract:
We present measurements of ferromagnetic-resonance - driven spin pumping and inverse spin-Hall effect in NbN/Y3Fe5O12 (YIG) bilayers. A clear enhancement of the (effective) Gilbert damping constant of the thin-film YIG was observed due to the presence of the NbN spin sink. By varying the NbN thickness and employing spin-diffusion theory, we have estimated the room temperature values of the spin di…
▽ More
We present measurements of ferromagnetic-resonance - driven spin pumping and inverse spin-Hall effect in NbN/Y3Fe5O12 (YIG) bilayers. A clear enhancement of the (effective) Gilbert damping constant of the thin-film YIG was observed due to the presence of the NbN spin sink. By varying the NbN thickness and employing spin-diffusion theory, we have estimated the room temperature values of the spin diffusion length and the spin Hall angle in NbN to be 14 nm and -1.1 10-2, respectively. Furthermore, we have determined the spin-mixing conductance of the NbN/YIG interface to be 10 nm-2. The experimental quantification of these spin transport parameters is an important step towards the development of superconducting spintronic devices involving NbN thin films.
△ Less
Submitted 17 January, 2019;
originally announced January 2019.
-
Large spin-mixing conductance in highly Bi-doped Cu thin films
Authors:
Sandra Ruiz-Gómez,
Aída Serrano,
Rubén Guerrero,
Manuel Muñoz,
Irene Lucas,
Michael Foerster,
Lucia Aballe,
José F. Marco,
Mario Amado,
Lauren McKenzie-Sell,
Angelo di Bernardo,
Jason W. A. Robinson,
Miguel Angel González-Barrio,
Arantzazu Mascaraque,
Lucas Pérez
Abstract:
Spin Hall effect provides an efficient tool for the conversion of a charge current into a spin current, opening the possibility of producing pure spin currents in non-magnetic materials for the next generation of spintronics devices. In this sense, giant Spin Hall Effect has been recently reported in Cu doped with 0.5 % Bi grown by sputtering and larger values are expected for larger Bi doping, ac…
▽ More
Spin Hall effect provides an efficient tool for the conversion of a charge current into a spin current, opening the possibility of producing pure spin currents in non-magnetic materials for the next generation of spintronics devices. In this sense, giant Spin Hall Effect has been recently reported in Cu doped with 0.5 % Bi grown by sputtering and larger values are expected for larger Bi doping, according to first principles calculations. In this work we demonstrate the possibility of doping Cu with up to 10 % of Bi atoms without evidences of Bi surface segregation or cluster formation, as studied by different microscopic and spectroscopic techniques. In addition, YIG/BiCu structures have been grown, showing a spin mixing conductance larger that the one shown by similar Pt/YIG structures. These results reflects the potentiality of these new materials in spintronics devices.
△ Less
Submitted 24 July, 2018; v1 submitted 4 June, 2018;
originally announced June 2018.
-
Synthetic antiferromagnetic coupling between ultra-thin insulating garnets
Authors:
Juan M. Gomez-Perez,
Saül Vélez,
Lauren McKenzie-Sell,
Mario Amado,
Javier Herrero-Martín,
Josu López-López,
S. Blanco-Canosa,
Luis E. Hueso,
Andrey Chuvilin,
Jason W. A. Robinson,
Fèlix Casanova
Abstract:
The use of magnetic insulators is attracting a lot of interest due to a rich variety of spin-dependent phenomena with potential applications to spintronic devices. Here we report ultra-thin yttrium iron garnet (YIG) / gadolinium iron garnet (GdIG) insulating bilayers on gadolinium iron garnet (GGG). From spin Hall magnetoresistance (SMR) and X-ray magnetic circular dichroism measurements, we show…
▽ More
The use of magnetic insulators is attracting a lot of interest due to a rich variety of spin-dependent phenomena with potential applications to spintronic devices. Here we report ultra-thin yttrium iron garnet (YIG) / gadolinium iron garnet (GdIG) insulating bilayers on gadolinium iron garnet (GGG). From spin Hall magnetoresistance (SMR) and X-ray magnetic circular dichroism measurements, we show that the YIG and GdIG magnetically couple antiparallel even in moderate in-plane magnetic fields. The results demonstrate an all-insulating equivalent of a synthetic antiferromagnet in a garnet-based thin film heterostructure and could open new venues for insulators in magnetic devices. As an example, we demonstrate a memory element with orthogonal magnetization switching that can be read by SMR.
△ Less
Submitted 14 March, 2018;
originally announced March 2018.
-
Structural properties of thin-film ferromagnetic topological insulators
Authors:
C. L. Richardson,
J. M. Devine-Stoneman,
G. Divitini,
M. E. Vickers,
C. -Z. Chang,
M. Amado,
J. S. Moodera,
J. W. A. Robinson
Abstract:
We present a comprehensive study of the crystal structure of the thin-film, ferromagnetic topological insulator (Bi, Sb)$_{2-x}$V$_x$Te$_3$. The dissipationless quantum anomalous Hall edge states it manifests are of particular interest for spintronics, as a natural spin filter or pure spin source, and as qubits for topological quantum computing. For ranges typically used in experiments, we investi…
▽ More
We present a comprehensive study of the crystal structure of the thin-film, ferromagnetic topological insulator (Bi, Sb)$_{2-x}$V$_x$Te$_3$. The dissipationless quantum anomalous Hall edge states it manifests are of particular interest for spintronics, as a natural spin filter or pure spin source, and as qubits for topological quantum computing. For ranges typically used in experiments, we investigate the effect of doping, substrate choice and film thickness on the (Bi, Sb)$_2$Te$_3$ unit cell using high-resolution X-ray diffractometry. Scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy measurements provide local structural and interfacial information. We find that the unit cell is unaffected in-plane by vanadium doping changes, and remains unchanged over a thickness range of 4--10 quintuple layers (1 QL $\approx$ 1 nm). The in-plane lattice parameter ($a$) also remains the same in films grown on different substrate materials. However, out-of-plane the $c$-axis is reduced in films grown on less closely lattice-matched substrates, and increases with the doping level.
△ Less
Submitted 6 June, 2017;
originally announced June 2017.
-
Magnetization-control and transfer of spin-polarized Cooper pairs into a half-metal manganite
Authors:
Anand Srivastava,
Linde A. B. Olde Olthof,
Angelo Di Bernardo,
Sachio Komori,
Mario Amado,
Carla Palomares-Garcia,
Mohammad Alidoust,
Klaus Halterman,
Mark G. Blamire,
Jason W. A. Robinson
Abstract:
The pairing state and critical temperature (T$_c$) of a thin s-wave superconductor (S) on two or more ferromagnets (F) are controllable through the magnetization-alignment of the F layers. Magnetization misalignment can lead to spin-polarized triplet pair creation, and since such triplets are compatible with spin-polarized materials they are able to pass deeply into the F layers and so, cause a de…
▽ More
The pairing state and critical temperature (T$_c$) of a thin s-wave superconductor (S) on two or more ferromagnets (F) are controllable through the magnetization-alignment of the F layers. Magnetization misalignment can lead to spin-polarized triplet pair creation, and since such triplets are compatible with spin-polarized materials they are able to pass deeply into the F layers and so, cause a decrease in T$_c$. Various experiments on S/F$_1$/F$_2$ "triplet spin-valves" have been performed with the most pronounced suppression of T$_c$ reported in devices containing the half-metal ferromagnet (HMF) CrO$_2$ (F$_2$) albeit using out-of-plane magnetic fields to tune magnetic non-collinearity [Singh et al., Phys. Rev. X 5, 021019 (2015)]. Routine transfer of spin-polarized triplets to HMFs is a major goal for superconducting spintronics so as to maximize triplet-state spin-polarization. However, CrO$_2$ is chemically unstable and out-of-plane fields are undesirable for superconductivity. Here, we demonstrate magnetization-tuneable pair conversion and transfer of spin-polarized triplet pairs to the chemically stable mixed valence manganite La$_{2/3}$Ca$_{1/3}$MnO$_3$ in a pseudo spin-valve device using in-plane magnetic fields. The results match microscopic theory and offer full control over the pairing state.
△ Less
Submitted 11 September, 2017; v1 submitted 1 June, 2017;
originally announced June 2017.
-
p-wave triggered superconductivity in single layer graphene on an electron-doped oxide superconductor
Authors:
Angelo Di Bernardo,
Oded Millo,
Matteo Barbone,
Hen Alpern,
Yoav Kalcheim,
Ugo Sassi,
Anna Ott,
Domenico De Fazio,
Duhee Yoon,
Mario Amado,
Andrea C. Ferrari,
Jacob Linder,
Jason W. A. Robinson
Abstract:
Electron pairing in the vast majority of superconductors follows the Bardeen-Cooper-Schrieffer theory of superconductivity, which describes the condensation of electrons into pairs with antiparallel spins in a singlet state with an s-wave symmetry. Unconventional superconductivity is predicted in single layer graphene where the electrons pair with a p-wave or chiral d-wave symmetry, depending on t…
▽ More
Electron pairing in the vast majority of superconductors follows the Bardeen-Cooper-Schrieffer theory of superconductivity, which describes the condensation of electrons into pairs with antiparallel spins in a singlet state with an s-wave symmetry. Unconventional superconductivity is predicted in single layer graphene where the electrons pair with a p-wave or chiral d-wave symmetry, depending on the position of the Fermi energy with respect to the Dirac point. By placing single layer graphene on an electron-doped (non-chiral) d-wave superconductor and performing local scanning tunnelling microscopy and spectroscopy, here we show evidence for a p-wave triggered superconducting density of states in single layer graphene. The realization of unconventional superconductivity in single layer graphene offers an exciting new route for the development of p-wave superconductivity using two-dimensional materials with transition temperatures above 4.2 K.
△ Less
Submitted 6 February, 2017;
originally announced February 2017.
-
Intrinsic Paramagnetic Meissner Effect due to s-wave Odd-Frequency Superconductivity
Authors:
Angelo Di Bernardo,
Zaher Salman,
Xiaolei Wang,
Mario Amado,
Mehmet Egilmez,
Machiel Flokstra,
Andreas Suter,
Steve Lee,
Jianhua Zhao,
Thomas Prokscha,
Elvezio Morenzoni,
Mark Blamire,
Jacob Linder,
Jason W. A. Robinson
Abstract:
In 1933, Meissner and Ochsenfeld reported the expulsion of magnetic flux, the diamagnetic Meissner effect, from the interior of superconducting lead. This discovery was crucial in formulating the Bardeen-Cooper-Schrieffer (BCS) theory of superconductivity. In exotic superconducting systems BCS theory does not strictly apply. A classical example is a superconductor-magnet hybrid system where magnet…
▽ More
In 1933, Meissner and Ochsenfeld reported the expulsion of magnetic flux, the diamagnetic Meissner effect, from the interior of superconducting lead. This discovery was crucial in formulating the Bardeen-Cooper-Schrieffer (BCS) theory of superconductivity. In exotic superconducting systems BCS theory does not strictly apply. A classical example is a superconductor-magnet hybrid system where magnetic ordering breaks time-reversal symmetry of the superconducting condensate and results in the stabilisation of an odd-frequency superconducting state. It has been predicted that under appropriate conditions, odd-frequency superconductivity should manifest in the Meissner state as fluctuations in the sign of the magnetic susceptibility meaning that the superconductivity can either repel (diamagnetic) or attract (paramagnetic) external magnetic flux. Here we report local probe measurements of faint magnetic fields in a Au/Ho/Nb trilayer system using low energy muons, where antiferromagnetic Ho (4.5 nm) breaks time-reversal symmetry of the proximity induced pair correlations in Au. From depth-resolved measurements below the superconducting transition of Nb we observe a local enhancement of the magnetic field in Au that exceeds the externally applied field, thus proving the existence of an intrinsic paramagnetic Meissner effect arising from an odd-frequency superconducting state.
△ Less
Submitted 7 May, 2016;
originally announced May 2016.
-
Magnetically-driven colossal supercurrent enhancement in InAs nanowire Josephson junctions
Authors:
J. Paajaste,
E. Strambini,
M. Amado,
S. Roddaro,
P. San-Jose,
R. Aguado,
F. S. Bergeret,
D. Ercolani,
L. Sorba,
F. Giazotto
Abstract:
The Josephson effect is a fundamental quantum phenomenon consisting in the appearance of a dissipationless supercurrent in a weak link between two superconducting (S) electrodes. While the mechanism leading to the Josephson effect is quite general, i.e., Andreev reflections at the interface between the S electrodes and the weak link, the precise physical details and topology of the junction drasti…
▽ More
The Josephson effect is a fundamental quantum phenomenon consisting in the appearance of a dissipationless supercurrent in a weak link between two superconducting (S) electrodes. While the mechanism leading to the Josephson effect is quite general, i.e., Andreev reflections at the interface between the S electrodes and the weak link, the precise physical details and topology of the junction drastically modify the properties of the supercurrent. Specifically, a strong enhancement of the critical supercurrent $I_C$ is expected to occur when the topology of the junction allows the emergence of Majorana bound states. Here we report charge transport measurements in mesoscopic Josephson junctions formed by InAs nanowires and Ti/Al superconducting leads. Our main observation is a colossal enhancement of the critical supercurrent induced by an external magnetic field applied perpendicular to the substrate. This striking and anomalous supercurrent enhancement cannot be ascribed to any known conventional phenomenon existing in Josephson junctions including, for instance, Fraunhofer-like diffraction or a $π$-state behavior. We also investigate an unconventional model related to inhomogenous Zeeman field caused by magnetic focusing, and note that it can not account for the observed behaviour. Finally, we consider these results in the context of topological superconductivity, and show that the observed $I_C$ enhancement is compatible with a magnetic field-induced topological transition of the junction.
△ Less
Submitted 12 January, 2016;
originally announced January 2016.
-
Pb/InAs nanowire Josephson junction with high critical current and magnetic flux focusing
Authors:
J. Paajaste,
M. Amado,
S. Roddaro,
F. S. Bergeret,
D. Ercolani,
L. Sorba,
F. Giazotto
Abstract:
We have studied mesoscopic Josephson junctions formed by highly $n$-doped InAs nanowires and superconducting Ti/Pb source and drain leads. The current-voltage properties of the system are investigated by varying temperature and external out-of-plane magnetic field. Superconductivity in the Pb electrodes persists up to $ \sim 7$ K and with magnetic field values up to 0.4 T. Josephson coupling at ze…
▽ More
We have studied mesoscopic Josephson junctions formed by highly $n$-doped InAs nanowires and superconducting Ti/Pb source and drain leads. The current-voltage properties of the system are investigated by varying temperature and external out-of-plane magnetic field. Superconductivity in the Pb electrodes persists up to $ \sim 7$ K and with magnetic field values up to 0.4 T. Josephson coupling at zero backgate voltage is observed up to 4.5 K and the critical current is measured to be as high as 615 nA. The supercurrent suppression as a function of the magnetic field reveals a diffraction pattern that is explained by a strong magnetic flux focusing provided by the superconducting electrodes forming the junction.
△ Less
Submitted 25 March, 2015; v1 submitted 4 November, 2014;
originally announced November 2014.
-
A ballistic two-dimensional-electron-gas Andreev interferometer
Authors:
M. Amado,
A. Fornieri,
G. Biasiol,
L. Sorba,
F. Giazotto
Abstract:
We report the realization and investigation of a ballistic Andreev interferometer based on an InAs two dimensional electron gas coupled to a superconducting Nb loop. We observe strong magnetic modulations in the voltage drop across the device due to quasiparticle interference within the weak-link. The interferometer exhibits flux noise down to $\sim 80\, μΦ_0/\sqrt{\textrm{Hz}}$, and a robust beha…
▽ More
We report the realization and investigation of a ballistic Andreev interferometer based on an InAs two dimensional electron gas coupled to a superconducting Nb loop. We observe strong magnetic modulations in the voltage drop across the device due to quasiparticle interference within the weak-link. The interferometer exhibits flux noise down to $\sim 80\, μΦ_0/\sqrt{\textrm{Hz}}$, and a robust behavior in temperature with voltage oscillations surviving up to $\sim7\,$K. Besides this remarkable performance, the device represents a crucial first step for the realization of a fully-tunable ballistic superconducting magnetometer and embodies a potential new platform for the investigation of Majorana bound states as well as non-local entanglement of Cooper pairs.
△ Less
Submitted 10 June, 2014; v1 submitted 26 May, 2014;
originally announced May 2014.
-
Electrostatic tailoring of magnetic interference in quantum point contact ballistic Josephson junctions
Authors:
M. Amado,
A. Fornieri,
F. Carillo,
G. Biasiol,
L. Sorba,
V. Pellegrini,
F. Giazotto
Abstract:
The magneto-electrostatic tailoring of the supercurrent in quantum point contact ballistic Josephson junctions is demonstrated. An etched InAs-based heterostructure is laterally contacted to superconducting niobium leads and the existence of two etched side gates permits, in combination with the application of a perpendicular magnetic field, to modify continuously the magnetic interference pattern…
▽ More
The magneto-electrostatic tailoring of the supercurrent in quantum point contact ballistic Josephson junctions is demonstrated. An etched InAs-based heterostructure is laterally contacted to superconducting niobium leads and the existence of two etched side gates permits, in combination with the application of a perpendicular magnetic field, to modify continuously the magnetic interference pattern by depleting the weak link. For wider junctions the supercurrent presents a Fraunhofer-like interference pattern with periodicity h/2e whereas by shrinking electrostatically the weak link, the periodicity evolves continuously to a monotonic decay. These devices represent novel tunable structures that might lead to the study of the elusive Majorana fermions.
△ Less
Submitted 4 February, 2013;
originally announced February 2013.
-
A ballistic quantum ring Josephson interferometer
Authors:
A. Fornieri,
M. Amado,
F. Carillo,
F. Dolcini,
G. Biasiol,
L. Sorba,
V. Pellegrini,
F. Giazotto
Abstract:
We report the realization of a ballistic Josephson interferometer. The interferometer is made by a quantum ring etched in a nanofabricated two-dimensional electron gas confined in an InAs-based heterostructure laterally contacted to superconducting niobium leads. The Josephson current flowing through the structure shows oscillations with h/e flux periodicity when threading the loop with a perpendi…
▽ More
We report the realization of a ballistic Josephson interferometer. The interferometer is made by a quantum ring etched in a nanofabricated two-dimensional electron gas confined in an InAs-based heterostructure laterally contacted to superconducting niobium leads. The Josephson current flowing through the structure shows oscillations with h/e flux periodicity when threading the loop with a perpendicular magnetic field. This periodicity, in sharp contrast with the h/2e one observed in conventional dc superconducting quantum interference devices, confirms the ballistic nature of the device in agreement with theoretical predictions. This system paves the way for the implementation of interferometric Josephson pi-junctions, and for the investigation of Majorana fermions.
△ Less
Submitted 7 November, 2012;
originally announced November 2012.
-
Magneto-transport of graphene and quantum phase transitions in the quantum Hall regime
Authors:
Mario Amado,
Enrique Diez,
Francesco Rossella,
Vittorio Bellani,
David Lopez-Romero,
Duncan K Maude
Abstract:
We studied the magneto-transport in SiO2 substrate-supported monolayer graphene and the quantum phase transitions that characterize the quantum Hall regime, using magnetic fields up to 28T and temperatures down to 4K. The analysis of the temperature dependence of the Hall and longitudinal resistivity reveals new non-universalities of the critical exponents of the plateau-insulator transition. Thes…
▽ More
We studied the magneto-transport in SiO2 substrate-supported monolayer graphene and the quantum phase transitions that characterize the quantum Hall regime, using magnetic fields up to 28T and temperatures down to 4K. The analysis of the temperature dependence of the Hall and longitudinal resistivity reveals new non-universalities of the critical exponents of the plateau-insulator transition. These exponent depends on the type of disorder that governs the electrical transport, which knowledge is important for the design and fabrication of new graphene nano-devices.
△ Less
Submitted 17 April, 2012;
originally announced April 2012.
-
Circularly Polarized Resonant Rayleigh Scattering and Skyrmions in the $ν$ = 1 Quantum Hall Ferromagnet
Authors:
V. Bellani,
F. Rossella,
M. Amado,
E. Diez,
K. Kowalik,
G. Biasiol,
L. Sorba
Abstract:
We use the circularly polarized resonant Rayleigh scattering (RRS) to study the quantum Hall ferromagnet at $ν$ = 1. At this filling factor we observe a right handed copolarized RRS which probes the Skyrmion spin texture of the electrons in the photoexcited grounds state. The resonant scattering is not present in the left handed copolarization, and this can be related to the correlation between Sk…
▽ More
We use the circularly polarized resonant Rayleigh scattering (RRS) to study the quantum Hall ferromagnet at $ν$ = 1. At this filling factor we observe a right handed copolarized RRS which probes the Skyrmion spin texture of the electrons in the photoexcited grounds state. The resonant scattering is not present in the left handed copolarization, and this can be related to the correlation between Skymionic effects, screening and spin wave excitations. These results evidence that RRS is a valid method for the study of the spin texture of the quantum Hall states.
△ Less
Submitted 11 April, 2011; v1 submitted 10 February, 2011;
originally announced February 2011.
-
Magneto-Raman scattering of graphene on graphite: Electronic and phonon excitations
Authors:
C. Faugeras,
M. Amado,
P. Kossacki,
M. Orlita,
M. Kühne,
A. A. L. Nicolet,
Yu. I. Latyshev,
M. Potemski
Abstract:
Magneto-Raman scattering experiments from the surface of graphite reveal novel features associated to purely electronic excitations which are observed in addition to phonon-mediated resonances. Graphene-like and graphite domains are identified through experiments with $\sim 1μm$ spatial resolution performed in magnetic fields up to 32T. Polarization resolved measurements emphasize the characterist…
▽ More
Magneto-Raman scattering experiments from the surface of graphite reveal novel features associated to purely electronic excitations which are observed in addition to phonon-mediated resonances. Graphene-like and graphite domains are identified through experiments with $\sim 1μm$ spatial resolution performed in magnetic fields up to 32T. Polarization resolved measurements emphasize the characteristic selection rules for electronic transitions in graphene. Graphene on graphite displays the unexpected hybridization between optical phonon and symmetric across the Dirac point inter Landau level transitions. The results open new experimental possibilities - to use light scattering methods in studies of graphene under quantum Hall effect conditions.
△ Less
Submitted 11 July, 2011; v1 submitted 10 January, 2011;
originally announced January 2011.
-
Optical probing of correlation driven liquid-to-insulator transition in 2D electron gas
Authors:
F. Dionigi,
F. Rossella,
V. Bellani,
M. Amado,
E. Diez,
K. Kowalik,
G. Biasiol,
L. Sorba
Abstract:
We study the quantum Hall liquid and the metal-insulator transition in a high mobility two dimensional electron gas, by means of photoluminescence and magneto-transport. In the integer and fractional regime at nu > 1/3, analyzing the emission energy dispersion we probe the magneto-Coulomb screening and the hidden symmetry of the electron liquid. In the fractional regime above above nu =1/3 the sys…
▽ More
We study the quantum Hall liquid and the metal-insulator transition in a high mobility two dimensional electron gas, by means of photoluminescence and magneto-transport. In the integer and fractional regime at nu > 1/3, analyzing the emission energy dispersion we probe the magneto-Coulomb screening and the hidden symmetry of the electron liquid. In the fractional regime above above nu =1/3 the system undergoes the metal-to-insulator transition, and in the insulating phase the dispersion becomes linear with evidence of an increased renormalized mass.
△ Less
Submitted 19 April, 2011; v1 submitted 17 July, 2010;
originally announced July 2010.
-
Effect of a magnetic field on the two-phonon Raman scattering in graphene
Authors:
C. Faugeras,
P. Kossacki,
D. M. Basko,
M. Amado,
M. Sprinkle,
C. Berger,
W. A. de Heer,
M. Potemski
Abstract:
We have studied, both experimentally and theoretically, the change of the so-called 2D band of the Raman scattering spectrum of graphene (the two-phonon peak near 2700 cm-1) in an external magnetic field applied perpendicular to the graphene crystal plane at liquid helium temperature. A shift to lower frequency and broadening of this band is observed as the magnetic field is increased from 0 to 33…
▽ More
We have studied, both experimentally and theoretically, the change of the so-called 2D band of the Raman scattering spectrum of graphene (the two-phonon peak near 2700 cm-1) in an external magnetic field applied perpendicular to the graphene crystal plane at liquid helium temperature. A shift to lower frequency and broadening of this band is observed as the magnetic field is increased from 0 to 33 T. At fields up to 5--10 T the changes are quadratic in the field while they become linear at higher magnetic fields. This effect is explained by the curving of the quasiclassical trajectories of the photo-excited electrons and holes in the magnetic field, which enables us (i) to extract the electron inelastic scattering rate, and (ii) to conclude that electronic scattering accounts for about half of the measured width of the 2D peak.
△ Less
Submitted 21 May, 2010; v1 submitted 11 January, 2010;
originally announced January 2010.
-
Numerical study of the localization length critical index in a network model of plateau-plateau transitions in the quantum Hall effect
Authors:
M. Amado,
A. V. Malyshev,
A. Sedrakyan,
F. Dominguez-Adame
Abstract:
We calculate numerically the localization length critical index within the Chalker-Coddington (CC) model for plateau-plateau transitions in the quantum Hall effect. Lyapunov exponents have been calculated with relative errors on the order $10^{-3}$. Such high precision was obtained by considering the distribution of Lyapunov exponents for large ensembles of relatively short chains and calculatin…
▽ More
We calculate numerically the localization length critical index within the Chalker-Coddington (CC) model for plateau-plateau transitions in the quantum Hall effect. Lyapunov exponents have been calculated with relative errors on the order $10^{-3}$. Such high precision was obtained by considering the distribution of Lyapunov exponents for large ensembles of relatively short chains and calculating the ensemble average values. We analyze thoroughly finite size effects and find the localization length critical index $ν= 2.517\pm 0.018$.
△ Less
Submitted 22 December, 2009;
originally announced December 2009.
-
Tuning the electron-phonon coupling in multilayer graphene with magnetic fields
Authors:
C. Faugeras,
M. Amado,
P. Kossacki,
M. Orlita,
M. Sprinkle,
C. Berger,
W. A. de Heer,
M. Potemski
Abstract:
Magneto Raman scattering study of the E$_{2g}$ optical phonons in multi-layer epitaxial graphene grown on a carbon face of SiC are presented. At 4.2K in magnetic field up to 33 T, we observe a series of well pronounced avoided crossings each time the optically active inter Landau level transition is tuned in resonance with the E$_{2g}$ phonon excitation (at 196 meV). The width of the phonon Rama…
▽ More
Magneto Raman scattering study of the E$_{2g}$ optical phonons in multi-layer epitaxial graphene grown on a carbon face of SiC are presented. At 4.2K in magnetic field up to 33 T, we observe a series of well pronounced avoided crossings each time the optically active inter Landau level transition is tuned in resonance with the E$_{2g}$ phonon excitation (at 196 meV). The width of the phonon Raman scattering response also shows pronounced variations and is enhanced in conditions of resonance. The experimental results are well reproduced by a model that gives directly the strength of the electron-phonon interaction.
△ Less
Submitted 31 July, 2009;
originally announced July 2009.
-
Plateau insulator transition in graphene
Authors:
M. Amado,
E. Diez,
D. López-Romero,
F. Rossella,
J. M. Caridad,
F. Dionigi,
V. Bellani,
D. K. Maude
Abstract:
The quantum Hall effect in a single-layer graphene sample is studied in strong magnetic fields up to 28 T. Our measurements reveal the existence of a metal- insulator transition from filling factor $ν=-2$ to $ν=0$. The value of the universal scaling exponent is found to be $κ=0.57 $ in graphene and therefore in a truly two-dimensional system. This value of $κ$ is in agreement with the accepted u…
▽ More
The quantum Hall effect in a single-layer graphene sample is studied in strong magnetic fields up to 28 T. Our measurements reveal the existence of a metal- insulator transition from filling factor $ν=-2$ to $ν=0$. The value of the universal scaling exponent is found to be $κ=0.57 $ in graphene and therefore in a truly two-dimensional system. This value of $κ$ is in agreement with the accepted universal value for the plateau-insulator transitions in standard quasi two-dimensional electron and hole gases.
△ Less
Submitted 30 March, 2010; v1 submitted 9 July, 2009;
originally announced July 2009.
-
Fano-Rashba effect in quantum dots
Authors:
P. A. Orellana,
M. Amado,
F. Dominguez-Adame
Abstract:
We consider the electronic transport through a Rashba quantum dot coupled to ferromagnetic leads. We show that the interference of localized electron states with resonant electron states leads to the appearance of the Fano-Rashba effect. This effect occurs due to the interference of bound levels of spin-polarized electrons with the continuum of electronic states with an opposite spin polarizatio…
▽ More
We consider the electronic transport through a Rashba quantum dot coupled to ferromagnetic leads. We show that the interference of localized electron states with resonant electron states leads to the appearance of the Fano-Rashba effect. This effect occurs due to the interference of bound levels of spin-polarized electrons with the continuum of electronic states with an opposite spin polarization. We investigate this Fano-Rashba effect as a function of the applied magnetic field and Rashba spin-orbit coupling.
△ Less
Submitted 5 March, 2008;
originally announced March 2008.
-
Resonant Rayleigh Scattering in Ordered and Intentionally Disordered Semiconductor Superlattices
Authors:
V. Bellani,
M. Amado,
E. Diez,
C. Koerdt,
M. Potemski,
R. Hey
Abstract:
We report the experimental study of resonant Rayleigh scattering in GaAs-AlGaAs superlattices with ordered and intentionally disordered potential profiles (correlated and uncorrelated) in the growth direction z. We show that the intentional disorder along z modify markedly the energy dispersion of the dephasing rates of the excitons. The application of an external magnetic field in the same dire…
▽ More
We report the experimental study of resonant Rayleigh scattering in GaAs-AlGaAs superlattices with ordered and intentionally disordered potential profiles (correlated and uncorrelated) in the growth direction z. We show that the intentional disorder along z modify markedly the energy dispersion of the dephasing rates of the excitons. The application of an external magnetic field in the same direction allows the continuous tuning of the in plane exciton localization and to study the interplay between the in plane and vertical disorder.
△ Less
Submitted 25 January, 2007;
originally announced January 2007.
-
Short-range effects and magnetization reversal in Co$_{80}$Fe$_{20}$ thin films: a MOKE magnetometry/domain imaging and AMR study
Authors:
J. M. Teixeira,
R. F. A. Silva,
J. Ventura,
A. Pereira,
J. P. Araujo,
M. Amado,
F. Carpinteiro,
J. B. Sousa,
S. Cardoso,
R. Ferreira,
P. Freitas
Abstract:
A MOKE magnetometry unit simultaneously sensitive to both in-plane magnetization components, based on an intensity differential detection method, allows us to observe the uniaxial anisotropy impressed during CoFe-deposition and to discriminate the magnetization processes under a magnetic field parallel and perpendicular to such axes. Our MOKE imaging unit, using a CCD camera for Kerr effect doma…
▽ More
A MOKE magnetometry unit simultaneously sensitive to both in-plane magnetization components, based on an intensity differential detection method, allows us to observe the uniaxial anisotropy impressed during CoFe-deposition and to discriminate the magnetization processes under a magnetic field parallel and perpendicular to such axes. Our MOKE imaging unit, using a CCD camera for Kerr effect domain visualization provides direct evidence on the dominant M-processes, namely domain wall motion and moment rotation. Further magnetic information was obtained by AMR measurements due to the dependence of the electrical resistivity on the short-range spin disorder and also on the angle between the electrical current direction (I) and the spontaneous magnetization ($\emph{\textbf{M}}_{S}$).
△ Less
Submitted 29 July, 2006; v1 submitted 19 July, 2005;
originally announced July 2005.
